Gallium Nitride Distributed Feedback Nanowire Lasers
Abstract not provided.
Publications
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Jump to search filtersUsing Dilute Hydrogen Flows to Tailor Indium Incorporation during InGaN Growth
Abstract not provided.
Tunable Blue-Violet III-Nitride Nanowire Photonic Crystal Lasers
Abstract not provided.
Multi-Color Arrays of Nanowire Photonic Crystal Laser Pixels
Nature Nanotechnology
Abstract not provided.
Microsphere-Templated Gallium Nitride (GaN)
Abstract not provided.
Tunable Blue-Violet III-Nitride Nanowire Photonic Crystal Laserss
Abstract not provided.
GaN distributed feedback nanowire lasers
Abstract not provided.
Polarization Properties of GaN Nanowire Lasers
Abstract not provided.
Multi-Color III-Nitride Photonic Crystal Nanowire Laser Array on a Single Chip
Abstract not provided.
III-Nitride Solar Cells (invited)
Abstract not provided.
Gold Substrate-Induced Single-Mode Lasing of GaN Nanowires
Proposed for publication in Applied Physics Letters.
Abstract not provided.
Nanofabrication of tunable nanowire lasers via electron and ion-beam based techniques
Abstract not provided.
The Influence of Radial Heterostructuring on Carrier Dynamics in GaN Nanowires
Proposed for publication in Applied Physics Letters.
Abstract not provided.
III-nitride core-shell nanowire arrayed solar cells
Abstract not provided.
Single-mode GaN nanowire lasers
Optics Express
We demonstrate stable, single-frequency output from single, asfabricated GaN nanowire lasers operating far above lasing threshold. Each laser is a linear, double-facet GaN nanowire functioning as gain medium and optical resonator, fabricated by a top-down technique that exploits a tunable dry etch plus anisotropic wet etch for precise control of the nanowire dimensions and high material gain. A single-mode linewidth of ∼0.12 nm and >18dB side-mode suppression ratio are measured. Numerical simulations indicate that single-mode lasing arises from strong mode competition and narrow gain bandwidth. © 2012 Optical Society of America.
Single-Mode GaN Nanowire Lasers
Abstract not provided.
III-Nitride Nanowires: Novel Materials for Lighting and Photovoltaics
Abstract not provided.
Quantifying sources of charge variance in CdZnTe
Abstract not provided.
Intersubband Absorption in AlN-AlGaN Superlattices (invited)
Abstract not provided.
Single Mode GaN Nanowire Lasers
Abstract not provided.
Fabrication and Characterization of Vertically-Integrated III-Nitride Nanowire-Based LEDs and Solar Cells
Abstract not provided.
Top-down fabrication of GaN-based nanorod LEDs and lasers
Proceedings of SPIE - The International Society for Optical Engineering
Although planar heterostructures dominate current optoelectronic architectures, 1D nanowires and nanorods have distinct and advantageous properties that may enable higher efficiency, longer wavelength, and cheaper devices. We have developed a top-down approach for fabricating ordered arrays of high quality GaN-based nanorods with controllable height, pitch and diameter. This approach avoids many of the limitations of bottom-up synthesis methods. In addition to GaN nanorods, the fabrication and characterization of both axial and radial-type GaN/InGaN nanorod LEDs have been achieved. The precise control over nanorod geometry achiveable by this technique also enables single-mode single nanowire lasing with linewidths of less than 0.1 nm and low lasing thresholds of ∼250kW/cm 2. © 2012 Copyright Society of Photo-Optical Instrumentation Engineers (SPIE).
Lasing from Top-Down Gallium Nitride Nanowires
Abstract not provided.
GaN Epitaxy on Cu(110) by MOCVD
Proposed for publication in Applied Physics Letters.
Abstract not provided.
Exploring Coherent Light Sources for Ultra-Efficient Solid-State Lighting: Understanding their Potential and Limitations (invited)
Abstract not provided.
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