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Rapid subsurface analysis of frequency-domain thermoreflectance images with K-means clustering

Journal of Applied Physics

Jarzembski, Amun J.; Piontkowski, Zachary T.; Hodges, Wyatt L.; Bahr, Matthew; McDonald, Anthony E.; Delmas, William; Pickrell, Gregory P.; Yates, Luke Y.

K-means clustering analysis is applied to frequency-domain thermoreflectance (FDTR) hyperspectral image data to rapidly screen the spatial distribution of thermophysical properties at material interfaces. Performing FDTR while raster scanning a sample consisting of 8.6 μ m of doped-silicon (Si) bonded to a doped-Si substrate identifies spatial variation in the subsurface bond quality. Routine thermal analysis at select pixels quantifies this variation in bond quality and allows assignment of bonded, partially bonded, and unbonded regions. Performing this same routine thermal analysis across the entire map, however, becomes too computationally demanding for rapid screening of bond quality. To address this, K-means clustering was used to reduce the dimensionality of the dataset from more than 20 000 pixel spectra to just K = 3 component spectra. The three component spectra were then used to express every pixel in the image through a least-squares minimized linear combination providing continuous interpolation between the components across spatially varying features, e.g., bonded to unbonded transition regions. Fitting the component spectra to the thermal model, thermal properties for each K cluster are extracted and then distributed according to the weighting established by the regressed linear combination. Thermophysical property maps are then constructed and capture significant variation in bond quality over 25 μ m length scales. The use of K-means clustering to achieve these thermal property maps results in a 74-fold speed improvement over explicit fitting of every pixel.

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Label-Free, Noninvasive Bone Cell Classification by Hyperspectral Confocal Raman Microscopy

Chemical and Biomedical Imaging

Hayes, Dulce C.; McDonald, Anthony E.; Pattison, Kalista B.; Butler, Kimberly B.; Timlin, Jerilyn A.; Piontkowski, Zachary T.

Characterizing and identifying cells in multicellular in vitro models remain a substantial challenge. Here, we utilize hyperspectral confocal Raman microscopy and principal component analysis coupled with linear discriminant analysis to form a label-free, noninvasive approach for classifying bone cells and osteosarcoma cells. Through the development of a library of hyperspectral Raman images of the K7M2-wt osteosarcoma cell lines, 7F2 osteoblast cell lines, RAW 264.7 macrophage cell line, and osteoclasts induced from RAW 264.7 macrophages, we built a linear discriminant model capable of correctly identifying each of these cell types. The model was cross-validated using a k-fold cross validation scheme. The results show a minimum of 72% accuracy in predicting cell type. We also utilize the model to reconstruct the spectra of K7M2 and 7F2 to determine whether osteosarcoma cancer cells and normal osteoblasts have any prominent differences that can be captured by Raman. We find that the main differences between these two cell types are the prominence of the β-sheet protein secondary structure in K7M2 versus the α-helix protein secondary structure in 7F2. Additionally, differences in the CH2 deformation Raman feature highlight that the membrane lipid structure is different between these cells, which may affect the overall signaling and functional contrasts. Overall, we show that hyperspectral confocal Raman microscopy can serve as an effective tool for label-free, nondestructive cellular classification and that the spectral reconstructions can be used to gain deeper insight into the differences that drive different functional outcomes of different cells.

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Inversion for Thermal Properties with Frequency Domain Thermoreflectance

ACS Applied Materials and Interfaces

Treweek, Benjamin T.; Laros, James H.; Hodges, Wyatt L.; Jarzembski, Amun J.; Bahr, Matthew; Jordan, Matthew J.; McDonald, Anthony E.; Yates, Luke Y.; Walsh, Timothy W.; Pickrell, Gregory P.

3D integration of multiple microelectronic devices improves size, weight, and power while increasing the number of interconnections between components. One integration method involves the use of metal bump bonds to connect devices and components on a common interposer platform. Significant variations in the coefficient of thermal expansion in such systems lead to stresses that can cause thermomechanical and electrical failures. More advanced characterization and failure analysis techniques are necessary to assess the bond quality between components. Frequency domain thermoreflectance (FDTR) is a nondestructive, noncontact testing method used to determine thermal properties in a sample by fitting the phase lag between an applied heat flux and the surface temperature response. The typical use of FDTR data involves fitting for thermal properties in geometries with a high degree of symmetry. In this work, finite element method simulations are performed using high performance computing codes to facilitate the modeling of samples with arbitrary geometric complexity. A gradient-based optimization technique is also presented to determine unknown thermal properties in a discretized domain. Using experimental FDTR data from a GaN-diamond sample, thermal conductivity is then determined in an unknown layer to provide a spatial map of bond quality at various points in the sample.

