Publications

The rotating bending fatigue (RBF) behavior (fully reversed, R = −1) of additively manufactured (AM) Ti–6Al–4V alloy produced via laser powder bed fusion (PBF-L) was investigated with respect to different microstructures achieved through novel heat treatments. The investigation herein seeks to elucidate the effect of microstructure by controlling variables that can affect fatigue behavior in Ti–6Al–4V, such as chemistry, porosity, and surface roughness. In order to control these variables, different hot isostatic pressing (HIP) treatments at 800 °C, 920 °C, and 1050 °C with a 920 °C temper were applied to three sets of Ti–6Al–4V cylinders that originated from the same PBF-L build, such that there were 30 tests per condition. After HIP treatment, the specimens were machined and tested. The highest runout stress was achieved after sub-β transus HIP at 800 °C for 2 h at 200 MPa of pressure. A significant drop in fatigue strength was attributed to large prior-β grains and grain boundary α resulting from super-β transus HIP treated specimens. For the sub-β transus HIP specimens, differences in fatigue strength were attributed to α lath thickness, relative dislocation density, and dislocation boundary strengthening.

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Bonding diamond to the back side of gallium nitride (GaN) electronics has been shown to improve thermal management in lateral devices; however, engineering challenges remain with the bonding process and characterizing the bond quality for vertical device architectures. Here, integration of these two materials is achieved by room-temperature compression bonding centimeter-scale GaN and a diamond die via an intermetallic bonding layer of Ti/Au. Recent attempts at GaN/diamond bonding have utilized a modified surface activation bonding (SAB) method, which requires Ar fast atom bombardment immediately followed by bonding within the same tool under ultrahigh vacuum (UHV) conditions. The method presented here does not require a dedicated SAB tool yet still achieves bonding via a room-temperature metal-metal compression process. Imaging of the buried interface and the total bonding area is achieved via transmission electron microscopy (TEM) and confocal acoustic scanning microscopy (C-SAM), respectively. The thermal transport quality of the bond is extracted from spatially resolved frequency-domain thermoreflectance (FDTR) with the bonded areas boasting a thermal boundary conductance of >100 MW/m2·K. Additionally, Raman maps of GaN near the GaN-diamond interface reveal a low level of compressive stress, <80 MPa, in well-bonded regions. FDTR and Raman were coutilized to map these buried interfaces and revealed some poor thermally bonded areas bordered by high-stress regions, highlighting the importance of spatial sampling for a complete picture of bond quality. Overall, this work demonstrates a novel method for thermal management in vertical GaN devices that maintains low intrinsic stresses while boasting high thermal boundary conductances.

In this project, we experimented the focused ion beam (FIB) based fabrications of semiconductor quantum dots (QDs) by using metal nano particles (NPs) (e.g., Al) on semiconductor as a template and by means of the FIB induced direct metal-to-QD conversion. We have examined effect of the experimental conditions, including Ga⁺ ion energy and dose as well as substrate temperature. The results of experiments have shown AlGaSb QD formation on GaSb substrate can be achieved under certain conditions but there are many challenges about the techniques, including compositional nonuniformity of the QDs formed, partial conversion of the metal NP to QD, and high defect concentration in the QDs.

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VO2 has shown great promise for sensors, smart windows, and energy storage devices, because of its drastic semiconductor-to-metal transition (SMT) near 340 K coupled with a structural transition. To push its application toward room-temperature, effective transition temperature (Tc) tuning in VO2 is desired. In this study, tailorable SMT characteristics in VO2 films have been achieved by the electrochemical intercalation of foreign ions (e.g., Li ions). By controlling the relative potential with respect to Li/Li+ during the intercalation process, Tc of VO2 can be effectively and systematically tuned in the window from 326.7 to 340.8 K. The effective Tc tuning could be attributed to the observed strain and lattice distortion and the change of the charge carrier density in VO2 introduced by the intercalation process. This demonstration opens up a new approach in tuning the VO2 phase transition toward room-temperature device applications and enables future real-time phase change property tuning.

Transition metal nitrides (e.g., TiN) have shown tremendous promise in optical metamaterials for nanophotonic devices due to their plasmonic properties comparable to noble metals and superior high temperature stability. Vertically aligned nanocomposites (VANs) offer a great platform for combining two dissimilar functional materials with a one-step deposition technique toward multifunctionality integration and strong structural/property anisotropy. Here, we report a two-phase nanocomposite design combining ferromagnetic CoFe₂ nanosheets in the plasmonic TiN matrix as a new hybrid plasmonic metamaterial. The hybrid metamaterials exhibit anisotropic optical and magnetic responses, as well as a pronounced magneto-optical coupling response evidenced by Magneto-optic Kerr Effect measurement, owing to the novel vertically aligned structure. This work demonstrates a new TiN-based metamaterial with anisotropic properties and multifunctionality toward light polarization modulation, optical switching, and integrated optics.

Calcite (CaCO₃) composition and properties are defined by the chemical environment in which CaCO₃ forms. However, a complete understanding of the relationship between aqueous chemistry during calcite precipitation and resulting chemical and physical CaCO₃ properties remains elusive; therefore, we present an investigation into the coupled effects of divalent cations Sr²⁺ and Mg²⁺ on CaCO₃ precipitation and subsequent crystal growth. Through chemical analysis of the aqueous phases and microscopy of the resulting calcite phases in compliment with density functional theory calculations, we elucidate the relationship between crystal growth and the resulting composition (elemental and isotopic) of calcite. The results of this experimental and modeling work suggest that Mg²⁺ and Sr²⁺ have cation-specific impacts that inhibit calcite crystal growth, including: (1) Sr²⁺ incorporates more readily into calcite than Mg²⁺ (D_Sr > D_Mg), and increasing [Sr²⁺]_t or [Mg²⁺]_t increases D_Sr; (2) the inclusion of Mg²⁺ into structure leads to a reduction in the calcite unit cell volume, whereas Sr²⁺ leads to an expansion; (3) the inclusion of both Mg²⁺ and Sr²⁺ results in a distribution of unit cell impacts based on the relative positions of the Sr²⁺ and Mg²⁺ in the lattice. These experiments were conducted at saturation indices of CaCO₃ of ~4.1, favoring rapid precipitation. This rapid precipitation resulted in observed Sr isotope fractionation confirming Sr isotopic fractionation is dependent upon the precipitation rate. We further note that the precipitation and growth of calcite favors the incorporation of the lighter ⁸⁶Sr isotope over the heavier ⁸⁷Sr isotope, regardless of the initial solution conditions, and the degree of fractionation increases with D_Sr. In sum, these results demonstrate the impact of solution environment to influence the incorporation behavior and crystal growth behavior of calcite. These factors are important to understand in order to effectively use geochemical signatures resulting from calcite precipitation or dissolution to gain specific information.

Two-dimensional (2D) layered oxides have recently attracted wide attention owing to the strong coupling among charges, spins, lattice, and strain, which allows great flexibility and opportunities in structure designs as well as multifunctionality exploration. In parallel, plasmonic hybrid nanostructures exhibit exotic localized surface plasmon resonance (LSPR) providing a broad range of applications in nanophotonic devices and sensors. A hybrid material platform combining the unique multifunctional 2D layered oxides and plasmonic nanostructures brings optical tuning into the new level. In this work, a novel self-assembled Bi2MoO6 (BMO) 2D layered oxide incorporated with plasmonic Au nanoinclusions has been demonstrated via one-step pulsed laser deposition (PLD) technique. Comprehensive microstructural characterizations, including scanning transmission electron microscopy (STEM), differential phase contrast imaging (DPC), and STEM tomography, have demonstrated the high epitaxial quality and particle-in-matrix morphology of the BMO-Au nanocomposite film. DPC-STEM imaging clarifies the magnetic domain structures of BMO matrix. Three different BMO structures including layered supercell (LSC) and superlattices have been revealed which is attributed to the variable strain states throughout the BMO-Au film. Owing to the combination of plasmonic Au and layered structure of BMO, the nanocomposite film exhibits a typical LSPR in visible wavelength region and strong anisotropy in terms of its optical and ferromagnetic properties. This study opens a new avenue for developing novel 2D layered complex oxides incorporated with plasmonic metal or semiconductor phases showing great potential for applications in multifunctional nanoelectronics devices. [Figure not available: see fulltext.]

The recent discovery of bright, room-temperature, single photon emitters in GaN leads to an appealing alternative to diamond best single photon emitters given the widespread use and technological maturity of III-nitrides for optoelectronics (e.g. blue LEDs, lasers) and high-speed, high-power electronics. This discovery opens the door to on-chip and on-demand single photon sources integrated with detectors and electronics. Currently, little is known about the underlying defect structure nor is there a sense of how such an emitter might be controllably created. A detailed understanding of the origin of the SPEs in GaN and a path to deterministically introduce them is required. In this project, we develop new experimental capabilities to then investigate single photon emission from GaN nanowires and both GAN and AlN wafers. We ion implant our wafers with the ion implanted with our focused ion beam nanoimplantation capabilities at Sandia, to go beyond typical broad beam implantation and create single photon emitting defects with nanometer precision. We've created light emitting sources using Li⁺ and He⁺, but single photon emission has yet to be demonstrated. In parallel, we calculate the energy levels of defects and transition metal substitutions in GaN to gain a better understanding of the sources of single photon emission in GaN and AlN. The combined experimental and theoretical capabilities developed throughout this project will enable further investigation into the origins of single photon emission from defects in GaN, AlN, and other wide bandgap semiconductors.

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Hole spins in Ge quantum wells have shown success in both spintronic and quantum applications, thereby increasing the demand for high-quality material. We performed material analysis and device characterization of commercially grown shallow and undoped Ge/SiGe quantum well heterostructures on 8-in. (100) Si wafers. Material analysis reveals the high crystalline quality, sharp interfaces, and uniformity of the material. We demonstrate a high mobility (1.7 × 105cm2V-1s-1) 2D hole gas in a device with a conduction threshold density of 9.2 × 1010cm-2. We study the use of surface preparation as a tool to control barrier thickness, density, mobility, and interface trap density. We report interface trap densities of 6 × 1012eV-1. Our results validate the material's high quality and show that further investigation into improving device performance is needed. We conclude that surface preparations which include weak Ge etchants, such as dilute H2O2, can be used for postgrowth control of quantum well depth in Ge-rich SiGe while still providing a relatively smooth oxide-semiconductor interface. Our results show that interface state density is mostly independent of our surface preparations, thereby implying that a Si cap layer is not necessary for device performance. Transport in our devices is instead limited by the quantum well depth. Commercially sourced Ge/SiGe, such as studied here, will provide accessibility for future investigations.

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Ferroelectric HfO2-based materials hold great potential for the widespread integration of ferroelectricity into modern electronics due to their compatibility with existing Si technology. Earlier work indicated that a nanometre grain size was crucial for the stabilization of the ferroelectric phase. This constraint, associated with a high density of structural defects, obscures an insight into the intrinsic ferroelectricity of HfO2-based materials. Here we demonstrate that stable and enhanced polarization can be achieved in epitaxial HfO2 films with a high degree of structural order (crystallinity). An out-of-plane polarization value of 50 μC cm–2 has been observed at room temperature in Y-doped HfO2(111) epitaxial thin films, with an estimated full value of intrinsic polarization of 64 μC cm–2, which is in close agreement with density functional theory calculations. The crystal structure of films reveals the Pca21 orthorhombic phase with small rhombohedral distortion, underlining the role of the structural constraint in stabilizing the ferroelectric phase. Our results suggest that it could be possible to exploit the intrinsic ferroelectricity of HfO2-based materials, optimizing their performance in device applications.

