Publications

Abstract not provided.

Polarimetric imaging applications at the 2 to 5 μm or Mid-Wave Infrared (MWIR) range use large pixel-count focal plane arrays (FPA) with small pixel size. This project is centered in designing, fabricating and testing micropolarizers that work in that wavelength regime and intended for that type of FPAs. The micro-polarizers will be used in conjunction with a FPA in snapshot mode and will be in the near field of the imaging device. The pixel pitches for some commercial FPAs are small enough that the finite apertures of the polarizing devices may significantly affect their performance given that their aperture size varies between 3 and 5 waves. We are interested in understanding the effect on extinction ratio due to variations in the edge terminations of a polarizer with a small aperture. Edge terminations are the spaces between the first or last wire with the perimeter of the aperture of the polarizer. While this parameter has negligible effects on a larger polarizer, it will be significant for apertures that are about 3 to 5 waves. We will present data that indicates significant variation in performance due to edge terminations.

Subwavelength diffractive features etched into a substrate lead to form birefringence that can be utilized to produce polarization sensitive elements such as waveplates. Using etched features allows for the development of pixilated devices to be used in conjunction with focal plane arrays in polarimetric imaging systems. Typically, the main drawback from using diffractive devices is their high sensitivity to wavelength. Taking advantage of the dispersion of the form birefringence, diffractive waveplates with good achromatic characteristics can be designed. We will report on diffractive waveplates designed for minimal phase retardation error across the 2-5 micron spectral regime. The required fabrication processes of the sub-wavelength feature sizes will be discussed as well as the achromatic performance and transmission efficiency of final devices. Previous work in this area has produced good results over a subset of this wavelength band, but designing for this extended band is particularly challenging. In addition, the effect of the finite size of the apertures of the pixilated devices is of particular interest since they are designed to be used in conjunction with a detector array. The influence of small aperture sizes will also be investigated.

We report here on an effort to design and fabricate a polarization splitter that utilizes form-birefringence to disperse an input beam as a function of polarization content as well as wavelength spectrum. Our approach is unique in the polarization beam splitting geometry and the potential for tailoring the polarized beams' phase fronts to correct aberrations or add focusing power. A first cut design could be realized with a chirped duty cycle grating at a single etch depth. However, this approach presents a considerable fabrication obstacle since etch depths are a strong function of feature size, or grating period. We fabricated a period of 1.0 micron form-birefringent component, with a nominal depth of 1.7 microns, in GaAs using a CAIBE system with a 2-inch ion beam source diameter. The gas flows, ion energy, and sample temperature were all optimized to yield the desired etch profile.

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This diffractive optical element (DOE) LDRD is divided into two tasks. In Task 1, we develop two new DOE technologies: (1) a broad wavelength band effective anti-reflection (AR) structure and (2) a design tool to encode dispersion and polarization information into a unique diffraction pattern. In Task 2, we model, design, and fabricate a subwavelength polarization splitter. The first technology is an anti-reflective (AR) layer that may be etched into the DOE surface. For many wavelengths of interest, transmissive silicon DOEs are ideal. However, a significant portion of light (30% from each surface) is lost due to Fresnel reflection. To address this issue, we investigate a subwavelength, surface relief structure that acts as an effective AR coating. The second DOE component technology in Task 1 is a design tool to determine the optimal DOE surface relief structure that can encode the light's degree of dispersion and polarization into a unique spatial pattern. Many signals of interest have unique spatial, temporal, spectral, and polarization signatures. The ability to disperse the signal into a unique diffraction pattern would result in improved signal detection sensitivity with a simultaneous reduction in false alarm. Task 2 of this LDRD project is to investigate the modeling, design, and fabrication of subwavelength birefringent devices for polarimetric spectral sensing and imaging applications. Polarimetric spectral sensing measures the spectrum of the light and polarization state of light at each wavelength simultaneously. The capability to obtain both polarization and spectral information can help develop target/object signature and identify the target/object for several applications in NP&MC and national security.

