Publications

Coulomb drag is a powerful tool to study interactions in coupled low-dimensional systems. Historically, Coulomb drag has been attributed to a frictional force arising from momentum transfer whose direction is dictated by the current flow. In the absence of electron-electron correlations, treating the Coulomb drag circuit as a rectifier of noise fluctuations yields similar conclusions about the reciprocal nature of Coulomb drag. In contrast, recent findings in one-dimensional systems have identified a nonreciprocal contribution to Coulomb drag that is independent of the current flow direction. In this work, we present Coulomb drag measurements between vertically coupled GaAs/AlGaAs quantum wires separated vertically by a hard barrier only 15 nm wide, where both reciprocal and nonreciprocal contributions to the drag signal are observed simultaneously, and whose relative magnitudes are temperature and gate tunable. Our study opens up the possibility of studying the physical mechanisms behind the onset of both Coulomb drag contributions simultaneously in a single device, ultimately leading to a better understanding of Luttinger liquids in multi-channel wires and paving the way for the creation of energy harvesting devices.

Harmonic and subharmonic RF injection locking is demonstrated in a terahertz (THz) quantum-cascade vertical-external-cavity surface-emitting laser (QC-VECSEL). By tuning the RF injection frequency around integer multiples and submultiples of the cavity round-trip frequency, different harmonic and subharmonic orders can be excited in the same device. Modulation-dependent behavior of the device has been studied with recorded lasing spectral broadening and locking bandwidths in each case. In particular, harmonic injection locking results in the observation of harmonic spectra with bandwidths over 200 GHz. A semiclassical Maxwell-density matrix formalism has been applied to interpret QC-VECSEL dynamics, which aligns well with experimental observations.

The goal of this Exploratory Express project was to explore the possibility of tunable ferromagnetism in Mn or Cr incorporated epitaxial Ga₂O₃ films. Tunability of magnetic properties can enable novel applications in spintronics, quantum computing, and magnetism-based logics by allowing control of magnetism down to the nanoscale. Carriers (electrons or holes) mediated ferromagnetic ordering in semiconductor can lead to tunable ferromagnetism by leveraging the tunability of carrier density with doping level, gate electric field, or optical pumping of the carriers. The magnetic ions (Cr or Mn) in Ga₂O₃ act as localized spin centers which can potentially be magnetically coupled through conduction electrons to enable ferromagnetic ordering. Here we investigated tunable ferromagnetism in beta Ga₂O₃ semiconductor host with various n-doping levels by incorporating 2.4 atomic percent Mn or Cr. The R&D approach involved growth of epitaxial Ga₂O₃ film on sapphire or Ga₂O₃ substrate, implantation of Mn or Cr ions, annealing of the samples post implantation, and magnetic measurements. We studied magnetic behavior of Mn:Ga₂O₃ as a function of different n-doping levels and various annealing temperatures. The vibrating sample magnetometry (VSM) measurement exhibited strong ferromagnetic signals from the annealed Mn:Ga₂O₃ sample with n-doping level of 5E19 cm^-3. This ferromagnetic behavior disappears from Mn:Ga₂O₃ when the n-doping level is reduced to 5E16 cm^-3. Although these results are to be further verified by other measurement schemes due to the observation of background ferromagnetism from the growth substrate, these results indicate the possibility of tunable ferromagnetism in Mn:Ga₂O₃ mediated by conduction electrons.

Frequency-modulated (FM) combs based on active cavities like quantum cascade lasers have recently emerged as promising light sources in many spectral regions. Unlike passive modelocking, which generates amplitude modulation using the field’s amplitude, FM comb formation relies on the generation of phase modulation from the field’s phase. They can therefore be regarded as a phase-domain version of passive modelocking. However, while the ultimate scaling laws of passive modelocking have long been known—Haus showed in 1975 that pulses modelocked by a fast saturable absorber have a bandwidth proportional to effective gain bandwidth—the limits of FM combs have been much less clear. Here, we show that FM combs based on fast gain media are governed by the same fundamental limits, producing combs whose bandwidths are linear in the effective gain bandwidth. Not only do we show theoretically that the diffusive effect of gain curvature limits comb bandwidth, but we also show experimentally how this limit can be increased. By adding carefully designed resonant-loss structures that are evanescently coupled to the cavity of a terahertz laser, we reduce the curvature and increase the effective gain bandwidth of the laser, demonstrating bandwidth enhancement. Our results can better enable the creation of active chip-scale combs and be applied to a wide array of cavity geometries.

