Publications

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This report describes the condition of the research environment at Sandia National Laboratories and outlines key environment improvement activities undertaken by the Office of the Chief Technology Officer and the Sandia Research Leadership Team during fiscal year 2013. The report also outlines Lab-level objectives related to the research environment for fiscal year 2014.

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In 1957, Sandia National Laboratories (Sandia) initiated its first programs in fundamental science, in support of its primary nuclear weapons mission. In 1974, Sandia initiated programs in fundamental science supported by the Department of Energy's Office of Science (DOE-SC). These latter programs have grown to the point where, today in 2011, support of Sandia's programs in fundamental science is dominated by that Office. In comparison with Sandia's programs in technology and mission applications, however, Sandia's programs in fundamental science are small. Hence, Sandia's fundamental science has been strongly influenced by close interactions with technology and mission applications. In many instances, these interactions have been of great mutual benefit, with synergies akin to a positive 'Casimir's spiral' of progress. In this report, we review the history of Sandia's fundamental science programs supported by the Office of Science. We present: (a) a technical and budgetary snapshot of Sandia's current programs supported by the various suboffices within DOE-SC; (b) statistics of highly-cited articles supported by DOE-SC; (c) four case studies (ion-solid interactions, combustion science, compound semiconductors, advanced computing) with an emphasis on mutually beneficial interactions between science, technology, and mission; and (d) appendices with key memos and reminiscences related to fundamental science at Sandia.

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This report presents an Executive Summary of the various elements of the Materials Sciences and Engineering Program which is funded by the Division of Materials Sciences and Engineering, Office of Basic Energy Sciences, U.S. Department of Energy at Sandia National Laboratories, New Mexico. A general programmatic overview is also presented.

For several years now quantum computing has been viewed as a new paradigm for certain computing applications. Of particular importance to this burgeoning field is the development of an algorithm for factoring large numbers which obviously has deep implications for cryptography and national security. Implementation of these theoretical ideas faces extraordinary challenges in preparing and manipulating quantum states. The quantum transport group at Sandia has demonstrated world-leading, unique double quantum wires devices where we have unprecedented control over the coupling strength, number of 1 D channels, overlap and interaction strength in this nanoelectronic system. In this project, we study 1D-1D tunneling with the ultimate aim of preparing and detecting quantum states of the coupled wires. In a region of strong tunneling, electrons can coherently oscillate from one wire to the other. By controlling the velocity of the electrons, length of the coupling region and tunneling strength we will attempt to observe tunneling oscillations. This first step is critical for further development double quantum wires into the basic building block for a quantum computer, and indeed for other coupled nanoelectronic devices that will rely on coherent transport. If successful, this project will have important implications for nanoelectronics, quantum computing and information technology.

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Macroscopic quantum states such as superconductors, Bose-Einstein condensates and superfluids are some of the most unusual states in nature. In this project, we proposed to design a semiconductor system with a 2D layer of electrons separated from a 2D layer of holes by a narrow (but high) barrier. Under certain conditions, the electrons would pair with the nearby holes and form excitons. At low temperature, these excitons could condense to a macroscopic quantum state either through a Bose-Einstein condensation (for weak exciton interactions) or a BCS transition to a superconductor (for strong exciton interactions). While the theoretical predictions have been around since the 1960's, experimental realization of electron-hole bilayer systems has been extremely difficult due to technical challenges. We identified four characteristics that if successfully incorporated into a device would give the best chances for excitonic condensation to be observed. These characteristics are closely spaced layers, low disorder, low density, and independent contacts to allow transport measurements. We demonstrated each of these characteristics separately, and then incorporated all of them into a single electron-hole bilayer device. The key to the sample design is using undoped GaAs/AlGaAs heterostructures processed in a field-effect transistor geometry. In such samples, the density of single 2D layers of electrons could be varied from an extremely low value of 2 x 10{sup 9} cm{sup -2} to high values of 3 x 10{sup 11} cm{sup -2}. The extreme low values of density that we achieved in single layer 2D electrons allowed us to make important contributions to the problem of the metal insulator transition in two dimensions, while at the same time provided a critical base for understanding low density 2D systems to be used in the electron-hole bilayer experiments. In this report, we describe the processing advances to fabricate single and double layer undoped samples, the low density results on single layers, and evidence for gateable undoped bilayers.

