Fabrication of Optical Interconnects Using Direct Laser Writing
Abstract not provided.
Publications
Search results
Jump to search filtersCompound Semiconductor Integrated Photonics for Avionics
Abstract not provided.
Wavelength Conversion Arrays for Optical and X-Ray Diagnostics at Z
Optical diagnostics play a central role in dynamic compression research. Currently, streak cameras are employed to record temporal and spectroscopic information in single-event experiments, yet are limited in several ways; the tradeoff between time resolution and total record duration is one such limitation. This project solves the limitations that streak cameras impose on dynamic compression experiments while reducing both cost and risk (equipment and labor) by utilizing standard high-speed digitizers and commercial telecommunications equipment. The missing link is the capability to convert the set of experimental (visible/x-ray) wavelengths to the infrared wavelengths used in telecommunications. In this report, we describe the problem we are solving, our approach, our results, and describe the system that was delivered to the customer. The system consists of an 8-channel visible-to-infrared converter with > 2 GHz 3-dB bandwidth.
Compound semiconductor integrated photonics at Sandia National Laboratories
Abstract not provided.
AlGaAs Photon Pair Sources
Abstract not provided.
Compound Semiconductor Photonic Integrated Circuits at Sandia National Laboratories
Abstract not provided.
Strain-Mediated Interfacial Diffusion and Shifts in ISB Transition Energies in AlN/AlGaN Superlattices
Abstract not provided.
Compound Semiconductor Photonic Integrated Circuits at Sandia National Laboratories
Abstract not provided.
Microscopic modeling of nitride intersubband absorption
Abstract not provided.
Selective layer disordering in intersubband Al0.028Ga0.972N/AlN superlattices with silicon nitride capping layer
Applied Physics Express
Selective layer disordering in an intersubband Al0.028Ga0.972N/AlN superlattice using a silicon nitride (SiNx) capping layer is demonstrated. The SiNx capped superlattice exhibits suppressed layer disordering under high-temperature annealing. Additionally, the rate of layer disordering is reduced with increased SiNx thickness. The layer disordering is caused by Si diffusion, and the SiNx layer inhibits vacancy formation at the crystal surface and ultimately, the movement of Al and Ga atoms across the heterointerfaces. Patterning of the SiNx layer results in selective layer disordering, an attractive method to integrate active and passive III-nitride-based intersubband devices.
Advanced High-Longevity GaAs Photoconductive Semiconductor Switches
Abstract not provided.
Photonic integration at sandia national laboratories
Integrated Photonics Research, Silicon and Nanophotonics, IPRSN 2015
This talk will discuss recent work on photonic integration for applications in optical signal processing, digital logic, and fundamental device research with an emphasis on InP-based photonic integrated circuit technology. © 2015 OSA.
Building a photonic streak camera
Abstract not provided.
Layer Disordering and Doping Compensation of an Intersubband AlGaN/AlN Superlattice by Silicon Implantation
Applied Physics Letters
Abstract not provided.
III-V Photonics at Sandia
Abstract not provided.
OMVPE Regrowth and Transverse QW Functionality for Photonic Integrated Circuits
Abstract not provided.
MULTI-FILAMENT PCSS MODULES TO REPLACE HIGH CURRENT PULSED POWER SWITCHES
Abstract not provided.
MULTI-FILAMENT PCSS MODULES TO REPLACE HIGH CURRENT PULSED POWER SWITCHES
Abstract not provided.
Photonic Integrated Circuit for Channelizing RF Signals (presentation)
Abstract not provided.
Photonic Integrated Circuit for Channelizing RF Signals
Abstract not provided.
InP Tunable Ring Resonator Filters (presentation)
Abstract not provided.
InP Tunable Ring Resonator Filters
Abstract not provided.
Cascaded double ring resonator filter with integrated SOAs
Optics InfoBase Conference Papers
We present a filter consisting of cascaded ring resonators with integrated SOAs. The filter demonstrates an extinction ratio >30 dB, a free spectral range of 56 GHz and a FWHM bandwidth of 3 GHz. © 2010 Optical Society of America.
Mutual injection locking of monolithically integrated coupled-cavity DBR lasers
IEEE Photonics Technology Letters
We present a photonic integrated circuit (PIC) composed of two strongly coupled distributed Bragg reflector (DBR) lasers. This PIC utilizes the dynamics of mutual injection locking to increase the relaxation resonance frequency from 3 GHz to beyond 30 GHz. Mutual injection-locking and external injection-locking operation are compared. © 2011 IEEE.
Enhanced Frequency Response in Monolithically Integrated Coupled Cavity Lasers and Electro-absorption Modulator (Presentation)
Abstract not provided.
Results 1–25 of 69