Photocathodes based on GaAs and other III-V semiconductors are capable of producing highly spin-polarized electron beams. GaAs/GaAsP superlattice photocathodes exhibit high spin polarization; however, the quantum efficiency (QE) is limited to 1% or less. To increase the QE, we fabricated a GaAs/GaAsP superlattice photocathode with a Distributed Bragg Reflector (DBR) underneath. This configuration creates a Fabry-Pérot cavity between the DBR and GaAs surface, which enhances the absorption of incident light and, consequently, the QE. These photocathode structures were grown using molecular beam epitaxy and achieved record quantum efficiencies exceeding 15% and electron spin polarization of about 75% when illuminated with near-bandgap photon energies.
Here, the effects of gamma and proton irradiation, and of forward bias minority carrier injection, on photo-response were investigated for InAsSb/AlAsSb pBn mid-wave infrared (MWIR) detectors with an engineered majority-carrier barrier. Room-temperature gamma irradiation had an insignificant effect on 77 K photo-response. Gamma irradiation at 77 K detector temperature, however, decreased in situ photo-response by 19% after a cumulative dose of ~ 500 krad(Si). Subsequent forward bias minority carrier injection had no effect on photo-response. The 77 K detectors irradiated with 30 MeV protons up to 2 Mrad(Si) had photo-response degraded by up to 70%, but here forward bias minority carrier (hole) injection caused up to 12% recovery that persisted more than 30 min. These results suggest a mitigation strategy for maintaining the photo-response of similar detectors in radiation environments that cause displacement damage defects.
We demonstrate a monolithic all-epitaxial resonant-cavity architecture for long-wave infrared photodetectors with substrate-side illumination. An nBn detector with an ultra-thin (t ≈ 350 nm) absorber layer is integrated into a leaky resonant cavity, formed using semi-transparent highly doped (n + +) epitaxial layers, and aligned to the anti-node of the cavity's standing wave. The devices are characterized electrically and optically and demonstrate an external quantum efficiency of ∼25% at T = 180 K in an architecture compatible with focal plane array configurations.
We report on a two-step technique for post-bond III-V substrate removal involving precision mechanical milling and selective chemical etching. We show results on GaAs, GaSb, InP, and InAs substrates and from mm-scale chips to wafers.
We report on a two-step technique for post-bond III-V substrate removal involving precision mechanical milling and selective chemical etching. We show results on GaAs, GaSb, InP, and InAs substrates and from mm-scale chips to wafers.
InAs-based interband cascade lasers (ICLs) can be more easily adapted toward long wavelength operation than their GaSb counterparts. Devices made from two recent ICL wafers with an advanced waveguide structure are reported, which demonstrate improved device performance in terms of reduced threshold current densities for ICLs near 11 μm or extended operating wavelength beyond 13 μm. The ICLs near 11 μm yielded a significantly reduced continuous wave (cw) lasing threshold of 23 A/cm2 at 80 K with substantially increased cw output power, compared with previously reported ICLs at similar wavelengths. ICLs made from the second wafer incorporated an innovative quantum well active region, comprised of InAsP layers, and lased in the pulsed-mode up to 120 K at 13.2 μm, which is the longest wavelength achieved for III-V interband lasers.
Enhancing the efficiency of second-harmonic generation using all-dielectric metasurfaces to date has mostly focused on electromagnetic engineering of optical modes in the meta-atom. Further advances in nonlinear conversion efficiencies can be gained by engineering the material nonlinearities at the nanoscale, however this cannot be achieved using conventional materials. Semiconductor heterostructures that support resonant nonlinearities using quantum engineered intersubband transitions can provide this new degree of freedom. By simultaneously optimizing the heterostructures and meta-atoms, we experimentally realize an all-dielectric polaritonic metasurface with a maximum second-harmonic generation power conversion factor of 0.5 mW/W2 and power conversion efficiencies of 0.015% at nominal pump intensities of 11 kW/cm2. These conversion efficiencies are higher than the record values reported to date in all-dielectric nonlinear metasurfaces but with 3 orders of magnitude lower pump power. Our results therefore open a new direction for designing efficient nonlinear all-dielectric metasurfaces for new classical and quantum light sources.
Proceedings of SPIE - The International Society for Optical Engineering
Fredricksen, C.J.; Peale, R.E.; Dhakal, N.; Barrett, C.L.; Boykin II, O.; Maukonen, D.; Davis, L.; Ferarri, B.; Chernyak, L.; Zeidan, O.A.; Hawkins, Samuel D.; Klem, John F.; Krishna, Sanjay; Kazemi, Alireza; Schuler-Sandy, Ted
Effects of gamma and proton irradiation, and of forward bias minority carrier injection, on minority carrier diffusion and photoresponse were investigated for long-wave (LW) and mid-wave (MW) infrared detectors with engineered majoritycarrier barriers. The LWIR detector was a type-II GaSb/InAs strained-layer superlattice pBiBn structure. The MWIR detector was a InAsSb/AlAsSb nBp structure without superlattices. Room temperature gamma irradiations degraded the minority carrier diffusion length of the LWIR structure, and minority carrier injections caused dramatic improvements, though there was little effect from either treatment on photoresponse. For the MWIR detector, effects of room temperature gamma irradiation and injection on minority carrier diffusion and photoresponse were negligible. Subsequently, both types of detectors were subjected to gamma irradiation at 77 K. In-situ photoresponse was unchanged for the LWIR detectors, while that for the MWIR ones decreased 19% after cumulative dose of ~500 krad(Si). Minority carrier injection had no effect on photoresponse for either. The LWIR detector was then subjected to 4 Mrad(Si) of 30 MeV proton irradiation at 77 K, and showed a 35% decrease in photoresponse, but again no effect from forward bias injection. These results suggest that photoresponse of the LWIR detectors is not limited by minority carrier diffusion.
