Heteroepitaxy of Dirac semimetal Cd3As2 by MOCVD
Abstract not provided.
Publications
Towards single-chip radiofrequency signal processing via acoustoelectric electron–phonon interactions
Nature Communications
The addition of active, nonlinear, and nonreciprocal functionalities to passive piezoelectric acoustic wave technologies could enable all-acoustic and therefore ultra-compact radiofrequency signal processors. Toward this goal, we present a heterogeneously integrated acoustoelectric material platform consisting of a 50 nm indium gallium arsenide epitaxial semiconductor film in direct contact with a 41° YX lithium niobate piezoelectric substrate. We then demonstrate three of the main components of an all-acoustic radiofrequency signal processor: passive delay line filters, amplifiers, and circulators. Heterogeneous integration allows for simultaneous, independent optimization of the piezoelectric-acoustic and electronic properties, leading to the highest performing surface acoustic wave amplifiers ever developed in terms of gain per unit length and DC power dissipation, as well as the first-ever demonstrated acoustoelectric circulator with an isolation of 46 dB with a pulsed DC bias. Finally, we describe how the remaining components of an all-acoustic radiofrequency signal processor are an extension of this work.
Heteroepitaxy of Dirac semimetal Cd3As2 by metal-organic chemical-vapor deposition
Journal of Crystal Growth
We present progress on the synthesis of semimetal Cd3As2 by metal–organic chemical-vapor deposition (MOCVD). Specifically, we have optimized the growth conditions needed to obtain technologically useful growth rates and acceptable thin-film microstructures, with our studies evaluating the effects of varying the temperature, pressure, and carrier-gas type for MOCVD of Cd3As2 when performed using dimethylcadmium and tertiarybutylarsine precursors. In the course of the optimization studies, exploratory Cd3As2 growths are attempted on GaSb substrates, strain-relaxed InAs buffer layers grown on GaSb substrates, and InAs substrates. Notably, only the InAs-terminated substrate surfaces yield desirable results. Extensive microstructural studies of Cd3As2 thin films on InAs are performed by using multiple advanced imaging microscopies and x-ray diffraction modalities. The studied films are 5–75 nm in thickness and consist of oriented, coalesced polycrystals with lateral domain widths of 30–80 nm. The most optimized films are smooth and specular, exhibiting a surface roughness as low as 1.0 nm rms. Under cross-sectional imaging, the Cd3As2-InAs heterointerface appears smooth and abrupt at a lower film thickness, ~30 nm, but becomes quite irregular as the average thickness increases to ~55 nm. The films are strain-relaxed with a residual biaxial tensile strain (εxx = +0.0010) that opposes the initially compressive lattice-mismatch strain of Cd3As2 coherent on InAs (εxx = −0.042). Importantly, phase-identification studies find a thin-film crystal structure consistent with the P42/nbc space group, placing MOCVD-grown Cd3As2 among the Dirac semimetals of substantial interest for topological quantum materials studies.
Acoustoelectric Surface Acoustic Wave Switch in An Epitaxial Ingaas on Lithium Niobate Heterostructure
21st International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2021
This work presents a 3-Port acoustoelectric switch design for surface acoustic wave signal processing. Using a multistrip coupler, the input acoustic wave at Port 1 is split into two parallel and electrically cross-linked acoustoelectric delay lines where an applied voltage can alter the gain and attenuation in each delay line based on the voltage polarity. The switch is demonstrated using a 270 MHz Leaky SAW mode on an InGaAs on 41° Y-cut lithium niobate heterostructure. Applying a +40 V voltage pulse results in an IL of -12.5 dB and -57.5 dB in the gain and isolation switch paths, respectively. This leads to a 45 dB difference in signal strength at the output ports.
Active Nonreciprocal and Nonlinear Surface Acoustic Wave Devices in a Heterogeneously Integrated InGaAs on Lithium Niobate Material Platform
Abstract not provided.
Transverse mode control of VCSELs using 3D-printed micro-optics
Abstract not provided.
