Publications

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Ongoing work at the Z Machine on the development of warm x-ray sources in support of national security missions requires fast x-ray diagnostics with sensitivities significantly higher than what is commercially available. Our team represents a collaborative effort between MESA and Z to fabricate GaAs x-ray detectors that meet this need. The delivered detectors have now been fielded in several Z shot series and are providing hard x-ray data to physicists at Z. In addition to improved time response and hard x-ray sensitivity compared to commercial detectors, the devices fabricated at MESA show much more consistent device-to-device signal levels. This improved repeatability gives researchers at Z new quantitative data for source development efforts.

Transparent conducting oxides, such as doped indium oxide, zinc oxide, and cadmium oxide (CdO), have recently attracted attention as tailorable materials for applications in nanophotonic and plasmonic devices such as low-loss modulators and all-optical switches due to their tunable optical properties, fast optical response, and low losses. In this work, optically induced extraordinarily large reflection changes (up to 135%) are demonstrated in bulk CdO films in the mid-infrared wavelength range close to the epsilon near zero (ENZ) point. To develop a better understanding of how doping level affects the static and dynamic optical properties of CdO, the evolution of the optical properties with yttrium (Y) doping is investigated. An increase in the metallicity and a blueshift of the ENZ point with increasing Y-concentrations is observed. Broadband all-optical switching from near-infrared to mid-infrared wavelengths is demonstrated. The major photoexcited carrier relaxation mechanisms in CdO are identified and it is shown that the relaxation times can be significantly reduced by increasing the dopant concentration in the film. This work could pave the way to practical dynamic and passive optical and plasmonic devices with doped CdO spanning wavelengths from the ultraviolet to the mid-infrared region.

Fast X-ray detectors are critical tools in pulsed power and fusion applications, where detector impulse response of a nanosecond or better is often required. Semiconductor detectors can create fast, sensitive devices with extensive operational flexibility. There is typically a trade-off between detector sensitivity and speed, but higher atomic number absorbers can increase hard X-ray absorption without increasing the charge collection time, provided carriers achieve high velocity. This paper presents X-ray pulse characterization conducted at the Advanced Photon Source of X-ray absorption efficiency and temporal impulse response of current-mode semiconductor X-ray detectors composed of Si, GaAs, and CdTe.

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Heterogeneous Integration (HI) may enable optoelectronic transceivers for short-range and long-range radio frequency (RF) photonic interconnect using wavelength-division multiplexing (WDM) to aggregate signals, provide galvanic isolation, and reduce crosstalk and interference. Integration of silicon Complementary Metal-Oxide-Semiconductor (CMOS) electronics with InGaAsP compound semiconductor photonics provides the potential for high-performance microsystems that combine complex electronic functions with optoelectronic capabilities from rich bandgap engineering opportunities, and intimate integration allows short interconnects for lower power and latency. The dominant pure-play foundry model plus the differences in materials and processes between these technologies dictate separate fabrication of the devices followed by integration of individual die, presenting unique challenges in die preparation, metallization, and bumping, especially as interconnect densities increase. In this paper, we describe progress towards realizing an S-band WDM RF photonic link combining 180 nm silicon CMOS electronics with InGaAsP integrated optoelectronics, using HI processes and approaches that scale into microwave and millimeter-wave frequencies.

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Major breakthroughs in silicon photonics often come from the integration of new materials into the platform, from bonding III-Vs for on-chip lasers to growth of Ge for high-speed photodiodes. This report describes the integration of transparent conducting oxides (TCOs) onto silicon waveguides to enable ultra-compact (<10 μm) electro-optical modulators. These modulators exploit the "epsilon-near-zero" effect in TCOs to create a strong light-matter interaction and allow for a significant reduction in footprint. Waveguide-integrated devices fabricated in the Sandia Microfab demonstrated gigahertz-speed operation of epsilon-near-zero based modulators for the first time. Numerical modeling of these devices matched well with theory and showed a path for significant improvements in device performance with high-carrier-mobility TCOs such as cadmium oxide. A cadmium oxide sputtering capability has been brought online at Sandia; integration of these high mobility films is the subject of future work to develop and mature this exciting class of Si photonics devices.

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We numerically analyze the role of carrier mobility in transparent conducting oxides in epsilon-near-zero phase modulators. High-mobility materials such as cadmium oxide enable compact photonic phase modulators with a modulation figure of merit > 29-{\circ}/\mathrm{dB}.

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We demonstrate an all-semiconductor coupled-cavity VCSEL designed to achieve narrow linewidth at 850 nm. A resonant AlGaAs cavity of thickness 1,937 nm (8 wavelengths) is situated below the 3-quantum-well active region and results in an effective coupled-cavity length of 36 wavelengths.

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In this paper, we analyze a compact silicon photonic phase modulator at 1.55 μm using epsilon-near-zero transparent conducting oxide (TCO) films. The operating principle of the non-resonant phase modulator is field-effect carrier density modulation in a thin TCO film deposited on top of a passive silicon waveguide with a CMOS-compatible fabrication process. We compare phase modulator performance using both indium oxide (In2O3) and cadmium oxide (CdO) TCO materials. Our findings show that practical phase modulation can be achieved only when using high-mobility (i.e. low-loss) epsilon-near-zero materials such as CdO. The CdO-based phase modulator has a figure of merit of 17.1°/dB in a compact 5 μm length. This figure of merit can be increased further through the proper selection of high-mobility TCOs, opening a path for device miniaturization and increased phase shifts.