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Anomalously large resistance at the charge neutrality point in a zero-gap InAs/GaSb bilayer

New Journal of Physics

Yu, Wenlong; Clerico, V.; Fuentevilla, C.H.; Shi, X.; Jiang, Y.; Saha, D.; Lou, W.K.; Chang, K.; Huang, D.H.; Gumbs, G.; Smirnov, D.; Stanton, C.J.; Jiang, Z.; Bellani, V.; Meziani, Y.; Diez, E.; Pan, Wei P.; Hawkins, Samuel D.; Klem, John F.

We report here our recent electron transport results in spatially separated two-dimensional electron and hole gases with nominally degenerate energy subbands, realized in an InAs(10 nm)/GaSb(5 nm) coupled quantum well. We observe a narrow and intense maximum (∼500 kΩ) in the four-terminal resistivity in the charge neutrality region, separating the electron-like and hole-like regimes, with a strong activated temperature dependence above T = 7 K and perfect stability against quantizing magnetic fields. We discuss several mechanisms for that unexpectedly large resistance in this zero-gap semi-metal system including the formation of an excitonic insulator state.

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Strong Photothermoelectric Response and Contact Reactivity of the Dirac Semimetal ZrTe5

ACS Applied Materials and Interfaces

Leonard, Francois L.; Yu, Wenlong; Celio, Kimberlee C.; Medlin, Douglas L.; Sugar, Joshua D.; Talin, A.A.; Pan, Wei P.

The family of three-dimensional topological insulators opens new avenues to discover novel photophysics and to develop novel types of photodetectors. ZrTe5 has been shown to be a Dirac semimetal possessing unique topological, electronic, and optical properties. Here, we present spatially resolved photocurrent measurements on devices made of nanoplatelets of ZrTe5, demonstrating the photothermoelectric origin of the photoresponse. Because of the high electrical conductivity and good Seebeck coefficient, we obtain noise-equivalent powers as low as 42 pW/Hz1/2, at room temperature for visible light illumination, at zero bias. We also show that these devices suffer from significant ambient reactivity, such as the formation of a Te-rich surface region driven by Zr oxidation as well as severe reactions with the metal contacts. This reactivity results in significant stresses in the devices, leading to unusual geometries that are useful for gaining insight into the photocurrent mechanisms. Our results indicate that both the large photothermoelectric response and reactivity must be considered when designing or interpreting photocurrent measurements in these systems.

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Tilted magnetic field study of ZrTe5

Yu, Wenlong; Jiang, Y.; Yang, J.; Dun, Zhiling; Zhou, H.D.; Jiang, Z.; Lu, Ping L.; Pan, Wei P.

ZrTe5, a topological semimetal, has recently attracted great attention due to its extraordinary electronic properties. Extensive studies have been carried out in ZrTe5 on their charge transport properties. However, there are few studies on their spin properties. One well-developed technique to study spin degeneracy of a Landau level (LL) in a two-dimensional system is by tilting magnetic field. It is known that the Landau level energy is proportional to the magnetic field normal component while the Zeeman energy scales with the total magnetic field. Therefore, these two energy scales can be tuned relatively to each other in a tilted magnetic field.

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Quantum Oscillations at Integer and Fractional Landau Level Indices in Single-Crystalline ZrTe5

Scientific Reports

Yu, Wenlong; Jiang, Y.; Yang, J.; Dun, Z.L.; Zhou, H.D.; Jiang, Z.; Lu, Ping L.; Pan, Wei P.

A three-dimensional (3D) Dirac semimetal (DS) is an analogue of graphene, but with linear energy dispersion in all (three) momentum directions. 3D DSs have been a fertile playground in discovering novel quantum particles, for example Weyl fermions, in solid state systems. Many 3D DSs were theoretically predicted and experimentally confirmed. We report here the results in exfoliated ZrTe 5 thin flakes from the studies of aberration-corrected scanning transmission electron microscopy and low temperature magneto-transport measurements. Several unique results were observed. First, a π Berry phase was obtained from the Landau fan diagram of the Shubnikov-de Haas oscillations in the longitudinal conductivity σxx. Second, the longitudinal resistivity ρxx shows a linear magnetic field dependence in the quantum limit regime. Most surprisingly, quantum oscillations were also observed at fractional Landau level indices N = 5/3 and 7/5, demonstrating strong electron-electron interaction effects in ZrTe5.

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McMillan-Rowell like oscillations in a superconductor-InAs/GaSb-superconductor junction

Applied Physics Letters

Shi, Xiaoyan S.; Yu, Wenlong; Hawkins, Samuel D.; Klem, John F.; Pan, Wei P.

We have fabricated a superconductor (Ta)-InAs/GaSb bilayer-superconductor (Ta) junction device that has a long mean free path and can preserve the wavelike properties of particles (electrons and holes) inside the junction. Differential conductance measurements were carried out at low temperatures in this device, and McMillan-Rowell like oscillations (MROs) were observed. Surprisingly, a much larger Fermi velocity, compared to that from Shubnikov-de Haas oscillations, was obtained from the frequency of MROs. Possible mechanisms are discussed for this discrepancy.

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13 Results
13 Results