Publications

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Radio frequency (RF) magnetic devices are key components in RF front ends. However, they are difficult to miniaturize and remain the bulkiest components in RF systems. Acoustically driven ferromagnetic resonance (ADFMR) offers a route towards the miniaturization of RF magnetic devices. The ADFMR literature thus far has focused predominantly on the dynamics of the coupling process, with relatively little work done on the device optimization. In this work, we present an optimized 2 GHz ADFMR device utilizing relaxed SPUDT transducers in lithium tantalate. We report an insertion loss of -13.7 dB and an ADFMR attenuation constant of -71.7 dB/mm, making this device one of the best performing ADFMR devices to date.

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Epitaxial single-domain LiNbO3 thin-films are realized using a novel nanocomposite seeding method. Full microstructure characterization and optical property measurement is conducted as a first step to demonstrate viability of this material for integrated photonics applications.

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The conversion efficiency and phase matching bandwidth of ultrafast optical parametric amplification (OPA) are constrained by the dispersion and nonlinear coefficient of the employed crystal as well as pulse shaping effects. In our work we show that an enhancement cavity resonant with the pump seeded at the full repetition rate of the pump laser can automatically reshape the small-signal gain in optical parametric chirped-pulse amplification (OPCPA) to achieve close-to-optimal operation. This new method termed cavity-enhanced OPCPA or C-OPCPA significantly increases both the gain bandwidth and the conversion efficiency, in addition to boosting gain for high-repetition-rate amplification. The goal in C-OPCPA is to arrive at a condition of impedance matching at all temporal coordinates, such that, in the absence of linear losses, all the incident pump power is dissipated in the nonlinear loss element, i.e., converted to signal and idler. The use of a low finesse enhancement cavity resonant with a low average power (<1W) and a high repetition rate (78MHz) pump source is shown to achieve more than 50% conversion efficiency into signal and idler from the coupled pump in an optical parametric process, whereas an equivalent amount of pump power in a single-pass configuration leads to negligible conversion. Additionally, the gain bandwidth is extended by a factor of 3-4 beyond the phase-matching limit. Our empirical observations are corroborated by a numerical analysis of depletion optimizing the single-pass case, which assesses the underlying impedance matching that is responsible for the observed performance improvements.

Epitaxial lithium niobate (LNO) thin films are an attractive material for devices across a broad range of fields, including optics, acoustics, and electronics. These applications demand high-quality thin films without in-plane growth domains to reduce the optical/acoustical losses and optimize efficiency. Twin-free single-domain-like growth has been achieved previously, but it requires specific growth conditions that might be hard to replicate. In this work, a versatile nanocomposite-seeded approach is demonstrated as an effective approach to grow single-domain epitaxial lithium niobate thin films. Films are grown through a pulsed laser deposition method and growth conditions are optimized to achieve high-quality epitaxial film. A comprehensive microstructure characterization is performed and optical properties are measured. A piezoelectric acoustic resonator device is developed to demonstrate the future potential of the nanocomposite-seeded approach for high-quality LNO growth for radio frequency (RF) applications.

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Graphene plasmons provide a compelling avenue toward chip-scale dynamic tuning of infrared light. Dynamic tunability emerges through controlled alterations in the optical properties of the system defining graphene’s plasmonic dispersion. Typically, electrostatic induced alterations of the carrier concentration in graphene working in conjunction with mobility have been considered the primary factors dictating plasmonic tunability. We find here that the surrounding dielectric environment also plays a primary role, dictating not just the energy of the graphene plasmon but so too the magnitude of its tuning and spectral width. To arrive at this conclusion, poles in the imaginary component of the reflection coefficient are used to efficiently survey the effect of the surrounding dielectric on the tuning of the graphene plasmon. By investigating several common polar materials, optical phonons (i.e., the Reststrahlen band) of the dielectric substrate are shown to appreciably affect not only the plasmon’s spectral location but its tunability, and its resonance shape as well. In particular, tunability is maximized when the resonances are spectrally distant from the Reststrahlen band, whereas sharp resonances (i.e., high-Q) are achievable at the band’s edge. Overall, these observations both underscore the necessity of viewing the dielectric environment in aggregate when considering the plasmonic response derived from two-dimensional materials and provide heuristics to design dynamically tunable graphene-based infrared devices.

