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Triple Junction Segregation Dominates the Stability of Nanocrystalline Alloys

Nano Letters

Barnett, Annie K.; Hussein, Omar; Alghalayini, Maher; Hinojos, Alejandro E.; Nathaniel, James E.; Medlin, Douglas L.; Hattar, Khalid; Boyce, Brad L.; Abdeljawad, Fadi

We present large-scale atomistic simulations that reveal triple junction (TJ) segregation in Pt-Au nanocrystalline alloys in agreement with experimental observations. While existing studies suggest grain boundary solute segregation as a route to thermally stabilize nanocrystalline materials with respect to grain coarsening, here we quantitatively show that it is specifically the segregation to TJs that dominates the observed stability of these alloys. Our results reveal that doping the TJs renders them immobile, thereby locking the grain boundary network and hindering its evolution. In dilute alloys, it is shown that grain boundary and TJ segregation are not as effective in mitigating grain coarsening, as the solute content is not sufficient to dope and pin all grain boundaries and TJs. Our work highlights the need to account for TJ segregation effects in order to understand and predict the evolution of nanocrystalline alloys under extreme environments.

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Interfacial defect reduction enhances universal power law response in Mo-SiNx granular metals

Journal of Applied Physics

Mcgarry, Michael P.; Gilbert, Simeon J.; Yates, Luke; Wygant, Melissa L.; Kotula, Paul G.; Bays, Nathan R.; Sharma, Peter A.; Flicker, Jack D.; Siegal, Michael P.; Biedermann, Laura B.

Granular metals (GMs), consisting of metal nanoparticles separated by an insulating matrix, frequently serve as a platform for fundamental electron transport studies. However, few technologically mature devices incorporating GMs have been realized, in large part because intrinsic defects (e.g., electron trapping sites and metal/insulator interfacial defects) frequently impede electron transport, particularly in GMs that do not contain noble metals. Here, we demonstrate that such defects can be minimized in molybdenum-silicon nitride (Mo-SiNx) GMs via optimization of the sputter deposition atmosphere. For Mo-SiNx GMs deposited in a mixed Ar/N2 environment, x-ray photoemission spectroscopy shows a 40%-60% reduction of interfacial Mo-silicide defects compared to Mo-SiNx GMs sputtered in a pure Ar environment. Electron transport measurements confirm the reduced defect density; the dc conductivity improved (decreased) by 104-105 and the activation energy for variable-range hopping increased 10×. Since GMs are disordered materials, the GM nanostructure should, theoretically, support a universal power law (UPL) response; in practice, that response is generally overwhelmed by resistive (defective) transport. Here, the defect-minimized Mo-SiNx GMs display a superlinear UPL response, which we quantify as the ratio of the conductivity at 1 MHz to that at dc, Δ σ ω . Remarkably, these GMs display a Δ σ ω up to 107, a three-orders-of-magnitude improved response than previously reported for GMs. By enabling high-performance electric transport with a non-noble metal GM, this work represents an important step toward both new fundamental UPL research and scalable, mature GM device applications.

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Comment on “Thermodynamic Models for the (HClO4 + NaClO4){aq} and (HBr + NaBr){aq} Systems at 298.15 K and 0.1 MPa” Authored by Oakes, C. S., Ward, A. L., Chugunov, N. Journal of Chemical & Engineering Data, 68, 2554–2562

Journal of Chemical and Engineering Data

Xiong, Yongliang; Wang, Yifeng

Oakes et al. (2023) published a review article in this journal. In that paper, Oakes et al. (2023) developed thermodynamic models to describe electrolyte solutions for HClO4–NaClO4–H2O and HBr–NaBr–H2O systems, based on literature data. In their paper, previously published work from researchers in the field was criticized; some of it is ours. Here, in this brief Comment, we first comment on their models, and then we briefly provide a technical response to that criticism.

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Fundamental bandwidth limits and shaping of frequency-modulated combs

Optica

Roy, Mithun; Xiao, Zhenyang; Dong, Chao; Addamane, Sadhvikas J.; Burghoff, David

Frequency-modulated (FM) combs based on active cavities like quantum cascade lasers have recently emerged as promising light sources in many spectral regions. Unlike passive modelocking, which generates amplitude modulation using the field’s amplitude, FM comb formation relies on the generation of phase modulation from the field’s phase. They can therefore be regarded as a phase-domain version of passive modelocking. However, while the ultimate scaling laws of passive modelocking have long been known—Haus showed in 1975 that pulses modelocked by a fast saturable absorber have a bandwidth proportional to effective gain bandwidth—the limits of FM combs have been much less clear. Here, we show that FM combs based on fast gain media are governed by the same fundamental limits, producing combs whose bandwidths are linear in the effective gain bandwidth. Not only do we show theoretically that the diffusive effect of gain curvature limits comb bandwidth, but we also show experimentally how this limit can be increased. By adding carefully designed resonant-loss structures that are evanescently coupled to the cavity of a terahertz laser, we reduce the curvature and increase the effective gain bandwidth of the laser, demonstrating bandwidth enhancement. Our results can better enable the creation of active chip-scale combs and be applied to a wide array of cavity geometries.

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Results 1176–1200 of 101,000
Results 1176–1200 of 101,000
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