For several years now quantum computing has been viewed as a new paradigm for certain computing applications. Of particular importance to this burgeoning field is the development of an algorithm for factoring large numbers which obviously has deep implications for cryptography and national security. Implementation of these theoretical ideas faces extraordinary challenges in preparing and manipulating quantum states. The quantum transport group at Sandia has demonstrated world-leading, unique double quantum wires devices where we have unprecedented control over the coupling strength, number of 1 D channels, overlap and interaction strength in this nanoelectronic system. In this project, we study 1D-1D tunneling with the ultimate aim of preparing and detecting quantum states of the coupled wires. In a region of strong tunneling, electrons can coherently oscillate from one wire to the other. By controlling the velocity of the electrons, length of the coupling region and tunneling strength we will attempt to observe tunneling oscillations. This first step is critical for further development double quantum wires into the basic building block for a quantum computer, and indeed for other coupled nanoelectronic devices that will rely on coherent transport. If successful, this project will have important implications for nanoelectronics, quantum computing and information technology.
The trajectory and entrainment properties of a transverse jet are important to a variety of engineering applications. This study seeks to develop actuation strategies that manipulate the penetration, spread, and vortical structures of the tranverse jet, based on simple vorticity perturbations at the nozzle edge. We use three-dimensional vortex simulations of a transverse jet at high Reynolds number to examine four prototypical actuations, all at a jet-to-crossflow velocity ratio of r = 7. These actuations include a delta-tab on the windward edge of the jet nozzle as well as periodic modulations and inversions of wall-normal vorticity in the shear layer. Small modifications to the vorticity on nascent shear layer are found to have a significant impact on the jet evolution - creating jets that remain confined and penetrate further into the crossflow, or, alternately, jets that quickly spread in the spanwise direction and bend downstream. Vorticity perturbations also hasten or delay the formation of counter-rotating vorticity by modifying the folding of shear-layer segments.
Annual groundwater sampling was conducted at the Sandia National Laboratories' Mixed Waste Landfill (MWL) in April 2005. Seven monitoring wells were sampled using a Bennett{trademark} pump in accordance with the April 2005 Mini-Sampling and Analysis Plan for the MWL (SNL/NM 2005). The samples were analyzed off site at General Engineering Laboratories, Inc. for a broad suite of radiochemical and chemical parameters, and the results are presented in this report. Sample splits were also collected from several of the wells by the New Mexico Environment Department U.S. Department of Energy Oversight Bureau; however, the split sample results are not included in this report. The results of the April 2005 annual groundwater monitoring conducted at the MWL showed constituent concentrations within the historical ranges for the site and indicated no evidence of groundwater contamination from the landfill.
This meeting will continue to cover fundamentals and applications of photoionization and photodetachment, including valence and core-level phenomena and applications to reaction dynamics, ultrashort laser pulses and the study of exotic molecules and anions.
Nanostructured materials are the basis for emerging technologies, such as MEMS, NEMS, sensors, and flexible electronics, that will dominate near term advances in nanotechnology. These technologies are often based on devices containing layers of nanoscale polymer, ceramic and metallic films and stretchable interconnects creating surfaces and interfaces with properties and responses that differ dramatically from bulk counterparts. The differing properties can induce high interlaminar stresses that lead to wrinkling, delamination, and buckling in compression [1,2], and film fracture and decohesion in tension. [3] However, the relationships between composition, structure and properties, and especially adhesion and fracture, are not well-defined at the nanoscale. These relationships are critical to assuring performance and reliability of nanostructured materials and devices. They are also critical for building materials science based predictive models of structure and behavior.
This report suggests a generic set of attack approaches that are expected to be used against Industrial Control Systems that have been built according to a specific reference model for control systems. The posed attack approaches are ordered by the most desirable, based upon the goal of an attacker. Each attack approach is then graded by the category of adversary that would be capable of utilizing that attack approach. The goal of this report is to identify necessary levels of security required to prevent certain types of attacks against Industrial Control Systems.
This report focuses on and presents the capabilities of insulator-based dielectrophoresis (iDEP) microdevices for the concentration and removal of water-borne bacteria, spores and inert particles. The dielectrophoretic behavior exhibited by the different particles of interest (both biological and inert) in each of these systems was observed to be a function of both the applied electric field and the characteristics of the particle, such as size, shape, and conductivity. The results obtained illustrate the potential of glass and polymer-based iDEP devices to act as a concentrator for a front-end device with significant homeland security and industrial applications for the threat analysis of bacteria, spores, and viruses. We observed that the polymeric devices exhibit the same iDEP behavior and efficacy in the field of use as their glass counterparts, but with the added benefit of being easily mass fabricated and developed in a variety of multi-scale formats that will allow for the realization of a truly high-throughput device. These results also demonstrate that the operating characteristics of the device can be tailored through the device fabrication technique utilized and the magnitude of the electric field gradient created within the insulating structures. We have developed systems capable of handling numerous flow rates and sample volume requirements, and have produced a deployable system suitable for use in any laboratory, industrial, or clinical setting.