This SAND report is the final report on Sandia's Grand Challenge LDRD Project 27328, 'A Revolution in Lighting -- Building the Science and Technology Base for Ultra-Efficient Solid-state Lighting.' This project, which for brevity we refer to as the SSL GCLDRD, is considered one of Sandia's most successful GCLDRDs. As a result, this report reviews not only technical highlights, but also the genesis of the idea for Solid-state Lighting (SSL), the initiation of the SSL GCLDRD, and the goals, scope, success metrics, and evolution of the SSL GCLDRD over the course of its life. One way in which the SSL GCLDRD was different from other GCLDRDs was that it coincided with a larger effort by the SSL community - primarily industrial companies investing in SSL, but also universities, trade organizations, and other Department of Energy (DOE) national laboratories - to support a national initiative in SSL R&D. Sandia was a major player in publicizing the tremendous energy savings potential of SSL, and in helping to develop, unify and support community consensus for such an initiative. Hence, our activities in this area, discussed in Chapter 6, were substantial: white papers; SSL technology workshops and roadmaps; support for the Optoelectronics Industry Development Association (OIDA), DOE and Senator Bingaman's office; extensive public relations and media activities; and a worldwide SSL community website. Many science and technology advances and breakthroughs were also enabled under this GCLDRD, resulting in: 55 publications; 124 presentations; 10 book chapters and reports; 5 U.S. patent applications including 1 already issued; and 14 patent disclosures not yet applied for. Twenty-six invited talks were given, at prestigious venues such as the American Physical Society Meeting, the Materials Research Society Meeting, the AVS International Symposium, and the Electrochemical Society Meeting. This report contains a summary of these science and technology advances and breakthroughs, with Chapters 1-5 devoted to the five technical task areas: 1 Fundamental Materials Physics; 2 111-Nitride Growth Chemistry and Substrate Physics; 3 111-Nitride MOCVD Reactor Design and In-Situ Monitoring; 4 Advanced Light-Emitting Devices; and 5 Phosphors and Encapsulants. Chapter 7 (Appendix A) contains a listing of publications, presentations, and patents. Finally, the SSL GCLDRD resulted in numerous actual and pending follow-on programs for Sandia, including multiple grants from DOE and the Defense Advanced Research Projects Agency (DARPA), and Cooperative Research and Development Agreements (CRADAs) with SSL companies. Many of these follow-on programs arose out of contacts developed through our External Advisory Committee (EAC). In h s and other ways, the EAC played a very important role. Chapter 8 (Appendix B) contains the full (unedited) text of the EAC reviews that were held periodically during the course of the project.

We demonstrate the presence of a resonant interaction between a pair of coupled quantum wires, which are realized in the ultra-high mobility two-dimensional electron gas of a GaAs/AlGaAs quantum well. Measuring the conductance of one wire, as the width of the other is varied, we observe a resonant peak in its conductance that is correlated with the point at which the swept wire pinches off. We discuss this behavior in terms of recent theoretical predictions concerning local spin-moment formation in quantum wires.

Solid-state lighting using light-emitting diodes (LEDs) has the potential to reduce energy consumption for lighting by 50% while revolutionizing the way we illuminate our homes, work places, and public spaces. Nevertheless, substantial technical challenges remain in order for solid-state lighting to significantly displace the well-developed conventional lighting technologies. We review the potential of LED solid-state lighting to meet the long-term cost goals.

