Publications

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Hole spin qubits confined to lithographically - defined lateral quantum dots in Ge/SiGe heterostructures show great promise. On reason for this is the intrinsic spin - orbit coupling that allows all - electric control of the qubit. That same feature can be exploited as a coupling mechanism to coherently link spin qubits to a photon field in a superconducting resonator, which could, in principle, be used as a quantum bus to distribute quantum information. The work reported here advances the knowledge and technology required for such a demonstration. We discuss the device fabrication and characterization of different quantum dot designs and the demonstration of single hole occupation in multiple devices. Superconductor resonators fabricated using an outside vendor were found to have adequate performance and a path toward flip-chip integration with quantum devices is discussed. The results of an optical study exploring aspects of using implanted Ga as quantum memory in a Ge system are presented.

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Analog quantum simulation is an approach for studying physical systems that might otherwise be computationally intractable to simulate on classical high-performance computing (HPC) systems. The key idea behind analog quantum simulation is the realization of a physical system with a low-energy effective Hamiltonian that is the same as the low-energy effective Hamiltonian of some target system to be studied. Purpose-built nanoelectronic devices are a natural candidate for implementing the analog quantum simulation of strongly correlated materials that are otherwise challenging to study using classical HPC systems. However, realizing devices that are sufficiently large to study the properties of a non-trivial material system (e.g., those described by a Fermi-Hubbard model) will eventually require the fabrication, control, and measurement of at least 0(10) quantum dots, or other engineered quantum impurities. As a step toward large-scale analog or digital quantum simulation platforms based on nanoelectronic devices, we propose a new approach to analog quantum simulation that makes use of the large Hilbert space dimension of the electronic baths that are used to adjust the occupancy of one or a few engineered quantum impurities. This approach to analog quantum simulation allows us to study a wide array of quantum impurity models. We can further augment the computational power of such an approach by combining it with a classical computer to facilitate dynamical mean-field theory (DMFT) calculations. DMFT replaces the solution of a lattice impurity problem with the solution of a family of localized impurity problems with bath couplings that are adjusted to satisfy a self-consistency condition between the two models. In DMFT, the computationally challenging task is the high-accuracy solution of an instance of a quantum impurity model that is determined self-consistently in coordination with a mean-field calculation. We propose using one or a few engineered quantum impurities with adjustable couplings to baths to realize an analog quantum coprocessor that effects the solution of such a model through measurements of a physical quantum impurity, operating in coordination with a classical computer to achieve a self-consistent solution to a DMFT calculation. We focus on implementation details relevant to a number of technologies for which Sandia has design, fabrication, and measurement expertise. The primary technical advances outlined in this report concern the development of a supporting modeling capability. As with all analog quantum simulation platforms, the successful design and operation of individual devices depends critically on one's ability to predict the effective low-energy Hamiltonian governing its dynamics Our project has made this possible and lays the foundation for future experimental implementations.

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Lithographic quantum dots (QDs) are highly controllable few-level quantum systems created in semiconductor nanoelectronic devices, with a variety of scientific applications. These include technologically-driven applications like quantum computing and more fundamental applications in which they serve as a platform for exploring basic many-body physics. This document is a brief summary of my Ph.D. research so far and the directions with which I intend to continue it. Highlights include theoretical efforts to understand and design qubits in germanium hole QDs, as well as explorations of the possibility of using QDs coupled to nearby baths for analog simulation of quantum impurity models.

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In the field of semiconductor quantum dot spin qubits, there is growing interest in leveraging the unique properties of hole-carrier systems and their intrinsically strong spin-orbit coupling to engineer novel qubits. Recent advances in semiconductor heterostructure growth have made available high quality, undoped Ge/SiGe quantum wells, consisting of a pure strained Ge layer flanked by Ge-rich SiGe layers above and below. These quantum wells feature heavy hole carriers and a cubic Rashba-type spin-orbit interaction. Here, we describe progress toward realizing spin qubits in this platform, including development of multi-metal-layer gated device architectures, device tuning protocols, and charge-sensing capabilities. Iterative improvement of a three-layer metal gate architecture has significantly enhanced device performance over that achieved using an earlier single-layer gate design. We discuss ongoing, simulation-informed work to fine-tune the device geometry, as well as efforts toward a single-spin qubit demonstration.

In the field of semiconductor quantum dot spin qubits, there is growing interest in leveraging the unique properties of hole-carrier systems and their intrinsically strong spin-orbit coupling to engineer novel qubits. Recent advances in semiconductor heterostructure growth have made available high quality, undoped Ge/SiGe quantum wells, consisting of a pure strained Ge layer flanked by Ge-rich SiGe layers above and below. These quantum wells feature heavy hole carriers and a cubic Rashba-type spin-orbit interaction. Here, we describe progress toward realizing spin qubits in this platform, including development of multi-metal-layer gated device architectures, device tuning protocols, and charge-sensing capabilities. Iterative improvement of a three-layer metal gate architecture has significantly enhanced device performance over that achieved using an earlier single-layer gate design. We discuss ongoing, simulation-informed work to fine-tune the device geometry, as well as efforts toward a single-spin qubit demonstration.