Microsystems are potentially exposed to laser irradiation during processing, diagnostic measurements, and, in some cases, device operation. The behavior of the components in an optical MEMS device that are irradiated by a laser needs to be optimized for reliable operation. Utilizing numerical simulations facilitates design and optimization. This paper reports on experimental and numerical investigations of the thermomechanical response of polycrystalline silicon microcantilevers that are 250 {micro}m wide, 500 {micro}m long, and 2.25 {micro}m thick when heated by an 808 nm laser. At laser powers above 400 mW significant deflection is observed during the laser pulse using a white light interferometer. Permanent deformation is detected at laser powers above 650 mW in the experiments. Numerical calculations using a coupled physics finite element code, Calagio, agree qualitatively with the experimental results. Both the experimental and numerical results reveal that the initial stress state is very significant. Microcantilevers deflect in the direction of their initial deformation upon irradiation with a laser.
We have investigated the valley splitting of two-dimensional electrons in high-quality Si/Si{sub 1-x}Ge{sub x} heterostructures under tilted magnetic fields. For all the samples in our study, the valley splitting at filling factor {nu} = 3 ({Delta}{sub 3}) is significantly different before and after the coincidence angle, at which energy levels cross at the Fermi level. On both sides of the coincidence, a linear dependence of {Delta}{sub 3} on the electron density was observed, while the slope of these two configurations differs by more than a factor of 2. We argue that screening of the Coulomb interaction from the low-lying filled levels, which also explains the observed spin-dependent resistivity, is responsible for the large difference of {Delta}{sub 3} before and after the coincidence.
Electrical contacts to semiconductors play a key role in electronics. For nanoscale electronic devices, particularly those employing novel low-dimensionality materials, contacts are expected to play an even more important role. Here we show that for quasi-one-dimensional structures such as nanotubes and nanowires, side contact with the metal only leads to weak band re-alignment, in contrast to bulk metal-semiconductor contacts. Schottky barriers are much reduced compared with the bulk limit, and should facilitate the formation of good contacts. However, the conventional strategy of heavily doping the semiconductor to obtain ohmic contacts breaks down as the nanowire diameter is reduced. The issue of Fermi level pinning is also discussed, and it is demonstrated that the unique density of states of quasi-one-dimensional structures make them less sensitive to this effect. Our results agree with recent experimental work, and should apply to a broad range of quasi-one-dimensional materials.
HfB{sub 2} and ZrB{sub 2} are of interest for thermal protection materials because of favorable thermal stability, mechanical properties, and oxidation resistance. We have made dense diboride ceramics with 2 to 20 % SiC by hot pressing at 2000 C and 5000 psi. High-resolution transmission electron microscopy (TEM) shows very thin grain boundary phases that suggest liquid phase sintering. Fracture toughness measurements give RT values of 4 to 6 MPam{sup 1/2}. Four-pt flexure strengths measured in air up to 1450 C were as high as 450-500 MPa. Thermal diffusivities were measured to 2000 C for ZrB{sub 2} and HfB{sub 2} ceramics with SiC contents from 2 to 20%. Thermal conductivities were calculated from thermal diffusivities and measured heat capacities. Thermal diffusivities were modeled using different two-phase composite models. These materials exhibit excellent high temperature properties and are attractive for further development for thermal protection systems.
The development and verification of a one-dimensional constant density material thermal response code with ablation is presented. The implicit time integrator, control volume finite element spatial discretization, and Newton's method for nonlinear iteration on the entire system of equations have been implemented and verified for variable material properties, Q* ablation, and thermochemical ablation problems. Timing studies were performed, and when accuracy is considered the method developed in this study exhibits significant time savings over the property lagging approach. In addition, maximizing the Newton solver's convergence rate by including sensitivities to the surface recession rate reduces the overall computational time when compared to excluding recession rate sensitivites.
The telecommunication network is recognized by the federal government as one of the critical national infrastructures that must be maintained and protected against debilitating attacks. We have previously shown how failures in the telecommunication network can quickly lead to telecommunication congestion and to extended delays in successful call completion. However, even if the telecom network remains fully operational, the special telecommunication demands that materialize at times of emergencies, and dynamically change based on subscriber behavior, can also adversely affect the performance of the overall telecommunication network. The Network Simulation Modeling and Analysis Research Tool (N-SMART) has been developed by Bell Labs as part of its work with the National Infrastructure Simulation and Analysis Center. This center is a joint program at Sandia National Laboratories and Los Alamos National Laboratory, funded and managed by the Department of Homeland Security's (DHS) Preparedness Directorate. N-SMART is a discrete event (call level) telecom model that simulates capacities, blocking levels, retrials, and time to complete calls for both wireline and wireless networks. N-SMART supports the capability of simulating subscriber reattempt behaviour under various scenarios. Using this capability we show how the network can be adversely impacted by sudden changes in subscriber behavior. We also explore potential solutions and ways of mitigating those impacts.
Micro Total Analysis Systems - Proceedings of MicroTAS 2006 Conference: 10th International Conference on Miniaturized Systems for Chemistry and Life Sciences
Micro Total Analysis Systems - Proceedings of MicroTAS 2006 Conference: 10th International Conference on Miniaturized Systems for Chemistry and Life Sciences