We have measured the temperature dependence of mechanical dissipation in tetrahedral amorphous carbon flexural and torsional resonators over the temperature range from 300 to 1023 K. The mechanical dissipation was found to be controlled by defects within the material, and the magnitude and temperature dependence of the dissipation were found to depend on whether flexural or torsional vibrational modes were excited. The defects that were active under flexural stresses have a relatively flat concentration from 0.4 to 0.7 eV with an ever increasing defect concentration up to 1.9 eV. Under shear stresses (torsion), the defect activation energies increase immediately beginning at 0.4 eV, with increasing defect concentration at higher energies.

The goal of this one year LDRD was to improve the overall efficiency of InGaN LEDs by improving the extraction of light from the semiconductor chip. InGaN LEDs are currently the most promising technology for producing high efficiency blue and green semiconductor light emitters. Improving the efficiency of InGaN LEDs will enable a more rapid adoption of semiconductor based lighting. In this LDRD, we proposed to develop photonic structures to improve light extraction from nitride-based light emitting diodes (LEDs). While many advanced device geometries were considered for this work, we focused on the use of a photonic crystal for improved light extraction. Although resonant cavity LEDs and other advanced structures certainly have the potential to improve light extraction, the photonic crystal approach showed the most promise in the early stages of this short program. The photonic crystal (PX)-LED developed here incorporates a two dimensional photonic crystal, or photonic lattice, into a nitride-based LED. The dimensions of the photonic crystal are selected such that there are very few or no optical modes in the plane of the LED ('lateral' modes). This will reduce or eliminate any radiation in the lateral direction so that the majority of the LED radiation will be in vertical modes that escape the semiconductor, which will improve the light-extraction efficiency. PX-LEDs were fabricated using a range of hole diameters and lattice constants and compared to control LEDs without a photonic crystal. The far field patterns from the PX-LEDs were dramatically modified by the presence of the photonic crystal. An increase in LED brightness of 1.75X was observed for light measured into a 40 degree emission cone with a total increase in power of 1.5X for an unencapsulated LED.

Electrical operation of III-Nitride light emitting diodes (LEDs) with photonic crystal structures is demonstrated. Employing photonic crystal structures in III-Nitride LEDs is a method to increase light extraction efficiency and directionality. The photonic crystal is a triangular lattice formed by dry etching into the III-Nitride LED. A range of lattice constants is considered (a {approx} 270-340nm). The III-Nitride LED layers include a tunnel junction providing good lateral current spreading without a semi-absorbing metal current spreader as is typically done in conventional III-Nitride LEDs. These photonic crystal III-Nitride LED structures are unique because they allow for carrier recombination and light generation proximal to the photonic crystal (light extraction area) yet displaced from the absorbing metal contact. The photonic crystal Bragg scatters what would have otherwise been guided modes out of the LED, increasing the extraction efficiency. The far-field light radiation patterns are heavily modified compared to the typical III-Nitride LED's Lambertian output. The photonic crystal affects the light propagation out of the LED surface, and the radiation pattern changes with lattice size. LEDs with photonic crystals are compared to similar III-Nitride LEDs without the photonic crystal in terms of extraction, directionality, and emission spectra.

