Publications

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When designing measures to control infectious disease spread, it is crucial to understand the structure of the population for which interventions are being implemented. Recent work has highlighted the need for models that incorporate demographic heterogeneity not just in age structure but also by socioeconomic status (SES). Appropriately capturing additional sources of population heterogeneity requires considerable data and model development. To understand the potential disagreement between SES-explicit or SES-agnostic disease models, we adapted Sandia’s Adaptive Recovery Model (ARM) model to consider differences in contact structure and mortality by Social Vulnerability Index (SVI) on a theoretical network. We also incorporated an Average network that did not consider SVI. By exploring disparities in vaccine and PPE uptake by SES and comparing to Average networks, as well as analyzing the influence of global vs. local contact, we found that the two model constructions often predicted different outcomes. Whether these differences are truly reflective of incorporating SES, and which model most closely represents reality, merits further investigation.

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Dominic D’Onofrio is currently a Junior studying Information and Technology at New Mexico Institute of Mining and Technology. He recently secured an Internship with NMCCoE, where he is involved with the TracerFIRE 12 project. Additionally, he is contributing to the load and security testing team by researching ways to implement pipelining and DevSecOps; this is his main project while he is at part time capacity for TracerFIRE 12. He is doing these projects to enhance his knowledge as a system administrator and gain a deeper understating of cybersecurity practices within national labs.

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This report summarizes the international collaborations conducted by Sandia funded by the US Department of Energy Office (DOE) of Nuclear Energy (DOE-NE) Spent Fuel and Waste Science & Technology (SFWST) as part of the Sandia National Laboratories Salt R&D and Salt International work packages. This report satisfies the level-three milestone M3SF-23SN010303062. Several stand-alone sections make up this summary report, each completed by the participants. The sections discuss granular salt reconsolidation (KOMPASS), engineered barriers (RANGERS), numerical model comparison (DECOVALEX) and an NEA Salt Club working group on the development of scenarios as part of the performance assessment development process. Finally, we summarize events related to the US/German Workshop on Repository Research, Design and Operations.

Motion primitives allow for application of discrete search algorithms to rapidly produce trajectories in complex continuous space. The maneuver automaton (MA) provides an elegant formulation for creating a primitive library based on trims and maneuvers. However, performance is fundamentally limited by the contents of the primitive library. If the library is too sparse, performance can be poor in terms of path cost, whereas a library that is too large can increase run time. This work outlines new methods for using genetic algorithms to prune a primitive library. The proposed methods balance the path cost and planning time while maintaining the reachability of the MA. The genetic algorithm in this paper evaluates and mutates populations of motion primitive libraries to optimize both objectives. Here, we illustrate the performance of these methods with a simulated study using a nonlinear medium-fidelity F-16 model. We optimize a library with the presented algorithm for obstacle-free navigation and a nap-of-the-Earth navigation task. In the obstacle-free navigation task, we show a tradeoff of a 10.16% higher planning cost for a 96.63% improvement in run time. In the nap-of-the-Earth task, we show a tradeoff of a 9.712% higher planning cost for a 92.06% improvement in run time.

Recent work on atomic-precision dopant incorporation technologies has led to the creation of both boron and aluminum δ -doped layers in silicon with densities above the solid solubility limit. We use density functional theory to predict the band structure and effective mass values of such δ layers, first modeling them as ordered supercells. Structural relaxation is found to have a significant impact on the impurity band energies and effective masses of the boron layers, but not the aluminum layers. However, disorder in the δ layers is found to lead to a significant flattening of the bands in both cases. We calculate the local density of states and doping potential for these δ -doped layers, demonstrating that their influence is highly localized with spatial extents at most 4 nm. We conclude that acceptor δ -doped layers exhibit different electronic structure features dependent on both the dopant atom and spatial ordering. This suggests prospects for controlling the electronic properties of these layers if the local details of the incorporation chemistry can be fine-tuned.

Understanding and controlling nanoscale interface phenomena, such as band bending and secondary phase formation, is crucial for electronic device optimization. In granular metal (GM) studies, where metal nanoparticles are embedded in an insulating matrix, the importance of interface phenomena is frequently neglected. Here, we demonstrate that GMs can serve as an exemplar system for evaluating the role of secondary phases at interfaces through a combination of x-ray photoemission spectroscopy (XPS) and electrical transport studies. We investigated SiN_x as an alternative to more commonly used oxide-insulators, as SiN_x-based GMs may enable high temperature applications when paired with refractory metals. Comparing Co-SiN_x and Mo-SiN_x GMs, we found that, in the tunneling-dominated insulating regime, Mo-SiN_x had reduced metal-silicide formation and orders-of-magnitude lower conductivity. XPS measurements indicate that metal-silicide and metal-nitride formation are mitigatable concerns in Mo-SiN_x. Given the metal-oxide formation seen in other GMs, SiN_x is an appealing alternative for metals that readily oxidize. Furthermore, SiN_x provides a path to metal-nitride nanostructures, potentially useful for various applications in plasmonics, optics, and sensing.