This study conducts a comparative analysis, using non-equilibrium Green’s functions (NEGF), of two state-of-the-art two-well (TW) Terahertz Quantum Cascade Lasers (THz QCLs) supporting clean 3-level systems. The devices have nearly identical parameters and the NEGF calculations with an abrupt-interface roughness height of 0.12 nm predict a maximum operating temperature (T_max) of ~ 250 K for both devices. However, experimentally, one device reaches a T_max of ~ 250 K and the other a T_max of only ~ 134 K. Both devices were fabricated and measured under identical conditions in the same laboratory, with high quality processes as verified by reference devices. The main difference between the two devices is that they were grown in different MBE reactors. Our NEGF-based analysis considered all parameters related to MBE growth, including the maximum estimated variation in aluminum content, growth rate, doping density, background doping, and abrupt-interface roughness height. From our NEGF calculations it is evident that the sole parameter to which a drastic drop in T_max could be attributed is the abrupt-interface roughness height. We can also learn from the simulations that both devices exhibit high-quality interfaces, with one having an abrupt-interface roughness height of approximately an atomic layer and the other approximately a monolayer. However, these small differences in interface sharpness are the cause of the large performance discrepancy. This underscores the sensitivity of device performance to interface roughness and emphasizes its strategic role in achieving higher operating temperatures for THz QCLs. We suggest Atom Probe Tomography (APT) as a path to analyze and measure the (graded)-interfaces roughness (IFR) parameters for THz QCLs, and subsequently as a design tool for higher performance THz QCLs, as was done for mid-IR QCLs. Our study not only addresses challenges faced by other groups in reproducing the record T_max of ~ 250 K and ~ 261 K but also proposes a systematic pathway for further improving the temperature performance of THz QCLs beyond the state-of-the-art.

Here, it is demonstrated that single-crystalline and highly doped GaAs membranes are excellent candidates for realizing infrared-transparent shields of electromagnetic interference at millimeter frequencies. Measured optical transmittance spectra for the semiconductor membranes show resonant features between 750 and 2500 nm, with a 100% maximum transmittance. The shielding effectiveness of the membranes is extracted from measured scattering parameters between 65 and 85 GHz. Selected GaAs membranes and membranes/polyamide films exhibit shielding effectiveness ranging from 22 to 40 dB, which are suitable values to ensure the safe operation of infrared devices for commercial applications. Theoretical calculations based on a plane wave model show that the interplay of primary reflection and multiple internal reflections of the radio-frequency waves results in broadband shielding capabilities of the membrane between 10 and 300 GHz.

Terahertz (THz) near-field imaging and spectroscopy provide valuable insights into the fundamental physical processes occurring in THz resonators and metasurfaces on the subwavelength scale. However, so far, the mapping of THz surface currents has remained outside the scope of THz near-field techniques. In this study, we demonstrate that aperture-type scanning near-field microscopy enables non-contact imaging of THz surface currents in subwavelength resonators. Through extensive near-field mapping of an asymmetric D-split-ring THz resonator and full electromagnetic simulations of the resonator and the probe, we demonstrate the correlation between the measured near-field images and the THz surface currents. The observed current dynamics in the interval of several picoseconds reveal the interplay between several excited modes, including dark modes, whereas broadband THz near-field spectroscopy analysis enables the characterization of electromagnetic resonances defined by the resonator geometry.

