Publications

Abstract not provided.

Calcite (CaCO3) composition and properties are defined by the chemical environment in which CaCO3 forms. However, a complete understanding of the relationship between aqueous chemistry during calcite precipitation and resulting chemical and physical CaCO3 properties remains elusive; therefore, we present an investigation into the coupled effects of divalent cations Sr2+ and Mg2+ on CaCO3 precipitation and subsequent crystal growth. Through chemical analysis of the aqueous phases and microscopy of the resulting calcite phases in compliment with density functional theory calculations, we elucidate the relationship between crystal growth and the resulting composition (elemental and isotopic) of calcite. The results of this experimental and modeling work suggest that Mg2+ and Sr2+ have cation-specific impacts that inhibit calcite crystal growth, including: (1) Sr2+ incorporates more readily into calcite than Mg2+ (DSr > DMg), and increasing [Sr2+]t or [Mg2+]t increases DSr; (2) the inclusion of Mg2+ into structure leads to a reduction in the calcite unit cell volume, whereas Sr2+ leads to an expansion; (3) the inclusion of both Mg2+ and Sr2+ results in a distribution of unit cell impacts based on the relative positions of the Sr2+ and Mg2+ in the lattice. These experiments were conducted at saturation indices of CaCO3 of ∼4.1, favoring rapid precipitation. This rapid precipitation resulted in observed Sr isotope fractionation confirming Sr isotopic fractionation is dependent upon the precipitation rate. We further note that the precipitation and growth of calcite favors the incorporation of the lighter 86Sr isotope over the heavier 87Sr isotope, regardless of the initial solution conditions, and the degree of fractionation increases with DSr. In sum, these results demonstrate the impact of solution environment to influence the incorporation behavior and crystal growth behavior of calcite. These factors are important to understand in order to effectively use geochemical signatures resulting from calcite precipitation or dissolution to gain specific information.

Abstract not provided.

VO2 has shown great promise for sensors, smart windows, and energy storage devices, because of its drastic semiconductor-to-metal transition (SMT) near 340 K coupled with a structural transition. To push its application toward room-temperature, effective transition temperature (Tc) tuning in VO2 is desired. In this study, tailorable SMT characteristics in VO2 films have been achieved by the electrochemical intercalation of foreign ions (e.g., Li ions). By controlling the relative potential with respect to Li/Li+ during the intercalation process, Tc of VO2 can be effectively and systematically tuned in the window from 326.7 to 340.8 K. The effective Tc tuning could be attributed to the observed strain and lattice distortion and the change of the charge carrier density in VO2 introduced by the intercalation process. This demonstration opens up a new approach in tuning the VO2 phase transition toward room-temperature device applications and enables future real-time phase change property tuning.

Transition metal nitrides (e.g., TiN) have shown tremendous promise in optical metamaterials for nanophotonic devices due to their plasmonic properties comparable to noble metals and superior high temperature stability. Vertically aligned nanocomposites (VANs) offer a great platform for combining two dissimilar functional materials with a one-step deposition technique toward multifunctionality integration and strong structural/property anisotropy. Here, we report a two-phase nanocomposite design combining ferromagnetic CoFe₂ nanosheets in the plasmonic TiN matrix as a new hybrid plasmonic metamaterial. The hybrid metamaterials exhibit anisotropic optical and magnetic responses, as well as a pronounced magneto-optical coupling response evidenced by Magneto-optic Kerr Effect measurement, owing to the novel vertically aligned structure. This work demonstrates a new TiN-based metamaterial with anisotropic properties and multifunctionality toward light polarization modulation, optical switching, and integrated optics.

