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Sensing depths in frequency domain thermoreflectance

Journal of Applied Physics

Hodges, Wyatt L.; Jarzembski, Amun; Mcdonald, Anthony; Ziade, Elbara; Pickrell, Gregory W.

A method is developed to calculate the length into a sample to which a Frequency Domain Thermoreflectance (FDTR) measurement is sensitive. Sensing depth and sensing radius are defined as limiting cases for the spherically spreading FDTR measurement. A finite element model for FDTR measurements is developed in COMSOL multiphysics and used to calculate sensing depth and sensing radius for silicon and silicon dioxide samples for a variety of frequencies and laser spot sizes. The model is compared to experimental FDTR measurements. Design recommendations for sample thickness are made for experiments where semi-infinite sample depth is desirable. For measurements using a metal transducer layer, the recommended sample thickness is three thermal penetration depths, as calculated from the lowest measurement frequency.

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TYPE Journal Article YEAR 2022
DOIOSTIScopus

Progress in Fabrication and Characterization of Vertical GaN Power Devices (invited)

Kaplar, Robert J.; Binder, Andrew T.; Crawford, Mary H.; Allerman, Andrew A.; Gunning, Brendan P.; Flicker, Jack D.; Yates, Luke; Armstrong, Andrew A.; Dickerson, Jeramy; Glaser, Caleb E.; Steinfeldt, Jeffrey A.; Abate, Vincent M.; Smith, Michael L.; Pickrell, Gregory W.; Sharps, Paul; Anderson, T.; Gallagher, J.; Jacobs, A.G.; Koehler, A.; Tadjer, M.; Hobart, K.; Hite, J.; Ebrish, M.; Porter, M.; Zeng, K.; Chowdhury, S.; Ji, D.; Aktas, O.; Cooper, James A.

Abstract not provided.

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TYPE Conference Presentation YEAR 2022
DOIOSTI

Recent Progress in Vertical Gallium Nitride Power Devices

Kaplar, Robert J.; Allerman, Andrew A.; Crawford, Mary H.; Gunning, Brendan P.; Flicker, Jack D.; Armstrong, Andrew A.; Yates, Luke; Dickerson, Jeramy; Binder, Andrew T.; Abate, Vincent M.; Smith, Michael L.; Pickrell, Gregory W.; Sharps, Paul; Neely, Jason C.; Rashkin, Lee J.; Gill, Lee; Goodrick, Kyle; Anderson, T.; Gallagher, J.; Jacobs, A.G.; Koehler, A.; Tadjer, M.; Hobart, K.; Hite, J.; Ebrish, M.; Porter, M.; Zeng, K.; Chowdhury, S.; Ji, D.; Aktas, O.; Cooper, James A.

Abstract not provided.

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TYPE Conference Presentation YEAR 2021
DOIOSTI

Development of Vertical GaN Power Devices for Use in Electric Vehicle Drivetrains (invited)

Kaplar, Robert J.; Binder, Andrew T.; Yates, Luke; Allerman, Andrew A.; Crawford, Mary H.; Dickerson, Jeramy; Armstrong, Andrew A.; Glaser, Caleb E.; Steinfeldt, Bradley; Abate, Vincent M.; Bays, Nathan R.; Pickrell, Gregory W.; Sharps, Paul; Flicker, Jack D.; Neely, Jason C.; Rashkin, Lee J.; Gill, Lee; Goodrick, Kyle; Monson, Todd; Bock, Jonathan A.; Subramania, Ganapathi S.; Scott, Ethan; Cooper, James

Abstract not provided.

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TYPE Conference Presentation YEAR 2021
DOIOSTI

Vertical GaN PN Diodes for Grid Resiliency and Medium-Voltage Power Electronics

Kaplar, Robert J.; Allerman, Andrew A.; Crawford, Mary H.; Gunning, Brendan P.; Flicker, Jack D.; Armstrong, Andrew A.; Yates, Luke; Dickerson, Jeramy; Binder, Andrew T.; Abate, Vincent M.; Smith, Michael; Pickrell, Gregory W.; Sharps, Paul; Anderson, T.; Gallagher, J.; Jacobs, A.G.; Koehler, A.; Tadjer, M.; Hobart, K.; Hite, J.; Ebrish, M.; Porter, M.; Zeng, K.; Chowdhury, S.; Ji, D.; Aktas, O.; Cooper, James A.

