BeyondFingerprinting was a 2021-2024 Sandia Grand Challenge LDRD exploring the potential to develop new resilient materials and manufacturing processes by taking an artificial-intelligence (AI)-guided approach that integrates human-subject-matter expertise with algorithms enriched with physics-based constraints to unearth process-structure-property correlations. Such algorithms, trained on high-throughput experiments and simulations, are shown to serve as surrogate models that efficiently detect key “fingerprints” in materials data, prognose material performance, and guide effective process improvements. To accelerate broader adoption across mission areas, this AI-guided approach was demonstrated with three complex process-centric exemplars: electroplating, physical vapor deposition, and laser powder bed fusion. Together, these exemplars impact nearly every hardware component relevant to DOE and NNSA national security missions.
We present a high-level architecture for how artificial intelligences might advance and accumulate scientific and technological knowledge, inspired by emerging perspectives on how human intelligences advance and accumulate such knowledge. Agents advance knowledge by exercising a technoscientific method—an interacting combination of scientific and engineering methods. The technoscientific method maximizes a quantity we call “useful learning” via more-creative implausible utility (including the “aha!” moments of discovery), as well as via less-creative plausible utility. Society accumulates the knowledge advanced by agents so that other agents can incorporate and build on to make further advances. The proposed architecture is challenging but potentially complete: its execution might in principle enable artificial intelligences to advance and accumulate an equivalent of the full range of human scientific and technological knowledge.
In this report we detail demonstration of temperature dependent effects on grayscale intensity imaged in Focused Ion Beam (FIB) microscope, as well as secondary electron (SE) dependence on temperature in the Auger Electron Spectroscopy (AES) and a Scanning Electron Microscope (SEM). In each instrument an intrinsic silicon sample is imaged at multiple temperatures over the course of each experiment. The grayscale intensity is shown to scale with sample temperature. Sample preparation procedures are discussed, along with hypothesized explanations for unsuccessful trials. Anticipated outcomes and future directions for these measurements are also detailed.
