Evaluation and Optimization of Semiconductor Opening Switches
Abstract not provided.
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Jump to search filtersA Comparison of Various Solid-State Pulse Generators for Small-Scale Nonlinear Transmission Lines
Abstract not provided.
Impact of Line Length and Component Selection on RF Performance for a PCB-based Ferromagnetic Nonlinear Transmission Line
Abstract not provided.
Impact of Line Length and Component Selection on RF Performance for a PCB-based Ferromagnetic Nonlinear Transmission Line
Abstract not provided.
Transient Simulations in Silvaco Victory Device for a N-Type SiC Drift Step Recovery Diode
2024 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2024
This paper builds upon previous research in developing a SiC Drift Step Recovery Diode (DSRD) Model in Silvaco Victory Device. For this research, the DSRD is based on an N-type substrate for improved manufacturability. The model described in this paper was developed by characterizing DSRD devices under DC and transient conditions. The details of the pulsed power testbed developed for the transient characterization is outlined in this paper. The goal of this model is to allow the rapid development of future pulsed power systems and for further device structure optimization.
Investigating Operation Modes in Gallium Nitride Photoconductive Switches
Abstract not provided.
Reverse Breakdown Time of Wide Bandgap Diodes
Abstract not provided.
Reverse Breakdown Time of Wide Bandgap Diodes
2022 IEEE 9th Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2022
In order to evaluate the time evolution of avalanche breakdown in wide and ultra-wide bandgap devices, we have developed a cable pulser experimental setup that can evaluate the time-evolution of the terminating impedance for a semiconductor device with a time resolution of 130 ps. We have utilized this pulser setup to evaluate the time-to-breakdown of vertical Gallium Nitride and Silicon Carbide diodes for possible use as protection elements in the electrical grid against fast transient voltage pulses (such as those induced by an electromagnetic pulse event). We have found that the Gallium Nitride device demonstrated faster dynamics compared to the Silicon Carbide device, achieving 90% conduction within 1.37 ns compared to the SiC device response time of 2.98 ns. While the Gallium Nitride device did not demonstrate significant dependence of breakdown time with applied voltage, the Silicon Carbide device breakdown time was strongly dependent on applied voltage, ranging from a value of 2.97 ns at 1.33 kV to 0.78 ns at 2.6 kV. The fast response time (< 5 ns) of both the Gallium Nitride and Silicon Carbide devices indicate that both materials systems could meet the stringent response time requirements and may be appropriate for implementation as protection elements against electromagnetic pulse transients.
Investigating Lock On in Gallium Nitride Photoconductive Solid State Switches
Abstract not provided.
Compact Sealed Spark Gaps
Abstract not provided.
ARC-SAFE: Accelerated Response Semiconducting Contactors and Surge Attenuation for DC Electrical Systems Quarterly Review June 2021
Abstract not provided.
A Day in the Life: Being a Woman in Electrical Engineering
Abstract not provided.
ARC-SAFE: Accelerated Response Semiconducting Contactors and Surge Attenuation For DC Electrical Systems FY20 Annual Review
Abstract not provided.
NLTL Frequency Chirp through Dynamic Bias of Inductor Cores
Abstract not provided.
ARC-SAFE: Accelerated Response Semiconducting Contactors and Surge Attenuation for DC Electrical Systems
Abstract not provided.
High-Gain Persistent Nonlinear Conductivity in High-Voltage Gallium Nitride Photoconductive Switches
Abstract not provided.
Advanced GaN Device Technologies for Power Electronics
Abstract not provided.
High-Gain Persistent Nonlinear Conductivity in High-Voltage Gallium Nitride Photoconductive Switches
Abstract not provided.
High-Gain Persistent Conductivity In High-Voltage Gallium Nitride Photoconductive Switches
Abstract not provided.
MVDC / HVDC Power Conversion with Optically-Controlled GaN Switches
Abstract not provided.
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