Publications

Abstract not provided.

This report describes the research accomplishments achieved under the LDRD Project 'Radiation Hardened Optoelectronic Components for Space-Based Applications.' The aim of this LDRD has been to investigate the radiation hardness of vertical-cavity surface-emitting lasers (VCSELs) and photodiodes by looking at both the effects of total dose and of single-event upsets on the electrical and optical characteristics of VCSELs and photodiodes. These investigations were intended to provide guidance for the eventual integration of radiation hardened VCSELs and photodiodes with rad-hard driver and receiver electronics from an external vendor for space applications. During this one-year project, we have fabricated GaAs-based VCSELs and photodiodes, investigated ionization-induced transient effects due to high-energy protons, and measured the degradation of performance from both high-energy protons and neutrons.

Reviews of normal breakdown and current induced avalanche breakdown mechanisms in silicon power transistors are presented. We show the applicability of the current induced avalanche model to heavy ion induced burnouts. Finally, we present solutions to current induced avalanche in silicon power semiconductors. 7 refs., 5 figs.

28C256 EEPROM total dose and dose-rate results are presented. Mode dependent total dose failure occurred at 9.5 krad(Si) when writing and 33 krad(Si) when reading. Average upset and latch-up thresholds were 3.8 /times/ 10/sup 8/ rad(Si)/s and 7.7 /times/ 10/sup 8/ rad(Si)/s, respectively. 3 refs., 5 tabs.