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Hybrid Integration of III-V Solar Microcells for High-Efficiency Concentrated Photovoltaic Modules

IEEE Journal of Selected Topics in Quantum Electronics

Tauke-Pedretti, Anna; Cederberg, Jeffrey G.; Cruz-Campa, Jose L.; Alford, Charles A.; Sanchez, Carlos A.; Nielson, Gregory N.; Okandan, Murat; Sweatt, W.C.; Jared, Bradley H.; Saavedra, Michael; Miller, William; Keeler, Gordon A.; Paap, Scott M.; Mudrick, John; Lentine, Anthony; Resnick, Paul; Gupta, Vipin; Nelson, Jeffrey; Li, Lan; Li, Duanhui; Gu, Tian; Hu, Juejun

The design, fabrication, and performance of InGaAs and InGaP/GaAs microcells are presented. These cells are integrated with a Si wafer providing a path for insertion in hybrid concentrated photovoltaic modules. Comparisons are made between bonded cells and cells fabricated on their native wafer. The bonded cells showed no evidence of degradation in spite of the integration process that involved significant processing including the removal of the III-V substrate.

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Ultrafast all-optical tuning of direct-gap semiconductor metasurfaces

Nature Communications

Shcherbakov, Maxim R.; Liu, Sheng L.; Zubyuk, Varvara V.; Vaskin, Aleksandr; Vabishchevich, Polina P.; Keeler, Gordon A.; Pertsch, Thomas; Dolgova, Tatyana V.; Staude, Isabelle; Brener, Igal B.; Fedyanin, Andrey A.

Optical metasurfaces are regular quasi-planar nanopatterns that can apply diverse spatial and spectral transformations to light waves. However, metasurfaces are no longer adjustable after fabrication, and a critical challenge is to realise a technique of tuning their optical properties that is both fast and efficient. We experimentally realise an ultrafast tunable metasurface consisting of subwavelength gallium arsenide nanoparticles supporting Mie-type resonances in the near infrared. Using transient reflectance spectroscopy, we demonstrate a picosecond-scale absolute reflectance modulation of up to 0.35 at the magnetic dipole resonance of the metasurfaces and a spectral shift of the resonance by 30 nm, both achieved at unprecedentedly low pump fluences of less than 400 μJ cm-2. Our findings thereby enable a versatile tool for ultrafast and efficient control of light using light.

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Optomechanical spring effect readout in resonant micro-optical Sagnac gyroscopes design and scaling analysis

International Conference on Optical MEMS and Nanophotonics

Grine, Alejandro J.; Siddiqui, A.; Keeler, Gordon A.; Shaw, M.J.; Eichenfield, Matthew S.; Friedmann, Thomas A.; Douglas, Erica A.; Wood, M.G.; Dagel, D.J.; Hains, C.; Koch, L.F.; Nordquist, C.D.; Serkland, Darwin K.

We propose and theoretically analyze a new cavity optomechanical oscillator gyroscope. Mechanical frequency acts as a sensitive readout of rotation through the optomechanical spring and Sagnac effects. Remarkably, reducing device size improves scale factor.

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Submicrometer Epsilon-Near-Zero Electroabsorption Modulators Enabled by High-Mobility Cadmium Oxide

IEEE Photonics Journal

Campione, Salvatore; Wood, Michael G.; Serkland, Darwin K.; Parameswaran, Sivasubramanian P.; Ihlefeld, Jon I.; Luk, Ting S.; Wendt, J.R.; Geib, Kent M.; Keeler, Gordon A.

Epsilon-near-zero materials provide a new path for tailoring light-matter interactions at the nanoscale. In this paper, we analyze a compact electroabsorption modulator based on epsilon-near-zero confinement in transparent conducting oxide films. The nonresonant modulator operates through field-effect carrier density tuning. We compare the performance of modulators composed of two different conducting oxides, namely, indium oxide (In2O3) and cadmium oxide (CdO), and show that better modulation performance is achieved when using high-mobility (i.e., low loss) epsilon-near-zero materials such as CdO. In particular, we show that nonresonant electroabsorption modulators with submicron lengths and greater than 5 dB extinction ratios may be achieved through the proper selection of high-mobility transparent conducting oxides, opening a path for device miniaturization and increased modulation depth.

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Resonantly enhanced infrared detectors based on type-II superlattice absorbers

Goldflam, Michael G.; Goldflam, Michael G.; Campione, Salvatore; Campione, Salvatore; Kadlec, Emil A.; Kadlec, Emil A.; Hawkins, Samuel D.; Hawkins, Samuel D.; Coon, Wesley T.; Coon, Wesley T.; Fortune, Torben R.; Fortune, Torben R.; Parameswaran, Sivasubramanian P.; Parameswaran, Sivasubramanian P.; Keeler, Gordon A.; Keeler, Gordon A.; Klem, John F.; Klem, John F.; Tauke-Pedretti, Anna; Tauke-Pedretti, Anna; Shaner, Eric A.; Shaner, Eric A.; Davids, Paul D.; Davids, Paul D.; Warne, Larry K.; Warne, Larry K.; Wendt, J.R.; Wendt, J.R.; Kim, Jin K.; Kim, Jin K.; Peters, D.W.; Peters, D.W.

