Metal hydrides are important across diverse applications, such as hydrogen storage, batteries, gas sensors, nuclear reactions, and high-temperature superconductivity. Previous computational studies of metal hydrides under extreme pressures, e.g., O(102)GPa, usually treat them as stoichiometric compounds without considering interstitial lattice disorder. As pressures become more moderate in the O(100)GPa and below range, hydrogen disorder at interstitial lattice sites becomes prominent, e.g., in the N-doped Lu hydride that was recently claimed superconducting near 1 GPa. Further adding compositional complexity from alloying and/or multielement interstitial occupation makes elucidating pressure- and temperature-dependent observables intractable by first-principles calculations alone. We therefore propose a lattice graph neural-network surrogate modeling approach to predict configuration- and pressure-dependent equation-of-state properties. Their efficiency permits Monte Carlo simulations to calculate Gibbs energies and pressure-dependent phase diagrams, thereby revealing insights into the synthesis conditions required for achieving desired phase equilibria. We demonstrate this concept for the compositionally complex cubic Lu(H,N,Va)3 system where three constituents (hydrogen, nitrogen and vacancy) have disordered multielement interstitial occupancies and insights into pressure-dependent phase equilibria are critically needed, e.g., N-doping levels can significantly lower dehydrogenation temperatures and provide a new strategy to optimize hydrogen-storage alloys. This work can improve the thermodynamic understanding of the Lu-H-N system and help rational synthesis of N-doped Lu hydrides, but more generally demonstrates an efficient approach to model pressure-dependent thermodynamics of multicomponent solid solutions.
An increasing magnetic field perpendicular to an undoped semiconductor surface at low temperature is known to strengthen the binding of localized electrons to stationary ions, as the wavefunction's tails evolve from exponential to Gaussian. It is also known that application of a high bias voltage to a depleted semiconductor can liberate bound charge and induce a large drop in electrical resistance. We connect these established results to experimental electrical transport measurements on off-state germanium Schottky-barrier metal-oxide-semiconductor field-effect transistor (MOSFETs) with an aluminum oxide insulating dielectric and platinum germanide contacts. We make measurements at the three distinct orientations of the magnetic field with respect to the substrate and the current. At 6 K, we observe sharp attenuation of current by more than 2 orders of magnitude, within 60 mT, at a crossover magnetic field perpendicular to the substrate. A 1 T magnetic field attenuates the current by more than 4 orders of magnitude. The strength of the attenuation and the value of the crossover field are controlled by both the gate-source and drain-source voltages. The attenuation is much weaker when the magnetic field is parallel to the current. Finally, we orient the magnetic field parallel to the substrate, but perpendicular to the current, allowing us to distinguish charge hopping at the oxide interface from charge hopping in the bulk. This large off-state magnetoresistance can be exploited for cryogenic magnetic- and photo-detection, and for high-bias, low-leakage MOSFETs.
Granular metals (GMs), consisting of metal nanoparticles separated by an insulating matrix, frequently serve as a platform for fundamental electron transport studies. However, few technologically mature devices incorporating GMs have been realized, in large part because intrinsic defects (e.g., electron trapping sites and metal/insulator interfacial defects) frequently impede electron transport, particularly in GMs that do not contain noble metals. Here, we demonstrate that such defects can be minimized in molybdenum-silicon nitride (Mo-SiNx) GMs via optimization of the sputter deposition atmosphere. For Mo-SiNx GMs deposited in a mixed Ar/N2 environment, x-ray photoemission spectroscopy shows a 40%-60% reduction of interfacial Mo-silicide defects compared to Mo-SiNx GMs sputtered in a pure Ar environment. Electron transport measurements confirm the reduced defect density; the dc conductivity improved (decreased) by 104-105 and the activation energy for variable-range hopping increased 10×. Since GMs are disordered materials, the GM nanostructure should, theoretically, support a universal power law (UPL) response; in practice, that response is generally overwhelmed by resistive (defective) transport. Here, the defect-minimized Mo-SiNx GMs display a superlinear UPL response, which we quantify as the ratio of the conductivity at 1 MHz to that at dc, Δ σ ω . Remarkably, these GMs display a Δ σ ω up to 107, a three-orders-of-magnitude improved response than previously reported for GMs. By enabling high-performance electric transport with a non-noble metal GM, this work represents an important step toward both new fundamental UPL research and scalable, mature GM device applications.