The selective amorphization of SiGe in Si/SiGe nanostructures via a 1 MeV Si+ implant was investigated, resulting in single-crystal Si nanowires (NWs) and quantum dots (QDs) encapsulated in amorphous SiGe fins and pillars, respectively. The Si NWs and QDs are formed during high-temperature dry oxidation of single-crystal Si/SiGe heterostructure fins and pillars, during which Ge diffuses along the nanostructure sidewalls and encapsulates the Si layers. The fins and pillars were then subjected to a 3 × 1015 ions/cm2 1 MeV Si+ implant, resulting in the amorphization of SiGe, while leaving the encapsulated Si crystalline for larger, 65-nm wide NWs and QDs. Interestingly, the 26-nm diameter Si QDs amorphize, while the 28-nm wide NWs remain crystalline during the same high energy ion implant. This result suggests that the Si/SiGe pillars have a lower threshold for Si-induced amorphization compared to their Si/SiGe fin counterparts. However, Monte Carlo simulations of ion implantation into the Si/SiGe nanostructures reveal similar predicted levels of displacements per cm3. Molecular dynamics simulations suggest that the total stress magnitude in Si QDs encapsulated in crystalline SiGe is higher than the total stress magnitude in Si NWs, which may lead to greater crystalline instability in the QDs during ion implant. The potential lower amorphization threshold of QDs compared to NWs is of special importance to applications that require robust QD devices in a variety of radiation environments.

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Multiferroic materials are an interesting functional material family combining two ferroic orderings, e.g., ferroelectric and ferromagnetic orderings, or ferroelectric and antiferromagnetic orderings, and find various device applications, such as spintronics, multiferroic tunnel junctions, etc. Coupling multiferroic materials with plasmonic nanostructures offers great potential for optical-based switching in these devices. Here, we report a novel nanocomposite system consisting of layered Bi1.25AlMnO3.25 (BAMO) as a multiferroic matrix and well dispersed plasmonic Au nanoparticles (NPs) and demonstrate that the Au nanoparticle morphology and the nanocomposite properties can be effectively tuned. Specifically, the Au particle size can be tuned from 6.82 nm to 31.59 nm and the 6.82 nm one presents the optimum ferroelectric and ferromagnetic properties and plasmonic properties. Besides the room temperature multiferroic properties, the BAMO-Au nanocomposite system presents other unique functionalities including localized surface plasmon resonance (LSPR), hyperbolicity in the visible region, and magneto-optical coupling, which can all be effectively tailored through morphology tuning. This study demonstrates the feasibility of coupling single phase multiferroic oxides with plasmonic metals for complex nanocomposite designs towards optically switchable spintronics and other memory devices.

Metals subjected to irradiation environments undergo microstructural evolution and concomitant degradation, yet the nanoscale mechanisms for such evolution remain elusive. Here, we combine in situ heavy ion irradiation, atomic resolution microscopy, and atomistic simulation to elucidate how radiation damage and interfacial defects interplay to control grain boundary (GB) motion. While classical notions of boundary evolution under irradiation rest on simple ideas of curvature-driven motion, the reality is far more complex. Focusing on an ion-irradiated Pt Σ3 GB, we show how this boundary evolves by the motion of 120° facet junctions separating nanoscale {112} facets. Our analysis considers the short- and mid-range ion interactions, which roughen the facets and induce local motion, and longer-range interactions associated with interfacial disconnections, which accommodate the intergranular misorientation. We suggest how climb of these disconnections could drive coordinated facet junction motion. These findings emphasize that both local and longer-range, collective interactions are important to understanding irradiation-induced interfacial evolution.

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This work investigates the role of water and oxygen on the shear-induced structural modifications of molybdenum disulfide (MoS2) coatings for space applications and the impact on friction due to oxidation from aging. We observed from transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS) that sliding in both an inert environment (i.e., dry N2) or humid lab air forms basally oriented (002) running films of varying thickness and structure. Tribological testing of the basally oriented surfaces created in dry N2 and air showed lower initial friction than a coating with an amorphous or nanocrystalline microstructure. Aging of coatings with basally oriented surfaces was performed by heating samples at 250 °C for 24 h. Post aging tribological testing of the as-deposited coating showed increased initial friction and a longer transition from higher friction to lower friction (i.e., run-in) due to oxidation of the surface. Tribological testing of raster patches formed in dry N2 and air both showed an improved resistance to oxidation and reduced initial friction after aging. The results from this study have implications for the use of MoS2-coated mechanisms in aerospace and space applications and highlight the importance of preflight testing. Preflight cycling of components in inert or air environments provides an oriented surface microstructure with fewer interaction sites for oxidation and a lower shear strength, reducing the initial friction coefficient and oxidation due to aging or exposure to reactive species (i.e., atomic oxygen).

Structural disorder causes materials' surface electronic properties, e.g., work function (φ), to vary spatially, yet it is challenging to prove exact causal relationships to underlying ensemble disorder, e.g., roughness or granularity. For polycrystalline Pt, nanoscale resolution photoemission threshold mapping reveals a spatially varying φ = 5.70 ± 0.03 eV over a distribution of (111) vicinal grain surfaces prepared by sputter deposition and annealing. With regard to field emission and related phenomena, e.g., vacuum arc initiation, a salient feature of the φ distribution is that it is skewed with a long tail to values down to 5.4 eV, i.e., far below the mean, which is exponentially impactful to field emission via the Fowler-Nordheim relation. We show that the φ spatial variation and distribution can be explained by ensemble variations of granular tilts and surface slopes via a Smoluchowski smoothing model wherein local φ variations result from spatially varying densities of electric dipole moments, intrinsic to atomic steps, that locally modify φ. Atomic step-terrace structure is confirmed with scanning tunneling microscopy (STM) at several locations on our surfaces, and prior works showed STM evidence for atomic step dipoles at various metal surfaces. From our model, we find an atomic step edge dipole μ = 0.12 D/edge atom, which is comparable to values reported in studies that utilized other methods and materials. Our results elucidate a connection between macroscopic φ and the nanostructure that may contribute to the spread of reported φ for Pt and other surfaces and may be useful toward more complete descriptions of polycrystalline metals in the models of field emission and other related vacuum electronics phenomena, e.g., arc initiation.

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A combination of electrodeposition and thermal reduction methods have been utilized for the synthesis of ligand-free FeNiCo alloy nanoparticles through a high-entropy oxide intermediate. These phases are of great interest to the electrocatalysis community, especially when formed by a sustainable chemistry method. This is successfully achieved by first forming a complex five element amorphous FeNiCoCrMn high-entropy oxide (HEO) phase via electrodeposition from a nanodroplet emulsion solution of the metal salt reactants. The amorphous oxide phase is then thermally treated and reduced at 570-600 °C to form the crystalline FeNiCo alloy with a separate CrMnOx cophase. The FeNiCo alloy is fully characterized by scanning transmission electron microscopy and energy-dispersive X-ray spectroscopy elemental analysis and is identified as a face-centered cubic crystal with the lattice constant a = 3.52 Å. The unoptimized, ligand-free FeNiCo NPs activity toward the oxygen evolution reaction is evaluated in alkaline solution and found to have an ∼185 mV more cathodic onset potential than the Pt metal. Beyond being able to synthesize highly crystalline, ligand-free FeNiCo nanoparticles, the demonstrated and relatively simple two-step process is ideal for the synthesis of tailor-made nanoparticles where the desired composition is not easily achieved with classical solution-based chemistries.

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The controlled fabrication of vertical, tapered, and high-aspect ratio GaN nanowires via a two-step top-down process consisting of an inductively coupled plasma reactive ion etch followed by a hot, 85% H3PO4 crystallographic wet etch is explored. The vertical nanowires are oriented in the [0001] direction and are bound by sidewalls comprising of 3362 ¯ } semipolar planes which are at a 12° angle from the [0001] axis. High temperature H3PO4 etching between 60 °C and 95 °C result in smooth semipolar faceting with no visible micro-faceting, whereas a 50 °C etch reveals a micro-faceted etch evolution. High-angle annular dark-field scanning transmission electron microscopy imaging confirms nanowire tip dimensions down to 8–12 nanometers. The activation energy associated with the etch process is 0.90 ± 0.09 eV, which is consistent with a reaction-rate limited dissolution process. The exposure of the 3362 ¯ } type planes is consistent with etching barrier index calculations. The field emission properties of the nanowires were investigated via a nanoprobe in a scanning electron microscope as well as by a vacuum field emission electron microscope. The measurements show a gap size dependent turn-on voltage, with a maximum current of 33 nA and turn-on field of 1.92 V nm−1 for a 50 nm gap, and uniform emission across the array.

Combining plasmonic and magnetic properties, namely magneto-plasmonic coupling, inspires great research interest and the search for magneto-plasmonic nanostructure becomes considerably critical. Here we designed a nanopillar-in-matrix structure with core–shell alloyed nanopillars for both BaTiO3 (BTO)-Au0.5Co0.5 (AuCo) and BTO-Au0.25Cu0.25Co0.25Ni0.25 (AuCuCoNi) hybrid systems, i.e., ferromagnetic alloy cores (e.g., Co or CoNi) with plasmonic shells (e.g., Au or Au/Cu). These core–shell alloy nanopillars are uniformly embedded into a dielectric BTO matrix to form a vertically aligned nanocomposite (VAN) structure. Both hybrid systems present excellent epitaxial quality and interesting multi-functionality, e.g., high magnetic anisotropy, magneto-optical coupling response, tailorable plasmonic resonance wavelength, tunable hyperbolic properties and strong optical anisotropy. These alloyed nanopillars-in-matrix designs provide enormous potential for complex hybrid material designs with multi-functionality and demonstrate strong interface enabled magneto-plasmonic coupling along with plasmonic and magnetic performance.

Two-dimensional (2D) materials with robust ferromagnetic behavior have attracted great interest because of their potential applications in next-generation nanoelectronic devices. Aside from graphene and transition metal dichalcogenides, Bi-based layered oxide materials are a group of prospective candidates due to their superior room-temperature multiferroic response. Here, an ultrathin Bi3Fe2Mn2O10+δ layered supercell (BFMO322 LS) structure was deposited on an LaAlO3 (LAO) (001) substrate using pulsed laser deposition. Microstructural analysis suggests that a layered supercell (LS) structure consisting of two-layer-thick Bi-O slabs and two-layer-thick Mn/Fe-O octahedra slabs was formed on top of the pseudo-perovskite interlayer (IL). A robust saturation magnetization value of 129 and 96 emu cm-3 is achieved in a 12.3 nm thick film in the in-plane (IP) and out-of-plane (OP) directions, respectively. The ferromagnetism, dielectric permittivity, and optical bandgap of the ultrathin BFMO films can be effectively tuned by thickness and morphology variation. In addition, the anisotropy of all ultrathin BFMO films switches from OP dominating to IP dominating as the thickness increases. This study demonstrates the ultrathin BFMO film with tunable multifunctionalities as a promising candidate for novel integrated spintronic devices. This journal is

We demonstrate the ability to fabricate vertically stacked Si quantum dots (QDs) within SiGe nanowires with QD diameters down to 2 nm. These QDs are formed during high-temperature dry oxidation of Si/SiGe heterostructure pillars, during which Ge diffuses along the pillars' sidewalls and encapsulates the Si layers. Continued oxidation results in QDs with sizes dependent on oxidation time. The formation of a Ge-rich shell that encapsulates the Si QDs is observed, a configuration which is confirmed to be thermodynamically favorable with molecular dynamics and density functional theory. The type-II band alignment of the Si dot/SiGe pillar suggests that charge trapping on the Si QDs is possible, and electron energy loss spectra show that a conduction band offset of at least 200 meV is maintained for even the smallest Si QDs. Our approach is compatible with current Si-based manufacturing processes, offering a new avenue for realizing Si QD devices.

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The atomic precision advanced manufacturing (APAM) enabled vertical tunneling field effect transistor (TFET) presents a new opportunity in microelectronics thanks to the use of ultra-high doping and atomically abrupt doping profiles. We present modeling and assessment of the APAM TFET using TCAD Charon simulation. First, we show, through a combination of simulation and experiment, that we can achieve good control of the gated channel on top of a phosphorus layer made using APAM, an essential part of the APAM TFET. Then, we present simulation results of a preliminary APAM TFET that predict transistor-like current-voltage response despite low device performance caused by using large geometry dimensions. Future device simulations will be needed to optimize geometry and doping to guide device design for achieving superior device performance.

