The goal of this LDRD was to investigate III-antimonide/nitride based materials for unique semiconductor properties and applications. Previous to this study, lack of basic information concerning these alloys restricted their use in semiconductor devices. Long wavelength emission on GaAs substrates is of critical importance to telecommunication applications for cost reduction and integration into microsystems. Currently InGaAsN, on a GaAs substrate, is being commercially pursued for the important 1.3 micrometer dispersion minima of silica-glass optical fiber; due, in large part, to previous research at Sandia National Laboratories. However, InGaAsN has not shown great promise for 1.55 micrometer emission which is the low-loss window of single mode optical fiber used in transatlantic fiber. Other important applications for the antimonide/nitride based materials include the base junction of an HBT to reduce the operating voltage which is important for wireless communication links, and for improving the efficiency of a multijunction solar cell. We have undertaken the first comprehensive theoretical, experimental and device study of this material with promising results. Theoretical modeling has identified GaAsSbN to be a similar or potentially superior candidate to InGaAsN for long wavelength emission on GaAs. We have confirmed these predictions by producing emission out to 1.66 micrometers and have achieved edge emitting and VCSEL electroluminescence at 1.3 micrometers. We have also done the first study of the transport properties of this material including mobility, electron/hole mass, and exciton reduced mass. This study has increased the understanding of the III-antimonide/nitride materials enough to warrant consideration for all of the target device applications.
A novel planar resonant tunneling transistor is demonstrated. The growth structure is similar to that of a double-barrier resonant tunneling diode (RTD), except for a fully two-dimensional (2D) emitter formed by a quantum well. Current is fed laterally into the emitter, and the 2D--2D resonant tunneling current is controlled by a surface gate. This unique device structure achieves figures-of-merit, i.e. peak current densities and peak voltages, approaching that of state-of-the-art RTDs. Most importantly, sensitive control of the peak current and voltage is achieved by gating of the emitter quantum well subband energy. This quantum tunneling transistor shows exceptional promise for ultra-high speed and multifunctional operation at room temperature.
The optical gain spectra for GaInNAs/GaAs quantum wells are computed using a microscopic laser theory. From these spectra, the peak gain and carrier radiative decay rate as functions of carrier density are determined. These dependences allow the study of the lasing threshold current density of GaInNAs/GaAs quantum well structures.
The conduction band minimum formation of GaAs{sub 0.5{minus}y}P{sub 0.5{minus}y}N{sub 2y} is investigated for small nitrogen compositions (0.1% < 2y < 1.0%), by using a pseudopotential technique. This formation is caused by two unusual processes both involving the deep-gap impurity level existing in the dilute alloy limit y {r_arrow} 0. The first process is an anticrossing with the {Gamma}{sub Ic}-like extended state of GaAs{sub 0.5}P{sub 0.5}. The second process is an interaction with other impurity levels forming a subband. These two processes are expected to occur in any alloys exhibiting a deep-gap impurity level at one of its dilute limit.
The effect of lateral composition modulation, spontaneously generated during the epitaxial growth of a AlAs/InAs short-period superlattice, on the electronic band structure is investigated using photo-transmission and photoluminescence spectroscopy. Compared with uniform layers of similar average composition, the presence of the composition modulation considerably reduces the band gap energy and produces strongly polarized emission and absorption spectra. The authors demonstrate that the dominant polarization can selectively be aligned along the [{bar 1}10] or [010] crystallographic directions. In compressively strained samples, the use of (001) InP substrates slightly miscut toward [111]A or [101] resulted in modulation directions along [110] or [100], respectively, and dominant polarizations along a direction orthogonal to the respective composition modulation. Band gap reduction as high as 350 meV and 310 meV are obtained for samples with composition modulation along [110] and [100], respectively. Polarization ratios up to 26 are observed in transmission spectra.
