Hydrogen lithography has been used to template phosphine-based surface chemistry to fabricate atomic-scale devices, a process we abbreviate as atomic precision advanced manufacturing (APAM). Here, we use mid-infrared variable angle spectroscopic ellipsometry (IR-VASE) to characterize single-nanometer thickness phosphorus dopant layers (δ-layers) in silicon made using APAM compatible processes. A large Drude response is directly attributable to the δ-layer and can be used for nondestructive monitoring of the condition of the APAM layer when integrating additional processing steps. The carrier density and mobility extracted from our room temperature IR-VASE measurements are consistent with cryogenic magneto-transport measurements, showing that APAM δ-layers function at room temperature. Finally, the permittivity extracted from these measurements shows that the doping in the APAM δ-layers is so large that their low-frequency in-plane response is reminiscent of a silicide. However, there is no indication of a plasma resonance, likely due to reduced dimensionality and/or low scattering lifetime.
Atomic precision advanced manufacturing (APAM) offers creation of donor devices in an atomically thin layer doped beyond the solid solubility limit, enabling unique device physics. This presents an opportunity to use APAM as a pathfinding platform to investigate digital electronics at the atomic limit. Scaling to smaller transistors is increasingly difficult and expensive, necessitating the investigation of alternative fabrication paths that extend to the atomic scale. APAM donor devices can be created using a scanning tunneling microscope (STM). However, these devices are not currently compatible with industry standard fabrication processes. There exists a tradeoff between low thermal budget (LT) processes to limit dopant diffusion and high thermal budget (HT) processes to grow defect-free layers of epitaxial Si and gate oxide. To this end, we have developed an LT epitaxial Si cap and LT deposited Al2O3 gate oxide integrated with an atomically precise single-electron transistor (SET) that we use as an electrometer to characterize the quality of the gate stack. The surface-gated SET exhibits the expected Coulomb blockade behavior. However, the gate’s leverage over the SET is limited by defects in the layers above the SET, including interfaces between the Si and oxide, and structural and chemical defects in the Si cap. We propose a more sophisticated gate stack and process flow that is predicted to improve performance in future atomic precision devices.
A physically unclonable function (PUF) is an embedded hardware security measure that provides protection against counterfeiting. In this article, we present our work on using an array of randomly magnetized micrometer-sized ferromagnetic bars (micromagnets) as a PUF. We employ a 4μm thick surface layer of nitrogen-vacancy (NV) centers in diamond to image the magnetic field from each micromagnet in the array, after which we extract the magnetic polarity of each micromagnet using image analysis techniques. Finally, after evaluating the randomness of the micromagnet array PUF and the sensitivity of the NV readout, we conclude by discussing the possible future enhancements for improved security and magnetic readout.
The attachment of dopant precursor molecules to depassivated areas of hydrogen-terminated silicon templated with a scanning tunneling microscope (STM) has been used to create electronic devices with sub-nanometer precision, typically for quantum physics demonstrations, and to dope silicon past the solid-solubility limit, with potential applications in microelectronics and plasmonics. However, this process, which we call atomic precision advanced manufacturing (APAM), currently lacks the throughput required to develop sophisticated applications because there is no proven scalable hydrogen lithography pathway. Here, we demonstrate and characterize an APAM device workflow where STM lithography has been replaced with photolithography. An ultraviolet laser is shown to locally heat silicon controllably above the temperature required for hydrogen depassivation. STM images indicate a narrow range of laser energy density where hydrogen has been depassivated, and the surface remains well-ordered. A model for photothermal heating of silicon predicts a local temperature which is consistent with atomic-scale STM images of the photo-patterned regions. Finally, a simple device made by exposing photo-depassivated silicon to phosphine is found to have a carrier density and mobility similar to that produced by similar devices patterned by STM.
We investigate the thermoelectric transport properties of the half-filled lowest Landau level v=1/2 in a gated two-dimensional hole system in a strained Ge/SiGe heterostructure. The electron-diffusion dominated regime is achieved below 600 mK, where the diffusion thermopower Sxxd at v=1/2 shows a linear temperature dependence. In contrast, the diffusion-dominated Nernst signal Sxyd of v=1/2 is found to approach zero, which is independent of the measurement configuration (sweeping magnetic field at a fixed hole density or sweeping the density by a gate at a fixed magnetic field).
The linear energy-momentum dispersion which arises from graphene’s underlying honeycomb lattice gives graphene its unique electronic properties unfound in conventional semiconductors. Theoretically speaking, when an electrostatic potential with hexagonal or honeycomb symmetry is imposed onto a two-dimensional electron/hole system, the band structure is modified in a way that the same linear energy-momentum dispersion could exist. Experimentally, there has not been any evidence from transport demonstrating the so-called “artificial graphene”. In this project, we attempt to create an artificial superlattice potential with hexagonal symmetry for two dimensional carriers in an undoped SiGe heterostructure by patterning a nanoscale hole array in a metallic gate. Using undoped heterostructures allows us to access a very wide density range, which covers the magic densities at which the Dirac points are expected. A process flow for fabricating such field-effect-transistor devices with a lattice constant as small as 90 nm is reported. Magneto-transport measurements performed at 0.3 K show that the superlattice potential in the quantum well in which the two-dimensional system resides is indeed modulated by the gates. However, no signature of the sought-after linear dispersion is observed in the transport data.