We discuss thinned InAsSb resonant infrared detectors that are designed to enable high quantum efficiency by using interleaved nanoantennas to read out two wavelengths from each pixel simultaneously.
Carrasco, Rigo A.; Morath, Christian P.; Grant, Perry C.; Ariyawansa, Gamini; Reyner, C.J.; Stephenson, Chad A.; Kadlec, Clark N.; Hawkins, Samuel D.; Klem, John F.; Steenbergen, Elizabeth H.; Schaefer, Stephen T.; Johnson, Shane R.; Zollner, S.; Webster, Preston T.
Gallium is incorporated into the strain-balanced In(Ga)As/InAsSb superlattice system to achieve the same mid-wave infrared cutoff tunability as conventional Ga-free InAs/InAsSb type-II superlattices, but with an additional degree of design freedom to enable optimization of absorption and transport properties. Time-resolved photoluminescence measurements of InGaAs/InAsSb superlattice characterization- and doped device structures are reported from 77 to 300 K and compared to InAs/InAsSb. The low-injection photoluminescence decay yields the minority carrier lifetime, which is analyzed with a recombination rate model, enabling the determination of the temperature-dependent Shockley-Read-Hall, radiative, and Auger recombination lifetimes and extraction of defect energy levels and capture cross section defect concentration products. The Shockley-Read-Hall-limited lifetime of undoped InGaAs/InAsSb is marginally reduced from 2.3 to 1.4 μs due to the inclusion of Ga; however, given that Ga improves the vertical hole mobility by a factor of >10×, a diffusion-limited InGaAs/InAsSb superlattice nBn could expect a lower bound of 2.5× improvement in diffusion length with significant impact on photodetector quantum efficiency and radiation hardness. At temperatures below 120 K, the doped device structures are Shockley-Read-Hall limited at 0.5 μs, which shows promise for detector applications.
Mie-resonant dielectric metasurfaces are excellent candidates for both fundamental studies related to light-matter interactions and for numerous applications ranging from holography to sensing to nonlinear optics. To date, however, most applications using Mie metasurfaces utilize only weak light-matter interaction. Here, we go beyond the weak coupling regime and demonstrate for the first time strong polaritonic coupling between Mie photonic modes and intersubband (ISB) transitions in semiconductor heterostructures. Furthermore, along with demonstrating ISB polaritons with Rabi splitting as large as 10%, we also demonstrate the ability to tailor the strength of strong coupling by engineering either the semiconductor heterostructure or the photonic mode of the resonators. Unlike previous plasmonic-based works, our new all-dielectric metasurface approach to generate ISB polaritons is free from ohmic losses and has high optical damage thresholds, thereby making it ideal for creating novel and compact mid-infrared light sources based on nonlinear optics.
We have fabricated and characterized AlInAsSb- and InPAsSb-absorber nBn infrared detectors with 200 K cutoff wavelengths from 2.55 to 3.25 μm. Minority-carrier lifetimes determined by microwave reflectance measurements were 0.2-1.0 μs in doped n-type absorber materials. Devices having 4 μm thick absorbers exhibited sharp cutoff at wavelengths of 2.9 μm or longer and softer cutoff at shorter wavelengths. Top-illuminated devices with n+ InAs window/contact layers had external quantum efficiencies of 40-50% without anti-reflection coating at 50 mV reverse bias and wavelengths slightly shorter than cutoff. Despite the shallow-etch mesa nBn design, perimeter currents contributed significantly to the 200 K dark current. Dark currents for InPAsSb devices were lower than AlInAsSb devices with similar cutoff wavelengths. For unoptimized InPAsSb devices with 2.55 μm cutoff, 200 K areal and perimeter dark current densities at -0.2 V bias in devices of various sizes were approximately 1x10-7 A/cm2 and 1.4x10-8 A/cm, respectively.
Quantum well intersubband polaritons are traditionally studied in large scale ensembles, over many wavelengths in size.In this presentation, we demonstrate that it is possible to detect and investigate intersubband polaritons in a single sub-wavelength nanoantenna in the IR frequency range. We observe polariton formation using a scattering-type near-fieldmicroscope and nano-FTIR spectroscopy. In this work, we will discuss near-field spectroscopic signatures of plasmonic antennae withand without coupling to the intersubband transition in quantum wells located underneath the antenna. Evanescent fieldamplitude spectra recorded on the antenna surface show a mode anti-crossing behavior in the strong coupling case. Wealso observe a corresponding strong-coupling signature in the phase of the detected field. We anticipate that this near-fieldapproach will enable explorations of strong and ultrastrong light-matter coupling in the single nanoantenna regime,including investigations of the elusive effect of ISB polariton condensation.