Two-dimensional (2D) layered oxides have recently attracted wide attention owing to the strong coupling among charges, spins, lattice, and strain, which allows great flexibility and opportunities in structure designs as well as multifunctionality exploration. In parallel, plasmonic hybrid nanostructures exhibit exotic localized surface plasmon resonance (LSPR) providing a broad range of applications in nanophotonic devices and sensors. A hybrid material platform combining the unique multifunctional 2D layered oxides and plasmonic nanostructures brings optical tuning into the new level. In this work, a novel self-assembled Bi2MoO6 (BMO) 2D layered oxide incorporated with plasmonic Au nanoinclusions has been demonstrated via one-step pulsed laser deposition (PLD) technique. Comprehensive microstructural characterizations, including scanning transmission electron microscopy (STEM), differential phase contrast imaging (DPC), and STEM tomography, have demonstrated the high epitaxial quality and particle-in-matrix morphology of the BMO-Au nanocomposite film. DPC-STEM imaging clarifies the magnetic domain structures of BMO matrix. Three different BMO structures including layered supercell (LSC) and superlattices have been revealed which is attributed to the variable strain states throughout the BMO-Au film. Owing to the combination of plasmonic Au and layered structure of BMO, the nanocomposite film exhibits a typical LSPR in visible wavelength region and strong anisotropy in terms of its optical and ferromagnetic properties. This study opens a new avenue for developing novel 2D layered complex oxides incorporated with plasmonic metal or semiconductor phases showing great potential for applications in multifunctional nanoelectronics devices. [Figure not available: see fulltext.]

The recent discovery of bright, room-temperature, single photon emitters in GaN leads to an appealing alternative to diamond best single photon emitters given the widespread use and technological maturity of III-nitrides for optoelectronics (e.g. blue LEDs, lasers) and high-speed, high-power electronics. This discovery opens the door to on-chip and on-demand single photon sources integrated with detectors and electronics. Currently, little is known about the underlying defect structure nor is there a sense of how such an emitter might be controllably created. A detailed understanding of the origin of the SPEs in GaN and a path to deterministically introduce them is required. In this project, we develop new experimental capabilities to then investigate single photon emission from GaN nanowires and both GAN and AlN wafers. We ion implant our wafers with the ion implanted with our focused ion beam nanoimplantation capabilities at Sandia, to go beyond typical broad beam implantation and create single photon emitting defects with nanometer precision. We've created light emitting sources using Li⁺ and He⁺, but single photon emission has yet to be demonstrated. In parallel, we calculate the energy levels of defects and transition metal substitutions in GaN to gain a better understanding of the sources of single photon emission in GaN and AlN. The combined experimental and theoretical capabilities developed throughout this project will enable further investigation into the origins of single photon emission from defects in GaN, AlN, and other wide bandgap semiconductors.

Abstract not provided.

Hole spins in Ge quantum wells have shown success in both spintronic and quantum applications, thereby increasing the demand for high-quality material. We performed material analysis and device characterization of commercially grown shallow and undoped Ge/SiGe quantum well heterostructures on 8-in. (100) Si wafers. Material analysis reveals the high crystalline quality, sharp interfaces, and uniformity of the material. We demonstrate a high mobility (1.7 × 105cm2V-1s-1) 2D hole gas in a device with a conduction threshold density of 9.2 × 1010cm-2. We study the use of surface preparation as a tool to control barrier thickness, density, mobility, and interface trap density. We report interface trap densities of 6 × 1012eV-1. Our results validate the material's high quality and show that further investigation into improving device performance is needed. We conclude that surface preparations which include weak Ge etchants, such as dilute H2O2, can be used for postgrowth control of quantum well depth in Ge-rich SiGe while still providing a relatively smooth oxide-semiconductor interface. Our results show that interface state density is mostly independent of our surface preparations, thereby implying that a Si cap layer is not necessary for device performance. Transport in our devices is instead limited by the quantum well depth. Commercially sourced Ge/SiGe, such as studied here, will provide accessibility for future investigations.

Abstract not provided.