This project sought to develop a fundamental understanding of the mechanisms underlying a newly observed enhanced germanium (Ge) diffusion process in silicon germanium (SiGe) semiconductor nanostructures during thermal oxidation. Using a combination of oxidationdiffusion experiments, high resolution imaging, and theoretical modeling, a model for the enhanced Ge diffusion mechanism was proposed. Additionally, a nanofabrication approach utilizing this enhanced Ge diffusion mechanism was shown to be applicable to arbitrary 3D shapes, leading to the fabrication of stacked silicon quantum dots embedded in SiGe nanopillars. A new wet etch-based method for preparing 3D nanostructures for highresolution imaging free of obscuring material or damage was also developed. These results enable a new method for the controlled and scalable fabrication of on-chip silicon nanostructures with sub-10 nm dimensions needed for next generation microelectronics, including low energy electronics, quantum computing, sensors, and integrated photonics.

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The compound (Pb2MnSe3)0.6VSe2 was predicted to be kinetically stable based on density functional theory (DFT) calculations on an island of Pb2MnSe3 between layers of VSe2. This approach provides a high degree of freedom by not forcing interlayer lattice match, making it ideal to investigate the likelihood of formation of new incommensurate layer misfit structures. The free space around the island is critical, as it allows atoms to diffuse and hence exploring the local energy landscape around the initial configuration. (Pb2MnSe3)0.6VSe2 was synthesized via a near diffusionless reaction from precursors where a repeating sequence of elemental layers matches the local composition and layer sequence of the predicted compound. The VSe2 layer consists of a Se-V-Se trilayer with octahedral coordination of the V atoms. The Pb2MnSe3 layer consists of three rock-salt-like planes, with a MnSe layer between the planes of PbSe. The center MnSe plane stabilizes the puckering of the outer PbSe layers. Electrical properties indicate that (Pb2Mn1Se3)0.6VSe2 undergoes a charge density wave transition at ~100 K and orders ferromagnetically at 35 K. The combination of theory and experiment enables a faster convergence to new heterostructures than either approach in isolation.

A review of a new vertically aligned nanocomposite (VAN) structure based on two-dimensional (2D) layered oxides has been designed and self-assembled on both LaAlO₃ (001) and SrTiO₃ (001) substrates. The new VAN structure consists of epitaxially grown Co₃O₄ nanopillars embedded in the Bi₂WO₆ matrix with a unique 2D layered structure, as evidenced by the microstructural analysis. Physical property measurements show that the new Bi₂WO₆-Co₃O₄ VAN structure exhibits strong ferromagnetic and piezoelectric response at room temperature as well as anisotropic permittivity response. This work demonstrates a new approach in processing multifunctional VANs structure based on the layered oxide systems towards future nonlinear optics, ferromagnets, and multiferroics.

Magnetoelectric systems could be used to develop magnetoelectric random access memory and microsensor devices. One promising system is the two-phase 3-1-type multiferroic nanocomposite in which a one-dimensional magnetic column is embedded in a three-dimensional ferroelectric matrix. However, it suffers from a number of limitations including unwanted leakage currents and the need for biasing with a magnetic field. Here we show that the addition of an antiferromagnet to a 3-1-type multiferroic nanocomposite can lead to a large, self-biased magnetoelectric effect at room temperature. Our three-phase system is composed of a ferroelectric Na0.5Bi0.5TiO3 matrix in which ferrimagnetic NiFe2O4 nanocolumns coated with antiferromagnetic p-type NiO are embedded. This system, which is self-assembled, exhibits a magnetoelectric coefficient of up to 1.38 × 10–9 s m–1, which is large enough to switch the magnetic anisotropy from the easy axis (Keff = 0.91 × 104 J m–3) to the easy plane (Keff = –1.65 × 104 J m–3).

In this work, we report the presence of surface-densified phases (β-Ni5O8, γ-Ni3O4, and δ-Ni7O8) in LiNiO2 (LNO)- and LiNi0.8Al0.2O2 (LNA)-layered compounds by combined atomic level scanning transmission electron microscopy (STEM) and electron energy loss spectroscopy (EELS). These surface phases form upon electrochemical aging at high state of charge corresponding to a fully delithiated state. A unique feature of these phases is the periodic occupancy by Ni2+ in the Li layer. This periodic Ni occupancy gives rise to extra diffraction reflections, which are qualitatively similar to those of the LiNi2O4 spinel structure, but these surface phases have a lower Ni valence state and cation content than spinel. These experimental results confirm the presence of thermodynamically stable surface phases and provide new insights into the phenomena of surface phase formation in Ni-rich layered structures.

Spurred by recent discoveries of high-temperature superconductivity in Fe-Se-based materials, the magnetic, electronic, and catalytic properties of iron chalcogenides have drawn significant attention. However, much remains to be understood about the sequence of phase formation in these systems. Here, we shed light on this issue by preparing a series of binary Fe-Se ultrathin diffusion couples via designed thin-film precursors and investigating their structural evolution as a function of composition and annealing temperature. Two previously unreported Fe-Se phases crystallized during the deposition process on a nominally room-temperature Si substrate in the 27-33 and 37-47% Fe (atomic percent) composition regimes. Both phases completely decompose after annealing to 200 °C in a nitrogen glovebox. At higher temperatures, the sequence of phase formation is governed by Se loss in the annealing process, consistent with what would be expected from the phase diagram. Films rich in Fe (53-59% Fe) crystalized during deposition as β-FeSe (P4/nmm) with preferred c-axis orientation to the amorphous SiO2 substrate surface, providing a means to nonepitaxial self-assembly of crystallographically aligned, iron-rich β-FeSe for future research. Our findings suggest that the crystallization of binary Fe-Se compounds at room temperature via near diffusionless transformations should be a significant consideration in future attempts to prepare metastable ternary and higher-order compounds containing Fe and Se.

In this work, scratch and nanoindentation testing was used to determine hardness, fracture toughness, strain rate sensitivity, and activation volumes on additively manufactured graded and uniform Ni-Nb bulk specimens. Characterization showed the presence of a two phase system consisting of Ni₃Nb and Ni₆Nb₇ intermetallics. Intermetallics were multimodal in nature, having grain and cell sizes spanning from a few nanometers to 10s of micrometers. The unique microstructure resulted in impressively high hardness, up to 20 GPa in the case of the compositionally graded sample. AM methods with surface deformation techniques are a useful way to rapidly probe material properties and alloy composition space.

In this work, scratch and nanoindentation testing was used to determine hardness, fracture toughness, strain rate sensitivity, and activation volumes on additively manufactured graded and uniform Ni-Nb bulk specimens. Characterization showed the presence of a two phase system consisting of Ni₃Nb and Ni₆Nb₇ intermetallics. Intermetallics were multimodal in nature, having grain and cell sizes spanning from a few nanometers to 10s of micrometers. The unique microstructure resulted in impressively high hardness, up to 20 GPa in the case of the compositionally graded sample. AM methods with surface deformation techniques are a useful way to rapidly probe material properties and alloy composition space.

Abstract not provided.

Magneto-optical (MO) coupling incorporates photon-induced change of magnetic polarization that can be adopted in ultrafast switching, optical isolators, mode convertors, and optical data storage components for advanced optical integrated circuits. However, integrating plasmonic, magnetic, and dielectric properties in one single material system poses challenges since one natural material can hardly possess all these functionalities. Here, co-deposition of a three-phase heterostructure composed of a durable conductive nitride matrix with embedded core–shell vertically aligned nanopillars, is demonstrated. The unique coupling between ferromagnetic NiO core and atomically sharp plasmonic Au shell enables strong MO activity out-of-plane at room temperature. Further, a template growth process is applied, which significantly enhances the ordering of the nanopillar array. The ordered nanostructure offers two schemes of spin polarization which result in stronger antisymmetry of Kerr rotation. The presented complex hybrid metamaterial platform with strong magnetic and optical anisotropies is promising for tunable and modulated all-optical-based nanodevices.

Searching for multifunctional materials with tunable magnetic and optical properties has been a critical task toward the implementation of future integrated optical devices. Vertically aligned nanocomposite (VAN) thin films provide a unique platform for multifunctional material designs. Here, a new metal-oxide VAN has been designed with plasmonic Au nanopillars embedded in a ferromagnetic La0.67Sr0.33MnO3 (LSMO) matrix. Such Au-LSMO nanocomposite presents intriguing plasmon resonance in the visible range and magnetic anisotropy property, which are functionalized by the Au and LSMO phase, respectively. Furthermore, the vertically aligned nanostructure of metal and dielectric oxide results in the hyperbolic property for near-field electromagnetic wave manipulation. Such optical and magnetic response could be further tailored by tuning the composition of Au and LSMO phases.

Metallic plasmonic hybrid nanostructures have attracted enormous research interest due to the combined physical properties coming from different material components and the broad range of applications in nanophotonic and electronic devices. However, the high loss and narrow range of property tunability of the metallic hybrid materials have limited their practical applications. In this study, a metallic alloy-based self-assembled plasmonic hybrid nanostructure, i.e., a BaTiO₃–Au_xAg_1–x (BTO) vertically aligned nanocomposite, has been integrated by a templated growth method for low-loss plasmonic systems. Comprehensive microstructural characterizations including high-resolution scanning transmission electron microscopy (HRSTEM), energy-dispersive X-ray spectroscopy (EDS), and three-dimensional (3D) electron tomography demonstrate the formation of an ordered “nano-domino-like” morphology with Au_0.4Ag_0.6 nanopillars as cylindrical cores and BTO as square shells. By comparing with the BTO–Au hybrid thin film, the BTO–Au_0.4Ag_0.6 alloyed film exhibits much broader plasmon resonance, hyperbolic dispersion, low-loss, and thermally robust features in the UV–vis–NIR wavelength region. This study provides a feasible platform for a complex alloyed plasmonic hybrid material design with low-loss and highly tunable optical properties toward all-optical integrated devices.

Dielectric–metallic hybrid metamaterials exhibit extraordinary optical properties due to the light–matter interactions at the dielectric–metallic interfaces. The ability in precision control of the light–matter interactions in nanoscale is key to tailor the optical properties of hybrid metamaterials. In this work, a complex 3D framework of multilayered self-assembled BaTiO3(BTO)-Au hybrid thin films is demonstrated with such precision control of the light–matter interaction in nanoscale. Unique “bamboo-like” Au nanostructures are formed via the bilayer and trilayer stacking of BTO-Au hybrid layers with interlayers of SrTiO3, CeO2, or MgO. Different film strain states introduced by the three interlayers result in variable diameter and density of Au nanopillars. Both simulated and experimental optical data demonstrate the localized surface plasmon resonance change and hyperbolic dispersion wavelength shift in visible to near-infrared because of the effective tuning of the Au nanopillar aspect ratio and free electron density. The highly tunable optical properties along with the ferroelectric behavior and thermal robustness of the 3D hybrid film enable it to be a great candidate for multifunctional applications. This study demonstrates a unique 3D approach for precision optical property tuning and combined functionalities in oxide–metal metamaterial systems toward future integrated photonic and electronic devices.

Ultrathin (5–50 nm) epitaxial superconducting niobium nitride (NbN) films were grown on AlN-buffered c-plane Al2O3 by an industrial scale physical vapor deposition technique at 400°C. Both X-ray diffraction and scanning electron microscopy analysis show high crystallinity of the (111)-oriented NbN films, with a narrow full-width-at-half-maximum of the rocking curve down to 0.030°. The lattice constant decreases with decreasing NbN layer thickness, suggesting lattice strain for films with thicknesses below 20 nm. The superconducting transition temperature, the transition width, the upper critical field, the irreversibility line, and the coherence length are closely correlated to the film thickness. IMPACT STATEMENT: This work realized high quality ultrathin epitaxial NbN films by an industry-scale PVD technology at low substrate temperature, which opens up new opportunities for quantum devices.

We propose a vertical TFET using atomic precision advanced manufacturing (APAM) to create an abrupt buried n++-doped source. We developed a gate stack that preserves the APAM source to accumulate holes above it, with a goal of band-to-band tunneling (BTBT) perpendicular to the gate – critical for the proposed device. A metal-insulator-semiconductor (MIS) capacitor shows hole accumulation above the APAM source, corroborated by simulation, demonstrating the TFET’s feasibility.

