Publications

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The attachment of dopant precursor molecules to depassivated areas of hydrogen-terminated silicon templated with a scanning tunneling microscope (STM) has been used to create electronic devices with subnanometer precision, typically for quantum physics experiments. This process, which we call atomic precision advanced manufacturing (APAM), dopes silicon beyond the solid-solubility limit and produces electrical and optical characteristics that may also be useful for microelectronic and plasmonic applications. However, scanned probe lithography lacks the throughput required to develop more sophisticated applications. Here, we demonstrate and characterize an APAM device workflow where scanned probe lithography of the atomic layer resist has been replaced by photolithography. An ultraviolet laser is shown to locally and controllably heat silicon above the temperature required for hydrogen depassivation on a nanosecond timescale, a process resistant to under- and overexposure. STM images indicate a narrow range of energy density where the surface is both depassivated and undamaged. Modeling that accounts for photothermal heating and the subsequent hydrogen desorption kinetics suggests that the silicon surface temperatures reached in our patterning process exceed those required for hydrogen removal in temperature-programmed desorption experiments. A phosphorus-doped van der Pauw structure made by sequentially photodepassivating a predefined area and then exposing it to phosphine is found to have a similar mobility and higher carrier density compared with devices patterned by STM. Lastly, it is also demonstrated that photodepassivation and precursor exposure steps may be performed concomitantly, a potential route to enabling APAM outside of ultrahigh vacuum.

Direct Numerical Simulations (DNS) data of Moderate or Intense Low-oxygen Dilution (MILD) combustion are analysed to identify the contributions of the autoignition and flame modes. This is performed using an extended Chemical Explosive Mode Analysis (CEMA) which accounts for diffusion effects allowing it to discriminate between deflagration and autoignition. This analysis indicates that in premixed MILD combustion conditions, the main combustion mode is ignition for all dilution and turbulence levels and for the two reactant temperature conditions considered. In non-premixed conditions, the preponderance of the ignition mode was observed to depend on the axial location and mixture fraction stratification. With a large mixture fraction lengthscale, ignition is more preponderant in the early part of the domain while the deflagrative mode increases further downstream. On the other hand, when the mixture fraction lengthscale is small, sequential autoignition is observed. Finally, the various combustion modes are observed to correlate strongly with mixture fraction where lean mixtures are more likely to autoignite while stoichiometric and rich mixtures are more likely to react as deflagrative structures.

We propose a vertical TFET using atomic precision advanced manufacturing (APAM) to create an abrupt buried n++-doped source. We developed a gate stack that preserves the APAM source to accumulate holes above it, with a goal of band-to-band tunneling (BTBT) perpendicular to the gate – critical for the proposed device. A metal-insulator-semiconductor (MIS) capacitor shows hole accumulation above the APAM source, corroborated by simulation, demonstrating the TFET’s feasibility.

Modulation doping is a commonly adopted technique to create two-dimensional (2D) electrons or holes in semiconductor heterostructures. One constraint, however, is that the intentional dopants required for modulation doping are controlled and incorporated during the growth of heterostructures. Using undoped strained germanium quantum wells as the model material system, we show, in this work, that modulation doping can be achieved post-growth of heterostructures by ion implantation and dopant-activation anneals. The carrier density is controlled ex situ by varying the ion fluence and implant energy, and an empirical calibration curve is obtained. While the mobility of the resulting 2D holes is lower than that in undoped heterostructure field-effect transistors built using the same material, the achievable carrier density is significantly higher. Potential applications of this modulation-doping technique are discussed.

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The study of thermal effects, both classical and quantum, at cryogenic temperatures requires the use of on-chip, local, high-sensitivity thermometry. Carbon-platinum composites fabricated using focused ion beam (FIB) assisted deposition form a granular structure which is shown in this study to be uniquely suited for this application. Carbon-platinum thermometers deposited using a 24 pA ion beam current have high sensitivities below 1 K, comparable to the best cryogenic thermometers. In addition, these thermometers can be accurately placed to within 10s of nanometers on the chip using a mask-free process. They also have a weak magnetic field dependence, < 3% change in resistance with applied magnetic fields from 0 to 8 T. Finally, these thermometers are integrable into a variety of nanoscale devices due to the existing wide spread use of FIB.