Ferroelectric HfO2-based materials hold great potential for the widespread integration of ferroelectricity into modern electronics due to their compatibility with existing Si technology. Earlier work indicated that a nanometre grain size was crucial for the stabilization of the ferroelectric phase. This constraint, associated with a high density of structural defects, obscures an insight into the intrinsic ferroelectricity of HfO2-based materials. Here we demonstrate that stable and enhanced polarization can be achieved in epitaxial HfO2 films with a high degree of structural order (crystallinity). An out-of-plane polarization value of 50 μC cm–2 has been observed at room temperature in Y-doped HfO2(111) epitaxial thin films, with an estimated full value of intrinsic polarization of 64 μC cm–2, which is in close agreement with density functional theory calculations. The crystal structure of films reveals the Pca21 orthorhombic phase with small rhombohedral distortion, underlining the role of the structural constraint in stabilizing the ferroelectric phase. Our results suggest that it could be possible to exploit the intrinsic ferroelectricity of HfO2-based materials, optimizing their performance in device applications.

The selective amorphization of SiGe in Si/SiGe nanostructures via a 1 MeV Si+ implant was investigated, resulting in single-crystal Si nanowires (NWs) and quantum dots (QDs) encapsulated in amorphous SiGe fins and pillars, respectively. The Si NWs and QDs are formed during high-temperature dry oxidation of single-crystal Si/SiGe heterostructure fins and pillars, during which Ge diffuses along the nanostructure sidewalls and encapsulates the Si layers. The fins and pillars were then subjected to a 3 × 1015 ions/cm2 1 MeV Si+ implant, resulting in the amorphization of SiGe, while leaving the encapsulated Si crystalline for larger, 65-nm wide NWs and QDs. Interestingly, the 26-nm diameter Si QDs amorphize, while the 28-nm wide NWs remain crystalline during the same high energy ion implant. This result suggests that the Si/SiGe pillars have a lower threshold for Si-induced amorphization compared to their Si/SiGe fin counterparts. However, Monte Carlo simulations of ion implantation into the Si/SiGe nanostructures reveal similar predicted levels of displacements per cm3. Molecular dynamics simulations suggest that the total stress magnitude in Si QDs encapsulated in crystalline SiGe is higher than the total stress magnitude in Si NWs, which may lead to greater crystalline instability in the QDs during ion implant. The potential lower amorphization threshold of QDs compared to NWs is of special importance to applications that require robust QD devices in a variety of radiation environments.

Abstract not provided.

Multiferroic materials are an interesting functional material family combining two ferroic orderings, e.g., ferroelectric and ferromagnetic orderings, or ferroelectric and antiferromagnetic orderings, and find various device applications, such as spintronics, multiferroic tunnel junctions, etc. Coupling multiferroic materials with plasmonic nanostructures offers great potential for optical-based switching in these devices. Here, we report a novel nanocomposite system consisting of layered Bi1.25AlMnO3.25 (BAMO) as a multiferroic matrix and well dispersed plasmonic Au nanoparticles (NPs) and demonstrate that the Au nanoparticle morphology and the nanocomposite properties can be effectively tuned. Specifically, the Au particle size can be tuned from 6.82 nm to 31.59 nm and the 6.82 nm one presents the optimum ferroelectric and ferromagnetic properties and plasmonic properties. Besides the room temperature multiferroic properties, the BAMO-Au nanocomposite system presents other unique functionalities including localized surface plasmon resonance (LSPR), hyperbolicity in the visible region, and magneto-optical coupling, which can all be effectively tailored through morphology tuning. This study demonstrates the feasibility of coupling single phase multiferroic oxides with plasmonic metals for complex nanocomposite designs towards optically switchable spintronics and other memory devices.

Abstract not provided.

Metals subjected to irradiation environments undergo microstructural evolution and concomitant degradation, yet the nanoscale mechanisms for such evolution remain elusive. Here, we combine in situ heavy ion irradiation, atomic resolution microscopy, and atomistic simulation to elucidate how radiation damage and interfacial defects interplay to control grain boundary (GB) motion. While classical notions of boundary evolution under irradiation rest on simple ideas of curvature-driven motion, the reality is far more complex. Focusing on an ion-irradiated Pt Σ3 GB, we show how this boundary evolves by the motion of 120° facet junctions separating nanoscale {112} facets. Our analysis considers the short- and mid-range ion interactions, which roughen the facets and induce local motion, and longer-range interactions associated with interfacial disconnections, which accommodate the intergranular misorientation. We suggest how climb of these disconnections could drive coordinated facet junction motion. These findings emphasize that both local and longer-range, collective interactions are important to understanding irradiation-induced interfacial evolution.

