Microfabrication methods have been applied to the fabrication of wire arrays suitable for use in Z. Self-curling GaAs/AlGaAs supports were fabricated as an initial route to make small wire arrays (4mm diameter). A strain relief structure that could be integrated with the wire was designed to allow displacements of the anode/cathode connections in Z. Electroplated gold wire arrays with integrated anode/cathode bus connections were found to be sufficiently robust to allow direct handling. Platinum and copper plating processes were also investigated. A process to fabricate wire arrays on any substrate with wire thickness up to 35 microns was developed. Methods to handle and mount these arrays were developed. Fabrication of wire arrays of 20mm diameter was demonstrated, and the path to 40mm array fabrication is clear. With some final investment to show array mounting into Z hardware, the entire process to produce a microfabricated wire array will have been demonstrated.
The key need that this project has addressed is a short-wave infrared light detector for ranging (LIDAR) imaging at temperatures greater than 100K, as desired by nonproliferation and work for other customers. Several novel device structures to improve avalanche photodiodes (APDs) were fabricated to achieve the desired APD performance. A primary challenge to achieving high sensitivity APDs at 1550 nm is that the small band-gap materials (e.g., InGaAs or Ge) necessary to detect low-energy photons exhibit higher dark counts and higher multiplication noise compared to materials like silicon. To overcome these historical problems APDs were designed and fabricated using separate absorption and multiplication (SAM) regions. The absorption regions used (InGaAs or Ge) to leverage these materials 1550 nm sensitivity. Geiger mode detection was chosen to circumvent gain noise issues in the III-V and Ge multiplication regions, while a novel Ge/Si device was built to examine the utility of transferring photoelectrons in a silicon multiplication region. Silicon is known to have very good analog and GM multiplication properties. The proposed devices represented a high-risk for high-reward approach. Therefore one primary goal of this work was to experimentally resolve uncertainty about the novel APD structures. This work specifically examined three different designs. An InGaAs/InAlAs Geiger mode (GM) structure was proposed for the superior multiplication properties of the InAlAs. The hypothesis to be tested in this structure was whether InAlAs really presented an advantage in GM. A Ge/Si SAM was proposed representing the best possible multiplication material (i.e., silicon), however, significant uncertainty existed about both the Ge material quality and the ability to transfer photoelectrons across the Ge/Si interface. Finally a third pure germanium GM structure was proposed because bulk germanium has been reported to have better dark count properties. However, significant uncertainty existed about the quantum efficiency at 1550 nm the necessary operating temperature. This project has resulted in several conclusions after fabrication and measurement of the proposed structures. We have successfully demonstrated the Ge/Si proof-of-concept in producing high analog gain in a silicon region while absorbing in a Ge region. This has included significant Ge processing infrastructure development at Sandia. However, sensitivity is limited at low temperatures due to high dark currents that we ascribe to tunneling. This leaves remaining uncertainty about whether this structure can achieve the desired performance with further development. GM detection in InGaAs/InAlAs, Ge/Si, Si and pure Ge devices fabricated at Sandia was shown to overcome gain noise challenges, which represents critical learning that will enable Sandia to respond to future single photon detection needs. However, challenges to the operation of these devices in GM remain. The InAlAs multiplication region was not found to be significantly superior to current InP regions for GM, however, improved multiplication region design of InGaAs/InP APDs has been highlighted. For Ge GM detectors it still remains unclear whether an optimal trade-off of parameters can achieve the necessary sensitivity at 1550 nm. To further examine these remaining questions, as well as other application spaces for these technologies, funding for an Intelligence Community post-doc was awarded this year.
Optical lime-domain reflectometry (OTDR) is an effeclive technique for locating faults in fiber communication links. The fact that most OTDR measurements are performed manually is a significant drawback, because it makes them too costly for use in many short-distance networks and too slow for use in military avionic platforms. Here we describe and demonstrate an automated, low-cost, real-time approach to fault monitoring that can be achieved by integrating OTDR functionality directly into VCSEL-based transceivers. This built-in test capability is straightforward to implement and relevant to both multimode and single mode networks. In-situ OTDR uses the transmitter VCSEL already present in data transceivers. Fault monitoring is performed by emitting a brief optical pulse into the fiber and then turning the VCSEL off. If a fault exists, a portion of the optical pulse returns to the transceiver after a time equal to the round-trip delay through the fiber. In multimode OTDR, the signal is detected by an integrated photodetector, while in single mode OTDR the VCSEL itself can be used as a detector. Modified driver electronics perform the measurement and analysis. We demonstrate that VCSEL-based OTDR has sufficient sensitivity to determine the location of most faults commonly seen in short-haul networks (i.e., the Fresnel reflections from improperly terminated fibers and scattering from raggedly-broken fibers). Results are described for single mode and multimode experiments, at both 850 nm and 1.3 μm. We discuss the resolution and sensitivity that have been achieved, as well as expected limitations for this novel approach to network monitoring.