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Coherent manipulation of quantum states is at the core of quantum information science (QIS). Many state-of-the-art quantum systems rely on microwave fields for quantum operations. As such, the microwave electromagnetic fields serve as the ideal "quantum bus" to integrate different types of QIS systems into a hybrid quantum system. Superconducting metamaterials are artificial materials consisting of arrays of superconducting resonant microstructures with sizes much smaller than the microwave wavelengths of interest. Superconducting metamaterials are a strong candidate medium for the microwave quantum bus, because the effective impedance, field distributions, and frequency response can all be controlled by engineering the microstructures, electrical bias, and magnetic flux while maintaining extremely low loss. In this project, we investigate the fundamental unit of a superconducting metamaterial - a resonator with physical dimensions much smaller than the microwave wavelengths - using NbTiN as the working superconductor, whose high operating temperatures and magnetic fields are desirable attributes for compatibility with a wide variety of quantum systems. We first studied the properties of sputtered NbTiN thin films by correlating the film thickness with the normal state resistivity, superconducting transition temperature, and resonances of transmission line resonators made from these films. We developed a process flow and designed a coplanar waveguide platform for studying small resonators. The platform significantly shortens the turnaround times of the resonator fabrication and testing cycles. Several resonators with different designs were fabricated and tested at 4 Kelvin. Resonances were observed in some resonator testers. Potential paths for improvements and future directions are discussed.

One big challenge of the emerging atomic precision advanced manufacturing (APAM) technology for microelectronics application is to realize APAM devices that operate at room temperature (RT). We demonstrate that semiclassical technology computer aided design (TCAD) device simulation tool can be employed to understand current leakage and improve APAM device design for RT operation. To establish the applicability of semiclassical simulation, we first show that a semiclassical impurity scattering model with the Fermi-Dirac statistics can explain the very low mobility in APAM devices quite well; we also show semiclassical TCAD reproduces measured sheet resistances when proper mobility values are used. We then apply semiclassical TCAD to simulate current leakage in realistic APAM wires. With insights from modeling, we were able to improve device design, fabricate Hall bars, and demonstrate RT operation for the very first time.

We employ a fully charge self-consistent quantum transport formalism, together with a heuristic elastic scattering model, to study the local density of state (LDOS) and the conductive properties of Si:P δ-layer wires at the cryogenic temperature of 4 K. The simulations allow us to explain the origin of shallow conducting sub-bands, recently observed in high resolution angle-resolved photoemission spectroscopy experiments. Our LDOS analysis shows the free electrons are spatially separated in layers with different average kinetic energies, which, along with elastic scattering, must be accounted for to reproduce the sheet resistance values obtained over a wide range of the δ-layer donor densities.

Superconducting quantum interference devices (SQUIDs) are extraordinarily sensitive to magnetic flux and thus make excellent current amplifiers for cryogenic applications. One such application of high interest to Sandia is the set-up and state read-out of quantum dot based qubits, where a qubit state is read out from a short current pulse (microseconds to milliseconds long) of approximately 100 pA, a signal that is easily corrupted by noise in the environment. A Parametric SQUID Amplifier can be high bandwidth (in the GHz range), low power dissipation (less than 1pW), and can be easily incorporated into multi-qubit systems. In this SAIL LDRD, we will characterize the noise performance of the parametric amplifier front end -- the SQUID -- in an architecture specific to current readout for spin qubits. Noise is a key metric in amplification, and identifying noise sources will allow us to optimize the system to reduce its effects, resulting in higher fidelity readout. This effort represents a critical step in creating the building blocks of a high speed, low power, parametric SQUID current amplifier that will be needed in the near term as quantum systems with many qubits begin to come on line in the next few years.