Interband cascade light-emitting diodes (ICLEDs) offer attractive advantages for infrared applications, which would greatly expand if high-quality growth on silicon substrates could be achieved. Here, this work describes the formation of threading dislocations in ICLEDs grown monolithically on GaSb-on-Silicon wafers. The epitaxial growth is done in two stages: the GaSb-on-Silicon buffer is grown first, followed by the ICLED growth. The buffer growth involves the nucleation of a 10-nm-thick AlSb buffer layer on the silicon surface, followed by the GaSb growth. The AlSb nucleation layer promotes the formation of 90° and 60° interfacial misfit dislocations, resulting in a highly planar morphology for subsequent GaSb growth that is almost 100% relaxed. The resulting GaSb buffer for growth of the ICLED has a threading dislocation density of ~10⁷/cm² after ~3 μm of growth. The fabricated LEDs showed variations in device performance, with some devices demonstrating comparable light–current–voltage curves to those for devices grown on GaSb substrates, while other devices showed somewhat reduced relative performance. Cross-sectional transmission electron microscopy observations of the inferior diodes indicated that the multiplication of threading dislocations in the active region had most likely caused the increased leakage current and lower output power. Enhanced defect filter layers on the GaSb/Si substrates should provide more consistent diode performance and a viable future growth approach for antimonide-based ICLEDs and other infrared devices.

Skyrmions and antiskyrmions are nanoscale swirling textures of magnetic moments formed by chiral interactions between atomic spins in magnetic noncentrosymmetric materials and multilayer films with broken inversion symmetry. These quasiparticles are of interest for use as information carriers in next-generation, low-energy spintronic applications. To develop skyrmion-based memory and logic, we must understand skyrmion-defect interactions with two main goals—determining how skyrmions navigate intrinsic material defects and determining how to engineer disorder for optimal device operation. Here, we introduce a tunable means of creating a skyrmion-antiskyrmion system by engineering the disorder landscape in FeGe using ion irradiation. Specifically, we irradiate epitaxial B20-phase FeGe films with 2.8 MeV Au⁴⁺ ions at varying fluences, inducing amorphous regions within the crystalline matrix. Using low-temperature electrical transport and magnetization measurements, we observe a strong topological Hall effect with a double-peak feature that serves as a signature of skyrmions and antiskyrmions. These results are a step towards the development of information storage devices that use skyrmions and antiskyrmions as storage bits, and our system may serve as a testbed for theoretically predicted phenomena in skyrmion-antiskyrmion crystals.

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Photonic crystal nanobeam cavities are valued for their small mode volume, CMOS compatibility, and high coupling efficiency-crucial features for various low-power photonic applications and quantum information processing. However, despite their potential, nanobeam cavities often suffer from low quality factors due to fabrication imperfections that create surface states and optical absorption. In this work, we demonstrate InP nanobeam cavities with up to 140% higher quality factors by applying a coating of Al₂O₃ via atomic layer deposition to terminate dangling bonds and reduce surface absorption. Additionally, changing the deposition thickness allows precise tuning of the cavity mode wavelength without compromising the quality factor. This Al₂O₃ atomic layer deposition approach holds great promise for optimizing nanobeam cavities that are well-suited for integration with a wide range of photonic applications.

Design strategies for improving terahertz (THz) quantum cascade lasers (QCLs) in the 5-6THz range are investigated numerically and experimentally, with the goal of overcoming the degradation in performance that occurs as the laser frequency approaches the Reststrahlen band. Two designs aimed at 5.4THz were selected: one optimized for lower power dissipation and one optimized for better temperature performance. The active regions exhibited broadband gain, with the strongest modes lasing in the 5.3-5.6THz range, but with other various modes observed ranging from 4.76 to 6.03THz. Pulsed and continuous-wave (cw) operation is observed up to temperatures of 117K and 68K, respectively. In cw mode, the ridge laser has modes up to 5.71THz - the highest reported frequency for a THz QCL in cw mode. The waveguide loss associated with the doped contact layers and metallization is identified as a critical limitation to performance above 5THz.