Abstract not provided.

This work investigates the role of water and oxygen on the shear-induced structural modifications of molybdenum disulfide (MoS2) coatings for space applications and the impact on friction due to oxidation from aging. We observed from transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS) that sliding in both an inert environment (i.e., dry N2) or humid lab air forms basally oriented (002) running films of varying thickness and structure. Tribological testing of the basally oriented surfaces created in dry N2 and air showed lower initial friction than a coating with an amorphous or nanocrystalline microstructure. Aging of coatings with basally oriented surfaces was performed by heating samples at 250 °C for 24 h. Post aging tribological testing of the as-deposited coating showed increased initial friction and a longer transition from higher friction to lower friction (i.e., run-in) due to oxidation of the surface. Tribological testing of raster patches formed in dry N2 and air both showed an improved resistance to oxidation and reduced initial friction after aging. The results from this study have implications for the use of MoS2-coated mechanisms in aerospace and space applications and highlight the importance of preflight testing. Preflight cycling of components in inert or air environments provides an oriented surface microstructure with fewer interaction sites for oxidation and a lower shear strength, reducing the initial friction coefficient and oxidation due to aging or exposure to reactive species (i.e., atomic oxygen).

Structural disorder causes materials' surface electronic properties, e.g., work function (φ), to vary spatially, yet it is challenging to prove exact causal relationships to underlying ensemble disorder, e.g., roughness or granularity. For polycrystalline Pt, nanoscale resolution photoemission threshold mapping reveals a spatially varying φ = 5.70 ± 0.03 eV over a distribution of (111) vicinal grain surfaces prepared by sputter deposition and annealing. With regard to field emission and related phenomena, e.g., vacuum arc initiation, a salient feature of the φ distribution is that it is skewed with a long tail to values down to 5.4 eV, i.e., far below the mean, which is exponentially impactful to field emission via the Fowler-Nordheim relation. We show that the φ spatial variation and distribution can be explained by ensemble variations of granular tilts and surface slopes via a Smoluchowski smoothing model wherein local φ variations result from spatially varying densities of electric dipole moments, intrinsic to atomic steps, that locally modify φ. Atomic step-terrace structure is confirmed with scanning tunneling microscopy (STM) at several locations on our surfaces, and prior works showed STM evidence for atomic step dipoles at various metal surfaces. From our model, we find an atomic step edge dipole μ = 0.12 D/edge atom, which is comparable to values reported in studies that utilized other methods and materials. Our results elucidate a connection between macroscopic φ and the nanostructure that may contribute to the spread of reported φ for Pt and other surfaces and may be useful toward more complete descriptions of polycrystalline metals in the models of field emission and other related vacuum electronics phenomena, e.g., arc initiation.

Abstract not provided.

A combination of electrodeposition and thermal reduction methods have been utilized for the synthesis of ligand-free FeNiCo alloy nanoparticles through a high-entropy oxide intermediate. These phases are of great interest to the electrocatalysis community, especially when formed by a sustainable chemistry method. This is successfully achieved by first forming a complex five element amorphous FeNiCoCrMn high-entropy oxide (HEO) phase via electrodeposition from a nanodroplet emulsion solution of the metal salt reactants. The amorphous oxide phase is then thermally treated and reduced at 570-600 °C to form the crystalline FeNiCo alloy with a separate CrMnOx cophase. The FeNiCo alloy is fully characterized by scanning transmission electron microscopy and energy-dispersive X-ray spectroscopy elemental analysis and is identified as a face-centered cubic crystal with the lattice constant a = 3.52 Å. The unoptimized, ligand-free FeNiCo NPs activity toward the oxygen evolution reaction is evaluated in alkaline solution and found to have an ∼185 mV more cathodic onset potential than the Pt metal. Beyond being able to synthesize highly crystalline, ligand-free FeNiCo nanoparticles, the demonstrated and relatively simple two-step process is ideal for the synthesis of tailor-made nanoparticles where the desired composition is not easily achieved with classical solution-based chemistries.