Nano-electromechanical oscillators (NEMOs), capacitively-coupled radio frequency (RF) MEMS switches incorporating dissipative dielectrics, new processing technologies for tetrahedral amorphous carbon (ta-C) films, and scientific understanding of dissipation mechanisms in small mechanical structures were developed in this project. NEMOs are defined as mechanical oscillators with critical dimensions of 50 nm or less and resonance frequencies approaching 1 GHz. Target applications for these devices include simple, inexpensive clocks in electrical circuits, passive RF electrical filters, or platforms for sensor arrays. Ta-C NEMO arrays were used to demonstrate a novel optomechanical structure that shows remarkable sensitivity to small displacements (better than 160 fm/Hz {sup 1/2}) and suitability as an extremely sensitive accelerometer. The RF MEMS capacitively-coupled switches used ta-C as a dissipative dielectric. The devices showed a unipolar switching response to a unipolar stimulus, indicating the absence of significant dielectric charging, which has historically been the major reliability issue with these switches. This technology is promising for the development of reliable, low-power RF switches. An excimer laser annealing process was developed that permits full in-plane stress relaxation in ta-C films in air under ambient conditions, permitting the application of stress-reduced ta-C films in areas where low thermal budget is required, e.g. MEMS integration with pre-existing CMOS electronics. Studies of mechanical dissipation in micro- and nano-scale ta-C mechanical oscillators at room temperature revealed that mechanical losses are limited by dissipation associated with mechanical relaxation in a broad spectrum of defects with activation energies for mechanical relaxation ranging from 0.35 eV to over 0.55 eV. This work has established a foundation for the creation of devices based on nanomechanical structures, and outstanding critical research areas that need to be addressed for the successful application of these technologies have been identified.

Abstract not provided.

This SAND report is the final report on Sandia's Grand Challenge LDRD Project 27328, 'A Revolution in Lighting -- Building the Science and Technology Base for Ultra-Efficient Solid-state Lighting.' This project, which for brevity we refer to as the SSL GCLDRD, is considered one of Sandia's most successful GCLDRDs. As a result, this report reviews not only technical highlights, but also the genesis of the idea for Solid-state Lighting (SSL), the initiation of the SSL GCLDRD, and the goals, scope, success metrics, and evolution of the SSL GCLDRD over the course of its life. One way in which the SSL GCLDRD was different from other GCLDRDs was that it coincided with a larger effort by the SSL community - primarily industrial companies investing in SSL, but also universities, trade organizations, and other Department of Energy (DOE) national laboratories - to support a national initiative in SSL R&D. Sandia was a major player in publicizing the tremendous energy savings potential of SSL, and in helping to develop, unify and support community consensus for such an initiative. Hence, our activities in this area, discussed in Chapter 6, were substantial: white papers; SSL technology workshops and roadmaps; support for the Optoelectronics Industry Development Association (OIDA), DOE and Senator Bingaman's office; extensive public relations and media activities; and a worldwide SSL community website. Many science and technology advances and breakthroughs were also enabled under this GCLDRD, resulting in: 55 publications; 124 presentations; 10 book chapters and reports; 5 U.S. patent applications including 1 already issued; and 14 patent disclosures not yet applied for. Twenty-six invited talks were given, at prestigious venues such as the American Physical Society Meeting, the Materials Research Society Meeting, the AVS International Symposium, and the Electrochemical Society Meeting. This report contains a summary of these science and technology advances and breakthroughs, with Chapters 1-5 devoted to the five technical task areas: 1 Fundamental Materials Physics; 2 111-Nitride Growth Chemistry and Substrate Physics; 3 111-Nitride MOCVD Reactor Design and In-Situ Monitoring; 4 Advanced Light-Emitting Devices; and 5 Phosphors and Encapsulants. Chapter 7 (Appendix A) contains a listing of publications, presentations, and patents. Finally, the SSL GCLDRD resulted in numerous actual and pending follow-on programs for Sandia, including multiple grants from DOE and the Defense Advanced Research Projects Agency (DARPA), and Cooperative Research and Development Agreements (CRADAs) with SSL companies. Many of these follow-on programs arose out of contacts developed through our External Advisory Committee (EAC). In h s and other ways, the EAC played a very important role. Chapter 8 (Appendix B) contains the full (unedited) text of the EAC reviews that were held periodically during the course of the project.

Artificially structured photonic lattice materials are commonly investigated for their unique ability to block and guide light. However, an exciting aspect of photonic lattices which has received relatively little attention is the extremely high refractive index dispersion within the range of frequencies capable of propagating within the photonic lattice material. In fact, it has been proposed that a negative refractive index may be realized with the correct photonic lattice configuration. This report summarizes our investigation, both numerically and experimentally, into the design and performance of such photonic lattice materials intended to optimize the dispersion of refractive index in order to realize new classes of photonic devices.

