The National Rotor Testbed (NRT) is a wind turbine blade research program in the Sandia National Laboratories (SNL) Wind Department that has developed a new blade design. Each blade includes bonded-in, threaded metal root inserts that enable the blades to be bolted onto the wind turbine hub. Prior to installing the flight blades on the turbine, root insert strength verification tests exhibited a subset of failures below the design load on one (NRT-02) of four blades. As part of a root cause analysis for the failures, this work analyzes "scraps" of the epoxy adhesive used to bond the metal inserts into the blade and uses surface topography and x-ray fluorescence (XRF) measurements to characterize the exterior surface of the root insert. Samples were taken from inserts that exhibited both high and low loads at failure, as well as some "control inserts" to monitor the state of the surface throughout the manufacturing process. Differences in the calorimetric response of the adhesive from the separate root inserts are apparent but none of them appear to relate to the pull load required to dislodge the inserts. Two takeaways of note include: In the way that the adhesive is processed, it does not reach full cure; and, Something occurred to sample#10 such that the fully-cured adhesive has a significantly lower Tg.
Contact probing of gaging surfaces is used throughout dimensional metrology. Probe tips such as ruby, sapphire, or diamond are commonly employed as styli for universal length measuring machines (ULMs) and coordinate measuring machines (CMMs) due to the hardness, durability, and wear resistance. Gaging surfaces of gage blocks are precision ground or lapped, with very low surface roughness to enable wringing. Damage or contamination of these surfaces can prevent wringing and lead to measurement error. Experimental investigations using a horizontal ULM and CMM have revealed that even at low force settings (≤0.16 N), probe materials such as ruby and sapphire can cause plastic deformation to hardened carbon chrome steel (such as AISI 52,100) gage block surfaces at the microscale, likely attributed to fretting-associated wear. Under some conditions, permanent transfer of material from the probe stylus to the gaging surface is possible. Results demonstrate irreversible changes and damage to gaging surfaces with repeated probe contact on a ULM and CMM. Optical microscopy, optical profilometry, and scanning electron microscopy (SEM) provide a semi-quantitative assessment of microscale plastic deformation and material transfer. X-ray photoelectron spectroscopy (XPS), Auger electron spectroscopy (AES), and Raman techniques confirm chemical constituency of reference materials used (gage blocks and probes) and also identify makeup of deposits on gaging surfaces following probe contact.
The goal of this project was to qualitatively evaluate the efficacy of using plasma cleaning to remove PDMS from vacuum systems. Silicon containing compounds are notorious for interfering with vacuum system techniques such as x-ray photoelectron spectroscopy (XPS), Auger Electron Spectroscopy (AES) and Secondary lon Mass Spectrometry (SIMS). Finding a way to remotely and rapidly remove contaminants from a system saves time and money for analysts using vacuum analytical techniques.
Tin-germanium alloys are increasingly of interest as optoelectronic and thermoelectric materials as well as materials for Li/Na ion battery electrodes. However, the lattice incompatibility of bulk Sn and Ge makes creating such alloys challenging. By exploiting the unique strain tolerance of nanosized crystals, we have developed a facile synthetic method for homogeneous SnxGe1-x alloy nanocrystals with composition varying from essentially pure Ge to 95% Sn while still maintaining the cubic structure.
In this study, the scaling of polarization and pyroelectric response across a thickness series (5–20 nm) of Hf0.58Zr0.42O2 films with TaN electrodes was characterized. Reduction in thickness from 20 nm to 5 nm resulted in a decreased remanent polarization from 17 to 2.8 μC cm-2. Accompanying the decreased remanent polarization was an increased absolute pyroelectric coefficient, from 30 to 58 μC m-2 K-1. The pyroelectric response of the 5 nm film was unstable and decreased logarithmically with time, while that of 10 nm and thicker films was stable over a time scale of >300 h at room temperature. Finally, the sign of the pyroelectric response was irreversible with differing polarity of poling bias for the 5 nm thick film, indicating that the enhanced pyroelectric response was of electret origins, whereas the pyroelectric response in thicker films was consistent with a crystallographic origin.