Abstract not provided.

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TYPE Conference Presentation YEAR 2021
DOIOSTI

Vertical GaN Devices for Medium-Voltage Power Electronics

Kaplar, Robert J.; Allerman, Andrew A.; Crawford, Mary H.; Gunning, Brendan P.; Flicker, Jack D.; Armstrong, Andrew A.; Yates, Luke; Dickerson, Jeramy; Binder, Andrew T.; Abate, Vincent M.; Smith, Michael; Pickrell, Gregory W.; Sharps, Paul; Anderson, T.; Gallagher, J.; Jacobs, A.G.; Koehler, A.; Tadjer, M.; Hobart, K.; Hite, J.; Ebrish, M.; Porter, M.; Zeng, K.; Chowdhury, S.; Ji, D.; Aktas, O.; Cooper, James A.

Abstract not provided.

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TYPE Conference Presentation YEAR 2021
DOIOSTI

Ultra-Wide-Bandgap Semiconductors: Challenges and Opportunities (invited)

Kaplar, Robert J.; Allerman, Andrew A.; Armstrong, Andrew A.; Crawford, Mary H.; Pickrell, Gregory W.; Dickerson, Jeramy; Flicker, Jack D.; Neely, Jason C.; Paisley, Elizabeth; Baca, Albert; Klein, Brianna A.; Douglas, Erica A.; Reza, Shahed; Binder, Andrew T.; Yates, Luke; Slobodyan, Oleksiy; Sharps, Paul; Simmons, Jerry; Tsao, Jeffrey Y.; Hollis, Mark; Johnson, Noble; Jones, Ken; Pavlidis, Dimitris; Goretta, Ken; Nemanich, Bob; Goodnick, Steve; Chowdhury, Srabanti

Abstract not provided.

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TYPE Presentation YEAR 2021
OSTI

Carrier Diffusion Lengths in Continuously Grown and Etched-and-Regrown GaN Pin Diodes

IEEE Electron Device Letters

Celio, K.C.; Armstrong, Andrew A.; Talin, Albert A.; Allerman, Andrew A.; Crawford, Mary H.; Pickrell, Gregory W.; Leonard, Francois

Advanced GaN power devices are promising for many applications in high power electronics but performance limitations due to material quality in etched-and-regrown junctions prevent their widespread use. Carrier diffusion length is a critical parameter that not only determines device performance but is also a diagnostic of material quality. Here we present the use of electron-beam induced current to measure carrier diffusion lengths in continuously grown and etched-and-regrown GaN pin diodes as models for interfaces in more complex devices. Variations in the quality of the etched-and-regrown junctions are observed and shown to be due to the degradation of the n-type material. We observe an etched-and-regrown junction with properties comparable to a continuously grown junction.

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TYPE Journal Article YEAR 2021
DOIOSTIScopus

Vertical GaN Power Electronics - Opportunities and Challenges (invited)

Kaplar, Robert J.; Allerman, Andrew A.; Crawford, Mary H.; Gunning, Brendan P.; Flicker, Jack D.; Armstrong, Andrew A.; Yates, Luke; Dickerson, Jeramy; Binder, Andrew T.; Pickrell, Gregory W.; Sharps, Paul; Neely, Jason C.; Rashkin, Lee J.; Gill, L.; Anderson, T.; Gallagher, J.; Jacobs, A.; Koehler, A.; Tadjer, M.; Hobart, K.; Ebrish, M.; Porter, M.; Martinez, R.; Zeng, K.; Ji, D.; Chowdhury, S.; Aktas, O.; Cooper, James A.

Abstract not provided.

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TYPE Conference Presentation YEAR 2021
DOIOSTI

Compact Solid-State High-Voltage Switch

Pickrell, Gregory W.

Researchers at Sandia have developed a semiconductor-based high-voltage switch, with experimental results showing potential for enhanced radiation hardness, for use in multiple power conversion applications. Gallium nitride (GaN) metal-oxide semiconductor field effect transistors (MOSFETs) were modeled using commercial and Sandia CHARON simulation software to understand their performance and for future prediction of device operation in radiation environments.

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TYPE Other Report YEAR 2021
DOIOSTI
Results 26–50 of 128
Results 26–50 of 128
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