Publications

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Cryogenic plasma focused ion beam (PFIB) electron microscopy analysis is applied to visualizing ex situ (surface industrial) and in situ (subsurface geologic) carbonation products, to advance understanding of carbonation kinetics. Ex situ carbonation is investigated using NIST fly ash standard #2689 exposed to aqueous sodium bicarbonate solutions for brief periods of time. In situ carbonation pathways are investigated using volcanic flood basalt samples from Schaef et al. (2010) exposed to aqueous CO₂ solutions by them. The fly ash reaction products at room temperature show small amounts of incipient carbonation, with calcite apparently forming via surface nucleation. Reaction products at 75° C show beginning stages of an iron carbonate phase, e.g., siderite or ankerite, common phases in subsurface carbon sequestration environments. This may suggest an alternative to calcite in carbonation low calcium-bearing fly ashes. Flood basalt carbonation reactions show distinct zonation with high calcium and calcium-magnesium bearing zones alternating with high iron-bearing zones. The calcium-magnesium zones are notable with occurrence of localized pore space. Oscillatory zoning in carbonate minerals is distinctly associated with far-from-equilibrium conditions where local chemical environments fluctuate via a coupling of reaction with transport. The high porosity zones may reflect a precursor phase (e.g., aragonite) with higher molar volume that then “ripens” to the high-Mg calcite phase-plus-porosity. These observations reveal that carbonation can proceed with evolving local chemical environments, formation and disappearance of metastable phases, and evolving reactive surface areas. Together this work shows that future application of cryo-PFIB in carbonation studies would provide advanced understanding of kinetic mechanisms for optimizing industrial-scale and commercial-scale applications.

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A survey of cadmium plated field return hardware showed ubiquitous cadmium whisker growth. The most worn and debris-covered hardware showed the densest whisker growth. Whiskers were often found growing in agglomerates of nodules and whiskers. The hardware was rinsed with alcohol to transfer whiskers and debris from the hardware to a flat stub. Fifty whiskers were studied individually by scanning electron microscopy (SEM), including energy dispersive spectroscopy (EDS) and electron backscatter diffraction (EBSD). Most of the whiskers were single crystal, though three were found to contain grain boundaries at kinks. The whiskers ranged from 5 to 600 μm in length and 80 pct showed a <1 ¯ 2 1 ¯ 0> type growth direction. This growth direction facilitates the development of low energy side faces of the whisker, (0001) and {1010}.

Li metal anodes are enticing for batteries due to high theoretical charge storage capacity, but commercialization is plagued by dendritic Li growth and short circuits when cycled at high currents. Applied pressure has been suggested to improve morphology, and therefore performance. We hypothesized that increasing pressure would suppress dendritic growth at high currents. To test this hypothesis, here, we extensively use cryogenic scanning electron microscopy to show that varying the applied pressure from 0.01 to 1 MPa has little impact on Li morphology after one deposition. We show that pressure improves Li density and preserves Li inventory after 50 cycles. However, contrary to our hypothesis, pressure exacerbates dendritic growth through the separator, promoting short circuits. Therefore, we suspect Li inventory is better preserved in cells cycled at high pressure only because the shorts carry a larger portion of the current, with less being carried by electrochemical reactions that slowly consume Li inventory.

The freely available "Stopping and Range of Ions in Matter"(SRIM) code is used for evaluating ion beam ranges and depth profiles. We present secondary ion mass spectrometry and Rutherford backscattering experimental results of Si samples implanted with low energy Sb ions to evaluate the accuracy of SRIM simulations. We show that the SRIM simulation systematically overestimates the range by 2-6 nm and this overestimation increases for larger ion implantation energy. For the lowest energy implantation investigated, here we find up to a 25% error between the SRIM simulation and the measured range. The ion straggle shows excellent agreement between simulation and experimental results.