This report describes a passive, optical component called resonant subwavelength gratings (RSGs), which can be employed as one element in an RSG array. An RSG functions as an extremely narrow wavelength and angular band reflector, or mode selector. Theoretical studies predict that the infinite, laterally-extended RSG can reflect 100% of the resonant light while transmitting the balance of the other wavelengths. Experimental realization of these remarkable predictions has been impacted primarily by fabrication challenges. Even so, we will present large area (1.0mm) RSG reflectivity as high as 100.2%, normalized to deposited gold. Broad use of the RSG will only truly occur in an accessible micro-optical system. This program at Sandia is a normal incidence array configuration of RSGs where each array element resonates with a distinct wavelength to act as a dense array of wavelength- and mode-selective reflectors. Because of the array configuration, RSGs can be matched to an array of pixels, detectors, or chemical/biological cells for integrated optical sensing. Micro-optical system considerations impact the ideal, large area RSG performance by requiring finite extent devices and robust materials for the appropriate wavelength. Theoretical predictions and experimental measurements are presented that demonstrate the component response as a function of decreasing RSG aperture dimension and off-normal input angular incidence.

Abstract not provided.

High-quality-factor microcavities in two-dimensional photonic crystals at optical frequencies have a number of technological applications, such as cavity quantum electrodynamics, optical switching, filtering, and wavelength multiplexing. For such applications, it is useful to have a simple approach to tune the microcavity resonant wavelength. In this letter, we propose a microcavity design by which we can tune the resonant wavelength by changing the cavity geometry while still obtaining a high quality factor.

Abstract not provided.

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This project combined nanocomposite materials with microfabricated optical device structures for the development of microsensor arrays. For the nanocomposite materials we have designed, developed, and characterized self-assembling, organic/inorganic hybrid optical sensor materials that offer highly selective, sensitive, and reversible sensing capability with unique hierarchical nanoarchitecture. Lipid bilayers and micellar polydiacetylene provided selective optical response towards metal ions (Pb(II), Hg(II)), a lectin protein (Concanavalin A), temperature, and organic solvent vapor. These materials formed as composites in silica sol-gels to impart physical protection of the self-assembled structures, provide a means for thin film surface coatings, and allow facile transport of analytes. The microoptical devices were designed and prepared with two- and four-level diffraction gratings coupled with conformal gold coatings on fused silica. The structure created a number of light reflections that illuminated multiple spots along the silica surface. These points of illumination would act as the excitation light for the fluorescence response of the sensor materials. Finally, we demonstrate an integrated device using the two-level diffraction grating coupled with the polydiacetylene/silica material.

The goal of this LDRD was to engineer further improvements in a novel electron tunneling device, the double electron layer tunneling transistor (DELTT). The DELTT is a three terminal quantum device, which does not require lateral depletion or lateral confinement, but rather is entirely planar in configuration. The DELTT's operation is based on 2D-2D tunneling between two parallel 2D electron layers in a semiconductor double quantum well heterostructure. The only critical dimensions reside in the growth direction, thus taking full advantage of the single atomic layer resolution of existing semiconductor growth techniques such as molecular beam epitaxy. Despite these advances, the original DELTT design suffered from a number of performance short comings that would need to be overcome for practical applications. These included (i)a peak voltage too low ({approx}20 mV) to interface with conventional electronics and to be robust against environmental noise, (ii) a low peak current density, (iii) a relatively weak dependence of the peak voltage on applied gate voltage, and (iv) an operating temperature that, while fairly high, remained below room temperature. In this LDRD we designed and demonstrated an advanced resonant tunneling transistor that incorporates structural elements both of the DELTT and of conventional double barrier resonant tunneling diodes (RTDs). Specifically, the device is similar to the DELTT in that it is based on 2D-2D tunneling and is controlled by a surface gate, yet is also similar to the RTD in that it has a double barrier structure and a third collector region. Indeed, the device may be thought of either as an RTD with a gate-controlled, fully 2D emitter, or alternatively, as a ''3-layer DELTT,'' the name we have chosen for the device. This new resonant tunneling transistor retains the original DELTT advantages of a planar geometry and sharp 2D-2D tunneling characteristics, yet also overcomes the performance shortcomings of the original DELTT design. In particular, it exhibits the high peak voltages and current densities associated with conventional RTDs, allows sensitive control of the peak voltage by the control gate, and operates nearly at room temperature. Finally, we note under this LDRD we also investigated the use of three layer DELTT structures as long wavelength (Terahertz) detectors using photon-assisted tunneling. We have recently observed a narrowband (resonant) tunable photoresponse in related structures consisting of grating-gated double quantum wells, and report on that work here as well.

