Radio frequency (RF) devices are becoming more multi-band, increasing the number of filters and other front-end components while simultaneously pushing towards reduced cost, size, weight, and power (CSWaP). One approach to reducing CSWaP is to augment the achievable functionalities of electromechanical/acoustic filtering chips to include "active" and nonlinear functionalities, such as gain and mixing. The acoustoelectric (AE) effect could enable such active acoustic wave devices. We have examined the AE effect with a leaky surface acoustic wave (LSAW) in a monolithic structure of epitaxial indium gallium arsenide (In GaAs) on lithium niobate (LiNb0 3 ). This lead to experimentally demonstrated state-of-the-art SAW amplifier performance in terms of gain per acoustic wavelength, reduced power consumption, and increased power efficiency. We quantitatively compare the amplifier performance to previous notable works and discuss the outlook of active acoustic wave components using this material platform. Ultimately, this could lead to smaller, higher-performance RF signal processors for communications applications.
We demonstrate a platform for phase and amplitude modulation in silicon nitride photonic integrated circuits via piezo-optomechanical coupling using tightly mechanically coupled aluminum nitride actuators. The platform, fabricated in a CMOS foundry, enables scalable active photonic integrated circuits for visible wavelengths, and the piezoelectric actuation functions without performance degradation down to cryogenic temperatures. As an example of the potential of the platform, we demonstrate a compact (∼40 µm diameter) silicon nitride ring resonator modulator operating at 780 nm with intrinsic quality factors in excess of 1.5 million, >10 dB change in extinction ratio with 2 V applied, a switching time less than 4 ns, and a switching energy of 0.5 pJ/bit. We characterize the exemplary device at room temperature and 7 K. At 7 K, the device obtains a resistance of approximately 20 teraohms, allowing it to operate with sub-picowatt electrical power dissipation. We further demonstrate a Mach-Zehnder modulator constructed in the same platform with piezoelectrically tunable phase shifting arms, with 750 ns switching time constant and 20 nW steady-state power dissipation at room temperature.
Active surface acoustic wave components have the potential to transform RF front ends by consolidating functionalities that currently occur across multiple chip technologies, leading to reduced insertion loss from converting back and forth between acoustic and electronic domains in addition to improved size and power efficiency. This letter demonstrates a significant advance in these active devices with a compact, high-gain, and low-power leaky surface acoustic wave amplifier based on the acoustoelectric effect. Devices use an acoustically thin semi-insulating InGaAs surface film on a YX lithium niobate substrate to achieve exceptionally high acoustoelectric interaction strength via an epitaxial In0.53Ga0.47As(P)/InP quaternary layer structure and wafer-scale bonding. We demonstrate 1.9 dB of gain per acoustic wavelength and power consumption of 90 mW for 30 dB of electronic gain. Despite the strong intrinsic leaky propagation loss, 5 dB of terminal gain is obtained for a semiconductor that is only 338 μm long due to state-of-the-art heterogenous integration and an improved material platform.
This paper demonstrates a monolithic surface acoustic wave amplifier fabricated by state-of-the-art heterogenous integration of a IH-V InGaAs-based epitaxial material stack and LiNb03. Due to the superior properties of the materials employed, we observe electron gain and also non-reciprocal gain in excess of 30dB with reduced power consumption. Additionally, we present a framework for performance optimization as a function of material parameters for a targeted gain. This platform enables further advances in active and non-reciprocal piezoelectric acoustic devices.