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In this work, we present a new Li source for focused ion beam applications. Based on an AuSi eutectic alloy, Li is added as an impurity to minimize effects from degradation when exposed to air. We show the source is stable over the course of an hour and spot sizes ≲10 nm can be achieved. The Li beam can achieve hundreds of nanometer ranges in semiconductors with minimal damage being generated along the path length. The source performance is evaluated through a high-resolution ion beam induced charge collection experiment on an Si-based detector. Further application of the source for ion beam analysis is numerically explored; the example investigated is based on probing a semiconductor heterostructure through a Rutherford backscattering experiment, where the Li beam can reveal information that is inaccessible with either low energy or high energy He projectiles used as probes.

Color centers (defect complexes such as SiV) in diamond have shown potential in fields ranging from metrology, cybersecurity to quantum computation. Demonstrations in these fields have pushed the envelope of state-of-the-art operations – for example, single photon sources (SPS) making use of SiV centers in diamond for quantum key distribution have demonstrated all the requirements for SPS operation including: (1) stable operation with second correlation function <<1, (2) electrically driven single photon emission and (3) compatibility with frequenc y conversion to telecommunication frequencies. To-date, however, all these demonstrations have been on lab-scale one-off devices. The key question behind how to deterministically fabricate these devices, namely activation yield has been overlooked. For context, Si based semiconductor devices are hugely successful because we have a high activation yield for implanted dopants. This is not yet true for diamond color centers. As currently understood, the color center yield is dominated by a lack of vacancies in the immediate area of the implantation. We propose to optimize the activation yield of color center using a combination of (1) focused single ion implantation with in-situ detection to count the number of implanted Si ions and (2) localized point defect (vacancy) creation using a focused Li ion beam to improve the yield. These experiments build on the unique capabilities of the SNL nanoImplanter (nI) to produce focused ion beam with spatial resolution of < 10 nm of both Si and Li ions. This work will also leverage our world-leading single ion implantation and detection capabilities.

In this study, we demonstrate creation of electroforming-free TaOx memristive devices using focused ion beam irradiations to locally define conductive filaments in TaOx films. Electrical characterization shows that these irradiations directly create fully functional memristors without the need for electroforming. Finally, ion beam forming of conductive filaments combined with state-of-the-art nano-patterning presents a CMOS compatible approach to wafer level fabrication of fully formed and operational memristors.

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The practical implementation of many quantum technologies relies on the development of robust and bright single photon sources that operate at room temperature. The negatively charged silicon-vacancy (SiV−) color center in diamond is a possible candidate for such a single photon source. However, due to the high refraction index mismatch to air, color centers in diamond typically exhibit low photon out-coupling. An additional shortcoming is due to the random localization of native defects in the diamond sample. Here we demonstrate deterministic implantation of Si ions with high conversion e ciency to single SiV− centers, targeted to fabricated nanowires. The co-localization of single SiV− centers with the nanostructures yields a ten times higher light coupling e ciency than for single SiV− centers in bulk diamond. This enhanced photon out-coupling, together with the intrinsic scalability of the SiV− creation method, enables a new class of devices for integrated photonics and quantum science.

We demonstrate a capability of deterministic doping at the single atom level using a combination of direct write focused ion beam and solid-state ion detectors. The focused ion beam system can position a single ion to within 35 nm of a targeted location and the detection system is sensitive to single low energy heavy ions. This platform can be used to deterministically fabricate single atom devices in materials where the nanostructure and ion detectors can be integrated, including donor-based qubits in Si and color centers in diamond.

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Deterministic control over the location and number of donors is crucial to donor spin quantum bits (qubits) in semiconductor based quantum computing. A focused ion beam is used to implant close to quantum dots. Ion detectors are integrated next to the quantum dots to sense the implants. The numbers of ions implanted can be counted to a precision of a single ion. Regular coulomb blockade is observed from the quantum dots. Charge offsets indicative of donor ionization, are observed in devices with counted implants.

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