Analyzing Custom Proof Masses and Quantum Limits of a Manufacturable Cavity Optical Levitation Solution
This report details results of a one-year LDRD to understand the dynamics, figures of merit, and fabrication possibilities for levitating a micro-scale, disk-shaped dielectric in an optical field. Important metrics are the stability, positional uncertainty, and required optical power to maintain levitation. Much of the results are contained in a publication written by our academic alliance collaborators. Initial structures were grown at Sandia labs and a test fabrication flow was executed. Owing to our strength in VCSEL lasers, we were particularly interested in calculations and fabrication flows that could be compatible with a VCSEL light source.
Enhancing Semiconductor Laser Performance Using 3D-Printed Microlenses
Abstract not provided.
CSAC and Deployable VCSELs
Abstract not provided.
Heterogeneous Integration of Silicon Electronics and Compound Semiconductor Optoelectronics for Miniature RF Photonic Transceivers
Abstract not provided.
Demonstration of an Acoustoelectric Surface Acoustic Wave Circulator
Abstract not provided.
Heterogeneous integration of silicon electronics and compound semiconductor optoelectronics for miniature rf photonic transceivers
ECS Transactions
Heterogeneous Integration (HI) may enable optoelectronic transceivers for short-range and long-range radio frequency (RF) photonic interconnect using wavelength-division multiplexing (WDM) to aggregate signals, provide galvanic isolation, and reduce crosstalk and interference. Integration of silicon Complementary Metal-Oxide-Semiconductor (CMOS) electronics with InGaAsP compound semiconductor photonics provides the potential for high-performance microsystems that combine complex electronic functions with optoelectronic capabilities from rich bandgap engineering opportunities, and intimate integration allows short interconnects for lower power and latency. The dominant pure-play foundry model plus the differences in materials and processes between these technologies dictate separate fabrication of the devices followed by integration of individual die, presenting unique challenges in die preparation, metallization, and bumping, especially as interconnect densities increase. In this paper, we describe progress towards realizing an S-band WDM RF photonic link combining 180 nm silicon CMOS electronics with InGaAsP integrated optoelectronics, using HI processes and approaches that scale into microwave and millimeter-wave frequencies.
Active and Nonreciprocal Radio-Frequency Acoustic Microsystems
Radio frequency (RF) devices are becoming more multi-band, increasing the number of filters and other front-end components while simultaneously pushing towards reduced cost, size, weight, and power (CSWaP). One approach to reducing CSWaP is to augment the achievable functionalities of electromechanical/acoustic filtering chips to include "active" and nonlinear functionalities, such as gain and mixing. The acoustoelectric (AE) effect could enable such active acoustic wave devices. We have examined the AE effect with a leaky surface acoustic wave (LSAW) in a monolithic structure of epitaxial indium gallium arsenide (In GaAs) on lithium niobate (LiNb0 3 ). This lead to experimentally demonstrated state-of-the-art SAW amplifier performance in terms of gain per acoustic wavelength, reduced power consumption, and increased power efficiency. We quantitatively compare the amplifier performance to previous notable works and discuss the outlook of active acoustic wave components using this material platform. Ultimately, this could lead to smaller, higher-performance RF signal processors for communications applications.
All-optical tuning of symmetry protected quasi bound states in the continuum
Applied Physics Letters
We demonstrate all-optical switching of high quality factor quasibound states in the continuum resonances in broken symmetry GaAs metasurfaces. By slightly breaking the symmetry of the GaAs nanoresonators, we enable leakage of symmetry protected bound states in the continuum (BICs) to free space that results in sharp spectral resonances with high quality factors of ∼500. We tune the resulting quasi-BIC resonances with ultrafast optical pumping at 800 nm and observe a 10 nm spectral blue shift of the resonance with pump fluences of less than 100 μJ cm-2. The spectral shift is achieved in an ultrafast time scale (<2.5 ps) and is caused by a shift in the refractive index mediated by the injection of free carriers into the GaAs resonators. An absolute reflectance change of 0.31 is measured with 150 μJ cm-2. Our results demonstrate a proof-of-concept that these broken symmetry metasurfaces can be modulated or switched at ultrafast switching speeds with higher contrast at low optical fluences (<100 μJ cm-2) than conventional Mie-metasurfaces.
