Since the discovery of the laser, optical nonlinearities have been at the core of efficient light conversion sources. Typically, thick transparent crystals or quasi-phase matched waveguides are utilized in conjunction with phase-matching techniques to select a single parametric process. In recent years, due to the rapid developments in artificially structured materials, optical frequency mixing has been achieved at the nanoscale in subwavelength resonators arrayed as metasurfaces. Phase matching becomes relaxed for these wavelength-scale structures, and all allowed nonlinear processes can, in principle, occur on an equal footing. This could promote harmonic generation via a cascaded (consisting of several frequency mixing steps) process. However, so far, all reported work on dielectric metasurfaces have assumed frequency mixing from a direct (single step) nonlinear process. In this work, we prove the existence of cascaded second-order optical nonlinearities by analyzing the second- and third-wave mixing from a highly nonlinear metasurface in conjunction with polarization selection rules and crystal symmetries. We find that the third-wave mixing signal from a cascaded process can be of comparable strength to that from conventional third-harmonic generation and that surface nonlinearities are the dominant mechanism that contributes to cascaded second-order nonlinearities in our metasurface.
Silicon is a promising candidate as a next generation anode to replace or complement graphite electrodes due to its high energy density and low lithiation potential. When silicon is lithiated, it experiences over 300% expansion which stresses the silicon as well as its solid electrolyte interphase (SEI) leading to poor performance. The use of nano-sized silicon has helped to mitigate volume expansion and stress in the silicon, yet the silicon SEI is still both mechanically and chemically unstable. Identifying the mechanical failure mechanism of the SEI will help enhance calendar and cycle life performance through improved SEI design. In situ moiré interferometry was investigated to try and track the in-plane strain in the SEI and silicon electrode for this purpose. Moiré can detect on the order of 10 nm changes in displacement and is therefore a useful tool in the measurement of strain. As the sample undergoes small deformations, large changes in the moiré fringe allow for measurements of displacement below the diffraction limit of light. Figure 1a shows how the moiré fringe changes as the sample grating deforms. As the sample contracts or expands, the frequency of the moiré fringe changes, and this change is proportional to the strain in the sample.
This report details results of a one-year LDRD to understand the dynamics, figures of merit, and fabrication possibilities for levitating a micro-scale, disk-shaped dielectric in an optical field. Important metrics are the stability, positional uncertainty, and required optical power to maintain levitation. Much of the results are contained in a publication written by our academic alliance collaborators. Initial structures were grown at Sandia labs and a test fabrication flow was executed. Owing to our strength in VCSEL lasers, we were particularly interested in calculations and fabrication flows that could be compatible with a VCSEL light source.
We report experimental and numerical developments extending the operating range of vanadium dioxide based optical limiters into the short-wavelength infrared. Pixelated sensor elements have been fabricated which show optically-triggered limiting of a 2.7 µm probe.
Heterogeneous Integration (HI) may enable optoelectronic transceivers for short-range and long-range radio frequency (RF) photonic interconnect using wavelength-division multiplexing (WDM) to aggregate signals, provide galvanic isolation, and reduce crosstalk and interference. Integration of silicon Complementary Metal-Oxide-Semiconductor (CMOS) electronics with InGaAsP compound semiconductor photonics provides the potential for high-performance microsystems that combine complex electronic functions with optoelectronic capabilities from rich bandgap engineering opportunities, and intimate integration allows short interconnects for lower power and latency. The dominant pure-play foundry model plus the differences in materials and processes between these technologies dictate separate fabrication of the devices followed by integration of individual die, presenting unique challenges in die preparation, metallization, and bumping, especially as interconnect densities increase. In this paper, we describe progress towards realizing an S-band WDM RF photonic link combining 180 nm silicon CMOS electronics with InGaAsP integrated optoelectronics, using HI processes and approaches that scale into microwave and millimeter-wave frequencies.
We numerically analyze the role of carrier mobility in transparent conducting oxides in epsilon-near-zero phase modulators. High-mobility materials such as cadmium oxide enable compact photonic phase modulators with a modulation figure of merit >29 º/dB.
We demonstrate an all-semiconductor coupled-cavity VCSEL designed to achieve narrow linewidth at 850 nm. A resonant AlGaAs cavity of thickness 1,937 nm (8 wavelengths) is situated below the 3-quantum-well active region and results in an effective coupled-cavity length of 36 wavelengths.
In this paper, we analyze a compact silicon photonic phase modulator at 1.55 μm using epsilon-near-zero transparent conducting oxide (TCO) films. The operating principle of the non-resonant phase modulator is field-effect carrier density modulation in a thin TCO film deposited on top of a passive silicon waveguide with a CMOS-compatible fabrication process. We compare phase modulator performance using both indium oxide (In2O3) and cadmium oxide (CdO) TCO materials. Our findings show that practical phase modulation can be achieved only when using high-mobility (i.e. low-loss) epsilon-near-zero materials such as CdO. The CdO-based phase modulator has a figure of merit of 17.1°/dB in a compact 5 μm length. This figure of merit can be increased further through the proper selection of high-mobility TCOs, opening a path for device miniaturization and increased phase shifts.