Publications

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We used a micro-fabricated fused silica light guide plate to uniformly illuminate a GaAs photovoltaic array with a fiber-coupled 808 nm laser. Greater than 1 Watt of galvanically-isolated electrical power was generated from this compact edge-illuminated monochromatic photovoltaic module.

In this project we endeavored to improve the state-of-the-art in UV lasers diodes. We made important advancements in several fronts from modeling, to epitaxial growth, to fabrication, and testing. Throughout the project it became clear that polarization doping would be able to help advance the state of laser diode design in terms of electrical performance, but the optical design would need to be investigated to ensure that a 2D guided mode would be supported. New capability in optical modeling using commercial software demonstrated that the new polarization doped structures would be viable. New capability in pulsed testing was established to reach the current and voltage required. Our fabricated devices had some parasitic electrical paths which hindered performance that we were ultimately unable to overcome in the project timeframe. We do believe that future projects will be able to leverage the advancements made under this project.

We discuss thinned InAsSb resonant infrared detectors that are designed to enable high quantum efficiency by using interleaved nanoantennas to read out two wavelengths from each pixel simultaneously.

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Heterogeneous Integration (HI) may enable optoelectronic transceivers for short-range and long-range radio frequency (RF) photonic interconnect using wavelength-division multiplexing (WDM) to aggregate signals, provide galvanic isolation, and reduce crosstalk and interference. Integration of silicon Complementary Metal-Oxide-Semiconductor (CMOS) electronics with InGaAsP compound semiconductor photonics provides the potential for high-performance microsystems that combine complex electronic functions with optoelectronic capabilities from rich bandgap engineering opportunities, and intimate integration allows short interconnects for lower power and latency. The dominant pure-play foundry model plus the differences in materials and processes between these technologies dictate separate fabrication of the devices followed by integration of individual die, presenting unique challenges in die preparation, metallization, and bumping, especially as interconnect densities increase. In this paper, we describe progress towards realizing an S-band WDM RF photonic link combining 180 nm silicon CMOS electronics with InGaAsP integrated optoelectronics, using HI processes and approaches that scale into microwave and millimeter-wave frequencies.

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The design, fabrication, and performance of InGaAs and InGaP/GaAs microcells are presented. These cells are integrated with a Si wafer providing a path for insertion in hybrid concentrated photovoltaic modules. Comparisons are made between bonded cells and cells fabricated on their native wafer. The bonded cells showed no evidence of degradation in spite of the integration process that involved significant processing including the removal of the III-V substrate.

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Optical diagnostics play a central role in dynamic compression research. Currently, streak cameras are employed to record temporal and spectroscopic information in single-event experiments, yet are limited in several ways; the tradeoff between time resolution and total record duration is one such limitation. This project solves the limitations that streak cameras impose on dynamic compression experiments while reducing both cost and risk (equipment and labor) by utilizing standard high-speed digitizers and commercial telecommunications equipment. The missing link is the capability to convert the set of experimental (visible/x-ray) wavelengths to the infrared wavelengths used in telecommunications. In this report, we describe the problem we are solving, our approach, our results, and describe the system that was delivered to the customer. The system consists of an 8-channel visible-to-infrared converter with > 2 GHz 3-dB bandwidth.

A unique, micro-scale architecture is proposed to create a novel hybrid concentrated photovoltaic system. Micro-scale (sub-millimeter wide), multi-junction cells are attached to a large-area silicon cell backplane (several inches wide) that can optimally collect both direct and diffuse light. By using multi- junction III-V cells, we can get the highest possible efficiency of the direct light input. In addition, by collecting the diffuse light in the large-area silicon cell, we can produce power on cloudy days when the concentrating cells would have minimal output. Through the use of micro-scale cells and lenses, the overall assembly will provide higher efficiency than conventional concentrators and flat plates, while keeping the form factor of a flat plate module. This report describes the hybrid concept, the design of a prototype, including the PV cells and optics, and the experimental results.

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This talk will discuss recent work on photonic integration for applications in optical signal processing, digital logic, and fundamental device research with an emphasis on InP-based photonic integrated circuit technology. © 2015 OSA.

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In this paper we propose a stacked multi-junction solar cell design that allows the intimate contact of the individual cells while maintaining low resistive losses. The cell design is presented using an InGaP and GaAs multi-junction cell as an illustrative example. However, the methodologies presented in this paper can be applied to other III-V cell types including InGaAs and InGaAsP cells. The main benefits of the design come from making small cells, on the order of 2×10-3 cm2. Simulations showed that series resistances should be kept to less than 5 ω for devices up to 400 μm in diameter to keep resistance power losses to less than 1%. Low resistance AuBe/Ni/Au ohmic contacts to n-type InGaP are also demonstrated with contact resistivity of 5×10-6 ωcm-2 when annealed at 420°C. © 2013 IEEE.

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