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Sensing depths in frequency domain thermoreflectance

Journal of Applied Physics

Hodges, Wyatt L.; Jarzembski, Amun J.; McDonald, Anthony E.; Ziade, Elbara; Pickrell, Gregory P.

A method is developed to calculate the length into a sample to which a Frequency Domain Thermoreflectance (FDTR) measurement is sensitive. Sensing depth and sensing radius are defined as limiting cases for the spherically spreading FDTR measurement. A finite element model for FDTR measurements is developed in COMSOL multiphysics and used to calculate sensing depth and sensing radius for silicon and silicon dioxide samples for a variety of frequencies and laser spot sizes. The model is compared to experimental FDTR measurements. Design recommendations for sample thickness are made for experiments where semi-infinite sample depth is desirable. For measurements using a metal transducer layer, the recommended sample thickness is three thermal penetration depths, as calculated from the lowest measurement frequency.

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Effects of strain, disorder, and Coulomb screening on free-carrier mobility in doped cadmium oxide

Journal of Applied Physics

Piontkowski, Zachary T.; Runnerstrom, Evan L.; Cleri, Angela; McDonald, Anthony E.; Ihlefeld, Jon; Saltonstall, Christopher B.; Maria, Jon P.; Beechem, Thomas E.

The interplay of stress, disorder, and Coulomb screening dictating the mobility of doped cadmium oxide (CdO) is examined using Raman spectroscopy to identify the mechanisms driving dopant incorporation and scattering within this emerging infrared optical material. Specifically, multi-wavelength Raman and UV-vis spectroscopies are combined with electrical Hall measurements on a series of yttrium (X = Y) and indium (X = In) doped X:CdO thin-films. Hall measurements confirm n-type doping and establish carrier concentrations and mobilities. Spectral fitting along the low-frequency Raman combination bands, especially the TA+TO(X) mode, reveals that the evolution of strain and disorder within the lattice as a function of dopant concentration is strongly correlated with mobility. Coupling between the electronic and lattice environments was examined through analysis of first- and second-order longitudinal-optical phonon-plasmon coupled modes that monotonically decrease in energy and asymmetrically broaden with increasing dopant concentration. By fitting these trends to an impurity-induced Fröhlich model for the Raman scattering intensity, exciton-phonon and exciton-impurity coupling factors are quantified. These coupling factors indicate a continual decrease in the amount of ionized impurity scattering with increasing dopant concentration and are not as well correlated with mobility. This shows that lattice strain and disorder are the primary determining factors for mobility in donor-doped CdO. In aggregate, the study confirms previously postulated defect equilibrium arguments for dopant incorporation in CdO while at the same time identifying paths for its further refinement.

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Thermal conductivity of (Ge2Sb2Te5)1–xCx phase change films

Journal of Applied Physics

Scott, Ethan A.; Ziade, Elbara Z.; Saltonstall, Christopher B.; McDonald, Anthony E.; Rodriguez, Mark A.; Hopkins, Patrick E.; Laros, James H.; Adams, David P.

Germanium–antimony–telluride has emerged as a nonvolatile phase change memory material due to the large resistivity contrast between amorphous and crystalline states, rapid crystallization, and cyclic endurance. Improving thermal phase stability, however, has necessitated further alloying with optional addition of a quaternary species (e.g., C). In this work, the thermal transport implications of this additional species are investigated using frequency-domain thermoreflectance in combination with structural characterization derived from x-ray diffraction and Raman spectroscopy. Specifically, the room temperature thermal conductivity and heat capacity of (Ge2Sb2Te5)1–xCx are reported as a function of carbon concentration (x ≤ 0:12) and anneal temperature (T ≤ 350 °C) with results assessed in reference to the measured phase, structure, and electronic resistivity. Phase stability imparted by the carbon comes with comparatively low thermal penalty as materials exhibiting similar levels of crystallinity have comparable thermal conductivity despite the addition of carbon. The additional thermal stability provided by the carbon does, however, necessitate higher anneal temperatures to achieve similar levels of structural order.

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Results 1–25 of 52
Results 1–25 of 52