We demonstrate the presence of a resonant interaction between a pair of coupled quantum wires, which are formed in the ultrahigh mobility two-dimensional electron gas of a GaAs/AlGaAs quantum well. The coupled-wire system is realized by an extension of the split-gate technique, in which bias voltages are applied to Schottky gates on the semiconductor surface, to vary the width of the two quantum wires, as well as the strength of the coupling between them. The key observation of interest here is one in which the gate voltages used to define one of the wires are first fixed, after which the conductance of this wire is measured as the gate voltage used to form the other wire is swept. Over the range of gate voltage where the swept wire pinches off, we observe a resonant peak in the conductance of the fixed wire that is correlated precisely to this pinchoff condition. In this paper, we present new results on the current- and temperature-dependence of this conductance resonance, which we suggest is related to the formation of a local moment in the swept wire as its conductance is reduced below 2e{sup 2}/h.

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The metallic conductivity of dilute two-dimensional holes in a GaAs HIGFET (Heterojunction Insulated-Gate Field-Effect Transistor) with extremely high mobility and large r{sub s} is found to have a linear dependence on temperature, consistent with the theory of interaction corrections in the ballistic regime. Phonon scattering contributions are negligible in the temperature range of our interest, allowing comparison between our measured data and theory without any phonon subtraction. The magnitude of the Fermi liquid interaction parameter F{sub 0}{sup {sigma}} determined from the experiment, however, decreases with increasing r{sub s} for r{sub s} {approx}> 22, a behavior unexpected from existing theoretical calculations valid for small r{sub s}.

The conductivity of extremely high mobility dilute two-dimensional holes in GaAs changes linearly with temperature in the insulating side of the metal-insulator transition. Hopping conduction, characterized by an exponentially decreasing conductivity with decreasing temperature, is not observed when the conductivity is smaller than e{sup 2}/h. We suggest that strong interactions in a regime close to the Wigner crystallization must be playing a role in the unusual transport.

Coupled double quantum well field-effect transistors with a grating gate exhibit a terahertz ({approx}600 GHz) photoconductive response that resonates with standing two dimensional plasma oscillations under the gate and may be the basis for developing a fast, tunable terahertz detector. The application of a precisely aligned in-plane magnetic field produces no detectable change in the device DC conductance but produces a dramatic inversion, growth of the terahertz photoconductive response and frequency shift of the standing plasmon resonances. The frequency shift can be described by a significant mass increase produced by the in-plane field. The mass increase is substantially larger than that calculated from a single well and we presume that a proper treatment of the coupled double quantum well may resolve this discrepancy.

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The goal of this LDRD was to engineer further improvements in a novel electron tunneling device, the double electron layer tunneling transistor (DELTT). The DELTT is a three terminal quantum device, which does not require lateral depletion or lateral confinement, but rather is entirely planar in configuration. The DELTT's operation is based on 2D-2D tunneling between two parallel 2D electron layers in a semiconductor double quantum well heterostructure. The only critical dimensions reside in the growth direction, thus taking full advantage of the single atomic layer resolution of existing semiconductor growth techniques such as molecular beam epitaxy. Despite these advances, the original DELTT design suffered from a number of performance short comings that would need to be overcome for practical applications. These included (i)a peak voltage too low ({approx}20 mV) to interface with conventional electronics and to be robust against environmental noise, (ii) a low peak current density, (iii) a relatively weak dependence of the peak voltage on applied gate voltage, and (iv) an operating temperature that, while fairly high, remained below room temperature. In this LDRD we designed and demonstrated an advanced resonant tunneling transistor that incorporates structural elements both of the DELTT and of conventional double barrier resonant tunneling diodes (RTDs). Specifically, the device is similar to the DELTT in that it is based on 2D-2D tunneling and is controlled by a surface gate, yet is also similar to the RTD in that it has a double barrier structure and a third collector region. Indeed, the device may be thought of either as an RTD with a gate-controlled, fully 2D emitter, or alternatively, as a ''3-layer DELTT,'' the name we have chosen for the device. This new resonant tunneling transistor retains the original DELTT advantages of a planar geometry and sharp 2D-2D tunneling characteristics, yet also overcomes the performance shortcomings of the original DELTT design. In particular, it exhibits the high peak voltages and current densities associated with conventional RTDs, allows sensitive control of the peak voltage by the control gate, and operates nearly at room temperature. Finally, we note under this LDRD we also investigated the use of three layer DELTT structures as long wavelength (Terahertz) detectors using photon-assisted tunneling. We have recently observed a narrowband (resonant) tunable photoresponse in related structures consisting of grating-gated double quantum wells, and report on that work here as well.

