Publications

We report on a two-step technique for post-bond III-V substrate removal involving precision mechanical milling and selective chemical etching. We show results on GaAs, GaSb, InP, and InAs substrates and from mm-scale chips to wafers.

We report on a two-step technique for post-bond III-V substrate removal involving precision mechanical milling and selective chemical etching. We show results on GaAs, GaSb, InP, and InAs substrates and from mm-scale chips to wafers.

Low loss silicon nitride ring resonator reflectors provide feedback to a III/V gain chip, achieving single-mode lasing at 772nm. The Si3N4 is fabricated in a CMOS foundry compatible process that achieves loss values of 0.036dB/cm.