Abstract not provided.

Huygens' Metasurfaces Enabled by Magnetic Dipole Resonance Tuning in Split Dielectric Nanoresonators

Nano Letters

Liu, Sheng L.; Vaskin, Aleksandr; Campione, Salvatore; Wolf, Omri; Sinclair, Michael B.; Reno, J.L.; Keeler, Gordon A.; Staude, Isabelle; Brener, Igal B.

Dielectric metasurfaces that exploit the different Mie resonances of nanoscale dielectric resonators are a powerful platform for manipulating electromagnetic fields and can provide novel optical behavior. In this work, we experimentally demonstrate independent tuning of the magnetic dipole resonances relative to the electric dipole resonances of split dielectric resonators (SDRs). By increasing the split dimension, we observe a blue shift of the magnetic dipole resonance toward the electric dipole resonance. Therefore, SDRs provide the ability to directly control the interaction between the two dipole resonances within the same resonator. For example, we achieve the first Kerker condition by spectrally overlapping the electric and magnetic dipole resonances and observe significantly suppressed backward scattering. Moreover, we show that a single SDR can be used as an optical nanoantenna that provides strong unidirectional emission from an electric dipole source.

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Next-generation infrared focal plane arrays for high-responsivity low-noise applications

IEEE Aerospace Conference Proceedings

Goldflam, Michael G.; Hawkins, Samuel D.; Parameswaran, Sivasubramanian P.; Tauke-Pedretti, Anna; Warne, Larry K.; Peters, D.W.; Campione, Salvatore; Coon, W.T.; Keeler, Gordon A.; Shaner, Eric A.; Wendt, J.R.; Kadlec, Emil A.; Fortune, Torben R.; Klem, John F.; Davids, Paul D.; Kim, Jin K.

High-quality infrared focal plane arrays (FPAs) are used in many satellite, astronomical, and terrestrial applications. These applications require highly-sensitive, low-noise FPAs, and therefore do not benefit from advances made in low-cost thermal imagers where reducing cost and enabling high-temperature operation drive device development. Infrared detectors used in FPAs have been made for decades from alloys of mercury cadmium telluride (MCT). These infrared detectors are nearing the believed limit of their performance. This limit, known in the infrared detector community as Rule 07, dictates the dark current floor for MCT detectors, in their traditional architecture, for a given temperature and cutoff wavelength. To overcome the bounds imposed by Rule 07, many groups are working on detector compounds other than MCT. We focus on detectors employing III-V-based gallium-free InAsSb superlattice active regions while also changing the basic architecture of the pixel to improve signal-to-noise. Our architecture relies on a resonant, metallic, subwavelength nanoantenna patterned on the absorber surface, in combination with a Fabry-Pérot cavity, to couple the incoming radiation into tightly confined modes near the nanoantenna. This confinement of the incident energy in a thin layer allows us to greatly reduce the volume of the absorbing layer to a fraction of the free-space wavelength, yielding a corresponding reduction in dark current from spontaneously generated electron-hole pairs in the absorber material. This architecture is detector material agnostic and could be applied to MCT detector structures as well, although we focus on using superlattice antimonide-based detector materials. This detector concept has been applied to both mid-wave (3-5 μm) and longwave (8-12 μm) infrared detectors and absorbers. Here we examine long-wave devices, as these detectors currently have a larger gap between desired device performance and that of currently existing detectors. The measured structures show an external quantum efficiency exceeding 50%. We present a comparison of the modeled and measured photoresponse of these detectors and compare these detectors to currently available commercial detectors using relevant metrics such as external quantum efficiency. We also discuss modeling of crosstalk between adjacent pixels and its influence on the potential for a dual-wavelength detector. Finally, we evaluate potential advances in these detectors that may occur in the near future.

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III-V dielectric metasurfaces: Enhanced nonlinearities and emission control

Optics InfoBase Conference Papers

Liu, Sheng L.; Vaskin, Aleksandr; Vabishchevich, Polina V.; Addamane, Sadhvikas; Keeler, Gordon A.; Reno, J.L.; Yang, Yuanmu Y.; Staude, Isabelle; Balarishnan, Ganesh; Sinclair, Michael B.; Brener, Igal B.

Using III-V dielectric metasurfaces, we experimentally demonstrate resonantly enhanced harmonic generations up to the 4th order. Moreover, we observe large enhancements and spectral tailoring of the photoluminescence of quantum dots embedded inside dielectric metasurfaces. © OSA 2017.

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Broken Symmetry Dielectric Resonators for High Quality Factor Fano Metasurfaces

ACS Photonics

Campione, Salvatore; Liu, Sheng L.; Basilio, Lorena I.; Warne, Larry K.; Langston, William L.; Luk, Ting S.; Wendt, J.R.; Reno, J.L.; Keeler, Gordon A.; Brener, Igal; Sinclair, Michael B.