Orthorhombic RMnO3 (R = rare-earth cation) compounds are type-II multiferroics induced by inversion-symmetry-breaking of spin order. They hold promise for magneto-electric devices. However, no spontaneous room-temperature ferroic property has been observed to date in orthorhombic RMnO3. Here, using 3D straining in nanocomposite films of (SmMnO3)0.5((Bi,Sm)2O3)0.5, we demonstrate room temperature ferroelectricity and ferromagnetism with TC,FM ~ 90 K, matching exactly with theoretical predictions for the induced strain levels. Large in-plane compressive and out-of-plane tensile strains (−3.6% and +4.9%, respectively) were induced by the stiff (Bi,Sm)2O3 nanopillars embedded. The room temperature electric polarization is comparable to other spin-driven ferroelectric RMnO3 films. Also, while bulk SmMnO3 is antiferromagnetic, ferromagnetism was induced in the composite films. The Mn-O bond angles and lengths determined from density functional theory explain the origin of the ferroelectricity, i.e. modification of the exchange coupling. Our structural tuning method gives a route to designing multiferroics.

We present evidence of inverse Hall-Petch behavior for a single-phase high entropy alloy (CoCrFeMnNi) in ultra-high vacuum and show that it is associated with low friction coefficients (~0.3). Grain size measurements by STEM validate a recently proposed dynamic amorphization model that accurately predicts grain size-dependent shear strength in the inverse Hall-Petch regime. Wear rates in the initially soft (coarse grained) material were shown to be remarkably low (~10–6 mm3/N-m), the lowest for any HEA tested in an inert environment where oxidation and the formation of mixed metal-oxide films is mitigated. The combined high wear resistance and low friction are linked to the formation of an ultra-nanocrystalline near-surface layer. The dynamic amorphization model was also used to predict an average high angle grain boundary energy (0.87 J/m2). This value was used to explain cavitation-induced nanoporosity found in the highly deformed surface layer, a phenomenon that has been linked to superplasticity.

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Control of BO6 octahedral rotations at the heterointerfaces of dissimilar ABO3 perovskites has emerged as a powerful route for engineering novel physical properties. However, its impact length scale is constrained at 2–6 unit cells close to the interface and the octahedral rotations relax quickly into bulk tilt angles away from interface. Here, a long-range (up to 12 unit cells) suppression of MnO6 octahedral rotations in La0.9Ba0.1MnO3 through the formation of superlattices with SrTiO3 can be achieved. The suppressed MnO6 octahedral rotations strongly modify the magnetic and electronic properties of La0.9Ba0.1MnO3 and hence create a new ferromagnetic insulating state with enhanced Curie temperature of 235 K. The emergent properties in La0.9Ba0.1MnO3 arise from a preferential occupation of the out-of-plane Mn d3z2−r2 orbital and a reduced Mn eg bandwidth, induced by the suppressed octahedral rotations. The realization of long-range tuning of BO6 octahedra via superlattices can be applicable to other strongly correlated perovskites for exploring new emergent quantum phenomena.

Two-dimensional monolayers derived from 3D bulk structures remain a relatively unexplored class of materials because of the challenge of stabilizing nonepitaxial interfaces. Here, we report an unusual reconstruction during the deposition of precursors when targeting the synthesis of heterostructures with an odd number of PbSe monolayers. Multilayer elemental precursors of Pb|Se + V|Se were deposited to have the correct number of atoms to form [(PbSe)1+δ]q(VSe2)1 where q is the number of PbSe monolayers in the heterostructure. Structural analysis of the self-assembled precursor via X-ray reflectivity, X-ray diffraction, and HAADF-STEM suggests three different behaviors upon deposition. Precursors with q ≥ 7 and even values of q have the targeted nanoarchitectures after deposition, which are maintained as the products are self-assembled through a near diffusionless process. Significant lateral surface diffusion occurred during the deposition of precursors with q = 1, 3, and 5, resulting in the precursor to have a different nanoarchitecture than targeted. Additional perpendicular long-range diffusion occurs during self-assembly of these precursors, resulting in different final products than targeted. Density functional theory (DFT) calculations of PbSe blocks show that the odd-numbered layers are less stable than the even-numbered layers, which suggests an energetic driving force for the observed rearrangement. This work highlights the importance of understanding the reaction mechanism when attempting to prepare 2D layers of constituents with bulk 3D structures.

Inducing new phases in thick films via vertical lattice strain is one of the critical advantages of vertically aligned nanocomposites (VANs). In SrTiO3 (STO), the ground state is ferroelastic, and the ferroelectricity in STO is suppressed by the orthorhombic transition. Here, we explore whether vertical lattice strain in three-dimensional VANs can be used to induce new ferroelectric phases in SrTiO3:MgO (STO:MgO) VAN thin films. The STO:MgO system incorporates ordered, vertically aligned MgO nanopillars into a STO film matrix. Strong lattice coupling between STO and MgO imposes a large lattice strain in the STO film. We have investigated ferroelectricity in the STO phase, existing up to room temperature, using piezoresponse force microscopy, phase field simulation and second harmonic generation. We also serendipitously discovered the formation of metastable TiO nanocores in MgO nanopillars embedded in the STO film matrix. Our results emphasize the design of new phases via vertical epitaxial strain in VAN thin films. This journal is

The layered Ruddlesden–Popper crystal structure can host a broad range of functionally important behaviors. In this work, we establish extraordinary configurational disorder in a layered Ruddlesden–Popper (RP) structure using entropy stabilization assisted synthesis. A protype A₂CuO₄ RP cuprate oxide with five cations on the A-site sublattice is designed and fabricated into epitaxial single crystal films using pulsed laser deposition. When grown on a near lattice matched substrate, the (La_0.2Pr_0.2Nd_0.2Sm_0.2Eu_0.2)₂CuO₄ film features a T'-type RP structure with uniform A-site cation mixing and square-planar CuO4 units. These observations are made with a range of combined characterizations using X-ray diffraction, atomic-resolution scanning transmission electron microscopy, energy-dispersive X-ray spectroscopy, and X-ray absorption spectroscopy measurements. It is further found that heteroepitaxial strain plays an important role in crystal phase formation during synthesis. Compressive strain over ~1.5% results in the formation of a non-RP cubic phase consistent with a Cu_X2O₄ spinel structure. The ability to manipulate configurational complexity and move between 2D layered RP and 3D cubic crystal structures in cuprate and related materials promises to enable flexible design strategies for a range of functionalities, such as magnetoresistance, unconventional superconductivity, ferroelectricity, catalysis, and ion transport.

Reducing ion beam damage from the focused ion beam (FIB) during fabrication of cross sections is a well-known challenge for materials characterization, especially cross sectional characterization of nanostructures. To address this, a new method has been developed for cross section fabrication enabling high resolution transmission electron microscopy (TEM) analysis of 3-D nanostructures free of surrounding material and free of damage detectable by TEM analysis. Before FIB processing, nanopillars are encapsulated in a sacrificial oxide which acts as a protective layer during FIB milling. The cross sectional TEM lamella containing the nanopillars is then mounted and thinned with some modifications to conventional FIB sample preparation that provide stability for the lamella during the following wet-chemical dip etch. The wet-chemical etch of the TEM lamella removes the sacrificial oxide layer, freeing the nanopillars from any material that would obscure TEM imaging. Both high resolution TEM and aberration corrected scanning TEM images of Si/SiGe pillars with diameters down to 30 nm demonstrate the successful application of this approach.

Integration of nanoscale photonic and plasmonic components on Si substrates is a critical step toward Si-based integrated nanophotonic devices. In this work, a set of unique complex 3D metamaterials with intercalated nanolayered and nanopillar structures with tunable plasmonic and optical properties on Si substrates is designed. More specifically, the 3D metamaterials combine metal (Au) nanopillars and alternating metal-nitride (Au-TiN and Au-TaN) nanolayers, epitaxially grown on Si substrates. The ultrafine Au nanopillars (d ≈ 3 nm) continuously grow throughout all the nanolayers with high epitaxial quality. Novel optical properties, such as highly anisotropic optical property, high absorbance covering the entire visible spectrum regime, and hyperbolic property in the visible regime, are demonstrated. Furthermore, a waveguide based on a silicon nitride (Si3N4) ridge with a multilayer structure is successfully fabricated. The demonstration of 3D nanoscale metamaterial design integrated on Si opens up a new route toward tunable metamaterials nanostructure designs with versatile material selection for various optical components in Si integrated photonics.

Hydrogen lithography has been used to template phosphine-based surface chemistry to fabricate atomic-scale devices, a process we abbreviate as atomic precision advanced manufacturing (APAM). Here, we use mid-infrared variable angle spectroscopic ellipsometry (IR-VASE) to characterize single-nanometer thickness phosphorus dopant layers (δ-layers) in silicon made using APAM compatible processes. A large Drude response is directly attributable to the δ-layer and can be used for nondestructive monitoring of the condition of the APAM layer when integrating additional processing steps. The carrier density and mobility extracted from our room temperature IR-VASE measurements are consistent with cryogenic magneto-transport measurements, showing that APAM δ-layers function at room temperature. Finally, the permittivity extracted from these measurements shows that the doping in the APAM δ-layers is so large that their low-frequency in-plane response is reminiscent of a silicide. However, there is no indication of a plasma resonance, likely due to reduced dimensionality and/or low scattering lifetime.

Room-temperature ferromagnetic materials with perpendicular magnetic anisotropy are widely sought after for spintronics, magnetic data storage devices, and stochastic computing. To address this need, a new Fe-BaTiO3 vertically aligned nanocomposite (VAN) has been fabricated—combining both the strong room-temperature ferromagnetic properties of Fe nanopillars and the strong room-temperature ferroelectric properties of the BaTiO3 matrix. Furthermore, the Fe-BaTiO3 VAN allows for highly anisotropic magnetic properties with tunable magnetization and coercivity. In addition, to demonstrate the multiferroic properties of the Fe-BaTiO3 system, the new metal-oxide hybrid material system has been incorporated in a multilayer stack. This new multiferroic VAN system possesses great potential in magnetic anisotropy and property tuning and demonstrates a new material family of oxide-metal hybrid systems for room-temperature multiferroic material designs.

The structural and chemical characterization at the atomic-scale plays a critical role in understanding the structure-property relationship in precise electrical devices such as those produced by atomic-precision advanced manufacturing (APAM). APAM, utilizing hydrogen lithography in a scanning tunneling microscope, offers a potential pathway to ultra-efficient transistors, and has been developed to produce phosphorus (P)-based donor devices integrated into bare Si substrates. Structural characterization of the buried, Si with P dopant (Si:P) delta-layer in the devices by scanning transmission electron microscopy (STEM), however, is a challenge due to similar atomic number and low concentration of the P dopants. In this paper, we describe several efforts of utilizing advanced STEM imagining and spectroscopic techniques to quantify the Si:P deltalayers. STEM imaging combining low-angle and high-angle annular dark-field (LAADF, HAADF) detectors as well as atomic-scale elemental mapping using energy-dispersive X-ray spectroscopy (EDS) are used to reveal the P and defect distribution across the delta-layer processed under various thermal conditions.

Composition dependence of second harmonic generation, refractive index, extinction coefficient, and optical bandgap in 20 nm thick crystalline Hf1-xZrxO2 (0 ≤ x ≤ 1) thin films is reported. The refractive index exhibits a general increase with increasing ZrO2 content with all values within the range of 1.98-2.14 from 880 nm to 400 nm wavelengths. A composition dependence of the indirect optical bandgap is observed, decreasing from 5.81 eV for HfO2 to 5.17 eV for Hf0.4Zr0.6O2. The bandgap increases for compositions with x > 0.6, reaching 5.31 eV for Hf0.1Zr0.9O2. Second harmonic signals are measured for 880 nm incident light. The magnitude of the second harmonic signal scales with the magnitude of the remanant polarization in the composition series. Film compositions that display near zero remanent polarizations exhibit minimal second harmonic generation while those with maximum remanent polarization also display the largest second harmonic signal. The results are discussed in the context of ferroelectric phase assemblage in the hafnium zirconium oxide films and demonstrate a path toward a silicon-compatible integrated nonlinear optical material.

