Publications

Abstract not provided.

Hole spins in Ge quantum wells have shown success in both spintronic and quantum applications, thereby increasing the demand for high-quality material. We performed material analysis and device characterization of commercially grown shallow and undoped Ge/SiGe quantum well heterostructures on 8-in. (100) Si wafers. Material analysis reveals the high crystalline quality, sharp interfaces, and uniformity of the material. We demonstrate a high mobility (1.7 × 105cm2V-1s-1) 2D hole gas in a device with a conduction threshold density of 9.2 × 1010cm-2. We study the use of surface preparation as a tool to control barrier thickness, density, mobility, and interface trap density. We report interface trap densities of 6 × 1012eV-1. Our results validate the material's high quality and show that further investigation into improving device performance is needed. We conclude that surface preparations which include weak Ge etchants, such as dilute H2O2, can be used for postgrowth control of quantum well depth in Ge-rich SiGe while still providing a relatively smooth oxide-semiconductor interface. Our results show that interface state density is mostly independent of our surface preparations, thereby implying that a Si cap layer is not necessary for device performance. Transport in our devices is instead limited by the quantum well depth. Commercially sourced Ge/SiGe, such as studied here, will provide accessibility for future investigations.

The nuclear spins of low-density implanted Ga atoms in Ge are interesting candidates for solid state-based qubits. To date, activation studies of implanted Ga in Ge have focused on high densities. Here, we extend activation studies into the low-density regime. We use spreading resistance profiling and secondary ion mass spectrometry to derive electrical activation of Ga ions implanted into Ge as a function of the rapid thermal anneal temperature and implant density. We show that for our implant conditions, the activation is best for anneal temperatures between 400 and 650 °C with a maximum activation of 69% at the highest fluence. Below 400 °C, remaining implant damage results in defects that act as superfluous carriers, and above 650 °C, surface roughening and loss of Ga ions are observed. The activation increased monotonically from 10% to 69% as the implant fluence increased from 6 × 10 10 to 6 × 10 12 cm-2. The results provide thermal anneal conditions to be used for initial studies of using low-density Ga atoms in Ge as nuclear spin qubits.

Hole spin qubits confined to lithographically - defined lateral quantum dots in Ge/SiGe heterostructures show great promise. On reason for this is the intrinsic spin - orbit coupling that allows all - electric control of the qubit. That same feature can be exploited as a coupling mechanism to coherently link spin qubits to a photon field in a superconducting resonator, which could, in principle, be used as a quantum bus to distribute quantum information. The work reported here advances the knowledge and technology required for such a demonstration. We discuss the device fabrication and characterization of different quantum dot designs and the demonstration of single hole occupation in multiple devices. Superconductor resonators fabricated using an outside vendor were found to have adequate performance and a path toward flip-chip integration with quantum devices is discussed. The results of an optical study exploring aspects of using implanted Ga as quantum memory in a Ge system are presented.

Abstract not provided.

Abstract not provided.

Here we present the development of the building blocks of a Josephson parametric amplifier (JPA), namely the superconducting quantum interference device (SQUID) and the inductive pick-up coil that permits current coupling from a quantum dot into the SQUID. We also discuss our efforts in making depletion mode quantum dots using delta doped GaAs quantum wells. Because quantum dot based spin qubits utilize very low-level (~10 - 100pA), short duration (1ms - 1μs) current signals for state preparation and readout, these systems require close proximity cryogenic amplification to prevent signal corruption. Common amplification methods in these semiconductor quantum dots rely on heterojunction bipolar transistors (HBTs) and high electron mobility transistors (HEMTs) to amplify the readout signal from a single qubit. The state of the art for HBTs and HEMTs produce approximately 10µW of power when operating at high bandwidths. For few-qubit systems this level of heat dissipation is acceptable. However, for scaling up the number of qubits to several hundred or a thousand, the heat load produced in a 1 to 1 amplifier to qubit arrangement would overload the cooling capacity of a common dilution refrigerator, which typically has a cooling power of ~100µW at its base temperature. Josephson parametric amplifiers have been shown to dissipate ~1pW of power with current sensitivies on par with HBTs and HEMTs and with bandwidths 30 times that of HBTs and HEMTs, making them attractive for multi-qubit platforms. In this report we describe in detail the fabrication process flow for developing inductive pick-up coils and the fabrication and measurement of NbTiN and A1/A1Ox/A1 SQUIDs.