Publications

Ruyack, Alexander R.; Siddiqui, Aleem M.; Hummel, Gwendolyn H.; Sorensen, Kurt W.; Forbes, T.; Nordquist, Christopher N.; Eichenfield, Matthew S.

Abstract not provided.

Paldia, Robynne L.; Aryal, Arjun A.; Behzadirad, Mahmoud B.; Stricklin, Isaac S.; Busani, Tito B.; Luk, Ting S.; Siddiqui, Aleem M.; Wang, Haiyan W.

Abstract not provided.

Paldi, Robynne L.; Aryal, Arjun A.; Qia, Zhimin Q.; Behzadirad, Mahmoud B.; Wood, Michael G.; Barnard, James P.; Branch, Darren W.; Busani, Tito B.; Siddiqui, Aleem M.; Wanga , Haiyan W.

Abstract not provided.

Siddiqui, Aleem M.; Hummel, Gwendolyn H.; Young, Andrew I.; Ruyack, Alexander R.; McClain, Jaime L.; Henry, Michael D.; Esteves, Giovanni E.; Gong, Songbin G.; Edstrand, Adam E.; Reger, Robert W.; Lu, Ruochen L.; Tracey, Keith J.; Griffin, Benjamin G.

Abstract not provided.

Jarzembski, Amun J.; Siddiqui, Aleem M.; Goldflam, Michael G.; IssacRuiz, IssacRuiz; Beechem, Thomas E.

Abstract not provided.

Jarzembski, Amun J.; Siddiqui, Aleem M.; Goldflam, Michael G.; Ruiz, Isaac R.; Beechem, Thomas E.

Abstract not provided.

Jarzembski, Amun J.; Siddiqui, Aleem M.; Goldflam, Michael G.; IssacRuiz, IssacRuiz; Beechem, Thomas E.

Abstract not provided.

Advanced Photonics Research

Paldia, Robynne L.; Qia, Zhimin Q.; Misaa, Shikhar M.; Lua, Juanjuan L.; Suna, Xing S.; Phuaha, Xin L.; Branch, Darren W.; Siddiqui, Aleem M.; Wanga, Haiyan W.

Epitaxial lithium niobate (LNO) thin films are an attractive material for devices across a broad range of fields, including optics, acoustics, and electronics. These applications demand high-quality thin films without in-plane growth domains to reduce the optical/acoustical losses and optimize efficiency. Twin-free single-domain-like growth has been achieved previously, but it requires specific growth conditions that might be hard to replicate. In this work, a versatile nanocomposite-seeded approach is demonstrated as an effective approach to grow single-domain epitaxial lithium niobate thin films. Films are grown through a pulsed laser deposition method and growth conditions are optimized to achieve high-quality epitaxial film. A comprehensive microstructure characterization is performed and optical properties are measured. A piezoelectric acoustic resonator device is developed to demonstrate the future potential of the nanocomposite-seeded approach for high-quality LNO growth for radio frequency (RF) applications.

Nordquist, Christopher N.; Hummel, Gwendolyn H.; Siddiqui, Aleem M.; Young, Andrew I.; McClain, Jaime L.; Ruyack, Alexander R.; Tu, Cheng T.; Lu, Ruochen L.; Gong, Songbin G.; Henry, Michael D.; Esteves, Giovanni E.; Edstrand, Adam E.; Reger, Robert W.; Pluym, Tammy P.; Griffin, Benjamin G.

Abstract not provided.

Siddiqui, Aleem M.; Hummel, Gwendolyn H.; Young, Andrew I.; Yen, Sean Y.; Branch, Darren W.; Nordquist, Christopher N.

Abstract not provided.

Jarzembski, Amun J.; Goldflam, Michael G.; Siddiqui, Aleem M.; Ruiz, Isaac R.; Beechem, Thomas E.

Abstract not provided.

Physical Review Applied

Jarzembski, Amun J.; Goldflam, Michael G.; Siddiqui, Aleem M.; Ruiz, Isaac R.; Beechem, Thomas E.