Atomic precision advanced manufacturing (APAM) offers creation of donor devices in an atomically thin layer doped beyond the solid solubility limit, enabling unique device physics. This presents an opportunity to use APAM as a pathfinding platform to investigate digital electronics at the atomic limit. Scaling to smaller transistors is increasingly difficult and expensive, necessitating the investigation of alternative fabrication paths that extend to the atomic scale. APAM donor devices can be created using a scanning tunneling microscope (STM). However, these devices are not currently compatible with industry standard fabrication processes. There exists a tradeoff between low thermal budget (LT) processes to limit dopant diffusion and high thermal budget (HT) processes to grow defect-free layers of epitaxial Si and gate oxide. To this end, we have developed an LT epitaxial Si cap and LT deposited Al2O3 gate oxide integrated with an atomically precise single-electron transistor (SET) that we use as an electrometer to characterize the quality of the gate stack. The surface-gated SET exhibits the expected Coulomb blockade behavior. However, the gate’s leverage over the SET is limited by defects in the layers above the SET, including interfaces between the Si and oxide, and structural and chemical defects in the Si cap. We propose a more sophisticated gate stack and process flow that is predicted to improve performance in future atomic precision devices.

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Low friction is demonstrated with pure polycrystalline tantalum sliding contacts in both molecular dynamics simulations and ultrahigh vacuum experiments. This phenomenon is shown to be correlated with deformation occurring primarily through grain boundary sliding and can be explained using a recently developed predictive model for the shear strength of metals. Specifically, low friction is associated with grain sizes at the interface being smaller than a critical, material-dependent value, where a crossover from dislocation mediated plasticity to grain-boundary sliding occurs. Low friction is therefore associated with inverse Hall-Petch behavior and softening of the interface. Direct quantitative comparisons between experiments and atomistic calculations are used to illustrate the accuracy of the predictions.

Tetragonal tungsten bronze (TTB) materials are one of the most promising classes of materials for ferroelectric and nonlinear optical devices, owing to their very unique noncentrosymmetric crystal structure. In this work, a new TTB phase of LiNb6Ba5Ti4O30 (LNBTO) has been discovered and studied. A small amount of a secondary phase, LiTiO2 (LTO), has been incorporated as nanopillars that are vertically embedded in the LNBTO matrix. The new multifunctional nanocomposite thin film presents exotic highly anisotropic microstructure and properties, e.g., strong ferroelectricity, high optical transparency, anisotropic dielectric function, and strong optical nonlinearity evidenced by the second harmonic generation results. An optical waveguide structure based on the stacks of α-Si on SiO2/LNBTO-LTO has been fabricated, exhibiting low optical dispersion with an optimized evanescent field staying in the LNBTO-LTO active layer. This work highlights the combination of new TTB material designs and vertically aligned nanocomposite structures for further enhanced anisotropic and nonlinear properties.

Light coupling with patterned subwavelength hole arrays induces enhanced transmission supported by the strong surface plasmon mode. In this work, a nanostructured plasmonic framework with vertically built-in nanohole arrays at deep-subwavelength scale (6 nm) is demonstrated using a two-step fabrication method. The nanohole arrays are formed first by the growth of a high-quality two-phase (i.e., Au–TiN) vertically aligned nanocomposite template, followed by selective wet-etching of the metal (Au). Such a plasmonic nanohole film owns high epitaxial quality with large surface coverage and the structure can be tailored as either fully etched or half-way etched nanoholes via careful control of the etching process. The chemically inert and plasmonic TiN plays a role in maintaining sharp hole boundary and preventing lattice distortion. Optical properties such as enhanced transmittance and anisotropic dielectric function in the visible regime are demonstrated. Numerical simulation suggests an extended surface plasmon mode and strong field enhancement at the hole edges. Two demonstrations, including the enhanced and modulated photoluminescence by surface coupling with 2D perovskite nanoplates and the refractive index sensing by infiltrating immersion liquids, suggest the great potential of such plasmonic nanohole array for reusable surface plasmon-enhanced sensing applications.

Three-dimensional (3D) strain induced in self-assembled vertically aligned nanocomposite (VAN) epitaxial films provides an unrivaled method to induce very large strains in thin films. Here, by growing VAN films of EuTiO3 (ETO)-Eu2O3 (EO) with different EO fractions, the vertical strain was systematically increased in ETO, up to 3.15%, and the Eu-Ti-Eu bond angle along ⟨111»decreased by up to 1°, leading to a weakening of the antiferromagnetic interactions and switching from antiferromagnetic to ferromagnetic behavior. Our work has shown for the first time that Eu-Ti-Eu superexchange interactions play a key role in determining the magnetic ground state of ETO. More broadly, our work serves as an exemplar to show that multifunctionalities in strong spin-lattice coupling perovskite oxides can be uniquely tuned at the atomic scale using simple VAN structures.

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Ultrathin epitaxial films of ferromagnetic insulators (FMIs) with Curie temperatures near room temperature are critically needed for use in dissipationless quantum computation and spintronic devices. However, such materials are extremely rare. Here, a room-temperature FMI is achieved in ultrathin La0.9Ba0.1MnO3 films grown on SrTiO3 substrates via an interface proximity effect. Detailed scanning transmission electron microscopy images clearly demonstrate that MnO6 octahedral rotations in La0.9Ba0.1MnO3 close to the interface are strongly suppressed. As determined from in situ X-ray photoemission spectroscopy, O K-edge X-ray absorption spectroscopy, and density functional theory, the realization of the FMI state arises from a reduction of Mn eg bandwidth caused by the quenched MnO6 octahedral rotations. The emerging FMI state in La0.9Ba0.1MnO3 together with necessary coherent interface achieved with the perovskite substrate gives very high potential for future high performance electronic devices.

Intermetallic alloys possess exceptional soft magnetic properties, including high permeability, low coercivity, and high saturation induction, but exhibit poor mechanical properties that make them impractical to bulk process and use at ideal compositions. We used laser-based Additive Manufacturing to process traditionally brittle Fe–Co and Fe–Si alloys in bulk form without macroscopic defects and at near-ideal compositions for electromagnetic applications. The binary Fe–50Co, as a model material, demonstrated simultaneous high strength (600–700 MPa) and high ductility (35%) in tension, corresponding to a ∼300% increase in strength and an order-of-magnitude improvement in ductility relative to conventionally processed material. Atomic-scale toughening and strengthening mechanisms, based on engineered multiscale microstructures, are proposed to explain the unusual combination of mechanical properties. This work presents an instance in which metal Additive Manufacturing processes are enabling, rather than limiting, the development of higher-performance alloys.

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Thin tellurium (Te) has been predicted as a potential two dimensional system exhibiting superior thermoelectric and electrical properties. Here, we report the synthesis of high quality ultrathin Te nanostructures and the study of their electrical properties at room temperature. High quality ultrathin Te nanostructures are obtained by high temperature vapor phase deposition on c-plane sapphire substrates. The obtained nanostructures are as thin as 3 nm and exhibit α-Te phase with trigonal crystal structure. Room temperature electrical measurements show significantly higher electrical conductivity compared to prior reports of Te in bulk form or in nanostructure form synthesized by low temperature vapor deposition or wet chemical methods. Additionally, these nanostructures exhibit high field effect hole mobility comparable to black-phosphorous measured previously under similar conditions.

Grain boundary (GB) solute segregation has been proposed as a new mechanism to stabilize nanocrystalline (NC) metals. In this study, we investigate the thermal stability and GB solute segregation in a noble metal alloy system (Pt–Au). Thermal stability of the Pt.90Au.10 alloy system was evaluated by annealing a thin film (∼20 nm in thickness) at 500 °C and 700 °C as well as a thick film (∼2 µm in thickness) at a temperature range from 200 °C to 700 °C. The remarkable stability of the Pt.90Au.10 alloy system was demonstrated by comparing its thermal stability to that of pure Pt films processed under identical conditions. Although presence of voids in the GBs may contribute to thermal stability, the enhanced thermal stability of the Pt.90Au.10 alloy is mainly attributed to preferential Au segregation to GBs in the alloy film, which is revealed by aberration-corrected scanning transmission electron microscopy. Our results show that Au segregation to GBs is heterogeneous, with variation in solute content between different GBs as well as non-uniformity along individual GBs. The heterogeneity is dependent on the annealing temperature and is less pronounced at a higher processing temperatures (e.g., 700 °C). By using the noble Pt–Au system, which avoids oxidation and impurities, this study validates the mechanism of GB solute segregation and provides further understanding of the thermodynamics and kinetics underlying NC stabilization.

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Vertically aligned nanocomposite (VAN) films have self-assembled pillar-matrix nanostructures. Owing to their large area-to-volume ratios, interfaces in VAN films are expected to play key roles in inducing functional properties, but our understanding is hindered by limited knowledge about their structures. Motivated by the lack of definitive explanation for the experimentally found enhanced ionic conductivity in Sm-doped-CeO2/SrTiO3 VAN films, we determine the structure at vertical interfaces using random structure searching and explore how it can affect ionic conduction. Interatomic potentials are used to perform the initial searching, followed by first-principles calculations for refinement. Previously unknown structures are found, with lower energy than that of an optimized hand-built model. We find a strongly distorted oxygen sublattice which gives a complex landscape of vacancy energies. The cation lattice remains similar to the bulk phase, but has a localized strain field. The excess energy of the interface is similar to that of high angle grain boundaries in SrTiO3.

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We discuss chemical, structural, and ellipsometry characterization of low temperature epitaxial Si. While low temperature growth is not ideal, we are still able to prepare crystalline Si to cap functional atomic precision devices.

A long-term goal for superconductors is to increase the superconducting transition temperature, TC. In cuprates, TC depends strongly on the out-of-plane Cu-apical oxygen distance and the in-plane Cu-O distance, but there has been little attention paid to tuning them independently. Here, in simply grown, self-assembled, vertically aligned nanocomposite thin films of La2CuO4+δ + LaCuO3, by strongly increasing out-of-plane distances without reducing in-plane distances (three-dimensional strain engineering), we achieve superconductivity up to 50 K in the vertical interface regions, spaced ∼50 nm apart. No additional process to supply excess oxygen, e.g., by ozone or high-pressure oxygen annealing, was required, as is normally the case for plain La2CuO4+δ films. Our proof-of-concept work represents an entirely new approach to increasing TC in cuprates or other superconductors.

Tunable plasmonic structure at the nanometer scale presents enormous opportunities for various photonic devices. In this work, we present a hybrid plasmonic thin film platform: i.e., a vertically aligned Au nanopillar array grown inside a TiN matrix with controllable Au pillar density. Compared to single phase plasmonic materials, the presented tunable hybrid nanostructures attain optical flexibility including gradual tuning and anisotropic behavior of the complex dielectric function, resonant peak shifting and change of surface plasmon resonances (SPRs) in the UV-visible range, all confirmed by numerical simulations. The tailorable hybrid platform also demonstrates enhanced surface plasmon Raman response for Fourier-transform infrared spectroscopy (FTIR) and photoluminescence (PL) measurements, and presents great potentials as designable hybrid platforms for tunable optical-based chemical sensing applications.

Nanocrystalline metals offer significant improvements in structural performance over conventional alloys. However, their performance is limited by grain boundary instability and limited ductility. Solute segregation has been proposed as a stabilization mechanism, however the solute atoms can embrittle grain boundaries and further degrade the toughness. In the present study, we confirm the embrittling effect of solute segregation in Pt–Au alloys. However, more importantly, we show that inhomogeneous chemical segregation to the grain boundary can lead to a new toughening mechanism termed compositional crack arrest. Energy dissipation is facilitated by the formation of nanocrack networks formed when cracks arrested at regions of the grain boundaries that were starved in the embrittling element. This mechanism, in concert with triple junction crack arrest, provides pathways to optimize both thermal stability and energy dissipation. A combination of in situ tensile deformation experiments and molecular dynamics simulations elucidate both the embrittling and toughening processes that can occur as a function of solute content.