Graphene plasmons provide a compelling avenue toward chip-scale dynamic tuning of infrared light. Dynamic tunability emerges through controlled alterations in the optical properties of the system defining graphene's plasmonic dispersion. Typically, electrostatic induced alterations of the carrier concentration in graphene working in conjunction with mobility have been considered the primary factors dictating plasmonic tunability. We find here that the surrounding dielectric environment also plays a primary role, dictating not just the energy of the graphene plasmon but so too the magnitude of its tuning and spectral width. To arrive at this conclusion, poles in the imaginary component of the reflection coefficient are used to efficiently survey the effect of the surrounding dielectric on the tuning of the graphene plasmon. By investigating several common polar materials, optical phonons (i.e., the Reststrahlen band) of the dielectric substrate are shown to appreciably affect not only the plasmon's spectral location but its tunability, and its resonance shape as well. In particular, tunability is maximized when the resonances are spectrally distant from the Reststrahlen band, whereas sharp resonances (i.e., high-Q) are achievable at the band's edge. These observations both underscore the necessity of viewing the dielectric environment in aggregate when considering the plasmonic response derived from two-dimensional materials and provide heuristics to design dynamically tunable graphene-based infrared devices.

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Radio frequency (RF) devices are becoming more multi-band, increasing the number of filters and other front-end components while simultaneously pushing towards reduced cost, size, weight, and power (CSWaP). One approach to reducing CSWaP is to augment the achievable functionalities of electromechanical/acoustic filtering chips to include "active" and nonlinear functionalities, such as gain and mixing. The acoustoelectric (AE) effect could enable such active acoustic wave devices. We have examined the AE effect with a leaky surface acoustic wave (LSAW) in a monolithic structure of epitaxial indium gallium arsenide (In GaAs) on lithium niobate (LiNb0 3 ). This lead to experimentally demonstrated state-of-the-art SAW amplifier performance in terms of gain per acoustic wavelength, reduced power consumption, and increased power efficiency. We quantitatively compare the amplifier performance to previous notable works and discuss the outlook of active acoustic wave components using this material platform. Ultimately, this could lead to smaller, higher-performance RF signal processors for communications applications.

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Active surface acoustic wave components have the potential to transform RF front ends by consolidating functionalities that currently occur across multiple chip technologies, leading to reduced insertion loss from converting back and forth between acoustic and electronic domains in addition to improved size and power efficiency. This letter demonstrates a significant advance in these active devices with a compact, high-gain, and low-power leaky surface acoustic wave amplifier based on the acoustoelectric effect. Devices use an acoustically thin semi-insulating InGaAs surface film on a YX lithium niobate substrate to achieve exceptionally high acoustoelectric interaction strength via an epitaxial In0.53Ga0.47As(P)/InP quaternary layer structure and wafer-scale bonding. We demonstrate 1.9 dB of gain per acoustic wavelength and power consumption of 90 mW for 30 dB of electronic gain. Despite the strong intrinsic leaky propagation loss, 5 dB of terminal gain is obtained for a semiconductor that is only 338 μm long due to state-of-the-art heterogenous integration and an improved material platform.

This paper demonstrates a monolithic surface acoustic wave amplifier fabricated by state-of-the-art heterogenous integration of a IH-V InGaAs-based epitaxial material stack and LiNb03. Due to the superior properties of the materials employed, we observe electron gain and also non-reciprocal gain in excess of 30dB with reduced power consumption. Additionally, we present a framework for performance optimization as a function of material parameters for a targeted gain. This platform enables further advances in active and non-reciprocal piezoelectric acoustic devices.

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This paper describes the theoretical and experimental investigation of interdigitated transducers capable of producing focused acoustical beams in thin film piezoelectric materials. A mathematical formalism describing focused acoustical beams, lamb beams, is presented and related to their optical counterparts in two- and three-dimensions. A novel Fourier domain transducer design methodology is developed and utilized to produce near diffraction limited focused beams within a thin film AlN membrane. The properties of the acoustic beam formed by the transducer were studied by means of Doppler vibrometry implemented with a scanning confocal balanced homodyne interferometer. The Fourier domain modal analysis confirmed that 83% of the acoustical power was delivered to the targeted focused beam which was constituted from the lowest order symmetric mode, while 1% was delivered unintentionally to the beam formed from the anti-symmetric mode, and the remaining power was isotropically scattered. The transmission properties of the acoustic beams as they interact with devices with wavelength scale features were also studied, demonstrating minimal insertion loss for devices in which a subwavelength and pinhole apertures were included. [2018-0059]