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Demonstration of >6.0-kV Breakdown Voltage in Large Area Vertical GaN p-n Diodes With Step-Etched Junction Termination Extensions

IEEE Transactions on Electron Devices

Yates, Luke; Gunning, Brendan P.; Crawford, Mary H.; Steinfeldt, Jeffrey A.; Smith, Michael L.; Abate, Vincent M.; Dickerson, Jeramy; Armstrong, Andrew A.; Binder, Andrew; Allerman, A.A.; Kaplar, Robert

Vertical gallium nitride (GaN) p-n diodes have garnered significant interest for use in power electronics where high-voltage blocking and high-power efficiency are of concern. In this article, we detail the growth and fabrication methods used to develop a large area (1 mm2) vertical GaN p-n diode capable of a 6.0-kV breakdown. We also demonstrate a large area diode with a forward pulsed current of 3.5 A, an 8.3-mΩ·cm2 differential specific ON-resistance, and a 5.3-kV reverse breakdown. In addition, we report on a smaller area diode (0.063 mm2) that is capable of 6.4-kV breakdown with a differential specific ON-resistance of 10.2 m·Ω·cm2, when accounting for current spreading through the drift region at a 45° angle. Finally, the demonstration of avalanche breakdown is shown for a 0.063-mm2 diode with a room temperature breakdown of 5.6 kV. These results were achieved via epitaxial growth of a 50-μm drift region with a very low carrier concentration of < 1×1015 cm-3 and a carefully designed four-zone junction termination extension.

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TYPE Journal Article YEAR 2022
DOIOSTIScopus

Progress in Fabrication and Characterization of Vertical GaN Power Devices (invited)

Kaplar, Robert; Binder, Andrew; Crawford, Mary H.; Allerman, A.A.; Gunning, Brendan P.; Flicker, Jack D.; Yates, Luke; Armstrong, Andrew A.; Dickerson, Jeramy; Glaser, Caleb E.; Steinfeldt, Jeffrey A.; Abate, Vincent M.; Smith, Michael L.; Pickrell, Gregory W.; Sharps, Paul; Anderson, T.; Gallagher, J.; Jacobs, A.G.; Koehler, A.; Tadjer, M.; Hobart, K.; Hite, J.; Ebrish, M.; Porter, M.; Zeng, K.; Chowdhury, S.; Ji, D.; Aktas, O.; Cooper, James A.

Abstract not provided.

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TYPE Conference Presentation YEAR 2022
DOIOSTI

Recent Progress in Vertical Gallium Nitride Power Devices

Kaplar, Robert; Allerman, A.A.; Crawford, Mary H.; Gunning, Brendan P.; Flicker, Jack D.; Armstrong, Andrew A.; Yates, Luke; Dickerson, Jeramy; Binder, Andrew; Abate, Vincent M.; Smith, Michael L.; Pickrell, Gregory W.; Sharps, Paul; Neely, Jason C.; Rashkin, Lee J.; Gill, Lee; Goodrick, Kyle; Anderson, T.; Gallagher, J.; Jacobs, A.G.; Koehler, A.; Tadjer, M.; Hobart, K.; Hite, J.; Ebrish, M.; Porter, M.; Zeng, K.; Chowdhury, S.; Ji, D.; Aktas, O.; Cooper, James A.

Abstract not provided.

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TYPE Conference Presentation YEAR 2021
DOIOSTI

High-Brightness Ultraviolet Lasers for Leap-Ahead National Security Applications

Skogen, Erik J.; Fortuna, Seth A.; Allerman, A.A.; Smith, Michael L.; Alford, Charles; Crawford, Mary H.

In this project we endeavored to improve the state-of-the-art in UV lasers diodes. We made important advancements in several fronts from modeling, to epitaxial growth, to fabrication, and testing. Throughout the project it became clear that polarization doping would be able to help advance the state of laser diode design in terms of electrical performance, but the optical design would need to be investigated to ensure that a 2D guided mode would be supported. New capability in optical modeling using commercial software demonstrated that the new polarization doped structures would be viable. New capability in pulsed testing was established to reach the current and voltage required. Our fabricated devices had some parasitic electrical paths which hindered performance that we were ultimately unable to overcome in the project timeframe. We do believe that future projects will be able to leverage the advancements made under this project.

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TYPE SAND Report YEAR 2021
DOIOSTI
Results 1–25 of 35
Results 1–25 of 35