This paper describes the theoretical and experimental investigation of interdigitated transducers capable of producing focused acoustical beams in thin film piezoelectric materials. A mathematical formalism describing focused acoustical beams, lamb beams, is presented and related to their optical counterparts in two- and three-dimensions. A novel Fourier domain transducer design methodology is developed and utilized to produce near diffraction limited focused beams within a thin film AlN membrane. The properties of the acoustic beam formed by the transducer were studied by means of Doppler vibrometry implemented with a scanning confocal balanced homodyne interferometer. The Fourier domain modal analysis confirmed that 83% of the acoustical power was delivered to the targeted focused beam which was constituted from the lowest order symmetric mode, while 1% was delivered unintentionally to the beam formed from the anti-symmetric mode, and the remaining power was isotropically scattered. The transmission properties of the acoustic beams as they interact with devices with wavelength scale features were also studied, demonstrating minimal insertion loss for devices in which a subwavelength and pinhole apertures were included. [2018-0059]
Electric field-based frequency tuning of acoustic resonators at the material level provides an enabling technology for building complex tunable filters. Tunable acoustic resonators were fabricated in thin plates (h/λ ∼ 0.05) of X-cut lithium niobate (90°, 90°, ψ = 170°). Lithium niobate is known for its large electromechanical coupling (SH: K2 40%) and thus applicability for low-insertion loss and wideband filter applications. We demonstrate the effect of a DC bias to shift the resonant frequency by 0.4% by directly tuning the resonator material. The mechanism is based on the nonlinearities that exist in the piezoelectric properties of lithium niobate. Devices centered at 332 MHz achieved frequency tuning of 12 kHz/V through application of a DC bias.
Lithium niobate, due to its material properties, is often used for optical waveguides, optical modulators, and other linear and nonlinear optical applications. In this research, we present monolithically integrated microdisk resonators with an integrated ground plane fabricated from a commercially purchased lithium niobate on insulator wafer. Using this architecture, we demonstrate excitation of a 167MHz mechanical resonance as well as electro-optic modulation of a 1.93THz optical mode in a free-standing whispering gallery mode (WGM) resonator. By hovering a signal probe above the disk while grounding the device using the integrated ground plane, an electric field can be applied across the device which both induces an electro-optic effect as well as drives mechanical motion via the piezoelectric effect. Detection of the mechanical mode and electro-optic shift was performed by coupling to the high quality factor (Q = 454,000) optical modes of the microresonator using a tapered optical fiber.
The following report describes work performed under the LDRD program at Sandia National Laboratories October 2014 and September 2016. The work presented demonstrates the ability of Sandia Labs to develop state-of-the-art photonic devices based on thin film lithium niobate (LiNbO3 ). Section 1 provides an introduction to integrated LiNbO3 devices and motivation for developing thin film nonlinear optical systems. Section 2 describes the design, fabrication, and photonic performance of thin film optical microdisks fabricated from bulk LiNbO3 using a bulk implantation method developed at Sandia. Sections 3 and 4 describe the development of similar thin film LiNbO3 structures fabricated from LiNbO3 on insulator (LNOI) substrates and our demonstration of optical frequency conversion with state-of-the-art efficiency. Finally, Section 5 describes similar microdisk resonators fabricated from LNOI wafers with a buried metal layer, in which we demonstrate electro-optic modulation.
We demonstrate doubly resonant second harmonic generation from 1550 to 775 nm in microdisks fabricated from lithium niobate on insulator wafers. We use a novel phase matching technique to achieve a conversion efficiency of 0.167%/mW.
Dispersion engineering enables phase matching for nonlinear down conversion from 775nm to the telecom c-band in lithium niobite microdisk resonators without periodic poling. High rates of spontaneous creation of entangled photon pairs is observed.
Aluminum nitride (AlN) radio frequency (RF) MEMS filters utilize piezoelectric coupling for high-performance electrical filters with frequency diversity in a small form factor. Furthermore, the compatibility of AlN with CMOS fabrication makes AlN extremely attractive from a commercial standpoint. A technological hurdle has been the ability to package these suspended resonator devices at a wafer level with high yield. In this work, we describe wafer-level packaging (WLP) of AlN MEMS RF filters in an all silicon package with solder balls on nickel vanadium / gold (NiV/Au) bond pads that are subsequently ready for flip chip bonding. For this integration scheme, we utilize a 150 mm device wafer, fabricated in a CMOS foundry, and bond at the wafer level to a cavity silicon wafer, which hermetically encapsulates each device. The cavity wafer is then uniformly plasma etched back using a deep reactive ion etcher resulting in a 100 μm thick hermetic silicon lid encapsulating each die, balled with 250 μm 90/10 Pb/Sn solder balls and finally diced into individually packaged dies. Each die can be frequency-trimmed to an exact frequency by rapid temperature annealing the stress of the metallization layers of each resonator. The resulting technology yields a completely packaged wafer of 900 encapsulated die (14 mm2 by 800 μm thick) with multiple resonators and filters at various frequencies in each package.