Materials aging is a high-consequence failure mode in electronic systems. Such mechanisms can degrade the electrical properties of connectors, relays, wire bonds, and other interconnections. Lost performance will impact, not only that of the device, but also the function and reliability of next-level assemblies and the weapons system as a whole. The detections of changes to materials surfaces at the nanometer-scale resolution, provides a means to identify aging processes at their early stages before they manifest into latent failures that affect system-level performance and reliability. Diffusion will be studied on thin films that undergo accelerated aging using the nanometer scale characterization technique of Frequency Modulated Kelvin Probe Force Microscopy (FM-KPFM). The KPFM provides a relatively easy, non-destructive methodology that does not require high-vacuum facilities to obtain nanometer spatial resolution of surface chemistry changes. The KPFM method can provide the means to measure surface, and near-surface, elemental concentrations that allow the determination of diffusion rate kinetics. These attributes will be illustrated by assessing diffusion in a thin film couple. Validation data will obtained from traditional techniques: (a) Auger electron spectroscopy (AES), x-ray fluorescence (XRF), and xray photoelectron spectroscopy (XPS).
Materials aging is a high-consequence failure mode in electronic systems. Such mechanisms can degrade the electrical properties of connectors, relays, wire bonds, and other interconnections. Lost performance will impact, not only that of the device, but also the function and reliability of next-level assemblies and the weapons system as a whole. The detections of changes to materials surfaces at the nanometer-scale resolution, provides a means to identify aging processes at their early stages before they manifest into latent failures that affect system-level performance and reliability. Diffusion will be studied on thin films that undergo accelerated aging using the nanometer scale characterization technique of Frequency Modulated Kelvin Probe Force Microscopy (FM-KPFM). The KPFM provides a relatively easy, non-destructive methodology that does not require high-vacuum facilities to obtain nanometer spatial resolution of surface chemistry changes. The KPFM method can provide the means to measure surface, and near-surface, elemental concentrations that allow the determination of diffusion rate kinetics. These attributes will be illustrated by assessing diffusion in a thin film couple. Validation data will obtained from traditional techniques: (a) Auger electron spectroscopy (AES), x-ray fluorescence (XRF), and xray photoelectron spectroscopy (XPS).
Pyroelectric coefficients were measured for 20 nm thick crystalline hafnium zirconium oxide (Hf1-xZrxO2) thin films across a composition range of 0 ≤ x ≤ 1. Pyroelectric currents were collected near room temperature under zero applied bias and a sinusoidal oscillating temperature profile to separate the influence of non-pyroelectric currents. The pyroelectric coefficient was observed to correlate with zirconium content, increased orthorhombic/tetragonal phase content, and maximum polarization response. The largest measured absolute value was 48 μCm−2 K−1 for a composition with x = 0.64, while no pyroelectric response was measured for compositions which displayed no remanent polarization (x = 0, 0.91, and 1).
Nickel-doped α-MnO2 nanowires (Ni-α-MnO2) were prepared with 3.4% or 4.9% Ni using a hydrothermal method. A comparison of the electrocatalytic data for the oxygen reduction reaction (ORR) in alkaline electrolyte versus that obtained with α-MnO2 or Cu-α-MnO2 is provided. In general, Ni-α-MnO2 (e.g., Ni-4.9%) had higher n values (n = 3.6), faster kinetics (k = 0.015 cm s-1), and lower charge transfer resistance (RCT = 2264 Ω at half-wave) values than MnO2 (n = 3.0, k = 0.006 cm s-1, RCT = 6104 Ω at half-wave) or Cu-α-MnO2 (Cu-2.9%, n = 3.5, k = 0.015 cm s-1, RCT = 3412 Ω at half-wave), and the overall activity for Ni-α-MnO2 trended with increasing Ni content, i.e., Ni-4.9% > Ni-3.4%. As observed for Cu-α-MnO2, the increase in ORR activity correlates with the amount of Mn3+ at the surface of the Ni-α-MnO2 nanowire. Examining the activity for both Ni-α-MnO2 and Cu-α-MnO2 materials indicates that the Mn3+ at the surface of the electrocatalysts dictates the activity trends within the overall series. Single nanowire resistance measurements conducted on 47 nanowire devices (15 of α-MnO2, 16 of Cu-α-MnO2-2.9%, and 16 of Ni-α-MnO2-4.9%) demonstrated that Cu-doping leads to a slightly lower resistance value than Ni-doping, although both were considerably improved relative to the undoped α-MnO2. The data also suggest that the ORR charge transfer resistance value, as determined by electrochemical impedance spectroscopy, is a better indicator of the cation-doping effect on ORR catalysis than the electrical resistance of the nanowire. (Figure Presented).