The authors report on their recent experimental studies of vertically-coupled quantum point contacts subject to in-plane magnetic fields. Using a novel flip-chip technique, mutually aligned split gates on both sides of a sub micron thick double quantum well heterostructure define a closely-coupled pair of ballistic one-dimensional (1D) constrictions. They observe quantized conductance steps due to each quantum well and demonstrate independent control of each ID constriction width. In addition, a novel magnetoconductance feature at {approximately}6 T is observed when a magnetic field is applied perpendicular to both the current and growth directions. This conductance dip is observed only when 1D subbands are populated in both the top and bottom constrictions. This data is consistent with a counting model whereby the number of subbands crossing the Fermi level changes with field due to the formation of an anticrossing in each pair of 1D subbands.

The effect of the nuclear hyperfine interaction on the dc conductivity of 2D electrons under quantum Hall effect conditions at filling factor v= 1 is observed for the first time. The local hyperfine field enhanced by dynamic nuclear polarization is monitored via the Overhauser shift of the 2D conduction electron spin resonance in AlGaAs/GaAs multiquantum-well samples. The experimentally observed change in the dc conductivity resulting from dynamic nuclear polarization is in agreement with a thermal activation model incorporating the Zeeman energy change due to the hyperfine interaction. The relaxation decay time of the dc conductivity is, within experimental error, the same as the relaxation time of the nuclear spin polarization determined from the Overhauser shift. These findings unequivocally establish the nuclear spin origins of the observed conductivity change.

A novel planar resonant tunneling transistor is demonstrated. The growth structure is similar to that of a double-barrier resonant tunneling diode (RTD), except for a fully two-dimensional (2D) emitter formed by a quantum well. Current is fed laterally into the emitter, and the 2D--2D resonant tunneling current is controlled by a surface gate. This unique device structure achieves figures-of-merit, i.e. peak current densities and peak voltages, approaching that of state-of-the-art RTDs. Most importantly, sensitive control of the peak current and voltage is achieved by gating of the emitter quantum well subband energy. This quantum tunneling transistor shows exceptional promise for ultra-high speed and multifunctional operation at room temperature.

In-plane magnetic field photoluminescence spectra from n series of n-type modulation doped GaAs/Al{sub 0.3}Ga{sub 0.7}As coupled double quantum wells show distinctive doublet structures related to the tunnel-split ground sub-level states. The magnetic field behavior of the upper transition from the antisymmetric state strongly depends on sample mobility. In a lower mobility sample, the transition energy displays an N-type kink with field (namely a maximum followed by a minimum), whereas higher mobility samples have a linear dependence. The former is attributed to a coupling mechanism due to homogeneous broadening of the electron and hole states. The results are in good agreement with recent theoretical calculations.

The authors report a new type of oscillations in magnetoresistance observed in high-mobility two-dimensional electron gas (2DEG), in GaAs-AIGaAs heterostructures. Being periodic in 1/B these oscillations appear in weak magnetic field (B < 0.3 T) and only in a narrow temperature range (3 K < T < 7 K). Remarkably, these oscillations can be understood in terms of magneto-phonon resonance originating from the interaction of 2DEG and leaky interface-acoustic phonon modes. The existence of such modes on the GaAs:AIGaAs interface is demonstrated theoretically and their velocities are calculated. It is shown that the electron-phonon scattering matrix element exhibits a peak for the phonons carrying momentum q = 2k{sub F} (k{sub F} is the Fermi wave-vector of 2DEG).