Electron and hole transport in compensated, InGaAsN ({approx} 2% N) are examined through Hall mobility, photoconductivity, and solar cell photoresponse measurements. Short minority carrier diffusion lengths, photoconductive-response spectra, and doping dependent, thermally activated Hall mobilities reveal a broad distribution of localized states. At this stage of development, lateral carrier transport appears to be limited by large scale (>> mean free path) material inhomogeneities, not a random alloy-induced mobility edge.
Growth of InAs/AlAs short-period superlattices on appropriately miscut (001) InP substrates is shown to alter the microstructure of composition modulation from a 2D organization of short compositionally enriched wires to a single dominant modulation direction and wire lengths up to {approximately}1 {micro}m. The effects of miscut are interpreted in terms of surface step orientation and character. The material is strongly modulated and exhibits intense optical emission. The 1D modulations appear potentially useful for new devices that take advantage of the preferred direction formed in the growth plane.
The authors report a measurement of the variation of the value of the linewidth of an excitonic transition in InGaAsN alloys (1 and 2% nitrogen) as a function of hydrostatic pressure using photoluminescence spectroscopy. The samples were grown by metal-organic chemical vapor deposition and the photoluminescence measurements were performed a 4K. The authors find that the value of the excitonic linewidth increases as a function of pressure until about 100 kbars after which it tends to saturate. This change in the excitonic linewidth is used to derive the pressure variation of the reduced mass of the exciton using a theoretical formalism which is based on the premise that the broadening of the excitonic transition is caused primarily by compositional fluctuations in a completely disordered alloy. The variation of the excitonic reduced mass thus derived is compared with that recently determined using a first-principles band structure calculation based on local density approximation.
The nature and origin of lateral composition modulations in (AlAs){sub m}(InAs){sub n} SPSs grown by MBE on InP substrates have been investigated by XRD, AFM, and TEM. Strong modulations were observed for growth temperatures between {approx} 540 and 560 C. The maximum strength of modulations was found for SPS samples with InAs mole fraction x (=n/(n+m)) close to {approx} 0.50 and when n {approx} m {approx} 2. The modulations were suppressed at both high and low values of x. For x >0.52 (global compression) the modulations were along the <100> directions in the (001) growth plane. For x < 0.52 (global tension) the modulations were along the two <310> directions rotated {approx} {+-} 27{degree} from [110] in the growth plane. The remarkably constant wavelength of the modulations, between {approx} 20--30 nm, and the different modulation directions observed, suggest that the origin of the modulations is due to surface roughening associated with the high misfit between the individual SPS layers and the InP substrate. Highly uniform unidirectional modulations have been grown, by control of the InAs mole fraction and growth on suitably offcut substrates, which show great promise for application in device structures.
The microstructure of lateral composition modulation in InAs/AlAs superlattices grown by MBE on InP is examined. The use of x-ray diffraction, TEM, AFM, and STEM to characterize the modulations is discussed. Combining the information from these techniques gives increased insight into the phenomenon and how to manipulate it. Diffraction measures the intensity of modulation and its wavelength, and is used to identify growth conditions giving strong modulation. The TEM and STEM analyses indicate that local compositions are modulated by as much as 0.38 InAs mole fraction. Plan-view images show that modulated structures consists of short ({approx_lt}0.2 {micro}m) In-rich wires with a 2D organization in a (001) growth plane. However, growth on miscut substrates can produce a single modulation along the miscut direction with much longer wires ({approx_gt}0.4 {micro}m), as desired for potential applications. Photoluminescence studies demonstrate that the modulation has large effects on the bandgap energy of the superlattice.
The variation of the value of the linewidth of an excitonic transition in InGaAsN alloys (1% and 2% nitrogen) as a function of hydrostatic pressure using photoluminescence spectroscopy is studied at 4 K. The excitonic linewidth increases as a function of pressure until about 100 kbar after which it tends to saturate. This pressure dependent excitonic linewidth is used to derive the pressure variation of the exciton reduced mass using a theoretical formalism based on the premise that the broadening of the excitonic transition is caused primarily by compositional fluctuations in a completely disordered alloy. The linewidth derived ambient pressure masses are compared and found to be in agreement with other mass measurements. The variation of this derived mass is compared with the results from a nearly first-principles approach in which calculations based on the local density approximation to the Kohn-Sham density functional theory are corrected using a small amount of experimental input.
