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High-Mobility Transparent Conducting Oxides for Compact Epsilon-Near-Zero Silicon Photonic Phase Modulators

2019 Conference on Lasers and Electro-Optics, CLEO 2019 - Proceedings

Wood, Michael G.; Reines, Isak C.; Luk, Ting S.; Serkland, Darwin K.; Campione, Salvatore

We numerically analyze the role of carrier mobility in transparent conducting oxides in epsilon-near-zero phase modulators. High-mobility materials such as cadmium oxide enable compact photonic phase modulators with a modulation figure of merit > 29-{\circ}/\mathrm{dB}.

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Tailoring Second Harmonic Diffraction in GaAs Metasurfaces via Crystal Orientation

2019 Conference on Lasers and Electro-Optics, CLEO 2019 - Proceedings

Vabishchevich, P.P.; Vaskin, A.; Addamane, S.; Liu, S.; Sharma, A.P.; Balakrishnan, G.; Reno, John L.; Keeler, G.A.; Sinclair, Michael B.; Staude, I.; Brener, Igal

We use GaAs metasurfaces with (111) crystal orientation to channel the second harmonic generation (SHG) into the zero-diffraction order that is suppressed for SHG obtained from GaAs metasurfaces with (100) orientation.

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Phase optimization of a silicon photonic two-dimensional electro-optic phased array

2019 Conference on Lasers and Electro-Optics, CLEO 2019 - Proceedings

Gehl, Michael; Hoffman, Galen; Davids, Paul; Starbuck, Andrew L.; Dallo, Christina M.; Long, Christopher M.; Barber, Zeb; Kadlec, Emil; Mohan, R.K.; Crouch, Stephen

Phase errors in large optical phased arrays degrade beam quality and must be actively corrected. Using a novel, low-power electro-optic design with matched pathlengths, we demonstrate simplified optimization and reduced sensitivity to wavelength and temperature.

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A Uniform Practice for Conceptualizing and Communicating Food-Energy-Water Nexus Studies

Earth's Future

Gunda, Thushara

There is growing interest in nexus research: energy-water, energy-water-land, and more recently food-energy-water. Motivating this movement is the recognition that the dynamics and feedbacks that constitute these nexuses have been overlooked in the past but are critical to the planning and management of these interacting elements. Formal reviews have identified gaps in current studies. In this commentary, we highlight additional oversights that are hindering integration of findings in nexus studies, notably usage of imprecise terminology to describe analyses, a failure to close the loop by linking production with corresponding waste streams, and exclusion of dynamics linking diverse constituent elements. Equally lacking from current nexus studies is a consistent protocol for communicating the conceptual basis of our studies. To fill this gap, we draw on diverse perspectives and fields to propose a comprehensive and systematic framework that can guide the model conceptualization phase of nexus studies. We also present a standardized documentation practice (similar to one utilized by the agent-based modeling community) to facilitate communication of nexus studies. These initiatives can improve our ability to account for and communicate the nuanced, food-energy-water nexus interactions in a consistent manner, which is necessary to better inform risk analysis and avoid decisions with unintended consequences and hidden costs to society.

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Position-Dependent Transport of n-p-n Junctions in Axially Doped SiGe Nanowire Transistors

IEEE Electron Device Letters

Delker, Collin J.; Yoo, Jinkyoung; Swartzentruber, Brian; Harris, Charles T.

Nanowire transistors are typically undoped devices whose characteristics depend strongly on the injection of carriers from the electrical contacts. In this letter, we fabricate and characterize SiGe nanowire transistors with an n-p-n doping profile and with a top gate covering only the p-doped section of the nanowire. For each device, we locate the p-segment with scanning capacitance microscopy, where the p-segment position varies along the channel due to the stochastic nature of our dropcast fabrication technique. The current-voltage characteristics for a series of transistors with different gate positions reveal that the on/off ratios for electrons is the highest when the gated p-type section is closest to the source contact, whereas the on/off ratios for holes is the highest when the gated p-type section is closest to the drain contact.

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Silicon Photonic Single-Sideband Generation with Dual-Parallel Mach-Zehnder Modulators

2019 Conference on Lasers and Electro-Optics, CLEO 2019 - Proceedings

Kodigala, Ashok; Gehl, Michael; Derose, C.T.; Hood, D.; Pomerene, A.T.; Dallo, Christina M.; Trotter, Douglas C.; Moore, P.; Starbuck, Andrew L.; Lee, Jongmin; Biedermann, Grant; Lentine, Anthony L.

We demonstrate the first silicon photonic single-sideband (SSB)modulator with dual-parallel Mach-Zehnder modulators (MZMs)operating near 1550 nm with a measured carrier suppression of 27 dB and at least 12 dB sideband suppression at 1 GHz.

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All-Optical Tuning of Fano Resonances in Broken Symmetry GaAs Metasurfaces

2019 Conference on Lasers and Electro-Optics, CLEO 2019 - Proceedings

Karl, Nicholas J.; Vabishchevich, P.P.; Liu, Sheng; Sinclair, Michael B.; Keeler, Gordon A.; Peake, Gregory M.; Brener, Igal

We demonstrate ultrafast tuning of Fano resonances in a broken symmetry III-V metasurface using optical pumping. The resonance is spectrally shifted by 10 nm under low pump fluences of < 100 uJ.cm-2.

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Results 23501–23600 of 99,299
Results 23501–23600 of 99,299