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Magnetic property enhancement of alnico, a rare-earth free permanent magnet, is highly dependent on both the initial microstructure and the evolution of the spinodal decomposition (SD) inside each grain during the heat treatment process. The size, shape and distribution of the magnetic FeCo-rich (α₁) phase embedded in continuous non-magnetic AlNi-rich (α₂) phase as well as a minor Cu-enriched phase residing in between are shown to be crucial in controlling coercivity. Phase and magnetic domain morphology in a commercial alnico 9 alloy was studied using a combination of structural characterization techniques, including scanning electron microscopy, electron backscatter diffraction, aberration-corrected scanning transmission electron microscopy and Lorentz microscopy. Our results showed that casting created structural nonuniformity and defects, such as porosity, TiS₂ precipitates and grain misorientation, are heterogeneously distributed, with the center section having the best crystallographic orientation and minimal defects. The optimal spinodal is a “mosaic structure”, composed of rod-shape α1 phase with {110} or {100} planar faceting and diameter of ~30–45nm. There is also a Cu-enriched phase residing at the corners of two < 110 > facets of the α1 phase. Furthermore, it was observed that grain boundary phase reverse magnetization direction at lower external magnetic field compared to the SD region inside the grain. Improving grain orientation uniformity, reducing detrimental grain boundary phase volume fraction, and the branching of the α₁ rods, as well as their diameter, are promising routes to improve energy product of alnico.

Quantum-size-controlled photoelectrochemical (QSC-PEC) etching, which uses quantum confinement effects to control size, can potentially enable the fabrication of epitaxial quantum nanostructures with unprecedented accuracy and precision across a wide range of materials systems. However, many open questions remain about this new technique, including its limitations and broader applicability. In this project, using an integrated experimental and theoretical modeling approach, we pursue a greater understanding of the time-dependent QSC-PEC etch process and to uncover the underlying mechanisms that determine its ultimate accuracy and precision. We also seek to broaden our understanding of the scope of its ultimate applicability in emerging nanostructures and nanodevices.

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Recent work suggests that thermally stable nanocrystallinity in metals is achievable in several binary alloys by modifying grain boundary energies via solute segregation. The remarkable thermal stability of these alloys has been demonstrated in recent reports, with many alloys exhibiting negligible grain growth during prolonged exposure to near-melting temperatures. Pt–Au, a proposed stable alloy consisting of two noble metals, is shown to exhibit extraordinary resistance to wear. Ultralow wear rates, less than a monolayer of material removed per sliding pass, are measured for Pt–Au thin films at a maximum Hertz contact stress of up to 1.1 GPa. This is the first instance of an all-metallic material exhibiting a specific wear rate on the order of 10−9 mm3 N−1 m−1, comparable to diamond-like carbon (DLC) and sapphire. Remarkably, the wear rate of sapphire and silicon nitride probes used in wear experiments are either higher or comparable to that of the Pt–Au alloy, despite the substantially higher hardness of the ceramic probe materials. High-resolution microscopy shows negligible surface microstructural evolution in the wear tracks after 100k sliding passes. Mitigation of fatigue-driven delamination enables a transition to wear by atomic attrition, a regime previously limited to highly wear-resistant materials such as DLC.

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For this study, diamond-like carbon (DLC) films were tribochemically formed from ambient hydrocarbons on the surface of a highly stable nanocrystalline Pt-Au alloy. A sliding contact between an alumina sphere and Pt-Au coated steel exhibited friction coefficients as low as μ = 0.01 after dry sliding in environments containing trace (ppb) organics. Ex situ analysis indicated that the change in friction coefficient was due to the formation of amorphous carbon films, and Raman spectroscopy and elastic recoil analysis showed that these films consist of sp²/sp³ amorphous carbon with as much as 20% hydrogen. Transmission electron microscopy indicated these films had thicknesses exceeding 100 nm, and were enhanced by the incorporation of worn Pt-Au nanoparticles. The result was highly wear-resistant, low-friction DLC/Pt-Au nanocomposites. Atomistic simulations of hydrocarbons under shear between rigid Pt slabs using a reactive force field showed stress-induced changes in bonding through chain scission, a likely route towards the formation of these coatings. This novel demonstration of in situ tribochemical formation of self-lubricating films has significant impact potential in a wide range of engineering applications.

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Three-dimensional (3D) frameworks have been successfully constructed by interlayering La0.7Sr0.3MnO3 (LSMO)-CeO2 based epitaxial vertically aligned nanocomposite (VAN) thin films with pure CeO2 (or LSMO) layers. Such 3D interconnected CeO2 scaffolds integrate the lateral film strain by the interlayers with the vertical strain in VAN layers, and thus achieve the maximized strain tuning in LSMO. More importantly, by varying the types of the interlayers (i.e., CeO2 or LSMO) and the number of interlayers from 1 to 3 layers, such 3D framework nanostructures effectively tune the electrical transport properties of LSMO, e.g., from a 3D insulating CeO2 framework with integrated magnetic tunnel junction structures, to a 3D conducting LSMO framework, where the magnetoresistance (MR) peak values have been tuned systematically to a record high of 66% at 56 K and enhanced MR properties at high temperatures above room temperature (∼325 K). This new 3D framed design provides a novel approach in maximizing film strain, enhancing strain-driven functionalities, and manipulating the electrical transport properties effectively.

Despite the advances in the methods for fabricating nanoscale materials, critical issues remain, such as the difficulties encountered in anchoring, and the deterioration in their stability after integration with other components. These issues need to be addressed to further increase the scope of their applicability. In this study, using epitaxial mesoscopic host matrices, materials are spatially confined at the nanoscale, and are supported, anchored, and stabilized. They also exhibit properties distinct from the bulk counterparts proving their high quality nanoscale nature. ZnFe2O4 and SrTiO3 are used as the model confined material and host matrix, respectively. The ZnFe2O4 phases are spatially confined by the SrTiO3 mesoscopic matrix and have strongly enhanced ferrimagnetic properties as compared to bulk and plain thin films of ZnFe2O4, with a Curie temperature of ≈500 K. The results of a series of control experiments and characterization measurements indicate that cationic inversion, which originates from the high interface-to-volume ratio of the ZnFe2O4 phase in the ZnFe2O4–SrTiO3 nanocomposite film, is responsible for the magnetization enhancement. An exchange bias is observed, owing to the coexistence of ferrimagnetic and antiferromagnetic regions in the confined ZnFe2O4 phase. The magnetic properties are dependent on the ZnFe2O4 crystallite size, which can be controlled by the growth conditions.

The delocalization of x-ray signals limits the spatial resolution in atomic-scale elemental mapping by scanning transmission electron microscopy (STEM) using energy-dispersive x-ray spectroscopy (EDS). In this study, using a SrTiO 3 [001] single crystal, we show that the x-ray localization to atomic columns is strongly dependent on crystal thickness, and a thin crystal is critical for improving the spatial resolution in atomic-scale EDS mapping. A single-frame scanning technique is used in this study instead of the multiple-frame technique to avoid peak broadening due to tracking error. The strong thickness dependence is realized by measuring the full width at half maxima (FWHM) as well as the peak-to-valley (P/V) ratio of the EDS profiles for Ti K and Sr K + L, obtained at several crystal thicknesses. A FWHM of about 0.16 nm and a P/V ratio of greater than 7.0 are obtained for Ti K for a crystal thickness of less than 20 nm. With increasing crystal thickness, the FWHM and P/V ratio increases and decreases, respectively, indicating the advantage of using a thin crystal for high-resolution EDS mapping.

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Magnetoresistive random-access memory (MRAM) is poised to become a next-generation information storage device. Yet, many materials challenges remain unsolved before it can become a widely used memory storage solution. Among them, an urgent need is to identify a material system that is suitable for downscaling and is compatible with low-power logic applications. Self-assembled, vertically aligned La_2/3Sr_1/3MnO₃: ZnO nanocomposites, in which La_2/3Sr_1/3MnO₃ (LSMO) matrix and ZnO nanopillars form an intertwined structure with coincident-site-matched growth occurring between the LSMO and ZnO vertical interfaces, may offer new MRAM applications by combining their superior electric, magnetic ( B ), and optical properties. Here, in this Rapid Communication, we show the results of electrical current induced magnetic hysteresis in magnetoresistance measurements in these nanopillar composites. We observe that when the current level is low, for example, 1 µA, the magnetoresistance displays a linear, negative, nonhysteretic B field dependence. Surprisingly, when a large current is used, I > 10 µA, a hysteretic behavior is observed when the B field is swept in the up and down directions. This hysteresis weakens as the sample temperature is increased. Finally, a possible spin-valve mechanism related to this electrical current induced magnetic hysteresis is proposed and discussed.

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We demonstrate inverse Hall-Petch behavior (softening) in pure copper sliding contacts at cryogenic temperatures. By kinetically limiting grain growth, it is possible to generate a quasi-stable ultra-nanocrystalline surface layer with reduced strength. In situ electrical contact resistance measurements were used to determine grain size evolution at the interface, in agreement with reports of softening in highly nanotwinned copper. We also show evidence of a direct correlation between surface grain size and friction coefficient, validating a model linking friction in pure metals and the transition from dislocation mediated plasticity to grain boundary sliding.

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Atomic motion at grain boundaries is essential to microstructure development, growth and stability of catalysts and other nanostructured materials. However, boundary atomic motion is often too fast to observe in a conventional transmission electron microscope (TEM) and too slow for ultrafast electron microscopy. We report on the entire transformation process of strained Pt icosahedral nanoparticles (ICNPs) into larger FCC crystals, captured at 2.5 ms time resolution using a fast electron camera. Results show slow diffusive dislocation motion at nm/s inside ICNPs and fast surface transformation at μm/s. By characterizing nanoparticle strain, we show that the fast transformation is driven by inhomogeneous surface stress. And interaction with pre-existing defects led to the slowdown of the transformation front inside the nanoparticles. Particle coalescence, assisted by oxygen-induced surface migration at T ≥ 300°C, also played a critical role. Thus by studying transformation in the Pt ICNPs at high time and spatial resolution, we obtain critical insights into the transformation mechanisms in strained Pt nanoparticles.

Atomic motion at grain boundaries is essential to microstructure development, growth and stability of catalysts and other nanostructured materials. However, boundary atomic motion is often too fast to observe in a conventional transmission electron microscope (TEM) and too slow for ultrafast electron microscopy. Here, we report on the entire transformation process of strained Pt icosahedral nanoparticles (ICNPs) into larger FCC crystals, captured at 2.5 ms time resolution using a fast electron camera. Results show slow diffusive dislocation motion at nm/s inside ICNPs and fast surface transformation at μm/s. By characterizing nanoparticle strain, we show that the fast transformation is driven by inhomogeneous surface stress. And interaction with pre-existing defects led to the slowdown of the transformation front inside the nanoparticles. Particle coalescence, assisted by oxygen-induced surface migration at T ≥ 300 °C, also played a critical role. Thus by studying transformation in the Pt ICNPs at high time and spatial resolution, we obtain critical insights into the transformation mechanisms in strained Pt nanoparticles.

Layered materials, e.g., graphene and transition metal (di)chalcogenides, holding great promises in nanoscale device applications have been extensively studied in fundamental chemistry, solid state physics and materials research areas. In parallel, layered oxides (e.g., Aurivillius and Ruddlesden-Popper phases) present an attractive class of materials both because of their rich physics behind and potential device applications. In this work, we report a novel layered oxide material with self-assembled layered supercell structure consisting of two mismatch-layered sublattices of [Bi3O3+δ] and [MO2]1.84 (M = Al/Mn, simply named BAMO), i.e., alternative layered stacking of two mutually incommensurate sublattices made of a three-layer-thick Bi-O slab and a one-layer-thick Al/Mn-O octahedra slab in the out-of-plane direction. Strong room-temperature ferromagnetic and piezoelectric responses as well as anisotropic optical property have been demonstrated with great potentials in various device applications. The realization of the novel BAMO layered supercell structure in this work has paved an avenue toward exploring and designing new materials with multifunctionalities.

