This project’s goal was to explore new methods and tools to evaluate the focused ion beam (FIB) effect on active electrical devices, which is becoming increasingly challenged by the continual decrease in transistor geometry. Novel hole transfer methods leveraging FIB patterning were demonstrated utilizing selective area atomic layer deposition (ALD) and metal assisted chemical etching. A FIB damage electrical tester device was fabricated, and the effects of FIB beams were characterized by examining change in performance of damaged transistors. Detailed characterization of end-of-range damage for common FIB ions were correlated to modeling methods. Finally, undamaged and damaged devices were simulated by Charon to begin understanding the FIB effects on active devices. This test platform along with modeling methods give a powerful way to assess FIB damage in materials and devices, and with more development can help establish methods to predict FIB damage effects on electrical devices.
We compare the suitability of various magnesium-based liquid metal alloy ion sources (LMAISs) for scalable focused-ion-beam (FIB) implantation doping of GaN. We consider GaMg, MgSO4●7H2O, MgZn, AlMg, and AuMgSi alloys. Although issues of oxidation (GaMg), decomposition (MgSO4●7H2O), and excessive vapor pressure (MgZn and AlMg) were encountered, the AuMgSi alloy LMAIS operating in a Wien-filtered FIB column emits all Mg isotopes in singly and doubly charged ionization states. We discuss the operating conditions to achieve <20 nm spot size Mg FIB implantation and present Mg depth profile data from time-of-flight secondary ion mass spectrometry. We also provide insight into implantation damage and recovery based on cathodoluminescence spectroscopy before and after rapid thermal processing. Prospects for incorporating the Mg LMAIS into high-power electronic device fabrication are also discussed.
We present optoelectronic characterization of ntype silicon pixels with a suite of plasmonic designs intended to generate and detect electron-hole pairs from incident 1550 nm photons.
Focused ion beam implantation is ideally suited for placing defect centers in wide bandgap semiconductors with nanometer spatial resolution. However, the fact that only a few percent of implanted defects can be activated to become efficient single photon emitters prevents this powerful capability to reach its full potential in photonic/electronic integration of quantum defects. Here an industry adaptive scalable technique is demonstrated to deterministically create single defects in commercial grade silicon carbide by performing repeated low ion number implantation and in situ photoluminescence evaluation after each round of implantation. An array of 9 single defects in 13 targeted locations is successfully created—a ≈70% yield which is more than an order of magnitude higher than achieved in a typical single pass ion implantation. The remaining emitters exhibit non-classical photon emission statistics corresponding to the existence of at most two emitters. This approach can be further integrated with other advanced techniques such as in situ annealing and cryogenic operations to extend to other material platforms for various quantum information technologies.
The recently-developed ability to control phosphorous-doping of silicon at an atomic level using scanning tunneling microscopy, a technique known as atomic precision advanced manufacturing (APAM), has allowed us to tailor electronic devices with atomic precision, and thus has emerged as a way to explore new possibilities in Si electronics. In these applications, critical questions include where current flow is actually occurring in or near APAM structures as well as whether leakage currents are present. In general, detection and mapping of current flow in APAM structures are valuable diagnostic tools to obtain reliable devices in digital-enhanced applications. In this paper, we used nitrogen-vacancy (NV) centers in diamond for wide-field magnetic imaging (with a few-mm field of view and micron-scale resolution) of magnetic fields from surface currents flowing in an APAM test device made of a P delta-doped layer on a Si substrate, a standard APAM witness material. We integrated a diamond having a surface NV ensemble with the device (patterned in two parallel mm-sized ribbons), then mapped the magnetic field from the DC current injected in the APAM device in a home-built NV wide-field microscope. The 2D magnetic field maps were used to reconstruct the surface current densities, allowing us to obtain information on current paths, device failures such as choke points where current flow is impeded, and current leakages outside the APAM-defined P-doped regions. Analysis on the current density reconstructed map showed a projected sensitivity of ∼0.03 A m−1, corresponding to a smallest-detectable current in the 200 μm wide APAM ribbon of ∼6 μA. These results demonstrate the failure analysis capability of NV wide-field magnetometry for APAM materials, opening the possibility to investigate other cutting-edge microelectronic devices.
The recent discovery of bright, room-temperature, single photon emitters in GaN leads to an appealing alternative to diamond best single photon emitters given the widespread use and technological maturity of III-nitrides for optoelectronics (e.g. blue LEDs, lasers) and high-speed, high-power electronics. This discovery opens the door to on-chip and on-demand single photon sources integrated with detectors and electronics. Currently, little is known about the underlying defect structure nor is there a sense of how such an emitter might be controllably created. A detailed understanding of the origin of the SPEs in GaN and a path to deterministically introduce them is required. In this project, we develop new experimental capabilities to then investigate single photon emission from GaN nanowires and both GAN and AlN wafers. We ion implant our wafers with the ion implanted with our focused ion beam nanoimplantation capabilities at Sandia, to go beyond typical broad beam implantation and create single photon emitting defects with nanometer precision. We've created light emitting sources using Li+ and He+, but single photon emission has yet to be demonstrated. In parallel, we calculate the energy levels of defects and transition metal substitutions in GaN to gain a better understanding of the sources of single photon emission in GaN and AlN. The combined experimental and theoretical capabilities developed throughout this project will enable further investigation into the origins of single photon emission from defects in GaN, AlN, and other wide bandgap semiconductors.