Polarized magneto-photoluminescence (MPL) measurements on a high mobility {delta}-doped GaAs/AlGaAs single quantum well from 0--60 T at temperatures between 0.37--2.1 K are reported. In addition to the neutral heavy hole magneto-exciton (X{sup 0}), the singlet (X {sub s}{sup {minus}}) and triplet (X {sub t}{sup {minus}}) states of the negatively charged magneto-exciton are observed in both polarizations. The energy dispersive and time-resolved MPL data suggest that their development is fundamentally related to the formation of the neutral magneto-exciton. At a magnetic field of 40 T the singlet and the triplet states cross as a result of the role played by the higher Landau levels and higher energy subbands in their energetic evolution, confirming theoretical predictions. The authors also observed the formation of two higher energy peaks. One of them is completely right circularly polarized and its appearance can be considered a result of the electron-hole exchange interaction enhancement with an associated electron g-factor of 3.7 times the bulk value. The other peak completely dominates the MPL spectrum at fields around 30 T. Its behavior with magnetic field and temperature indicates that it may be related to previous anomalies observed in the integer and fractional quantum Hall regimes.

We study the low-temperature in-plane magnetoconductance of vertically coupled double quantum wires. Using a novel flip-chip technique, the wires are defined by two pairs of mutually aligned split gates on opposite sides of a≤1 micron thick AlGaAs/GaAs double quantum well heterostructure. We observe quantized conductance steps due to each quantum well and demonstrate independent control of each 1D wire. A broad dip in the magnetoconductance at approximately 6 T is observed when a magnetic field is applied perpendicular to both the current and growth directions. This conductance dip is observed only when 1D subbands are populated in both the top and bottom constrictions. This data is consistent with a counting model whereby the number of subbands crossing the Fermi level changes with field due to the formation of an anticrossing in each pair of 1D subbands.

Coulomb driven, magneto-optically induced electron and hole bound states from a series of heavily doped GaAs/Al_0.3Ga_0.7As single heterojunctions (SHJ) are revealed in high magnetic fields. At low magnetic fields ({nu} >2), the photohuninescence spectra display Shubnikov de-Haas type oscillations associated with the empty second subband transition. In the regime of the Landau filling factor {nu} <1 and 1< {nu} <2, we found strong bound states due to Mott type Vocalizations. Since a SHJ has an open valence band structure, these bound states area unique property of the dynamic movement of the valence holes in strong magnetic fields.

The magnetophotoluminescence (MPL) behavior of a GaAs/Al_0.3Ga_0.7As single heterojunction has been investigated to 60T. We observed negatively charged singlet and triplet exciton states that are formed at high magnetic fields beyond the {nu}=l quantum Hall state. The variation of the charged exciton binding energies are in good agreement with theoretical predictions. The MPL transition intensities for these states showed intensity variations (maxima and minima) at the {nu}=l/3 and 1/5 fractional quantum Hall (FQH) state as a consequence of a large reduction of electron-hole screening at these filling factors.

The transport properties of a quasi-three-dimensional, 200 layer quantum well structure are investigated at integer filling in the quantum Hall state. We find that the transverse magnetoresistance R_xx, the Hall resistance R_xy, and the vertical resistance R_zz all follow a similar behavior with both temperature and in-plane magnetic field. A general feature of the influence of increasing in-plane field B_in is that the Hall conductance quantization first improves, but above a characteristic value B^C_in, the quantization is systematically removed. We consider the interplay of the chid edge state transport and the bulk (quantum Hall) transport properties. This mechanism may arise from the competition of the cyclotron energy with the superlattice band structure energies. A comparison of the resuIts with existing theories of the chiral edge state transport with in-plane field is also discussed.

We present here the results of polarized magneto-photoluminescence measurements on a high mobility single-heterojunction. The presence of a doublet structure over a large magnetic field range (2>v>l/6) is interpreted as possible evidence for the existence of a magneto-roton minima of the charged density waves. This is understood as an indication of strong electronic correlation even in the case of the IQHE limit.

