In this report we describe the testing of a novel scheme for state preparation of trapped ions in a quantum computing setup. This technique optimally would allow for similar precision and speed of state preparation while allowing for individual addressability of single ions in a chain using technology already available in a trapped ion experiment. As quantum computing experiments become more complicated, mid-experiment measurements will become necessary to achieve algorithms such as quantum error correction. Any mid-experiment measurement then requires the measured qubit to be re-prepared to a known quantum state. Currently this involves the protected qubits to be moved a sizeable distance away from the qubit being re-prepared which can be costly in terms of experiment length as well as introducing errors. Theoretical calculations predict that a three-photon process would allow for state preparation without qubit movement with similar efficiencies to current state preparation methods.
We demonstrate an optical waveguide device, capable of supporting the high, invacuum, optical power necessary for trapping a single atom or a cold atom ensemble with evanescent fields. Our photonic integrated platform, with suspended membrane waveguides, successfully manages optical powers of 6 mW (500 μm span) to nearly 30 mW (125 μm span) over an un-tethered waveguide span. This platform is compatible with laser cooling and magnetooptical traps (MOTs) in the vicinity of the suspended waveguide, called the membrane MOT and the needle MOT, a key ingredient for efficient trap loading. We evaluate two novel designs that explore critical thermal management features that enable this large power handling. This work represents a significant step toward an integrated platform for coupling neutral atom quantum systems to photonic and electronic integrated circuits on silicon.
Passive silicon photonic waveguides are exposed to gamma radiation to understand how the performance of silicon photonic integrated circuits is affected in harsh environments such as space or high energy physics experiments. The propagation loss and group index of the mode guided by these waveguides is characterized by implementing a phase sensitive swept-wavelength interferometric method. We find that the propagation loss associated with each waveguide geometry explored in this study slightly increases at absorbed doses of up to 100 krad (Si). The measured change in group index associated with the same waveguide geometries is negligibly changed after exposure. Additionally, we show that the post-exposure degradation of these waveguides can be improved through heat treatment.
We demonstrate the ultrahigh extinction operation of a silicon photonic (SiP) amplitude modulator (AM) employing a cascaded Mach-Zehnder interferometer. By carrying out optimization sweeps without significantly degrading the extinction, the SiP AM is robust to environment changes and maintained >52 dB extinction for >6 hrs.
Measurement uncertainties in the techniques used to characterize loss in photonic waveguides becomes a significant issue as waveguide loss is reduced through improved fabrication technology. Typical loss measurement techniques involve environmentally unknown parameters such as facet reflectivity or varying coupling efficiencies, which directly contribute to the uncertainty of the measurement. We present a loss measurement technique, which takes advantage of the differential loss between multiple paths in an arrayed waveguide structure, in which we are able to gather statistics on propagation loss from several waveguides in a single measurement. This arrayed waveguide structure is characterized using a swept-wavelength interferometer, enabling the analysis of the arrayed waveguide transmission as a function of group delay between waveguides. Loss extraction is only dependent on the differential path length between arrayed waveguides and is therefore extracted independently from on and off-chip coupling efficiencies, which proves to be an accurate and reliable method of loss characterization. This method is applied to characterize the loss of the silicon photonic platform at Sandia Labs with an uncertainty of less than 0.06 dB/cm.
Stark, Andrew S.; Yang, Benjamin B.; Ward, Chris W.; Brothers, Timothy B.; Wagner, Brent W.; Langston, Jerrod L.; Bottenfield, Christian B.; Saha, Gareeyasee S.; Lavrencik, Justin L.; Ralph, Stephen E.; Paollela, Arthur P.; Middleton, Charles M.; DeSalvo, Richard D.; Gehl, M.; DeRose, Christopher T.; Lentine, Anthony L.
Stark, Andrew S.; Yang, Benjamin B.; Ward, Chris W.; Davis, Kyle D.; Brothers, Tim B.; Wagner, Brent W.; Langston, Jerrod L.; Bottenfield, Christian B.; Saha, Gareeyasee S.; Lavrencik, Justin L.; Ralph, Stephen E.; Paollela, Arthur P.; Middleton, Charles M.; DeSalvo, Richard D.; Gehl, M.; DeRose, Christopher T.; Lentine, Anthony L.
An 11-channel 1-GHz bandwidth silicon photonic AWG was fabricated and measured in the lab. Two photonic architectures are presented: (1) RF-envelope detector, and (2) RF downconvertor for digital systems. The RF-envelope detector architecture was modeled based on the demonstrated AWG characteristics to determine estimated system-level RF receiver performance.
Gehl, M.; Stark, Andrew S.; Ward, Chris W.; Yang, Benjamin B.; Brothers, Tim B.; Langston, Jerrod L.; Bottenfield, Christian B.; Saha, Gareeyasee S.; Lavrencik, Justin L.; Ralph, Stephen E.; Paollela, Arthur P.; Middleton, Charles M.; DeSalvo, Richard D.; Gehl, M.; DeRose, Christopher T.; Lentine, Anthony L.
We present a quantitative analysis of the correlation of resonant wavelength variation with process variables, and find that 50% of the resonant wavelength variation for microrings is due to systematic process conditions. We also discuss the improvement of device uniformity by mitigating these systematic variations.
We present our experimental results of ultra efficient (up to 2.16 nm/mW) thermally tunable modulators with n-Type heaters and the Si substrate removed. To our knowledge, this is the most efficient thermally tunable modulator demonstrated at 1550nm to date. We include results of externally heated modulators with commensurate performance enhancements through substrate removal.
We demonstrate a silicon photonic transceiver circuit for high-speed discrete variable quantum key distribution that employs a common structure for transmit and receive functions. The device is intended for use in polarization-based quantum cryptographic protocols, such as BB84. Our characterization indicates that the circuit can generate the four BB84 states (TE/TM/45°/135° linear polarizations) with >30 dB polarization extinction ratios and gigabit per second modulation speed, and is capable of decoding any polarization bases differing by 90° with high extinction ratios.