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Hydrogen lithography has been used to template phosphine-based surface chemistry to fabricate atomic-scale devices, a process we abbreviate as atomic precision advanced manufacturing (APAM). Here, we use mid-infrared variable angle spectroscopic ellipsometry (IR-VASE) to characterize single-nanometer thickness phosphorus dopant layers (δ-layers) in silicon made using APAM compatible processes. A large Drude response is directly attributable to the δ-layer and can be used for nondestructive monitoring of the condition of the APAM layer when integrating additional processing steps. The carrier density and mobility extracted from our room temperature IR-VASE measurements are consistent with cryogenic magneto-transport measurements, showing that APAM δ-layers function at room temperature. Finally, the permittivity extracted from these measurements shows that the doping in the APAM δ-layers is so large that their low-frequency in-plane response is reminiscent of a silicide. However, there is no indication of a plasma resonance, likely due to reduced dimensionality and/or low scattering lifetime.

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Atomic precision advanced manufacturing (APAM) offers creation of donor devices in an atomically thin layer doped beyond the solid solubility limit, enabling unique device physics. This presents an opportunity to use APAM as a pathfinding platform to investigate digital electronics at the atomic limit. Scaling to smaller transistors is increasingly difficult and expensive, necessitating the investigation of alternative fabrication paths that extend to the atomic scale. APAM donor devices can be created using a scanning tunneling microscope (STM). However, these devices are not currently compatible with industry standard fabrication processes. There exists a tradeoff between low thermal budget (LT) processes to limit dopant diffusion and high thermal budget (HT) processes to grow defect-free layers of epitaxial Si and gate oxide. To this end, we have developed an LT epitaxial Si cap and LT deposited Al2O3 gate oxide integrated with an atomically precise single-electron transistor (SET) that we use as an electrometer to characterize the quality of the gate stack. The surface-gated SET exhibits the expected Coulomb blockade behavior. However, the gate’s leverage over the SET is limited by defects in the layers above the SET, including interfaces between the Si and oxide, and structural and chemical defects in the Si cap. We propose a more sophisticated gate stack and process flow that is predicted to improve performance in future atomic precision devices.

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A physically unclonable function (PUF) is an embedded hardware security measure that provides protection against counterfeiting. In this article, we present our work on using an array of randomly magnetized micrometer-sized ferromagnetic bars (micromagnets) as a PUF. We employ a 4μm thick surface layer of nitrogen-vacancy (NV) centers in diamond to image the magnetic field from each micromagnet in the array, after which we extract the magnetic polarity of each micromagnet using image analysis techniques. Finally, after evaluating the randomness of the micromagnet array PUF and the sensitivity of the NV readout, we conclude by discussing the possible future enhancements for improved security and magnetic readout.

The attachment of dopant precursor molecules to depassivated areas of hydrogen-terminated silicon templated with a scanning tunneling microscope (STM) has been used to create electronic devices with sub-nanometer precision, typically for quantum physics demonstrations, and to dope silicon past the solid-solubility limit, with potential applications in microelectronics and plasmonics. However, this process, which we call atomic precision advanced manufacturing (APAM), currently lacks the throughput required to develop sophisticated applications because there is no proven scalable hydrogen lithography pathway. Here, we demonstrate and characterize an APAM device workflow where STM lithography has been replaced with photolithography. An ultraviolet laser is shown to locally heat silicon controllably above the temperature required for hydrogen depassivation. STM images indicate a narrow range of laser energy density where hydrogen has been depassivated, and the surface remains well-ordered. A model for photothermal heating of silicon predicts a local temperature which is consistent with atomic-scale STM images of the photo-patterned regions. Finally, a simple device made by exposing photo-depassivated silicon to phosphine is found to have a carrier density and mobility similar to that produced by similar devices patterned by STM.