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The field of oxide electronics has seen tremendous growth over two decades and oxide materials find wide-ranging applications in information storage, fuel cells, batteries, and more. Phase transitions, such as magnetic and metal-to-insulator transitions, are one of the most important phenomena in oxide nanostructures. Many novel devices utilizing these phase transitions have been proposed, ranging from ultrafast switches for logic applications to low power memory structures. Yet, despite this promise and many years of research, a complete understanding of phase transitions in oxide nanostructures remains elusive. In this LDRD, we report two important observations of phase transitions. We conducted a systematic study of these transitions. Moreover, emergent quantum phenomena due to the strong correlations and interactions among the charge, orbital, and spin degrees of freedom inherent in transition metal oxides were explored. In addition, a new, fast atomic-scale chemical imaging technique developed through the characterization of these oxides is presented.

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A simple one-step pulsed laser deposition (PLD) method has been applied to grow self-assembled metal-oxide nanocomposite thin films. The as-deposited Co-BaZrO3 films show high epitaxial quality with ultra-fine vertically aligned Co nanopillars (diameter <5 nm) embedded in a BZO matrix. The diameter of the nanopillars can be further tuned by varying the deposition frequency. The metal and oxide phases grow separately without inter-diffusion or mixing. Taking advantage of this unique structure, a high saturation magnetization of ∼1375 emu cm-3 in the Co-BaZrO3 nanocomposites has been achieved and further confirmed by Lorentz microscopy imaging in TEM. Furthermore, the coercivity values of this nanocomposite thin films range from 600 Oe (20 Hz) to 1020 Oe (2 Hz), which makes the nanocomposite an ideal candidate for high-density perpendicular recording media.

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We report lasing from nonpolar p-i-n InGaN/GaN multi-quantum well core-shell single-nanowire lasers by optical pumping at room temperature. The nanowire lasers were fabricated using a hybrid approach consisting of a top-down two-step etch process followed by a bottom-up regrowth process, enabling precise geometrical control and high material gain and optical confinement. The modal gain spectra and the gain curves of the core-shell nanowire lasers were measured using micro-photoluminescence and analyzed using the Hakki-Paoli method. Significantly lower lasing thresholds due to high optical gain were measured compared to previously reported semipolar InGaN/GaN core-shell nanowires, despite significantly shorter cavity lengths and reduced active region volume. Mode simulations show that due to the core-shell architecture, annular-shaped modes have higher optical confinement than solid transverse modes. The results show the viability of this p-i-n nonpolar core-shell nanowire architecture, previously investigated for next-generation light-emitting diodes, as low-threshold, coherent UV-visible nanoscale light emitters, and open a route toward monolithic, integrable, electrically injected single-nanowire lasers operating at room temperature.

Elemental mapping at the atomic-scale by scanning transmission electron microscopy (STEM) using energy-dispersive X-ray spectroscopy (EDS) provides a powerful real-space approach to chemical characterization of crystal structures. However, applications of this powerful technique have been limited by inefficient X-ray emission and collection, which require long acquisition times. Recently, using a lattice-vector translation method, we have shown that rapid atomic-scale elemental mapping using STEM-EDS can be achieved. This method provides atomic-scale elemental maps averaged over crystal areas of ~ few 10 nm2 with the acquisition time of ~2 s or less. Here we report the details of this method, and, in particular, investigate the experimental conditions necessary for achieving it. It shows, that in addition to usual conditions required for atomic-scale imaging, a thin specimen is essential for the technique to be successful. Phenomenological modeling shows that the localization of X-ray signals to atomic columns is a key reason. The effect of specimen thickness on the signal delocalization is studied by multislice image simulations. The results show that the X-ray localization can be achieved by choosing a thin specimen, and the thickness of less than about 22 nm is preferred for SrTiO3 in [001] projection for 200 keV electrons.

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Room-temperature (RT) multiferroics, possessing ferroelectricity and ferromagnetism simultaneously at RT, hold great promise in miniaturized devices including sensors, actuators, transducers, and multi-state memories. In this work, we report a novel 2D layered RT multiferroic system with self-assembled layered supercell structure consisting of two mismatch-layered sub-lattices of [Bi₃O_3+δ] and [MO₂]_1.84 (M=Al/Mn, simply named as BAMO), i.e., alternative layered stacking of two mutually incommensurate sublattices made of a three-layer-thick Bi-O slab and a one-layer-thick Al/Mn-O octahedra slab along the out-of-plane direction. Strong room-temperature multiferroic responses, e.g., ferromagnetic and ferroelectric properties, have been demonstrated and attributed to the highly anisotropic 2D nature of the non-ferromagnetic and ferromagnetic sublattices which are highly mismatched. The work demonstrates an alternative design approach for new 2D layered oxide materials that hold promises as single-phase multiferroics, 2D oxides with tunable bandgaps, and beyond.

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Ultrafast optical microscopy is an important tool for examining fundamental phenomena in semiconductor nanowires with high temporal and spatial resolution. Here, we used this technique to study carrier dynamics in single GaN/InGaN core-shell nonpolar multiple quantum well nanowires. We find that intraband carrier-carrier scattering is the main channel governing carrier capture, while subsequent carrier relaxation is dominated by three-carrier Auger recombination at higher densities and bimolecular recombination at lower densities. The Auger constants in these nanowires are approximately 2 orders of magnitude lower than in planar InGaN multiple quantum wells, highlighting their potential for future light-emitting devices.

ZrTe₅, a topological semimetal, has recently attracted great attention due to its extraordinary electronic properties. Extensive studies have been carried out in ZrTe₅ on their charge transport properties. However, there are few studies on their spin properties. One well-developed technique to study spin degeneracy of a Landau level (LL) in a two-dimensional system is by tilting magnetic field. It is known that the Landau level energy is proportional to the magnetic field normal component while the Zeeman energy scales with the total magnetic field. Therefore, these two energy scales can be tuned relatively to each other in a tilted magnetic field.

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A three-dimensional (3D) Dirac semimetal (DS) is an analogue of graphene, but with linear energy dispersion in all (three) momentum directions. 3D DSs have been a fertile playground in discovering novel quantum particles, for example Weyl fermions, in solid state systems. Many 3D DSs were theoretically predicted and experimentally confirmed. We report here the results in exfoliated ZrTe 5 thin flakes from the studies of aberration-corrected scanning transmission electron microscopy and low temperature magneto-transport measurements. Several unique results were observed. First, a π Berry phase was obtained from the Landau fan diagram of the Shubnikov-de Haas oscillations in the longitudinal conductivity σxx. Second, the longitudinal resistivity ρxx shows a linear magnetic field dependence in the quantum limit regime. Most surprisingly, quantum oscillations were also observed at fractional Landau level indices N = 5/3 and 7/5, demonstrating strong electron-electron interaction effects in ZrTe5.

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Resistive switches are non-volatile memory cells based on nano-ionic redox processes that offer energy efficient device architectures and open pathways to neuromorphics and cognitive computing. However, channel formation typically requires an irreversible, not well controlled electroforming process, giving difficulty to independently control ionic and electronic properties. The device performance is also limited by the incomplete understanding of the underlying mechanisms. Here, we report a novel memristive model material system based on self-assembled Sm-doped CeO 2 and SrTiO 3 films that allow the separate tailoring of nanoscale ionic and electronic channels at high density (â 1/410 12 inch â '2). We systematically show that these devices allow precise engineering of the resistance states, thus enabling large on-off ratios and high reproducibility. The tunable structure presents an ideal platform to explore ionic and electronic mechanisms and we expect a wide potential impact also on other nascent technologies, ranging from ionic gating to micro-solid oxide fuel cells and neuromorphics.

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Metamaterials made of nanoscale inclusions or artificial unit cells exhibit exotic optical properties that do not exist in natural materials. Promising applications, such as super-resolution imaging, cloaking, hyperbolic propagation, and ultrafast phase velocities have been demonstrated based on mostly micrometer-scale metamaterials and few nanoscale metamaterials. To date, most metamaterials are created using costly and tedious fabrication techniques with limited paths toward reliable large-scale fabrication. In this work, we demonstrate the one-step direct growth of self-assembled epitaxial metal-oxide nanocomposites as a drastically different approach to fabricating large-area nanostructured metamaterials. Using pulsed laser deposition, we fabricated nanocomposite films with vertically aligned gold (Au) nanopillars (∼20 nm in diameter) embedded in various oxide matrices with high epitaxial quality. Strong, broad absorption features in the measured absorbance spectrum are clear signatures of plasmon resonances of Au nanopillars. By tuning their densities on selected substrates, anisotropic optical properties are demonstrated via angular dependent and polarization resolved reflectivity measurements and reproduced by full-wave simulations and effective medium theory. Our model predicts exotic properties, such as zero permittivity responses and topological transitions. Our studies suggest that these self-assembled metal-oxide nanostructures provide an exciting new material platform to control and enhance optical response at nanometer scales.

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Recently, it has been predicted that topological crystalline insulators (TCIs) may exist in SnTe and Pb_1-xSn_xTe thin films [1]. To date, most studies on TCIs were carried out either in bulk crystals or thin films, and no research activity has been explored in heterostructures. We present here the results on electronic transport properties of the 2D electron gas (2DEG) realized at the interfaces of PbTe/ CdTe (111) heterostructures. Evidence of topological state in this interfacial 2DEG was observed.

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A great deal of research has been carried out in oxide material systems. Among them, ZnO and La_0.7Sr_0.3MnO₃ (LSMO) are of particular interest due to their superb optical properties and colossal magneto-resistive effect. Here, we report our recent results of magneto-transport studies in self-assembled, epitaxial (ZnO)0.5:(La_0.7Sr_0.3MnO₃)_0.5 nanocomposite films.

Illumination by a narrow-band laser has been shown to enable photoelectrochemical (PEC) etching of InGaN thin films into quantum dots with sizes controlled by the laser wavelength. Here, we investigate and elucidate the influence of solution pH on such quantum-size-controlled PEC etch process. We find that although a pH above 5 is often used for PEC etching of GaN-based materials, oxides (In2O3 and/or Ga2O3) form which interfere with quantum dot formation. At pH below 3, however, oxide-free QDs with self-terminated sizes can be successfully realized.

Enhancement of oxygen ion conductivity in oxides is important for low-temperature (<500 °C) operation of solid oxide fuel cells, sensors and other ionotronic devices. While huge ion conductivity has been demonstrated in planar heterostructure films, there has been considerable debate over the origin of the conductivity enhancement, in part because of the difficulties of probing buried ion transport channels. Here we create a practical geometry for device miniaturization, consisting of highly crystalline micrometre-thick vertical nanocolumns of Sm-doped CeO2 embedded in supporting matrices of SrTiO3. The ionic conductivity is higher by one order of magnitude than plain Sm-doped CeO2 films. By using scanning probe microscopy, we show that the fast ion-conducting channels are not exclusively restricted to the interface but also are localized at the Sm-doped CeO2 nanopillars. This work offers a pathway to realize spatially localized fast ion transport in oxides of micrometre thickness.

Establishing processing-structure-property relationships for monolayer materials is crucial for a range of applications spanning optics, catalysis, electronics and energy. Presently, for molybdenum disulfide, a promising catalyst for artificial photosynthesis, considerable debate surrounds the structure/property relationships of its various allotropes. Here we unambiguously solve the structure of molybdenum disulfide monolayers using high-resolution transmission electron microscopy supported by density functional theory and show lithium intercalation to direct a preferential transformation of the basal plane from 2H (trigonal prismatic) to 1T′ (clustered Mo). These changes alter the energetics of molybdenum disulfide interactions with hydrogen (ΔG H), and, with respect to catalysis, the 1T′ transformation renders the normally inert basal plane amenable towards hydrogen adsorption and hydrogen evolution. Indeed, we show basal plane activation of 1T′ molybdenum disulfide and a lowering of ΔG H from +1.6 eV for 2H to +0.18 eV for 1T′, comparable to 2H molybdenum disulfide edges on Au(111), one of the most active hydrogen evolution catalysts known.