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Due to its tunable bandgap, anisotropic behavior, and superior thermoelectric properties, device applications using layered tellurene (Te) are becoming more attractive. Here, we report a thinning technique for exfoliated tellurene nanosheets using thermal annealing in an oxygen environment. We characterize different thinning parameters, including temperature and annealing time. Based on our measurements, we show that controlled layer thinning occurs in the narrow temperature range of 325-350 °C. We also show a reliable method to form β-tellurene oxide (β-TeO2), which is an emerging wide bandgap semiconductor with promising electronic and optoelectronic properties. This wide bandgap semiconductor exhibits a broad photoluminescence (PL) spectrum with multiple peaks covering the range of 1.76-2.08 eV. This PL emission, coupled with Raman spectra, is strong evidence of the formation of 2D β-TeO2. We discuss the results obtained and the mechanisms of Te thinning and β-TeO2 formation at different temperature regimes. We also discuss the optical bandgap of β-TeO2 and show the existence of pronounced excitonic effects evident by the large exciton binding energy in this 2D β-TeO2 system that reach 1.54-1.62 eV for bulk and monolayer, respectively. Our work can be utilized to have better control over the Te nanosheet thickness. It also sheds light on the formation of well-controlled β-TeO2 layered semiconductors for electronic and optoelectronic applications.

Mode-locked vertical external cavity semiconductor lasers are a unique class of nonlinear dynamical systems driven far from equilibrium. We present a novel, to the best of our knowledge, experimental result, supported by rigorous microscopic simulations, of two coexisting mode-locked V-cavity configurations sourced by a common gain medium and operating as independent channels at angle controlled separated wavelengths. Microscopic simulations support pulses coincident on the common gain chip extracting photons from a nearby pair of coexisting kinetic holes burned in the carrier distributions.

The effect of doping concentration on the temperature performance of the novel split-well resonant-phonon (SWRP) terahertz quantum-cascade laser (THz QCL) scheme supporting a clean 4-level system design was analyzed using non-equilibrium Green’s functions (NEGF) calculations. Experimental research showed that increasing the doping concentration in these designs led to better results compared to the split-well direct-phonon (SWDP) design, which has a larger overlap between its active laser states and the doping profile. However, further improvement in the temperature performance was expected, which led us to assume there was an increased gain and line broadening when increasing the doping concentration despite the reduced overlap between the doped region and the active laser states. Through simulations based on NEGF calculations we were able to study the contribution of the different scattering mechanisms on the performance of these devices. We concluded that the main mechanism affecting the lasers’ temperature performance is electron-electron (e-e) scattering, which largely contributes to gain and line broadening. Interestingly, this scattering mechanism is independent of the doping location, making efforts to reduce overlap between the doped region and the active laser states less effective. Optimization of the e-e scattering thus could be reached only by fine tuning of the doping density in the devices. By uncovering the subtle relationship between doping density and e-e scattering strength, our study not only provides a comprehensive understanding of the underlying physics but also offers a strategic pathway for overcoming current limitations. This work is significant not only for its implications on specific devices but also for its potential to drive advancements in the entire THz QCL field, demonstrating the crucial role of e-e scattering in limiting temperature performance and providing essential knowledge for pushing THz QCLs to new temperature heights.

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A dry etching process to transfer the pattern of a photonic integrated circuit design for high-speed laser communications is described. The laser stack under consideration is a 3.2-µm-thick InGaAs/InAlAs/InAlGaAs epitaxial structure grown by molecular beam epitaxy. The etching was performed using Cl2-based inductively-coupled-plasma and reactive-ion-etching (ICP-RIE) reactors. Four different recipes are presented in two similar ICP-RIE reactors, with special attention paid to the etched features formed with various hard mask compositions, in-situ passivations, and process temperatures. The results indicate that it is possible to produce high-aspect-ratio features with sub-micron separation on this multilayer structure. Additionally, the results of the etching highlight the tradeoffs involved with the corresponding recipes.

Coulomb drag experiments have been an essential tool to study strongly interacting low-dimensional systems. Historically, this effect has been explained in terms of momentum transfer between electrons in the active and the passive layer. We report Coulomb drag measurements between laterally coupled GaAs/AlGaAs quantum wires in the multiple one-dimensional (1D) sub-band regime that break Onsager's reciprocity upon both layer and current direction reversal, in contrast to prior 1D Coulomb drag results. The drag signal shows nonlinear current-voltage (I-V) characteristics, which are well characterized by a third-order polynomial fit. These findings are qualitatively consistent with a rectified drag signal induced by charge fluctuations. However, the nonmonotonic temperature dependence of this drag signal suggests that strong electron-electron interactions, expected within the Tomonaga-Luttinger liquid framework, remain important and standard interaction models are insufficient to capture the qualitative nature of rectified 1D Coulomb drag.