A new multi-step, solution-phase method for the spontaneous deposition of tungsten from a room temperature ethereal solution is reported. This immersion process relies on the deposition of a sacrificial zinc coating which is galvanically displaced by the ethermediated reduction of oxophilic WCl6. Subsequent thermal treatment renders a crystalline, metallic tungsten film. The chemical evolution of the surface and formation of a complex intermediate tungsten species is characterized by X-ray diffraction, infrared spectroscopy, and X-ray photoelectron spectroscopy. Efficient metallic tungsten deposition is first characterized on a graphite substrate and then demonstrated on a functional carbon foam electrode. The resulting electrochemical performance of the modified electrode is interrogated with the canonical aqueous ferricyanide system. A tungsten-coated carbon foam electrode showed that both electrode resistance and overall electrochemical cell resistance were reduced by 50%, resulting in a concomitant decrease in redox peak separation from 1.902 V to 0.783 V. This process promises voltage efficiency gains in electrodes for energy storage technologies and demonstrates the viability of a new route to tungsten coating for technologies and industries where high conductivity and chemical stability are paramount.
This report describes a new, bio-inspired approach to electrical energy storage, based on the generation, maintenance, and discharge of ion concentration gradients. This approach was investigated as part of a Laboratory Directed Research and Development program at Sandia National Laboratories in Albuquerque, NM between October 2012 and September 2015. In particular, this report describes the development of ion-selective nanoporous membranes, controlled through pore morphology and Sandia-developed electrochemical functionalization. In addition, it describes a potential avenue to functionalize synthetic polymer membranes in a way that facilitates oriented ion pump binding to polymer surfaces. Finally, it highlights a number of new computational findings central to the understanding and ultimate design of synthetic ion channels and ion gates needed for biomimetic ion-based electrochemical energy storage.
We examined amorphous titania thin films for use as the active material in a polarimetry based HF sensor. The amorphous titania films were found to be sensitive to vapor phase HF and the reaction product was identified as a hydronium oxofluorotitanate phase, which has previously only been synthesized in aqueous solution. The extent of reaction varied both with vapor phase HF concentration, relative humidity, and the exposure time. HF concentrations as low as 1 ppm could be detected for exposure times of 120 h.
Epitaxial (111) MgO films were prepared on (0001) AlxGa1-xN via molecular-beam epitaxy for x=0 to x=0.67. Valence band offsets of MgO to AlxGa1-xN were measured using X-ray photoelectron spectroscopy as 1.65±0.07eV, 1.36±0.05eV, and 1.05±0.09eV for x=0, 0.28, and 0.67, respectively. This yielded conduction band offsets of 2.75eV, 2.39eV, and 1.63eV for x=0, 0.28, and 0.67, respectively. All band offsets measured between MgO and AlxGa1-xN provide a>1eV barrier height to the semiconductor.
The thermal conductivity of amorphous TaOx memristive films having variable oxygen content is measured using time domain thermoreflectance. Thermal transport is described by a two-part model where the electrical contribution is quantified via the Wiedemann-Franz relation and the vibrational contribution by the minimum thermal conductivity limit for amorphous solids. The vibrational contribution remains constant near 0.9 W/mK regardless of oxygen concentration, while the electrical contribution varies from 0 to 3.3 W/mK. Thus, the dominant thermal carrier in TaOx switches between vibrations and charge carriers and is controllable either by oxygen content during deposition, or dynamically by field-induced charge state migration.
