Publications

Abstract not provided.

We present a novel design of a III-V-on-silicon heterogeneously integrated tunable ring laser, achieving >80 nanometers of tuning bandwidth, the widest conceived using only two rings, fostering many applications such as spectroscopy and beam steering.

We demonstrate high-efficiency emission at wavelengths longer than 540 nm from InGaN quantum wells regrown on periodic arrays of GaN nanostructures and explore their incorporation into nanophotonic resonators for semiconductor laser development.