We have used selective AlGaAs oxidation, dry-etching, and high-gain semiconductor laser simulation to create new in-plane lasers with interconnecting passive waveguides for use in high-density photonic circuits and future integration of photonics with electronics. Selective oxidation and doping of semiconductor heterostructures have made vertical cavity surface emitting lasers (VCSELs) into the world's most efficient low-power lasers. We apply oxidation technology to improve edge-emitting lasers and photonic-crystal waveguides, making them suitable for monolithic integrated microsystems. Two types of lasers are investigated: (1) a ridge laser with resonant coupling to an output waveguide; (2) a selectively-oxidized laser with a low active volume and potentially sub-milliAmp threshold current. Emphasis is on development of high-performance lasers suited for monolithic integration with photonic circuit elements.

Abstract not provided.

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The authors describe the microfabrication of a multi-level diffractive optical element (DOE) onto a micro-electromechanical system (MEMS) as a key element in an integrated compact optical-MEMS laser scanner. The DOE is a four-level off-axis microlens fabricated onto a movable polysilicon shuttle. The microlens is patterned by electron beam lithography and etched by reactive ion beam etching. The DOE was fabricated on two generations of MEMS components. The first generation design uses a shuttle suspended on springs and displaced by a linear rack. The second generation design uses a shuttle guided by roller bearings and driven by a single reciprocating gear. Both the linear rack and the reciprocating gear are driven by a microengine assembly. The compact design is based on mounting the MEMS module and a vertical cavity surface emitting laser (VCSEL) onto a fused silica substrate that contains the rest of the optical system. The estimated scan range of the system is {+-}4{degree} with a spot size of 0.5 mm.

The authors report on their recent experimental studies of vertically-coupled quantum point contacts subject to in-plane magnetic fields. Using a novel flip-chip technique, mutually aligned split gates on both sides of a sub micron thick double quantum well heterostructure define a closely-coupled pair of ballistic one-dimensional (1D) constrictions. They observe quantized conductance steps due to each quantum well and demonstrate independent control of each ID constriction width. In addition, a novel magnetoconductance feature at {approximately}6 T is observed when a magnetic field is applied perpendicular to both the current and growth directions. This conductance dip is observed only when 1D subbands are populated in both the top and bottom constrictions. This data is consistent with a counting model whereby the number of subbands crossing the Fermi level changes with field due to the formation of an anticrossing in each pair of 1D subbands.