II-VI quantum dots, such as CdSe and CdTe, are attractive as downconversion materials for solid-state lighting, because of their narrow linewidth, tunable emission. However, for these materials to have acceptable quantum yields (QYs) requires that they be coated with a II-VI shell material whose valence band offset serves to confine the hole to the core. Confinement prevents the hole from accessing surface traps that lead to nonradiative decay of the exciton. Examples of such hole-confined core/shell QDs include CdTe/CdSe and CdSe/CdS. Unfortunately, the shell can also cause problems due to lattice mismatch, which ranges from 4-6% for systems of interest. This lattice mismatch can create significant interface energies at the heterojunction and places the core under radial compression and the shell under tangential tension. At elevated temperatures (~240°C) interfacial diffusion can relax these stresses, as can surface reconstruction, which can expose the core, creating hole traps. But such high temperatures favor the hexagonal Wurtzite structure, which has lower QY than the cubic zinc blende structure, which can be synthesized at lower temperatures, ~140°C. In the absence of alloying the core/shell structure can become metastable, or even unstable, if the shell is too thick. This can cause result in an irregular shell or even island growth. But if the shell is too thin thermallyactivated transport of the hole to surface traps can occur. In our LDRD we have developed a fundamental atomistic modeling capability, based on Stillinger-Weber and Bond-Order potentials we developed for the entire II-VI class. These pseudo-potentials have enabled us to conduct large-scale atomistic simulations that have led to the computation of phase diagrams of II-VI QDs. These phase diagrams demonstrate that at elevated temperatures the zinc blende phase of CdTe with CdSe grown on it epitaxially becomes thermodynamically unstable due to alloying. This is accompanied by a loss of hole confinement and a severe drop in the QY and emission lifetime, which is confirmed experimentally for the zinc blende core/shell QDs prepared at low temperatures. These QDs have QYs as high as 95%, which makes them very attractive for lighting. Finally, to address strain relaxation in these materials we developed a model for misfit dislocation formation that we have validated through atomistic simulations.

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Quantum oscillations are observed in the 2DEG system at the interface of novel heterostructures, PbTe/CdTe (111), with nearly identical lattice parameters (aPbTe = 0.6462 nm, aCdTe = 0.648 nm) but very different lattice structures (PbTe: rock salt, CdTe: zinc blende). The 2DEG formation mechanism, a mismatch in the bonding configurations of the valence electrons at the interface, is uniquely different from the other known 2DEG systems. The aberration-corrected scanning transmission electron microscope (AC-STEM) characterization indicates an abrupt interface without cation interdiffusion due to a large miscibility gap between the two constituent materials. Electronic transport measurements under magnetic field up to 60 T, with the observation of Landau level filling factor v = 1, unambiguously reveal a Π Berry phase, suggesting the Dirac Fermion nature of the 2DEG at the heterostructure interface, and the PbTe/CdTe heterostructure being a new candidate for 2D topological crystalline insulators.

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In this study, the use of maltodextrin supramolecular structures (MD SMS) as a reducing agent and colloidal stabilizing agent for the synthesis of Ag nanoparticles (Ag NPs) identified three key points. First, the maltodextrin (MD) solutions are effective in the formation of well-dispersed Ag NPs utilizing alkaline solution conditions, with the resulting Ag NPs ranging in size from 5 to 50 nm diameter. Second, in situ characterization by Raman spectroscopy and small angle X-ray scattering (SAXS) are consistent with initial nucleation of Ag NPs within the MD SMS up to a critical size of ca. 1 nm, followed by a transition to more rapid growth by aggregation and fusion between MD SMS, similar to micelle aggregation reactions. Third, the stabilization of larger Ag NPs by adsorbed MD SMS is similar to hemi-micelle stabilization, and monomodal size distributions are proposed to relate to integer surface coverage of the Ag NPs. Conditions were identified for preparing Ag NPs with monomodal distributions centered at 30–35 nm Ag NPs.

Lasing is demonstrated from nonpolar III-nitride core-shell multi-quantum-well nanowires. The nanowire lasers were fabricated by coupling a top-down and bottom-up methodology and achieved lasing at wavelengths below the GaN bandedge. © OSA 2015.

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We report here the characteristics of photoelectrochemical (PEC) etching of epitaxial InGaN semiconductor thin films using a narrowband laser with a linewidth less than ∼1 nm. In the initial stages of PEC etching, when the thin film is flat, characteristic voltammogram shapes are observed. At low photo-excitation rates, voltammograms are S-shaped, indicating the onset of a voltage-independent rate-limiting process associated with electron-hole-pair creation and/or annihilation. At high photo-excitation rates, voltammograms are superlinear in shape, indicating, for the voltage ranges studied here, a voltage-dependent rate-limiting process associated with surface electrochemical oxidation. As PEC etching proceeds, the thin film becomes rough at the nanoscale, and ultimately the self-limiting etch kinetics lead to an ensemble of nanoparticles. This change in InGaN film volume and morphology leads to a characteristic dependence of PEC etch rate on time: an incubation time, followed by a rise, then a peak, then a slow decay.

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Capacity loss and voltage fade upon electrochemical charge-discharge cycling observed in lithium-rich layered cathode oxides (Li[LixMnyTM1-x-y]O2, where TM = Ni, Co, or Fe) have recently been correlated with a gradual phase transformation featuring the formation of a surface reconstructed layer (SRL) that evolves from a thin (<2 nm), defect spinel layer upon the first charge to a relatively thick (∼5 nm), spinel or rock-salt layer upon continuous charge-discharge cycling. Here we report observations of an SRL and structural evolution of the SRL on the Li[Li0.2Ni0.2Mn0.6]O2 (LNMO) particles, which are identical to those reported due to the charge-discharge cycle but are a result of electron-beam irradiation during scanning transmission electron microscopy (STEM) imaging. Sensitivity of the lithium-rich layered oxides to high-energy electrons leads to the formation of a thin, defect spinel layer on surfaces of the particles upon exposure to a 200 kV electron beam for as little as 30 s under normal high-resolution STEM imaging conditions. Further electron irradiation produces a thicker layer of the spinel phase, ultimately producing a rock-salt layer at a higher electron exposure. Atomic-scale chemical mapping by energy dispersive X-ray spectroscopy in STEM indicates the electron-beam-induced SRL formation on LNMO is accomplished by migration of the transition metal ions to the Li sites without deconstruction of the lattice. This study provides insight into understanding the mechanism of forming the SRL and also possibly a means of studying structural evolution in the Li-rich layered oxides without involving electrochemistry.

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Lithiation-exfoliation produces single to few-layered MoS₂ and WS₂ sheets dispersible in water. However, the process transforms them from the pristine semiconducting 2H phase to a distorted metallic phase. Recovery of the semiconducting properties typically involves heating of the chemically exfoliated sheets at elevated temperatures. Therefore, it has been largely limited to sheets deposited on solid substrates. We report the dispersion of chemically exfoliated MoS₂ sheets in high boiling point organic solvents enabled by surface functionalization and the controllable recovery of their semiconducting properties directly in solution. Ultimately, this process connects the scalability of chemical exfoliation with the simplicity of solution processing, enabling a facile method for tuning the metal to semiconductor transitions of MoS₂ and WS₂ within a liquid medium.

Recent synthetic advances have made available very monodisperse zincblende CdSe/CdS quantum dots having near-unity photoluminescence quantum yields. Because of the absence of nonradiative decay pathways, accurate values of the radiative lifetimes can be obtained from time-resolved PL measurements. Radiative lifetimes can also be obtained from the Einstein relations, using the static absorption spectra and the relative thermal populations in the angular momentum sublevels. One of the inputs into these calculations is the shell thickness, and it is useful to be able to determine shell thickness from spectroscopic measurements. We use an empirically corrected effective mass model to produce a "map" of exciton wavelength as a function of core size and shell thickness. These calculations use an elastic continuum model and the known lattice and elastic constants to include the e ffect of lattice strain on the band gap energy. The map is in agreement with the known CdSe sizing curve and with the shell thicknesses of zincblende core/shell particles obtained from TEM images. If selenium-sulfur diffusion is included and lattice strain is omitted from the calculation then the resulting map is appropriate for wurtzite CdSe/CdS quantum dots synthesized at high temperatures, and this map is very similar to one previously reported (J. Am. Chem. Soc. 2009, 131, 14299). Radiative lifetimes determined from time-resolved measurements are compared to values obtained from the Einstein relations, and found to be in excellent agreement. For a specific core size (2.64 nm diameter, in the present case), radiative lifetimes are found to decrease with increasing shell thickness. This is similar to the size dependence of one-component CdSe quantum dots and in contrast to the size dependence in type-II quantum dots. (Graph Presented).

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We demonstrate a new route to the precision fabrication of epitaxial semiconductor nanostructures in the sub-10 nm size regime: quantum-size-controlled photoelectrochemical (QSC-PEC) etching. We show that quantum dots (QDs) can be QSC-PEC-etched from epitaxial InGaN thin films using narrowband laser photoexcitation, and that the QD sizes (and hence bandgaps and photoluminescence wavelengths) are determined by the photoexcitation wavelength. Low-temperature photoluminescence from ensembles of such QDs have peak wavelengths that can be tunably blue shifted by 35 nm (from 440 to 405 nm) and have line widths that narrow by 3 times (from 19 to 6 nm).

Controlling metallic nanoparticle (NP) interactions plays a vital role in the development of new joining techniques (nanosolder) that bond at lower processing temperatures but remain viable at higher temperatures. The pr imary objective of this project is t o develop a fundamental understanding of the actual reaction processes, associated atomic mechanisms, and the resulting microstructure that occur during thermally - driven bond formation concerning metal - metal nano - scale (%3C50nm) interfaces. In this LDRD pr oject, we have studied metallic NPs interaction at the elevated temperatures by combining in - situ transmission electron microscopy (TEM ) using an aberration - corrected scanning transmission electron microscope (AC - STEM) and atomic - scale modeling such as m olecular dynamic (MD) simulations. Various metallic NPs such as Ag, Cu and Au are synthesized by chemical routines. Numerous in - situ e xperiments were carried out with focus of the research on study of Ag - Cu system. For the first time, using in - situ STEM he ating experiments , we directly observed t he formation of a 3 - dimensional (3 - D) epitaxial Cu - Ag core - shell nanoparticle during the thermal interaction of Cu and Ag NPs at elevated temperatures (150 - 300 o C). The reaction takes place at temperatures as low as 150 o C and was only observed when care was taken to circumvent the effects of electron beam irradiation during STEM imaging. Atomic - scale modeling verified that the Cu - Ag core - shell structure is energetically favored, and indicated that this phenomenon is a nano - scale effect related to the large surface - to - volume ratio of the NPs. The observation potentially can be used for developing new nanosolder technology that uses Ag shell as the "glue" that stic ks the particles of Cu together. The LDRD has led to several journal publications and numerous conference presentations, and a TA. In addition, we have developed new TEM characterization techniques and phase - field modeling tools that can be used for future materials research at Sandia. Acknowledgeme nts This work was supported by the Laboratory Directed Research and Development (LDRD) program of Sandia National Laboratories. Sandia National Laboratories is a multi - program laboratory managed and operated by Sandia Corporation, a wholly owned subsidia ry of Lockheed Martin Corporation, for the US Department of Energy's National Nuclear Security Administration under contract DE - AC04 - 94AL85000.

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The deformation, crack nucleation, coalescence, and rupture process of pure tantalum (99.9 pct) were studied under room temperature quasistatic loading using several in situ and ex-situ techniques including optical metallography, scanning electron microscopy (SEM), electron backscatter diffraction (EBSD), and transmission-electron microscopy (TEM). The fracture surface of tantalum forms a ridge-and-valley morphology that is distinct from conventional notions of ductile dimple microvoid coalescence, and also distinct from spall damage formed during dynamic shock conditions. Failure proceeds by void nucleation at a dislocation cell wall or in subgrain interiors. Coalescence appears to involve a two-stage damage progression: first individual voids coalesce along the tensile axis forming diamond-shaped multivoid cavities; then cavities link-up by intercavity necking. Final rupture occurs when the intercavity necks thin to ~100-nm films and fail by crystallographic cleavage. This final tearing process was observed using in situ TEM tensile deformation of a thin tantalum film. The detailed microstructural and morphological observations of the current study can be used to guide the development of improved models for tearing of ductile metals. © 2013 The Author(s).

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