InGaAsN alloys are a promising material for increasing the efficiency of multi-junction solar cells now used for satellite power systems. However, the growth of these dilute N containing alloys has been challenging with further improvements in material quality needed before the solar cell higher efficiencies are realized. Nitrogen/V ratios exceeding 0.981 resulted in lower N incorporation and poor surface morphologies. The growth rate was found to depend on not only the total group III transport for a fixed N/V ratio but also on the N/V ratio. Carbon tetrachloride and dimethylzinc were effective for p-type doping. Disilane was not an effective n-type dopant while SiCl4 did result in n-type material but only a narrow range of electron concentrations (2-5e17cm{sup -3}) were achieved.
This LDRD project explored the fundamental physics of a new class of photonic materials, photonic bandgap structures (PBG), and examine its unique properties for the design and implementation of photonic devices on a nano-meter length scale for the control and confinement of light. The low loss, highly reflective and quantum interference nature of a PBG material makes it one of the most promising candidates for realizing an extremely high-Q resonant cavity, >10,000, for optoelectronic applications and for the exploration of novel photonic physics, such as photonic localization, tunneling and modification of spontaneous emission rate. Moreover, the photonic bandgap concept affords us with a new opportunity to design and tailor photonic properties in very much the same way we manipulate, or bandgap engineer, electronic properties through modern epitaxy.
A new semiconductor alloy system, InGaAsN, has been identified as a can- didate material for multi junction solar cells having efficiencies greater than 40%. The introduction of small amounts of nitrogen ( 2%) into the InGaAs alloy system greatly reduces the band gap energy, with reductions approaching 0.4 eV for 2% nitrogen content With the appropriate ratio of indium to nitrogen concentrations, InGaAsN can be lattice matched to GaAs.
In the world of computer-based data acquisition and control, the graphical interface program LabVIEW from National Instruments is so ubiquitous that in many ways it has almost become the laboratory standard. To date, there have been approximately fifteen books concerning LabVIEW, but Professor Essick's treatise takes on a completely different tack than all of the previous discussions. In the more standard treatments of the ways and wherefores of LabVIEW such as LabVIEW Graphical Programming: Practical Applications in Instrumentation and Control by Gary W. Johnson (McGraw Hill, NY 1997), the emphasis has been instructing the reader how to program LabVIEW to create a Virtual Instrument (VI) on the computer for interfacing to a particular instruments. LabVIEW is written in G a graphical programming language developed by National Instruments. In the past the emphasis has been on training the experimenter to learn G . Without going into details here, G incorporates the usual loops, arithmetic expressions, etc., found in many programming languages, but in an icon (graphical) environment. The net result being that LabVIEW contains all of the standard methods needed for interfacing to instruments, data acquisition, data analysis, graphics, and also methodology to incorporate programs written in other languages into LabVIEW. Historically, according to Professor Essick, he developed a series of experiments for an upper division laboratory course for computer-based instrumentation. His observation was that while many students had the necessary background in computer programming languages, there were students who had virtually no concept about writing a computer program let alone a computer- based interfacing program. Thus the beginnings of a concept for not only teaching computer- based instrumentation techniques, but aiso a method for the beginner to experience writing a com- puter program. Professor Essick saw LabVIEW as the perfect environment in which to teach computer-based research skills. With this goal in mind, he has succeeded admirably. Advanced LabVIEW Labs presents a series of chapters devoted to not only introducing the reader to LabVIEW, but also to the concepts necessary for writing a successful computer pro- gram. Each chapter is an assignment for the student and is suitable for a ten week course. The first topic introduces the while loop and waveform chart VI'S. After learning how to launch LabVIEW, the student then leans how to use LabVIEW functions such as sine and cosine. The beauty of thk and subsequent chapters, the student is introduced immediately to computer-based instruction by learning how to display the results in graph form on the screen. At each point along the way, the student is not only introduced to another LabVIEW operation, but also to such subjects as spread sheets for data storage, numerical integration, Fourier transformations', curve fitting algorithms, etc. The last few chapters conclude with the purpose of the learning module, and that is, com- puter-based instrumentation. Computer-based laboratory projects such as analog-to-digital con- version, digitizing oscilloscopes treated. Advanced Lab VIEW Labs finishes with a treatment on GPIB interfacing and finally, the student is asked to create an operating VI for temperature con- trol. This is an excellent text, not only as an treatise on LabVIEW but also as an introduction to computer programming logic. All programmers, who are struggling to not only learning how interface computers to instruments, but also trying understand top down programming and other programming language techniques, should add Advanced Lab-VIEW Labs to their computer library.