Graphene plasmons provide a compelling avenue toward chip-scale dynamic tuning of infrared light. Dynamic tunability emerges through controlled alterations in the optical properties of the system defining graphene's plasmonic dispersion. Typically, electrostatic induced alterations of the carrier concentration in graphene working in conjunction with mobility have been considered the primary factors dictating plasmonic tunability. We find here that the surrounding dielectric environment also plays a primary role, dictating not just the energy of the graphene plasmon but so too the magnitude of its tuning and spectral width. To arrive at this conclusion, poles in the imaginary component of the reflection coefficient are used to efficiently survey the effect of the surrounding dielectric on the tuning of the graphene plasmon. By investigating several common polar materials, optical phonons (i.e., the Reststrahlen band) of the dielectric substrate are shown to appreciably affect not only the plasmon's spectral location but its tunability, and its resonance shape as well. In particular, tunability is maximized when the resonances are spectrally distant from the Reststrahlen band, whereas sharp resonances (i.e., high-Q) are achievable at the band's edge. These observations both underscore the necessity of viewing the dielectric environment in aggregate when considering the plasmonic response derived from two-dimensional materials and provide heuristics to design dynamically tunable graphene-based infrared devices.

Lee, Jongmin L.; McGuinness, Hayden J.; Soh, Daniel B.; Christensen, Justin C.; Ding, Roger D.; Finnegan, Patrick S.; Hoth, Gregory W.; Kindel, William K.; Little, Bethany J.; Rosenthal, Randy R.; Wendt, Joel R.; Lentine, Anthony L.; Eichenfield, Matthew S.; Gehl, M.; Kodigala, Ashok; Siddiqui, Aleem M.; Skogen, Erik J.; Vawter, Gregory A.; Ison, Aaron M.; Bossert, David B.; Fuerschbach, Kyle H.; Gillund, Daniel P.; Walker, Charles A.; De Smet, Dennis J.; Brashar, Connor B.; Berg, Joseph B.; Jhaveri, Prabodh M.; Smith, Tony G.; Kemme, S.A.; Schwindt, Peter S.; Biedermann, Grant B.

Abstract not provided.

Lee, Jongmin L.; Biedermann, Grant B.; McGuinness, Hayden J.; Soh, Daniel B.; Christensen, Justin C.; Ding, Roger D.; Finnegan, Patrick S.; Hoth, Gregory W.; Kindel, Will K.; Little, Bethany J.; Rosenthal, Randy R.; Wendt, J.R.; Lentine, Anthony L.; Eichenfield, Matthew S.; Gehl, M.; Kodigala, Ashok; Siddiqui, Aleem M.; Skogen, Erik J.; Vawter, Gregory A.; Ison, Aaron M.; Bossert, David B.; Fuerschbach, Kyle H.; Gillund, Daniel P.; Walker, Charles A.; De Smet, Dennis J.; Brashar, Connor B.; Berg, Joseph B.; Jhaveri, Prabodh M.; Smith, Tony G.; Kemme, S.A.; Schwindt, Peter S.

Abstract not provided.

Hackett, Lisa A.; Siddiqui, Aleem M.; Dominguez, Daniel D.; Douglas, James K.; Tauke-Pedretti, Anna; Friedmann, Thomas A.; Peake, Gregory M.; Arterburn, Shawn C.; Miller, Michael R.; Eichenfield, Matthew S.

Radio frequency (RF) devices are becoming more multi-band, increasing the number of filters and other front-end components while simultaneously pushing towards reduced cost, size, weight, and power (CSWaP). One approach to reducing CSWaP is to augment the achievable functionalities of electromechanical/acoustic filtering chips to include "active" and nonlinear functionalities, such as gain and mixing. The acoustoelectric (AE) effect could enable such active acoustic wave devices. We have examined the AE effect with a leaky surface acoustic wave (LSAW) in a monolithic structure of epitaxial indium gallium arsenide (In GaAs) on lithium niobate (LiNb0 3 ). This lead to experimentally demonstrated state-of-the-art SAW amplifier performance in terms of gain per acoustic wavelength, reduced power consumption, and increased power efficiency. We quantitatively compare the amplifier performance to previous notable works and discuss the outlook of active acoustic wave components using this material platform. Ultimately, this could lead to smaller, higher-performance RF signal processors for communications applications.

2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems and Eurosensors XXXIII, TRANSDUCERS 2019 and EUROSENSORS XXXIII

Siddiqui, Aleem M.; Hackett, Lisa A.; Dominguez, Daniel D.; Tauke-Pedretti, Anna; Friedmann, Thomas A.; Peake, Gregory M.; Miller, Michael R.; Douglas, James K.; Eichenfield, Matthew S.

This paper demonstrates a monolithic surface acoustic wave amplifier fabricated by state-of-the-art heterogenous integration of a IH-V InGaAs-based epitaxial material stack and LiNb03. Due to the superior properties of the materials employed, we observe electron gain and also non-reciprocal gain in excess of 30dB with reduced power consumption. Additionally, we present a framework for performance optimization as a function of material parameters for a targeted gain. This platform enables further advances in active and non-reciprocal piezoelectric acoustic devices.

