Exploring Resilient Transformer & CNN Architectures FOR Resource-Constrained edge systems
Abstract not provided.
Publications
Search results
Jump to search filtersIn-Situ Observation of Circuit Behavior Using Pump-Probe Laser Voltage Probe Technique
Abstract not provided.
Total Ionizing Dose Response of a AlN-Based Precision Oscillator
Abstract not provided.
Total Ionizing Dose Response of a Novel Precision Oscillator Implementation
Abstract not provided.
Investigating GeTe as an Ovonic Threshold Switch with Spectroscopic and Electronic Techniques
Abstract not provided.
A Radiation Hardened by Design FPGA with Distributed Single Event Upset Sensors, Embedded Error Handler, and 8Mb Embedded MRAM Configuration Storage in 22nm Bulk FinFET CMOS
Abstract not provided.
Single Event Upset and Total Ionizing Dose Response of 12LP FinFET Digital Circuits
Abstract not provided.
Single Event Upset and Total Ionizing Dose Response of 12LP FinFET Digital Circuits
Abstract not provided.
Total ionizing dose and single event effects on 12-nm bulk FinFETs
Abstract not provided.
Evidence of Interface Trap Build-up Irradiated 14nm Bulk FinFET Technologies
Abstract not provided.
Investigating Heavy Ion Effects on 14nm-Process FinFETs: Displacement Damage Versus Total Ionizing Dose
Abstract not provided.
Evidence of Interface trap build-up irradiated 14nm Bulk FinFET Technologies
Abstract not provided.
Heavy Ion Displacement Damage Effects in 14nm-Process FinFETs
Abstract not provided.
Evidence of Interface build-up in irradiated 14nm Bulk FinFET Technologies
Abstract not provided.
Comparison of Sensitive Volumes Associated with Ion-and Laser-Induced Charge Collection in an Epitaxial Silicon Diode
IEEE Transactions on Nuclear Science
A sensitive volume is developed using pulsed laser-induced collected charge for two bias conditions in an epitaxial silicon diode. These sensitive volumes show good agreement with experimental two photon absorption laser-induced collected charge at a variety of focal positions and pulse energies. When compared to ion-induced collected charge, the laser-based sensitive volume over predicts the experimental collected charge at low bias and agrees at high bias. Here, a sensitive volume based on ion-induced collected charge adequately describes the ion experimental results at both biases. Differences in the amount of potential modulation explain the differences between the ion-and laser-based sensitive volumes at the lower bias. Truncation of potential modulation by the highly doped substrate at the higher bias results in similar sensitive volumes.
Correlation of Sensitive Volumes Associated with Ion- and Laser-Induced Charge Collection in an Epitaxial Silicon Diode
Abstract not provided.
Radiation Response of AlGaN-Channel HEMTs
IEEE Transactions on Nuclear Science
In this paper, we present heavy ion and proton data on AlGaN highvoltage HEMTs showing Single Event Burnout, Total Ionizing Dose, and Displacement Damage responses. These are the first such data for materials of this type. Two different designs of the epitaxial structure were tested for Single Event Burnout (SEB). The default layout design showed burnout voltages that decreased rapidly with increasing LET, falling to about 25% of nominal breakdown voltage for ions with LET of about 34 MeV·cm2/mg for both structures. Samples of the device structure with lower AlN content were tested with varying gate-drain spacing and revealed an improved robustness to heavy ions, resulting in burnout voltages that did not decrease up to at least 33.9 MeV·cm2/mg. Failure analysis showed there was consistently a point, location random, where gate and drain had been shorted. Oscilloscope traces of terminal voltages and currents during burnout events lend support to the hypothesis that burnout events begin with a heavy ion strike in the vulnerable region between gate and drain. This subsequently initiates a cascade of events resulting in damage that is largely manifested elsewhere in the device. This hypothesis also suggests a path for greatly improving the susceptibility to SEB as development of this technology goes forward. Lastly, testing with 2.5 MeV protons showed only minor changes in device characteristics.
Summary of Total Dose Testing on IBM Bottom Oxidation Through STI (BOTS) FinFETs [Slides]
State of the art semiconductor processes have created high performance and low power consumption technologies. There is a drive to use these technologies for commercial space, defense, and infrastructure.
TID-Induced Leakage and Drive Characteristics of Planar 22-nm PDSOI and 14-nm Bulk and Quasi-SOI FinFET Devices
Abstract not provided.
Single-Event Characterization of 16 nm FinFET Xilinx UltraScale+ Devices with Heavy Ion and Neutron Irradiation
Abstract not provided.
Radiation Response of AlGaN-Channel HEMTs
Abstract not provided.
Single-Event Characterization of 16 nm FinFET Xilinx UltraScale+ Devices with Heavy Ion and Neutron Irradiation
Abstract not provided.
Single-Event Characterization of the 16 nm FinFET Xilinx Kintex UltraScale+ in Heavy Ions
Abstract not provided.
Heavy-Ion Irradiation of the Xilinx Kintex UltraScale+ FPGA
Abstract not provided.
Potential Impact of WBG and UWBG Devices on Realizing Radiation-Hard POwer Electronics
Abstract not provided.
Results 1–25 of 82