The goal of our project was to examine a novel quantum cascade laser design that should inherently increase the output power of the laser while simultaneously providing a broad tuning range. Such a laser source enables multiple chemical species identification with a single laser and/or very broad frequency coverage with a small number of different lasers, thus reducing the size and cost of laser based chemical detection systems. In our design concept, the discrete states in quantum cascade lasers are replaced by minibands made of multiple closely spaced electron levels. To facilitate the arduous task of designing miniband-to-miniband quantum cascade lasers, we developed a program that works in conjunction with our existing modeling software to completely automate the design process. Laser designs were grown, characterized, and iterated. The details of the automated design program and the measurement results are summarized in this report.
The goal of this LDRD was to investigate III-antimonide/nitride based materials for unique semiconductor properties and applications. Previous to this study, lack of basic information concerning these alloys restricted their use in semiconductor devices. Long wavelength emission on GaAs substrates is of critical importance to telecommunication applications for cost reduction and integration into microsystems. Currently InGaAsN, on a GaAs substrate, is being commercially pursued for the important 1.3 micrometer dispersion minima of silica-glass optical fiber; due, in large part, to previous research at Sandia National Laboratories. However, InGaAsN has not shown great promise for 1.55 micrometer emission which is the low-loss window of single mode optical fiber used in transatlantic fiber. Other important applications for the antimonide/nitride based materials include the base junction of an HBT to reduce the operating voltage which is important for wireless communication links, and for improving the efficiency of a multijunction solar cell. We have undertaken the first comprehensive theoretical, experimental and device study of this material with promising results. Theoretical modeling has identified GaAsSbN to be a similar or potentially superior candidate to InGaAsN for long wavelength emission on GaAs. We have confirmed these predictions by producing emission out to 1.66 micrometers and have achieved edge emitting and VCSEL electroluminescence at 1.3 micrometers. We have also done the first study of the transport properties of this material including mobility, electron/hole mass, and exciton reduced mass. This study has increased the understanding of the III-antimonide/nitride materials enough to warrant consideration for all of the target device applications.
This report describes the research accomplishments achieved under the LDRD Project 'Radiation Hardened Optoelectronic Components for Space-Based Applications.' The aim of this LDRD has been to investigate the radiation hardness of vertical-cavity surface-emitting lasers (VCSELs) and photodiodes by looking at both the effects of total dose and of single-event upsets on the electrical and optical characteristics of VCSELs and photodiodes. These investigations were intended to provide guidance for the eventual integration of radiation hardened VCSELs and photodiodes with rad-hard driver and receiver electronics from an external vendor for space applications. During this one-year project, we have fabricated GaAs-based VCSELs and photodiodes, investigated ionization-induced transient effects due to high-energy protons, and measured the degradation of performance from both high-energy protons and neutrons.
Many MEMS-based components require optical monitoring techniques using optoelectronic devices for converting mechanical position information into useful electronic signals. While the constituent piece-parts of such hybrid opto-MEMS components can be separately optimized, the resulting component performance, size, ruggedness and cost are substantially compromised due to assembly and packaging limitations. GaAs MOEMS offers the possibility of monolithically integrating high-performance optoelectronics with simple mechanical structures built in very low-stress epitaxial layers with a resulting component performance determined only by GaAs microfabrication technology limitations. GaAs MOEMS implicitly integrates the capability for radiation-hardened optical communications into the MEMS sensor or actuator component, a vital step towards rugged integrated autonomous microsystems that sense, act, and communicate. This project establishes a new foundational technology that monolithically combines GaAs optoelectronics with simple mechanics. Critical process issues addressed include selectivity, electrochemical characteristics, and anisotropy of the release chemistry, and post-release drying and coating processes. Several types of devices incorporating this novel technology are demonstrated.
Selectively oxidized vertical cavity lasers emitting at 1294 nm using InGaAsN quantum wells are reported for the first time which operate continuous wave at and above room temperature. The lasers employ two n-type Al{sub 0.94}Ga{sub 0.06}As/GaAs distributed Bragg reflectors each with a selectively oxidized current aperture adjacent to the optical cavity, and the top output mirror contains a tunnel junction to inject holes into the active region. Continuous wave single mode lasing is observed up to 55 C. These lasers exhibit the longest wavelength reported to date for vertical cavity surface emitting lasers grown on GaAs substrates.
