104Hz Linewidth, Self-injection Locked, Chip Scale NIR Laser
Abstract not provided.
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Jump to search filtersGasb-to-Si Direct Wafer Bonding and Thermal Budget Considerations for Photonic Applications
Abstract not provided.
Quantum Enhanced Josephson Junction Field-Effect Transistors for Logic Applications
Abstract not provided.
Compositional Analysis of Pt1-XCox Thin Film with Single Deposition, Combinatorial Co-Sputter Technique
Abstract not provided.
Wide bandwidth TM tunable vernier rings for heterogeneously integrated lasers
2024 Conference on Lasers and Electro-Optics, CLEO 2024
We present a novel design of a III-V-on-silicon heterogeneously integrated tunable ring laser, achieving >80 nanometers of tuning bandwidth, the widest conceived using only two rings, fostering many applications such as spectroscopy and beam steering.
Substrate-Independent Technique of III-V Heterogeneous Integration of Focal Plane Arrays and Lasers
2023 Conference on Lasers and Electro Optics CLEO 2023
We report on a two-step technique for post-bond III-V substrate removal involving precision mechanical milling and selective chemical etching. We show results on GaAs, GaSb, InP, and InAs substrates and from mm-scale chips to wafers.
Substrate-Independent Technique of III-V Heterogeneous Integration of Focal Plane Arrays and Lasers
CLEO: Science and Innovations, CLEO:S and I 2023
We report on a two-step technique for post-bond III-V substrate removal involving precision mechanical milling and selective chemical etching. We show results on GaAs, GaSb, InP, and InAs substrates and from mm-scale chips to wafers.
NIR Ring Mirror Laser Utilizing Low Loss Silicon Nitride Photonic Platform
CLEO: Fundamental Science, CLEO:FS 2023
Low loss silicon nitride ring resonator reflectors provide feedback to a III/V gain chip, achieving single-mode lasing at 772nm. The Si3N4 is fabricated in a CMOS foundry compatible process that achieves loss values of 0.036dB/cm.
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