We present a new approach to dielectric metasurface design that relies on a single resonator per unit cell and produces robust, high quality factor Fano resonances. Our approach utilizes symmetry breaking of highly symmetric resonator geometries, such as cubes, to induce couplings between the otherwise orthogonal resonator modes. In particular, we design perturbations that couple "bright" dipole modes to "dark" dipole modes whose radiative decay is suppressed by local field effects in the array. Our approach is widely scalable from the near-infrared to radio frequencies. We first unravel the Fano resonance behavior through numerical simulations of a germanium resonator-based metasurface that achieves a quality factor of ∼1300 at ∼10.8 μm. Then, we present two experimental demonstrations operating in the near-infrared (∼1 μm): a silicon-based implementation that achieves a quality factor of ∼350; and a gallium arsenide-based structure that achieves a quality factor of ∼600, the highest near-infrared quality factor experimentally demonstrated to date with this kind of metasurface. Importantly, large electromagnetic field enhancements appear within the resonators at the Fano resonant frequencies. We envision that combining high quality factor, high field enhancement resonances with nonlinear and active/gain materials such as gallium arsenide will lead to new classes of active optical devices.

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Enhanced infrared detectors using resonant structures combined with thin type-II superlattice absorbers

Applied Physics Letters

Goldflam, Michael G.; Kadlec, Emil A.; Olson, B.V.; Klem, John F.; Hawkins, Samuel D.; Parameswaran, Sivasubramanian P.; Coon, W.T.; Keeler, Gordon A.; Fortune, Torben R.; Tauke-Pedretti, Anna; Wendt, J.R.; Shaner, Eric A.; Davids, Paul D.; Kim, Jin K.; Peters, D.W.

We examined the spectral responsivity of a 1.77 μm thick type-II superlattice based long-wave infrared detector in combination with metallic nanoantennas. Coupling between the Fabry-Pérot cavity formed by the semiconductor layer and the resonant nanoantennas on its surface enables spectral selectivity, while also increasing peak quantum efficiency to over 50%. Electromagnetic simulations reveal that this high responsivity is a direct result of field-enhancement in the absorber layer, enabling significant absorption in spite of the absorber's subwavelength thickness. Notably, thinning of the absorbing material could ultimately yield lower photodetector noise through a reduction in dark current while improving photocarrier collection efficiency. The temperature- and incident-angle-independent spectral response observed in these devices allows for operation over a wide range of temperatures and optical systems. This detector paradigm demonstrates potential benefits to device performance with applications throughout the infrared.

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2D and 3D all dielectric metamaterials made from III-V semiconductors

2016 Conference on Lasers and Electro-Optics, CLEO 2016

Liu, Sheng L.; Keeler, Gordon A.; Reno, J.L.; Sinclair, Michael B.; Brener, Igal B.

We present all-dielectric 2D and 3D metamaterials that are monolithically fabricated from III-V semiconductor nanostructures. The active/gain and high optical nonlinearity properties of the metamaterials can lead to new classes of active devices.

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Efficient second harmonic generation from GaAs all-dielectric metasurfaces

2016 Conference on Lasers and Electro-Optics, CLEO 2016

Liu, Sheng L.; Keeler, Gordon A.; Reno, J.L.; Yang, Yuanmu Y.; Sinclair, Michael B.; Brener, Igal B.

We experimentally observe large enhancement of second-harmonic generation (SHG) from GaAs metasurfaces. The SHG polarization when excited at the electric and magnetic dipole resonances is orthogonal and can be attributed to different nonlinear generation mechanisms.

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Resonantly Enhanced Second-Harmonic Generation Using III-V Semiconductor All-Dielectric Metasurfaces

Nano Letters

Liu, Sheng L.; Sinclair, Michael B.; Saravi, Sina; Keeler, Gordon A.; Yang, Yuanmu Y.; Reno, J.L.; Peake, Gregory M.; Setzpfandt, Frank; Staude, Isabelle; Pertsch, Thomas; Brener, Igal B.

Nonlinear optical phenomena in nanostructured materials have been challenging our perceptions of nonlinear optical processes that have been explored since the invention of lasers. For example, the ability to control optical field confinement, enhancement, and scattering almost independently allows nonlinear frequency conversion efficiencies to be enhanced by many orders of magnitude compared to bulk materials. Also, the subwavelength length scale renders phase matching issues irrelevant. Compared with plasmonic nanostructures, dielectric resonator metamaterials show great promise for enhanced nonlinear optical processes due to their larger mode volumes. Here, we present, for the first time, resonantly enhanced second-harmonic generation (SHG) using gallium arsenide (GaAs) based dielectric metasurfaces. Using arrays of cylindrical resonators we observe SHG enhancement factors as large as 104 relative to unpatterned GaAs. At the magnetic dipole resonance, we measure an absolute nonlinear conversion efficiency of ∼2 × 10-5 with ∼3.4 GW/cm2 pump intensity. The polarization properties of the SHG reveal that both bulk and surface nonlinearities play important roles in the observed nonlinear process.

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Results 1–25 of 75
Results 1–25 of 75