Large Acoustoelectric Effect in Wafer Bonded Indium Gallium Arsenide / Lithium Niobate Heterostructure Augmented by Novel Gate Control
2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems and Eurosensors XXXIII, TRANSDUCERS 2019 and EUROSENSORS XXXIII
This paper demonstrates a monolithic surface acoustic wave amplifier fabricated by state-of-the-art heterogenous integration of a IH-V InGaAs-based epitaxial material stack and LiNb03. Due to the superior properties of the materials employed, we observe electron gain and also non-reciprocal gain in excess of 30dB with reduced power consumption. Additionally, we present a framework for performance optimization as a function of material parameters for a targeted gain. This platform enables further advances in active and non-reciprocal piezoelectric acoustic devices.
LARGE ACOUSTOELECTRIC EFFECT IN WAFER BONDED INDIUM GALLIUM ARSENIDE / LITHIUM NIOBATE HETEROSTRUCTURE AUGMENTED BY NOVEL GATE CONTROL
Abstract not provided.
All-optical tuning of fano resonances in broken symmetry GaAs metasurfaces
Optics InfoBase Conference Papers
We demonstrate ultrafast tuning of Fano resonances in a broken symmetry III-V metasurface using optical pumping. The resonance is spectrally shifted by 10 nm under low pump fluences of < 100 uJ·cm-2.
All-Semiconductor Coupled-Cavity VCSELs for Narrow Linewidth
Conference Digest - IEEE International Semiconductor Laser Conference
We demonstrate an all-semiconductor coupled-cavity VCSEL designed to achieve narrow linewidth at 850 nm. A resonant AlGaAs cavity of thickness 1,937 nm (8 wavelengths) is situated below the 3-quantum-well active region and results in an effective coupled-cavity length of 36 wavelengths.
All-Semiconductor Coupled-Cavity VCSELs for Narrow Linewidth
Abstract not provided.
Optical Tuning of Fano Resonances in Dielectric Metasurfaces
Abstract not provided.
Highly Nonlinear III-V Semiconductor Metasurfaces
Abstract not provided.
Highly Nonlinear III-V Semiconductor Metasurfaces
Abstract not provided.
Polarization-Dependent Second Harmonic Diffraction from Resonant GaAs Metasurfaces
ACS Photonics
Resonant semiconductor metasurfaces are an emerging versatile platform for nonlinear photonics. In this work, we investigate second-harmonic generation from metasurfaces consisting of two-dimensional square arrays of gallium arsenide nanocylinders as a function of the polarization of the fundamental wave. To this end, we perform nonlinear second harmonic microscopy, where the pump wavelength is tuned to the resonances of the metasurfaces. Furthermore, imaging the generated nonlinear signal in Fourier space allows us to analyze the spatial properties of the generated second harmonic. Our experiments reveal that the second harmonic is predominantly emitted into the first diffraction orders of the periodic arrangements, and that its intensity varies with the polarization angle of the fundamental wave. While this can be expected from the structure of the GaAs nonlinear tensor, the characteristics of this variation itself are found to depend on the pump wavelength. Interestingly, we show that the metasurface can reverse the polarization dependence of the second harmonic with respect to an unstructured GaAs wafer. These general observations are confirmed by numerical simulations using a simplified model for the metasurface. Our results provide valuable input for the development of metasurface-based classical and quantum light sources based on parametric processes.
Enhanced Second-Harmonic Generation Using Broken Symmetry III-V Semiconductor Fano Metasurfaces
ACS Photonics
All-dielectric metasurfaces, two-dimensional arrays of subwavelength low loss dielectric inclusions, can be used not only to control the amplitude and phase of optical beams, but also to generate new wavelengths through enhanced nonlinear optical processes that are free from some of the constraints dictated by the use of bulk materials. Recently, high quality factor (Q) resonances in these metasurfaces have been revealed and utilized for applications such as sensing and lasing. The origin of these resonances stems from the interference of two nanoresonator modes with vastly different Q. Here we show that nonlinear optical processes can be further enhanced by utilizing these high-Q resonances in broken symmetry all-dielectric metasurfaces. We study second harmonic generation from broken symmetry metasurfaces made from III-V semiconductors and observe nontrivial spectral shaping of second-harmonic and multifold efficiency enhancement induced by high field localization and enhancement inside the nanoresonators.
Highly Nonlinear III-V Semiconductor Metasurfaces
Abstract not provided.
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