The compound semiconductor system InGaAsN exhibits many intriguing properties which are particularly useful for the development of innovative high efficiency thin film solar cells and long wavelength lasers. The bandgap in these semiconductors can be varied by controlling the content of N and In and the thin films can yet be lattice-matched to GaAs. In the present work, x-ray absorption fine structure (XAFS) and grazing incidence x-ray scattering (GIXS) techniques have been employed to probe the local environment surrounding both N and In atoms as well as the interface morphology of InGaAsN thin films epitaxially grown on GaAs. The soft x-ray XAFS results around nitrogen K-edge reveal that N is in the sp{sup 3} hybridized bonding configuration in InGaAsN and GaAsN, suggesting that N impurities most likely substitute for As sites in these two compounds. The results of In K-edge XAFS suggest a possible trend of a slightly larger coordination number of As nearest neighbors around In atoms in InGaAsN samples with a narrower bandgap whereas the In-As interatomic distance remains practically the same as in InAs within the experimental uncertainties. These results combined suggest that N-substitution of the As sites plays an important role of bandgap-narrowing while in the meantime counteracting the compressive strain caused by In-doping. Grazing incidence x-ray scattering (GIXS) experiments verify that InGaAsN thin films can indeed form very smooth interfaces with GaAs yielding an average interfacial roughness of 5-20{angstrom}.
An experimental signature for detecting spontaneous lateral composition modulation in a (InAs){sub n}/(GaAs){sub n} short period superlattice on a InP substrate based on magnetoexciton spectroscopy is presented. The authors find by aligning the magnetic field in three crystallographic directions, one parallel to and the other two perpendicular to the composition modulation direction, that the magnetoexciton shifts are anisotropic and are a good indicator for the presence of composition modulation.
We present magnetoluminescence data which provides a quantitative measure of the energy- band dispersion curves of novel compound semiconductor optoelectronic materials. Data for a n-type strained-layer InGaAs/GaAs (quantum-well width approximately 8 nm) and a n-type 4.5 nm-wide GaAs/AlGaAs lattice-matched single-quantum well are presented. We find that the conduction-bands are almost parabolic, with a mass of about 0.068m0 for the GaAs/AlGaAs structure. The valence-bands are nonparabolic with wave vector dependent in- plane valence-band masses varying from about 0.1m0 at zone center to about 0.3m0 for 20 meV energies.
Photoluminescence measurements on ordered InGaP{sub 2} were studied as a function of temperature, laser power density, and magnetic field. The temperature varied between 1.4 and 300 K, the laser power densities ranged from 10 nW/cm{sup 2} to 20 W/cm{sup 2}, and the maximum magnetic field was 13.6 T. The data show both excitonic and band-to-band behavior, depending upon the incident laser power density. A consistent interpretation of all data leads to a type-II valence-band offset between the ordered domains.
Conduction and valence-band dispersion curves determined by magnetoluminescence are presented for n-type InGaAs/GaAs strained-single-quantum well structures. The magnetic field range was 0 to 30 tesla, and the temperature varied between 4.2 and 77.4 K.
Magnetoluminescence determined conduction-band and valence-band dispersion curves are presented for n-type InGaAs/GaAs stained-single-quantum well structures. The magnetic field range was 0 to 30 tesla, and the temperature varied between 4.2 and 77.4 K.