Replicating compounds are used to cast reproductions of surface features on a variety of materials. Replicas allow for quantitative measurements and recordkeeping on parts that may otherwise be difficult to measure or maintain. In this study, the chemistry and replicating capability of several replicating compounds was investigated. Additionally, the residue remaining on material surfaces upon removal of replicas was quantified. Cleaning practices were tested for several different replicating compounds. For all replicating compounds investigated, a thin silicone residue was left by the replica. For some compounds, additional inorganic species could be identified in the residue. Simple solvent cleaning could remove some residue.
Electro-optical organic materials hold great promise for the development of high-efficiency devices based on exciton formation and dissociation, such as organic photovoltaics (OPV) and organic light-emitting devices (OLEDs). However, the external quantum efficiency (EQE) of both OPV and OLEDs must be improved to make these technologies economical. Efficiency rolloff in OLEDs and inability to control morphology at key OPV interfaces both reduce EQE. Only by creating materials that allow manipulation and control of the intimate assembly and communication between various nanoscale excitonic components can we hope to first understand and then engineer the system to allow these materials to reach their potential. The aims of this proposal are to: 1) develop a paradigm-changing platform for probing excitonic processes composed of Crystalline Nanoporous Frameworks (CNFs) infiltrated with secondary materials (such as a complimentary semiconductor); 2) use them to probe fundamental aspects of excitonic processes; and 3) create prototype OPVs and OLEDs using infiltrated CNF as active device components. These functional platforms will allow detailed control of key interactions at the nanoscale, overcoming the disorder and limited synthetic control inherent in conventional organic materials. CNFs are revolutionary inorganic-organic hybrid materials boasting unmatched synthetic flexibility that allow tuning of chemical, geometric, electrical, and light absorption/generation properties. For example, bandgap engineering is feasible and polyaromatic linkers provide tunable photon antennae; rigid 1-5 nm pores provide an oriented, intimate host for triplet emitters (to improve light emission in OLEDs) or secondary semiconducting polymers (creating a charge-separation interface in OPV). These atomically engineered, ordered structures will enable critical fundamental questions to be answered concerning charge transport, nanoscale interfaces, and exciton behavior that are inaccessible in disordered systems. Implementing this concept also creates entirely new dimensions for device fabrication that could both improve performance, increase durability, and reduce costs with unprecedented control of over properties. This report summarizes the key results of this project and is divided into sections based on publications that resulted from the work. We begin in Section 2 with an investigation of light harvesting and energy transfer in a MOF infiltrated with donor and acceptor molecules of the type typically used in OPV devices (thiophenes and fullerenes, respectively). The results show that MOFs can provide multiple functions: as a light harvester, as a stabilizer and organizer or the infiltrated molecules, and as a facilitator of energy transfer. Section 3 describes computational design of MOF linker groups to accomplish light harvesting in the visible and facilitate charge separation and transport. The predictions were validated by UV-visible absorption spectroscopy, demonstrating that rational design of MOFs for light-harvesting purposes is feasible. Section 4 extends the infiltration concept discussed in Section to, which we now designate as "Molecule@MOF" to create an electrically conducting framework. The tailorability and high conductivity of this material are unprecedented, meriting publication in the journal Science and spawning several Technical Advances. Section 5 discusses processes we developed for depositing MOFs as thin films on substrates, a critical enabling technology for fabricating MOF-based electronic devices. Finally, in Section 6 we summarize results showing that a MOF thin film can be used as a sensitizer in a DSSC, demonstrating that MOFs can serve as active layers in excitonic devices. Overall, this project provides several crucial proofs-of- concept that the potential of MOFs for use in optoelectronic devices that we predicted several years ago [ 3 ] can be realized in practice.
Gd2O3 films were prepared on (0001)-oriented AlxGa1-xN (0≤x≤0.67) thin film substrates via reactive molecular-beam epitaxy. X-ray diffraction revealed that these films possessed the cubic bixbyite structure regardless of substrate composition and were all 111-oriented with in-plane rotations to account for the symmetry difference between the oxide film and nitride epilayer. Valence band offsets were characterized by X-ray photoelectron spectroscopy and were determined to be 0.41±0.02eV, 0.17±0.02eV, and 0.06±0.03eV at the Gd2O3/AlxGa1-xN interfaces for x=0, 0.28, and 0.67, respectively.