Publications

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We report on a two-step technique for post-bond III-V substrate removal involving precision mechanical milling and selective chemical etching. We show results on GaAs, GaSb, InP, and InAs substrates and from mm-scale chips to wafers.

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Since the discovery of the laser, optical nonlinearities have been at the core of efficient light conversion sources. Typically, thick transparent crystals or quasi-phase matched waveguides are utilized in conjunction with phase-matching techniques to select a single parametric process. In recent years, due to the rapid developments in artificially structured materials, optical frequency mixing has been achieved at the nanoscale in subwavelength resonators arrayed as metasurfaces. Phase matching becomes relaxed for these wavelength-scale structures, and all allowed nonlinear processes can, in principle, occur on an equal footing. This could promote harmonic generation via a cascaded (consisting of several frequency mixing steps) process. However, so far, all reported work on dielectric metasurfaces have assumed frequency mixing from a direct (single step) nonlinear process. In this work, we prove the existence of cascaded second-order optical nonlinearities by analyzing the second- and third-wave mixing from a highly nonlinear metasurface in conjunction with polarization selection rules and crystal symmetries. We find that the third-wave mixing signal from a cascaded process can be of comparable strength to that from conventional third-harmonic generation and that surface nonlinearities are the dominant mechanism that contributes to cascaded second-order nonlinearities in our metasurface.

Silicon is a promising candidate as a next generation anode to replace or complement graphite electrodes due to its high energy density and low lithiation potential. When silicon is lithiated, it experiences over 300% expansion which stresses the silicon as well as its solid electrolyte interphase (SEI) leading to poor performance. The use of nano-sized silicon has helped to mitigate volume expansion and stress in the silicon, yet the silicon SEI is still both mechanically and chemically unstable. Identifying the mechanical failure mechanism of the SEI will help enhance calendar and cycle life performance through improved SEI design. In situ moiré interferometry was investigated to try and track the in-plane strain in the SEI and silicon electrode for this purpose. Moiré can detect on the order of 10 nm changes in displacement and is therefore a useful tool in the measurement of strain. As the sample undergoes small deformations, large changes in the moiré fringe allow for measurements of displacement below the diffraction limit of light. Figure 1a shows how the moiré fringe changes as the sample grating deforms. As the sample contracts or expands, the frequency of the moiré fringe changes, and this change is proportional to the strain in the sample.

We report experimental and numerical developments extending the operating range of vanadium dioxide based optical limiters into the short-wavelength infrared. Pixelated sensor elements have been fabricated which show optically-triggered limiting of a 2.7 µm probe.

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This report details results of a one-year LDRD to understand the dynamics, figures of merit, and fabrication possibilities for levitating a micro-scale, disk-shaped dielectric in an optical field. Important metrics are the stability, positional uncertainty, and required optical power to maintain levitation. Much of the results are contained in a publication written by our academic alliance collaborators. Initial structures were grown at Sandia labs and a test fabrication flow was executed. Owing to our strength in VCSEL lasers, we were particularly interested in calculations and fabrication flows that could be compatible with a VCSEL light source.

We present an optical wavelength division multiplexer enabled by a ring resonator tuned by MEMS electrostatic actuation. Analytical analysis, simulation and fabrication are discussed leading to results showing controlled tuning greater than one FSR.

We present an optical wavelength division multiplexer enabled by a ring resonator tuned by MEMS electrostatic actuation. Analytical analysis, simulation and fabrication are discussed leading to results showing controlled tuning greater than one FSR.

We present an empirical methodology for thermally characterizing and determining absorption and scattering losses in released ring whisper gallery mode optical resonators. We used the methodology to deduce absorption and scattering contributions in Q = 308,000 silicon nitride resonators coupled to on-chip waveguides.

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Heterogeneous Integration (HI) may enable optoelectronic transceivers for short-range and long-range radio frequency (RF) photonic interconnect using wavelength-division multiplexing (WDM) to aggregate signals, provide galvanic isolation, and reduce crosstalk and interference. Integration of silicon Complementary Metal-Oxide-Semiconductor (CMOS) electronics with InGaAsP compound semiconductor photonics provides the potential for high-performance microsystems that combine complex electronic functions with optoelectronic capabilities from rich bandgap engineering opportunities, and intimate integration allows short interconnects for lower power and latency. The dominant pure-play foundry model plus the differences in materials and processes between these technologies dictate separate fabrication of the devices followed by integration of individual die, presenting unique challenges in die preparation, metallization, and bumping, especially as interconnect densities increase. In this paper, we describe progress towards realizing an S-band WDM RF photonic link combining 180 nm silicon CMOS electronics with InGaAsP integrated optoelectronics, using HI processes and approaches that scale into microwave and millimeter-wave frequencies.

Major breakthroughs in silicon photonics often come from the integration of new materials into the platform, from bonding III-Vs for on-chip lasers to growth of Ge for high-speed photodiodes. This report describes the integration of transparent conducting oxides (TCOs) onto silicon waveguides to enable ultra-compact (<10 μm) electro-optical modulators. These modulators exploit the "epsilon-near-zero" effect in TCOs to create a strong light-matter interaction and allow for a significant reduction in footprint. Waveguide-integrated devices fabricated in the Sandia Microfab demonstrated gigahertz-speed operation of epsilon-near-zero based modulators for the first time. Numerical modeling of these devices matched well with theory and showed a path for significant improvements in device performance with high-carrier-mobility TCOs such as cadmium oxide. A cadmium oxide sputtering capability has been brought online at Sandia; integration of these high mobility films is the subject of future work to develop and mature this exciting class of Si photonics devices.

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We numerically analyze the role of carrier mobility in transparent conducting oxides in epsilon-near-zero phase modulators. High-mobility materials such as cadmium oxide enable compact photonic phase modulators with a modulation figure of merit > 29-{\circ}/\mathrm{dB}.

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