While radiation is known to degrade AlGaN/GaN high-electron-mobility transistors (HEMTs), the question remains on the extent of damage governed by the presence of an electrical field in the device. In this study, we induced displacement damage in HEMTs in both ON and OFF states by irradiating with 2.8 MeV Au4+ ion to fluence levels ranging from 1.72 × 10 10 to 3.745 × 10 13 ions cm−2, or 0.001-2 displacement per atom (dpa). Electrical measurement is done in situ, and high-resolution transmission electron microscopy (HRTEM), energy dispersive x-ray (EDX), geometrical phase analysis (GPA), and micro-Raman are performed on the highest fluence of Au4+ irradiated devices. The selected heavy ion irradiation causes cascade damage in the passivation, AlGaN, and GaN layers and at all associated interfaces. After just 0.1 dpa, the current density in the ON-mode device deteriorates by two orders of magnitude, whereas the OFF-mode device totally ceases to operate. Moreover, six orders of magnitude increase in leakage current and loss of gate control over the 2-dimensional electron gas channel are observed. GPA and Raman analysis reveal strain relaxation after a 2 dpa damage level in devices. Significant defects and intermixing of atoms near AlGaN/GaN interfaces and GaN layer are found from HRTEM and EDX analyses, which can substantially alter device characteristics and result in complete failure.

Experiments with trapped ions and neutral atoms typically employ optical modulators in order to control the phase, frequency, and amplitude of light directed to individual atoms. These elements are expensive, bulky, consume substantial power, and often rely on free-space I/O channels, all of which pose scaling challenges. To support many-ion systems like trapped-ion quantum computers or miniaturized deployable devices like clocks and sensors, these elements must ultimately be microfabricated, ideally monolithically with the trap to avoid losses associated with optical coupling between physically separate components. In this work we design, fabricate, and test an optical modulator capable of monolithic integration with a surface-electrode ion trap. These devices consist of piezo-optomechanical photonic integrated circuits configured as multi-stage Mach-Zehnder modulators that are used to control the intensity of light delivered to a single trapped ion on a separate chip. We use quantum tomography employing hundreds of multi-gate sequences to enhance the sensitivity of the fidelity to the types and magnitudes of gate errors relevant to quantum computing and better characterize the performance of the modulators, ultimately measuring single qubit gate fidelities that exceed 99.7%.

Material extrusion additive manufacturing (AM) has enabled an elegant fabrication pathway for a vast material library. Nonetheless, each material requires optimization of printing parameters generally determined through significant trial-and-error testing. To eliminate arduous, iteration-based optimization approaches, many researchers have used machine learning (ML) algorithms which provide opportunities for automated process optimization. In this work, we demonstrate the use of an ML-driven approach for real-time material extrusion print-parameter optimization through in-situ monitoring of printed line geometry. To do this, we use deep invertible neural networks (INNs) which can solve both forward and inverse, or optimization, problems using a single network. By combining in-situ computer vision and deep INNs, the printing parameters can be autonomously optimized to print a target line width in 1.2 s. Furthermore, defects that occur during printing can be rapidly identified and corrected autonomously. The methods developed and presented in this work eliminate user-intensive, time-consuming, and iterative parameter discovery approaches that currently limit accelerated implementation of extrusion-based AM processes. Furthermore, the presented approach can be generalized to provide real-time monitoring and optimization pathways for increasingly complex AM environments.

This work explores the influence of blend composition, network architecture, and hydrogen bonding on the material properties of crosslinked epoxy networks, focusing on the glass transition temperature (Tg) and Young’s modulus (Y). We used coarse-grained molecular dynamics simulations to simulate varying compositions of stiff and flexible components in epoxy monomer blends with varying excess of curative. We find that, without hydrogen bonding, networks of any composition show a monotonically increasing Tg with decreasing excess curative, consistent with theory. In contrast, we find that when hydrogen bonding is introduced, the binary blend networks show significant enhancement in Tg for lightly crosslinked systems. This result contributes to an explanation of the anomalous Tg behavior observed experimentally in these systems. We further find that Y is generally enhanced by hydrogen bonds, especially below Tg, demonstrating that hydrogen bonding has a significant influence on mechanical properties and can allow access to other desirable dynamic behavior, especially self-healing.