This report represents the completion of a three-year Laboratory-Directed Research and Development (LDRD) program to investigate combining microelectromechanical systems (MEMS) with optoelectronic components as a means of realizing compact optomechanical subsystems. Some examples of possible applications are laser beam scanning, switching and routing and active focusing, spectral filtering or shattering of optical sources. The two technologies use dissimilar materials with significant compatibility problems for a common process line. This project emphasized a hybrid approach to integrating optoelectronics and MEMS. Significant progress was made in developing processing capabilities for adding optical function to MEMS components, such as metal mirror coatings and through-vias in the substrate. These processes were used to demonstrate two integration examples, a MEMS discriminator driven by laser illuminated photovoltaic cells and a MEMS shutter or chopper. Another major difficulty with direct integration is providing the optical path for the MEMS components to interact with the light. The authors explored using folded optical paths in a transparent substrate to provide the interconnection route between the components of the system. The components can be surface-mounted by flip-chip bonding to the substrate. Micro-optics can be fabricated into the substrate to reflect and refocus the light so that it can propagate from one device to another and them be directed out of the substrate into free space. The MEMS components do not require the development of transparent optics and can be completely compatible with the current 5-level polysilicon process. They report progress on a MEMS-based laser scanner using these concepts.

A four-channel surface acoustic wave (SAW) chemical sensor array with associated RF electronics is monolithically integrated onto one GaAs IC. The sensor operates at 690 MHz from an on-chip SAW based oscillator and provides simple DC voltage outputs by using integrated phase detectors. This sensor array represents a significant advance in microsensor technology offering miniaturization, increased chemical selectivity, simplified system assembly, improved sensitivity, and inherent temperature compensation.

A two-dimensional (2D) photonic crystal is an attractive alternative and complimentary to its 3D counterpart, due to fabrication simplicity. A 2D crystal, however, confines light only in the 2D plane, but not in the third direction, the z-direction. Earlier experiments show that such a 2D system can exist, providing that the boundary effect in z-direction is negligible and that light is collimated in the 2D plane. Nonetheless, the usefulness of such 2D crystals is limited because they are incapable of guiding light in z-direction, which leads to diffraction loss. This drawback presents a major obstacle for realizing low-loss 2D crystal waveguides, bends and thresholdless lasers. A recent theoretical calculation, though, suggests a novel way to eliminate such a loss with a 2D photonic crystal slab. The concept of a lightcone is introduced as a criterion for fully guiding and controlling light. Although the leaky modes of a crystal slab have been studied, there have until now no experimental reports on probing its guided modes and band gaps. In this paper, a waveguide-coupled 2D photonic crystal slab is successfully fabricated from a GaAs/Al{sub x}O{sub y} material system and its intrinsic transmission properties are studied. The crystal slab is shown to have a strong 2D band gap at {lambda} {approximately} 1.5 {micro}m. Light attenuates as much as {approximately}5dB per period in the gap, the strongest ever reported for any 2D photonic crystal in optical {lambda}. More importantly, for the first time, the crystal slab is shown to be capable of controlling light fully in all three-dimensions. The lightcone criterion is also experimentally confirmed.

We have designed and assembled two generations of integrated micro-optical systems that deliver pump light and detect broadband laser-induced fluorescence in micro-fluidic chemical separation systems employing electrochromatography. The goal is to maintain the sensitivity attainable with larger, tabletop machines while decreasing package size and increasing throughput (by decreasing the required chemical volume). One type of micro-optical system uses vertical-cavity surface-emitting lasers (VCSELs) as the excitation source. Light from the VCSELs is relayed with four-level surface relief diffractive optical elements (DOEs) and delivered to the chemical volume through substrate-mode propagation. Indirect fluorescence from dye-quenched chemical species is collected and collimated with a high numerical aperture DOE. A filter blocks the excitation wavelength, and the resulting signal is detected as the chemical separation proceeds. Variations of this original design include changing the combination of reflective and transmissive DOEs and optimizing the high numerical aperture DOE with a rotationally symmetric iterative discrete on-axis algorithm. We will discuss the results of these implemented optimizations.

We study the low-temperature in-plane magnetoconductance of vertically coupled double quantum wires. Using a novel flip-chip technique, the wires are defined by two pairs of mutually aligned split gates on opposite sides of a≤1 micron thick AlGaAs/GaAs double quantum well heterostructure. We observe quantized conductance steps due to each quantum well and demonstrate independent control of each 1D wire. A broad dip in the magnetoconductance at approximately 6 T is observed when a magnetic field is applied perpendicular to both the current and growth directions. This conductance dip is observed only when 1D subbands are populated in both the top and bottom constrictions. This data is consistent with a counting model whereby the number of subbands crossing the Fermi level changes with field due to the formation of an anticrossing in each pair of 1D subbands.