Abstract not provided.

The controlled fabrication of vertical, tapered, and high-aspect ratio GaN nanowires via a two-step top-down process consisting of an inductively coupled plasma reactive ion etch followed by a hot, 85% H3PO4 crystallographic wet etch is explored. The vertical nanowires are oriented in the [0001] direction and are bound by sidewalls comprising of 3362 ¯ } semipolar planes which are at a 12° angle from the [0001] axis. High temperature H3PO4 etching between 60 °C and 95 °C result in smooth semipolar faceting with no visible micro-faceting, whereas a 50 °C etch reveals a micro-faceted etch evolution. High-angle annular dark-field scanning transmission electron microscopy imaging confirms nanowire tip dimensions down to 8–12 nanometers. The activation energy associated with the etch process is 0.90 ± 0.09 eV, which is consistent with a reaction-rate limited dissolution process. The exposure of the 3362 ¯ } type planes is consistent with etching barrier index calculations. The field emission properties of the nanowires were investigated via a nanoprobe in a scanning electron microscope as well as by a vacuum field emission electron microscope. The measurements show a gap size dependent turn-on voltage, with a maximum current of 33 nA and turn-on field of 1.92 V nm−1 for a 50 nm gap, and uniform emission across the array.

Combining plasmonic and magnetic properties, namely magneto-plasmonic coupling, inspires great research interest and the search for magneto-plasmonic nanostructure becomes considerably critical. Here we designed a nanopillar-in-matrix structure with core–shell alloyed nanopillars for both BaTiO3 (BTO)-Au0.5Co0.5 (AuCo) and BTO-Au0.25Cu0.25Co0.25Ni0.25 (AuCuCoNi) hybrid systems, i.e., ferromagnetic alloy cores (e.g., Co or CoNi) with plasmonic shells (e.g., Au or Au/Cu). These core–shell alloy nanopillars are uniformly embedded into a dielectric BTO matrix to form a vertically aligned nanocomposite (VAN) structure. Both hybrid systems present excellent epitaxial quality and interesting multi-functionality, e.g., high magnetic anisotropy, magneto-optical coupling response, tailorable plasmonic resonance wavelength, tunable hyperbolic properties and strong optical anisotropy. These alloyed nanopillars-in-matrix designs provide enormous potential for complex hybrid material designs with multi-functionality and demonstrate strong interface enabled magneto-plasmonic coupling along with plasmonic and magnetic performance.

Two-dimensional (2D) materials with robust ferromagnetic behavior have attracted great interest because of their potential applications in next-generation nanoelectronic devices. Aside from graphene and transition metal dichalcogenides, Bi-based layered oxide materials are a group of prospective candidates due to their superior room-temperature multiferroic response. Here, an ultrathin Bi3Fe2Mn2O10+δ layered supercell (BFMO322 LS) structure was deposited on an LaAlO3 (LAO) (001) substrate using pulsed laser deposition. Microstructural analysis suggests that a layered supercell (LS) structure consisting of two-layer-thick Bi-O slabs and two-layer-thick Mn/Fe-O octahedra slabs was formed on top of the pseudo-perovskite interlayer (IL). A robust saturation magnetization value of 129 and 96 emu cm-3 is achieved in a 12.3 nm thick film in the in-plane (IP) and out-of-plane (OP) directions, respectively. The ferromagnetism, dielectric permittivity, and optical bandgap of the ultrathin BFMO films can be effectively tuned by thickness and morphology variation. In addition, the anisotropy of all ultrathin BFMO films switches from OP dominating to IP dominating as the thickness increases. This study demonstrates the ultrathin BFMO film with tunable multifunctionalities as a promising candidate for novel integrated spintronic devices. This journal is