Publications

Abstract not provided.

Abstract not provided.

Abstract not provided.

Abstract not provided.

Abstract not provided.

Abstract not provided.

Abstract not provided.

Abstract not provided.

Abstract not provided.

Abstract not provided.

The performance and efficiency of power devices depends on both high breakdown voltage and low on-state resistance. For semiconductor devices, the critical electric field (EC) affecting breakdown scales approximately as Eg25 [1], making the wide bandgap semiconductor materials logical candidates for high voltage power electronics devices. In particular, AlGaN alloys approaching AlN with its 6.2 eV bandgap have an estimated EC approaching 5x that of GaN. This factor makes AlN/AlGaN high election mobility transistors (HEMTs) extremely interesting as candidate power electronic devices. Until now, such devices have been hampered, ostensibly due to the difficulty of making Ohmic contacts to AlGaN alloys with high Al composition. With the use of an AlN barrier etch and regrowth procedure for Ohmic contact formation, we are now able to report on an AlN/AlGaN HEMT with 85% Al.

Inductive coupling and matching networks are used to increase the bandwidth of filters realized with aluminum nitride contour-mode resonators. Filter bandwidth has been doubled using a wirebonded combination of a wafer-level-packaged resonator chip and a high-Q integrated inductor chip. The three-pole filters have a center frequency near 500 MHz, an area of 9 mm × 9 mm, insertion loss of < 5 dB for a bandwidth of 0.4%, and a resonator unloaded Q of 1600.

A unique, micro-scale architecture is proposed to create a novel hybrid concentrated photovoltaic system. Micro-scale (sub-millimeter wide), multi-junction cells are attached to a large-area silicon cell backplane (several inches wide) that can optimally collect both direct and diffuse light. By using multi- junction III-V cells, we can get the highest possible efficiency of the direct light input. In addition, by collecting the diffuse light in the large-area silicon cell, we can produce power on cloudy days when the concentrating cells would have minimal output. Through the use of micro-scale cells and lenses, the overall assembly will provide higher efficiency than conventional concentrators and flat plates, while keeping the form factor of a flat plate module. This report describes the hybrid concept, the design of a prototype, including the PV cells and optics, and the experimental results.

Flip-chip heterogeneously integrated n-p-n InGaP/GaAs heterojunction bipolar transistors (HBTs) with integrated thermal management on wide-bandgap AlN substrates followed by GaAs substrate removal are demonstrated. Without thermal management, substrate removal after integration significantly aggravates self-heating effects, causing poor $I$-$V$ characteristics due to excessive device self-heating. An electrothermal codesign scheme is demonstrated that involves simulation (design), thermal characterization, fabrication, and evaluation. Thermoreflectance thermal imaging, electrical-temperature sensitive parameter-based thermometry, and infrared thermography were utilized to assess the junction temperature rise in HBTs under diverse configurations. In order to reduce the thermal resistance of integrated devices, passive cooling schemes assisted by structural modification, i.e., positioning indium bump heat sinks between the devices and the carrier, were employed. By implementing thermal heat sinks in close proximity to the active region of flip-chip integrated HBTs, the junction-to-baseplate thermal resistance was reduced over a factor of two, as revealed by junction temperature measurements and improvement of electrical performance. The suggested heterogeneous integration method accounts for not only electrical but also thermal requirements providing insight into realization of advanced and robust III-V/Si heterogeneously integrated electronics.

Abstract not provided.

Abstract not provided.

Abstract not provided.

Abstract not provided.

Abstract not provided.

Abstract not provided.

Abstract not provided.

Abstract not provided.

Abstract not provided.

Radio frequency microelectromechanical system (RF MEMS) devices are microscale devices that achieve superior performance relative to other technologies by taking advantage of the accuracy, precision, materials, and miniaturization available through microfabrication. To do this, these devices use their mechanical and electrical properties to perform a specific RF electrical function such as switching, transmission, or filtering. RF MEMS has been a popular area of research since the early 1990s, and within the last several years, the technology has matured sufficiently for commercialization and use in commercial market systems.

Abstract not provided.