We report on our work on the double electron layer tunneling transistor (DELTT), based on the gate-control of two-dimensional -- two-dimensional (2D-2D) tunneling in a double quantum well heterostructure. While previous quantum transistors have typically required tiny laterally-defined features, by contrast the DELTT is entirely planar and can be reliably fabricated in large numbers. We use a novel epoxy-bond-and-stop-etch (EBASE) flip-chip process, whereby submicron gating on opposite sides of semiconductor epitaxial layers as thin as 0.24 microns can be achieved. Because both electron layers in the DELTT are 2D, the resonant tunneling features are unusually sharp, and can be easily modulated with one or more surface gates. We demonstrate DELTTs with peak-to-valley ratios in the source-drain I-V curve of order 20:1 below 1 K. Both the height and position of the resonant current peak can be controlled by gate voltage over a wide range. DELTTs with larger subband energy offsets ({approximately} 21 meV) exhibit characteristics that are nearly as good at 77 K, in good agreement with our theoretical calculations. Using these devices, we also demonstrate bistable memories operating at 77 K. Finally, we briefly discuss the prospects for room temperature operation, increases in gain, and high-speed.

We report magneto-transport measurements including Hall, Rxy, longitudinal, Rxx, and vertical, Rzz, magnetoresistance on nearly 3-dimensional (3D) 200 layer GaAs/AlGaAs quantum well structures. Although the interlayer band-width is nearly 20% of the Fermi energy, we still observe complete quantization of the Hall resistance for the 3D quantum Hall state. The temperature dependence of the Rxx minimum shows two unusual features: initially, at higher temperatures 1 K where the quantum Hall state develops, a gap with an activation energy much smaller than the Landau gap is observed; in the low temperature limit 0.030 K a variable range hopping behavior takes over with a residual resistivity limit. Independent measurements of Gzz (in 3D ≈ 1/Rzz) where the chiral edge states dominate the vertical transport show the same temperature dependence. © 1998 Published by Elsevier Science B.V. All rights reserved.

A new method for measuring the spin of the electrically charged ground state excitations m the Q$j~j quantum Hall effect ia proposed and demonstmted for the tirst time in GaAs/AIGaAs nndtiquantum wells. The method is &sed on the nuclear spin orientation dependence of" the 2D dc conductivity y in the quantum Hall regime due to the nuclear hyperfine interaction. As a demonstration of this method the spin of the electrically charged excitations of the ground state is determined at filling factor v = 1.

Enhancement of the Zeeman energy of 2D conduction electrons near v = 1 by optical dynamic nuclear polarization (lINP), as observed by the Overhauser shift of the transport detected electron spin resonance, is measured quantitatively for the first time in GaAs/AIGaAs mukiquantum wells. The NMR signal enhancement is obtained under similar conditions in the same sample, allowing the hyperke coupling constant of 3.7T between between the nuclei and 2D conduction electrons to be measured for the first time. The potential to suppress the Zeeman energy by optical DNP is discussed in the context of its potential influence on Skyrmion formation.

We demonstrate unipolar complementary circuits consisting of a pair of resonant tunneling transistors based on the gate control of 2D-2D interlayer tunneling, where a single transistor - in addition to exhibiting a welldefined negative-differential-resistance can be operated with either positive or negative transconductance. Details of the device operation are analyzed in terms of the quantum capacitance effect and band-bending in a double quantum well structure, and show good agreement with experiment. Application of resonant tunneling complementary logic is discussed by demonstrating complementary static random access memory using two devices connected in series.