In-plane magnetic field photoluminescence spectra from n series of n-type modulation doped GaAs/Al{sub 0.3}Ga{sub 0.7}As coupled double quantum wells show distinctive doublet structures related to the tunnel-split ground sub-level states. The magnetic field behavior of the upper transition from the antisymmetric state strongly depends on sample mobility. In a lower mobility sample, the transition energy displays an N-type kink with field (namely a maximum followed by a minimum), whereas higher mobility samples have a linear dependence. The former is attributed to a coupling mechanism due to homogeneous broadening of the electron and hole states. The results are in good agreement with recent theoretical calculations.
The authors have investigated the properties of GaAsSb/InGaAs type-II bilayer quantum well structures grown by molecule beam epitaxy for use in long-wavelength lasers on GaAs substrates. Structures with layer, strains and thicknesses designed to be thermodynamically stable against dislocation formation exhibit room-temperature photoluminescence at wavelengths as long as 1.43 {mu}m. The photoluminescence emission wavelength is significantly affected by growth temperature and the sequence of layer growth (InGaAs/GaAsSb vs GaAsSb/InGaAs), suggesting that Sb and/or In segregation results in non-ideal interfaces under certain growth conditions. At low injection currents, double heterostructure lasers with GaAsSb/InGaAs bilayer quantum well active regions display electroluminescence at wavelengths comparable to those obtained in photoluminescence, but at higher currents the electroluminescence shifts to shorter wavelengths. Lasers have been obtained with threshold current densities as low as 120 A/cm{sup 2} at 1.17 {mu}m, and 2.1 kA/cm{sup 2} at 1.21 {mu}m.
Strained-layer semiconductor films offer tremendous potential with regards to optoelectronic applications for high speed communications, mobile communications, sensing, and novel logic devices. It is an unfortunate reality that many of the possible film/substrate combinations that could be exploited technologically are off limits because of large differences in lattice parameters, chemical compatibilities, or thermal expansion rates. These mechanical, chemical, and thermal incompatibilities manifest themselves primarily in terms of lattice defects such as dislocations and antiphase boundaries, and in some cases through enhanced surface roughness. An additional limitation, from a production point of view, is money. Device manufacturers as a rule want the cheapest substrate possible. Freeing the heteroepitaxial world of the bonds of (near) lattice matching would vastly expand the types of working devices that could be grown. As a result, a great deal of effort has been expended finding schemes to integrate dissimilar film/substrate materials while preserving the perfection of the film layer. One such scheme receiving significant attention lately is the so-called compliant substrate approach.
The authors report data on GaAsSb single quantum well lasers grown on GaAs substrates. Room temperature pulsed emission at 1.275 {micro}m in a 1,250 {micro}m-long device has been observed. Minimum threshold current densities of 535 A/cm{sup 2} were measured in 2000 {micro}m long lasers. The authors also measured internal losses of 2--5 cm{sup {minus}1}, internal quantum efficiencies of 30-38% and characteristic temperature T{sub 0} of 67--77 C. From these parameters a gain constant G{sub 0} of 1,660 cm{sup {minus}1} and a transparency current density J{sub tr} of 134 A/cm{sup 2} were calculated. The results indicate the potential for fabricating 1.3 {micro}m VCSELs from these materials.
A high voltage GaAs HBT with an open-base collector breakdown voltage of 106 V and an open-emitter breakdown voltage of 134 V has been demonstrated. A high quality 9.0 {micro}m thick collector doped to 2.0{times}10{sup 15} cm{sup {minus}3} grown by MBE on a doped GaAs substrate is the key to achieving this breakdown. These results were achieved for HBTs with 4{times}40 {micro}m{sup 2} emitters. DC current gain of 38 at 6,000 A/cm{sup 2} was measured.
This LDRD project explored the fundamental physics of a new class of photonic materials, photonic bandgap structures (PBG), and examine its unique properties for the design and implementation of photonic devices on a nano-meter length scale for the control and confinement of light. The low loss, highly reflective and quantum interference nature of a PBG material makes it one of the most promising candidates for realizing an extremely high-Q resonant cavity, >10,000, for optoelectronic applications and for the exploration of novel photonic physics, such as photonic localization, tunneling and modification of spontaneous emission rate. Moreover, the photonic bandgap concept affords us with a new opportunity to design and tailor photonic properties in very much the same way we manipulate, or bandgap engineer, electronic properties through modern epitaxy.
Mixed arsenide/antimonide materials have unique properties which make them potentially valuable for use in VCSELs operating at wavelengths longer than 1 {micro}m. The authors present their progress in applying these materials to VCSEL designs for 1--1.55 {micro}m.