The authors describe the design and microfabrication of an extremely compact optical system as a key element in an integrated capillary-channel electrochromatograph with laser induced fluorescence detection. The optical design uses substrate-mode propagation within the fused silica substrate. The optical system includes a vertical cavity surface-emitting laser (VCSEL) array, two high performance microlenses and a commercial photodetector. The microlenses are multilevel diffractive optics patterned by electron beam lithography and etched by reactive ion etching in fused silica. Two generations of optical subsystems are described. The first generation design is integrated directly onto the capillary channel-containing substrate with a 6 mm separation between the VCSEL and photodetector. The second generation design separates the optical system onto its own module and the source to detector length is further compressed to 3.5 mm. The systems are designed for indirect fluorescence detection using infrared dyes. The first generation design has been tested with a 750 nm VCSEL exciting a 10{sup -4} M solution of CY-7 dye. The observed signal-to-noise ratio of better than 100:1 demonstrates that the background signal from scattered pump light is low despite the compact size of the optical system and meets the system sensitivity requirements.

This LDRD project explored the fundamental physics of a new class of photonic materials, photonic bandgap structures (PBG), and examine its unique properties for the design and implementation of photonic devices on a nano-meter length scale for the control and confinement of light. The low loss, highly reflective and quantum interference nature of a PBG material makes it one of the most promising candidates for realizing an extremely high-Q resonant cavity, >10,000, for optoelectronic applications and for the exploration of novel photonic physics, such as photonic localization, tunneling and modification of spontaneous emission rate. Moreover, the photonic bandgap concept affords us with a new opportunity to design and tailor photonic properties in very much the same way we manipulate, or bandgap engineer, electronic properties through modern epitaxy.

We describe the microfabrication of an extremely compact optical system as a key element in an integrated capillary channel electrochromatograph with fluorescence detection. The optical system consists of a vertical cavity surface-emitting laser (VCSEL), two high performance microlenses, and a commercial photodetector. The microlenses are multilevel diffractive optics patterned by electron beam lithography and etched by reactive ion etching in fused silica. The design uses substrate-mode propagation within the fused silica substrate. Two generations of optical subsystems are described. The first generation design has a 6 mm optical length and is integrated directly onto the capillary channel-containing substrate. The second generation design separates the optical system onto its own substrate module and the optical path length is further compressed to 3.5 mm. The first generation design has been tested using direct fluorescence detection with a 750 nm VCSEL pumping a 10-4 M solution of CY-7 dye. The observed signal-to-noise ratio of better than 100:1 demonstrates that the background signal from scattered pump light is low despite the compact size of the optical system and is adequate for system sensitivity requirements. © 1999 American Vacuum Society.

A well-controlled, high-yield Josephson junction process in high temperature superconductors (HTS) is necessary for the demonstration of ultra-high-speed devices and circuits which exceed the capabilities of conventional electronics. The authors developed nanobridge Josephson junctions in high quality thin-film YBaCuO with dimensions below 100 nm fabricated using electron-beam nanolithography. They characterized this Josephson junction technology for process yield, junction parameter uniformity, and overall applicability for use in high-performance circuits. To facilitate the determination of junction parameters, they developed a measurement technique based on spectral analysis in the range of 90--160 GHz of phase-locked, oscillating arrays of up to 2,450 Josephson junctions. Because of the excellent yield and uniformity of the nanobridge junctions, they successfully applied the junction technology to a wide variety of circuits. These circuits included transmission-line pulse formers and 32 and 64-bit shift registers. The 32-bit shift register was shown to operate at clock speeds near 100 GHz and is believed to be one of the faster and more complex digital circuit demonstrated to date using high temperature superconductor technology.