This report describes the research accomplishments achieved under the LDRD Project ``Double Electron Layer Tunneling Transistor.`` The main goal of this project was to investigate whether the recently discovered phenomenon of 2D-2D tunneling in GaAs/AlGaAs double quantum wells (DQWs), investigated in a previous LDRD, could be harnessed and implemented as the operating principle for a new type of tunneling device the authors proposed, the double electron layer tunneling transistor (DELTT). In parallel with this main thrust of the project, they also continued a modest basic research effort on DQW physics issues, with significant theoretical support. The project was a considerable success, with the main goal of demonstrating a working prototype of the DELTT having been achieved. Additional DELTT advances included demonstrating good electrical characteristics at 77 K, demonstrating both NMOS and CMOS-like bi-stable memories at 77 K using the DELTT, demonstrating digital logic gates at 77 K, and demonstrating voltage-controlled oscillators at 77 K. In order to successfully fabricate the DELTT, the authors had to develop a novel flip-chip processing scheme, the epoxy-bond-and-stop-etch (EBASE) technique. This technique was latter improved so as to be amenable to electron-beam lithography, allowing the fabrication of DELTTs with sub-micron features, which are expected to be extremely high speed. In the basic physics area they also made several advances, including a measurement of the effective mass of electrons in the hour-glass orbit of a DQW subject to in-plane magnetic fields, and both measurements and theoretical calculations of the full Landau level spectra of DQWs in both perpendicular and in-plane magnetic fields. This last result included the unambiguous demonstration of magnetic breakdown of the Fermi surface. Finally, they also investigated the concept of a far-infrared photodetector based on photon assisted tunneling in a DQW. Absorption calculations showed a narrowband absorption which persisted to temperatures much higher than the photon energy being detected. Preliminary data on prototype detectors indicated that the absorption is not only narrowband, but can be tuned in energy through the application of a gate voltage.

We report reflectivity measurements at 810 nm wavelength on GaAs/GaAlAs multiple quantum wells and NbSe2 layers at 75 K up to magnetic fields of 800 T. In the GaAs system, we observed in two separate measurements new, reproducible oscillatory phenomena in the reflectivity between 30 and 800 T, and in a third measurement on 2H-NbSe2 we observed a decrease in reflectivity of about 50% above 200 T, with some additional evidence for oscillatory behavior. We discuss these measurements based on the expected behavior in terms of their known physical properties, and consider future prospects for the application of optical methods to study condensed matter physics under these extremes. © 1998 Elsevier Science B.V. All rights reserved.

Due to inter-quantum well tunneling, coupled double quantum wells (DQWs) contain an extra degree of electronic freedom in the growth direction, giving rise to new transport phenomena not found in single electron layers. This report describes work done on coupled DQWs subject to inplane magnetic fields B{sub {parallel}}, and is based on the lead author`s doctoral thesis, successfully defended at Oregon State University on March 4, 1997. First, the conductance of closely coupled DQWs in B{sub {parallel}} is studied. B{sub {parallel}}-induced distortions in the dispersion, the density of states, and the Fermi surface are described both theoretically and experimentally, with particular attention paid to the dispersion anticrossing and resulting partial energy gap. Measurements of giant distortions in the effective mass are found to agree with theoretical calculations. Second, the Landau level spectra of coupled DQWs in tilted magnetic fields is studied. The magnetoresistance oscillations show complex beating as Landau levels from the two Fermi surface components cross the Fermi level. A third set of oscillations resulting from magnetic breakdown is observed. A semiclassical calculation of the Landau level spectra is then performed, and shown to agree exceptionally well with the data. Finally, quantum wires and quantum point contacts formed in DQW structures are investigated. Anticrossings of the one-dimensional DQW dispersion curves are predicted to have interesting transport effects in these devices. Difficulties in sample fabrication have to date prevented experimental verification. However, recently developed techniques to overcome these difficulties are described.

A double quantum well (QW) subject to in-plane magnetic fields B∥ has the dispersion curves of its two QWs shifted in k-space. When the QWs are strongly coupled, an anticrossing and partial energy gap occur, yielding a tunable multi-component Fermi surface. We report measurements of the resultant features in the conductance, the capacitive density of states and giant deviations in the cyclotron effective masses.

This report describes the research accomplishments achieved under the LDRD Project ``Electron Phase Coherent Effects in Nanostructures and Coupled 2D Systems.`` The goal of this project was to discover and characterize novel quantum transport phenomena in small semiconductor structures at low temperatures. Included is a description of the purpose of the research, the various approaches used, and a detailed qualitative description of the numerous new results obtained. The first appendix gives a detailed listing of publications, presentations, patent applications, awards received, and various other measures of the LDRD project success. Subsequent appendices consist of reprinted versions of several specific,`` scientific journal publications resulting from this LDRD project.