We report on a two-step technique for post-bond III-V substrate removal involving precision mechanical milling and selective chemical etching. We show results on GaAs, GaSb, InP, and InAs substrates and from mm-scale chips to wafers.
IEEE International Symposium on Applications of Ferroelectrics, ISAF 2023, International Symposium on Integrated Functionalities, ISIF 2023 and Piezoresponse Force Microscopy Workshop, PFM 2023, Proceedings
Radio frequency (RF) magnetic devices are key components in RF front ends. However, they are difficult to miniaturize and remain the bulkiest components in RF systems. Acoustically driven ferromagnetic resonance (ADFMR) offers a route towards the miniaturization of RF magnetic devices. The ADFMR literature thus far has focused predominantly on the dynamics of the coupling process, with relatively little work done on the device optimization. In this work, we present an optimized 2 GHz ADFMR device utilizing relaxed SPUDT transducers in lithium tantalate. We report an insertion loss of -13.7 dB and an ADFMR attenuation constant of -71.7 dB/mm, making this device one of the best performing ADFMR devices to date.
We report on a two-step technique for post-bond III-V substrate removal involving precision mechanical milling and selective chemical etching. We show results on GaAs, GaSb, InP, and InAs substrates and from mm-scale chips to wafers.