We describe the challenge of implementing optical interconnect for beyond Moore's electronic devices. In particular, we developed a simple link model and calculated the optical communications energy for logic voltages down to 10 mV. The results of this link model show a limit to the minimum communications energy that depends on the achievable extinction ratio of the devices. This work gives some insight into the tact that should be taken for improved optical devices to have an impact in future computing systems using ultra-low voltage transistor devices.
Tunable silicon microring resonators with small, integrated micro-heaters which exhibit a junction field effect were made using a conventional silicon-on-insulator (SOI) photonic foundry fabrication process. The design of the resistive tuning section in the microrings included a "pinched" p-n junction, which limited the current at higher voltages and inhibited damage even when driven by a pre-emphasized voltage waveform. Dual-ring filters were studied for both large (>4.9 THz) and small (850 GHz) free-spectral ranges. Thermal red-shifting was demonstrated with microsecond-scale time constants, e.g., a dual-ring filter was tuned over 25 nm in 0.6 μs 10%-90% transition time, and with efficiency of 3.2 μW/GHz.
We present experimental results for a selective epitaxially grown Ge-on-Si separate absorption and charge multiplication (SACM) integrated waveguide coupled avalanche photodiode (APD) compatible with our silicon photonics platform. Epitaxially grown Ge-on-Si waveguide-coupled linear mode avalanche photodiodes with varying lateral multiplication regions and different charge implant dimensions are fabricated and their illuminated device characteristics and high-speed performance is measured. We report a record gain-bandwidth product of 432 GHz for our highest performing waveguide-coupled avalanche photodiode operating at 1510nm. Bit error rate measurements show operation with BER< 10-12, in the range from -18.3 dBm to -12 dBm received optical power into a 50 Ω load and open eye diagrams with 13 Gbps pseudo-random data at 1550 nm.
We demonstrate an on-chip polarization beam splitter (PBS), which is adiabatic for the transverse magnetic mode, and diabatic for the transverse electric mode. The PBS has a simple structure that is tolerant to manufacturing variations and exhibits high polarization extinction ratios over a wide bandwidth.
A unique, micro-scale architecture is proposed to create a novel hybrid concentrated photovoltaic system. Micro-scale (sub-millimeter wide), multi-junction cells are attached to a large-area silicon cell backplane (several inches wide) that can optimally collect both direct and diffuse light. By using multi- junction III-V cells, we can get the highest possible efficiency of the direct light input. In addition, by collecting the diffuse light in the large-area silicon cell, we can produce power on cloudy days when the concentrating cells would have minimal output. Through the use of micro-scale cells and lenses, the overall assembly will provide higher efficiency than conventional concentrators and flat plates, while keeping the form factor of a flat plate module. This report describes the hybrid concept, the design of a prototype, including the PV cells and optics, and the experimental results.
Small silicon photonics micro-resonator modulators and filters hold the promise for multi-terabit per-second interconnects at energy consumptions well below 1 pJ/bit. To date, no products exist and little known commercial development is occurring using this technology. Why? In this talk, we review the many challenges that remain to be overcome in bringing this technology from the research labs to the field where they can overcome important commercial, industrial, and national security limitations of existing photonic technologies.
This work represents the first complete analysis of the use of a racetrack resonator to measure the insertion loss of efficient, compact photonic components. Beginning with an in-depth analysis of potential error sources and a discussion of the calibration procedure, the technique is used to estimate the insertion loss of waveguide width tapers of varying geometry with a resulting 95% confidence interval of 0.007 dB. The work concludes with a performance comparison of the analyzed tapers with results presented for four taper profiles and three taper lengths.
The last two decades have seen an explosion in worldwide R&D, enabling fundamentally new capabilities while at the same time changing the international technology landscape. The advent of technologies for continued miniaturization and electronics feature size reduction, and for architectural innovations, will have many technical, economic, and national security implications. It is important to anticipate possible microelectronics development directions and their implications on US national interests. This report forecasts and assesses trends and directions for several potentially disruptive microfabrication capabilities and device architectures that may emerge in the next 5-10 years.