Siddiqui, Aleem M.; Hackett, Lisa A.; Dominguez, Daniel D.; Tauke-Pedretti, Anna; Friedmann, Thomas A.; Peake, Gregory M.; Miller, Michael R.; Douglas, James K.; Eichenfield, Matthew S.

Abstract not provided.

Optics InfoBase Conference Papers

Siddiqui, Aleem M.; Dominguez, Daniel D.; Michael, Christopher M.; Sims, Ryan; Stanfield, Paul S.; Hackett, Lisa A.; Leenheer, Andrew J.; Eichenfield, Matthew S.

We explore fabrication-process dependencies on optical losses of AlN films and demonstrate Second Harmonic Generation through modal phase-matching in integrated AlN waveguides. A loss-dependent conversion efficiency model is developed to better design waveguides in lossy AlN media.

Siddiqui, Aleem M.; Hackett, Lisa A.; Hackett, Lisa A.; Dominguez, Daniel D.; Friedmann, Thomas A.; Tauke-Pedretti, Anna; Douglas, James K.; Eichenfield, Matthew S.

Abstract not provided.

Journal of Microelectromechanical Systems

Siddiqui, Aleem M.; Olsson, Roy H.; Eichenfield, Matthew S.

This paper describes the theoretical and experimental investigation of interdigitated transducers capable of producing focused acoustical beams in thin film piezoelectric materials. A mathematical formalism describing focused acoustical beams, lamb beams, is presented and related to their optical counterparts in two- and three-dimensions. A novel Fourier domain transducer design methodology is developed and utilized to produce near diffraction limited focused beams within a thin film AlN membrane. The properties of the acoustic beam formed by the transducer were studied by means of Doppler vibrometry implemented with a scanning confocal balanced homodyne interferometer. The Fourier domain modal analysis confirmed that 83% of the acoustical power was delivered to the targeted focused beam which was constituted from the lowest order symmetric mode, while 1% was delivered unintentionally to the beam formed from the anti-symmetric mode, and the remaining power was isotropically scattered. The transmission properties of the acoustic beams as they interact with devices with wavelength scale features were also studied, demonstrating minimal insertion loss for devices in which a subwavelength and pinhole apertures were included. [2018-0059]

Grine, Alejandro J.; Grine, Alejandro J.; Serkland, Darwin K.; Serkland, Darwin K.; Wood, Michael G.; Wood, Michael G.; Soudachanh, Amy L.; Soudachanh, Amy L.; Hollowell, Andrew E.; Hollowell, Andrew E.; Koch, Lawrence K.; Koch, Lawrence K.; Hains, Christopher H.; Hains, Christopher H.; Siddiqui, Aleem M.; Siddiqui, Aleem M.; Eichenfield, Matthew S.; Eichenfield, Matthew S.; Dagel, Daryl D.; Dagel, Daryl D.; Grossetete, Grant G.; Grossetete, Grant G.; Matins, Benjamin M.; Matins, Benjamin M.

Abstract not provided.

Siddiqui, Aleem M.; Hackett, Lisa A.; Hackett, Lisa A.; Dominguez, Daniel D.; Friedmann, Thomas A.; Tauke-Pedretti, Anna; Douglas, James K.; Eichenfield, Matthew S.

Abstract not provided.

Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)

Siddiqui, Aleem M.; Nordquist, Christopher N.; Grine, Alejandro J.; Lepkowski, Stefan M.; Henry, M.D.; Eichenfield, Matthew S.; Griffin, Benjamin G.

Biasing a MEMS switch close to static-pull in reduces the modulation amplitude necessary to achieve resonant pull-in, but results in a highly nonlinear system. In this work, we present a new methodology that captures the essential dynamics and provides a prescription for achieving the optimal drive waveform which reduces the amplitude requirements of the modulation source. These findings are validated both experimentally and through numerical modeling.

Branch, Darren W.; Nordquist, Christopher N.; Eichenfield, Matthew S.; Douglas, James K.; Siddiqui, Aleem M.; Friedmann, Thomas A.

Abstract not provided.

Siddiqui, Aleem M.; Nordquist, Christopher N.; Grine, Alejandro J.; Lepkowski, Stefan M.; Henry, Michael D.; Eichenfield, Matthew S.; Griffin, Benjamin G.

Abstract not provided.