The epitaxial development and characterization of metamorphic “GaSb-on-silicon” buffers as substrates for antimonide devices is presented. The approach involves the growth of a spontaneously and fully relaxed GaSb metamorphic buffer in a primary epitaxial reactor, and use of the resulting “GaSb-on-silicon” wafer to grow subsequent layers in a secondary epitaxial reactor. The buffer growth involves four steps—silicon substrate preparation for oxide removal, nucleation of AlSb on silicon, growth of the GaSb buffer, and finally capping of the buffer to prevent oxidation. This approach on miscut silicon substrates leads to a buffer with negligible antiphase domain density. The growth of this buffer is based on inducing interfacial misfit dislocations between an AlSb nucleation layer and the underlying silicon substrate, which results in a fully relaxed GaSb buffer. A 1 μm thick GaSb layer buffer grown on silicon has ~9.2 × 10⁷ dislocations/cm². The complete lack of strain in the epitaxial structure allows subsequent growths to be accurately lattice matched, thus making the approach ideal for use as a substrate. Here we characterize the GaSb-on-silicon wafer using high-resolution x-ray diffraction and transmission electron microscopy. The concept’s feasibility is demonstrated by growing interband cascade light emitting devices on the GaSb-on-silicon wafer. The performance of the resulting LEDs on silicon approaches that of counterparts grown lattice matched on GaSb.

We propose a method to extract the upper laser level’s (ULL’s) excess electronic temperature from the analysis of the maximum light output power (P_max) and current dynamic range ΔJ_d = (J_max – J_th) of terahertz quantum cascade lasers (THz QCLs). We validated this method, both through simulation and experiment, by applying it on THz QCLs supporting a clean three-level system. Detailed knowledge of electronic excess temperatures is of utmost importance in order to achieve high temperature performance of THz QCLs. Our method is simple and can be easily implemented, meaning an extraction of the excess electron temperature can be achieved without intensive experimental effort. This knowledge should pave the way toward improvement of the temperature performance of THz QCLs beyond the state-of-the-art.

We hereby offer a comprehensive analysis of various factors that could potentially enable terahertz quantum cascade lasers (THz QCLs) to achieve room temperature performance. We thoroughly examine and integrate the latest findings from recent studies in the field. Our work goes beyond a mere analysis; it represents a nuanced and comprehensive exploration of the intricate factors influencing the performance of THz QCLs. Through a comprehensive and holistic approach, we propose novel insights that significantly contribute to advancing strategies for improving the temperature performance of THz QCLs. This all-encompassing perspective allows us not only to present a synthesis of existing knowledge but also to offer a fresh and nuanced strategy to improve the temperature performance of THz QCLs. We draw new conclusions from prior works, demonstrating that the key to enhancing THz QCL temperature performance involves not only optimizing interface quality but also strategically managing doping density, its spatial distribution, and profile. This is based on our results from different structures, such as two experimentally demonstrated devices: the spit-well resonant-phonon and the two-well injector direct-phonon schemes for THz QCLs, which allow efficient isolation of the laser levels from excited and continuum states. In these schemes, the doping profile has a setback that lessens the overlap of the doped region with the active laser states. Our work stands as a valuable resource for researchers seeking to gain a deeper understanding of the evolving landscape of THz technology. Furthermore, we present a novel strategy for future endeavors, providing an enhanced framework for continued exploration in this dynamic field. This strategy should pave the way to potentially reach higher temperatures than the latest records reached for T_max of THz QCLs.

We demonstrate an InAs-based terahertz (THz) metasurface emitter that can generate and focus THz pulses using a binary-phase Fresnel zone plate concept. The metalens emitter successfully generates a focused THz beam without additional THz optics.