Skyrmions and antiskyrmions are nanoscale swirling textures of magnetic moments formed by chiral interactions between atomic spins in magnetic noncentrosymmetric materials and multilayer films with broken inversion symmetry. These quasiparticles are of interest for use as information carriers in next-generation, low-energy spintronic applications. To develop skyrmion-based memory and logic, we must understand skyrmion-defect interactions with two main goals—determining how skyrmions navigate intrinsic material defects and determining how to engineer disorder for optimal device operation. Here, we introduce a tunable means of creating a skyrmion-antiskyrmion system by engineering the disorder landscape in FeGe using ion irradiation. Specifically, we irradiate epitaxial B20-phase FeGe films with 2.8 MeV Au4+ ions at varying fluences, inducing amorphous regions within the crystalline matrix. Using low-temperature electrical transport and magnetization measurements, we observe a strong topological Hall effect with a double-peak feature that serves as a signature of skyrmions and antiskyrmions. These results are a step towards the development of information storage devices that use skyrmions and antiskyrmions as storage bits, and our system may serve as a testbed for theoretically predicted phenomena in skyrmion-antiskyrmion crystals.
Gold-germanium (Au xGe 1 - x) solid solutions have been demonstrated as highly sensitive thin film thermometers for cryogenic applications. However, little is known regarding the performance of the films for thicknesses less than 100 nm. In response, we report on the resistivity and temperature coefficient of resistance (TCR) for sputtered films with thicknesses ranging from 10 to 100 nm and annealed at temperatures from 22 to 200 °C. The analysis is focused upon composition x = 0.17, which demonstrates a strong temperature sensitivity over a broad range. The thinnest films are found to provide an enhancement in TCR, which approaches 20% K - 1 at 10 K. Furthermore, reduced anneal temperatures are required to crystallize the Ge matrix and achieve a maximum TCR for films of reduced thickness. These features favor the application of ultra-thin films as high-sensitivity, on-device thermometers in micro- and nanolectromechanical systems.
The fabrication of long-lived electrical contacts to thermoelectric Bi2Te3-based modules is a challenging problem due to chemical incompatibilities and rapid diffusion rates. Previously, technical guidance from SAND report 2015-7203 selected electroplated Au as the preferred method for fabrication of long-lived contacts because of concerns that the grain structure of sputtered/physical vapor deposited (PVD) Au contacts can evolve during aging. We have re-evaluated PVD Au contacts and show that they are appropriate for long-life service. We measure grain size and morphology at different aging times under accelerated temperature gradient conditions, and we show that the PVD Au contacts are stable and remain relatively unchanged. The PVD Au fabricated here is not subject to the deterioration observed in the previous report.
Two-dimensional (2D) metal-boride-derived nanostructures have been a focus of intense research for the past decade, with an emphasis on new synthetic approaches, as well as on the exploration of possible applications in next-generation advanced materials and devices. Their unusual mechanical, electronic, optical, and chemical properties, arising from low dimensionality, present a new paradigm to the science of metal borides that has traditionally focused on their bulk properties. This Perspective discusses the current state of research on metal-boride-derived 2D nanostructures, highlights challenges that must be overcome, and identifies future opportunities to fully utilize their potential.
The surfaces of textured polycrystalline N-type bismuth telluride and P-type antimony telluride materials were investigated using ex situ photoelectron emission microscopy (PEEM). PEEM enabled imaging of the work function for different oxidation times due to exposure to air across sample surfaces. The spatially averaged work function was also tracked as a function of air exposure time. N-type bismuth telluride showed an increase in the work function around grain boundaries relative to grain interiors during the early stages of air exposure-driven oxidation. At longer time exposure to air, the surface became homogenous after a ∼5 nm-thick oxide formed. X-ray photoemission spectroscopy was used to correlate changes in PEEM imaging in real space and work function evolution to the progressive growth of an oxide layer. The observed work function contrast is consistent with the pinning of electronic surface states due to the defects at a grain boundary.
Coherent manipulation of quantum states is at the core of quantum information science (QIS). Many state-of-the-art quantum systems rely on microwave fields for quantum operations. As such, the microwave electromagnetic fields serve as the ideal "quantum bus" to integrate different types of QIS systems into a hybrid quantum system. Superconducting metamaterials are artificial materials consisting of arrays of superconducting resonant microstructures with sizes much smaller than the microwave wavelengths of interest. Superconducting metamaterials are a strong candidate medium for the microwave quantum bus, because the effective impedance, field distributions, and frequency response can all be controlled by engineering the microstructures, electrical bias, and magnetic flux while maintaining extremely low loss. In this project, we investigate the fundamental unit of a superconducting metamaterial - a resonator with physical dimensions much smaller than the microwave wavelengths - using NbTiN as the working superconductor, whose high operating temperatures and magnetic fields are desirable attributes for compatibility with a wide variety of quantum systems. We first studied the properties of sputtered NbTiN thin films by correlating the film thickness with the normal state resistivity, superconducting transition temperature, and resonances of transmission line resonators made from these films. We developed a process flow and designed a coplanar waveguide platform for studying small resonators. The platform significantly shortens the turnaround times of the resonator fabrication and testing cycles. Several resonators with different designs were fabricated and tested at 4 Kelvin. Resonances were observed in some resonator testers. Potential paths for improvements and future directions are discussed.
