Project 21-0041 / ?Strategic Radiation Hardening of Advanced Radio Frequency Integrated Circuits?
Abstract not provided.
Publications
Single Event Burnout in Vertical GaN Diodes
Abstract not provided.
Assessment of Commercial-Off-The-Shelf Electronics for use in a Short-Term Geostationary Satellite
Commercial-Off-The-Shelf (COTS) electronics offer cutting-edge capability at lower prices compared to their space-grade counterparts. However, their use in space missions has been limited due to concerns around survivability in a space environment; COTS devices are not designed to survive the harsh radiation environment of space. Nonetheless, for space missions with short durations it may be possible to use COTS electronics. This study evaluates the use of several families of COTS electronics for a specific short-term mission. An assembled database including selected space grade and COTS components is discussed. High confidence FPGAs, microprocessors, and optocouplers COTS are identified. Medium confidence Memory, ADCs, DACs, power electronics, and RFMMICs COTS are also included, as well as testing to improve confidence in medium confidence parts. An experimental approach for evaluating tin whisker susceptibility for tin-leaded COTS components is described. Using COTS electronics in Short-Term Geostationary Satellites is feasible; this report includes enabling tools.
Radiation Response of AlGaN-Channel HEMTs
Abstract not provided.
Radiation and Self Heating Effects in Hetero-Junction Bipolar Transistors
Abstract not provided.
Radiation Response of AlGaN HEMTs
Abstract not provided.
Outstanding Conference Paper Award: 2015 IEEE Nuclear and Space Radiation Effects Conference
IEEE Transactions on Nuclear Science
This conference presents the recipients of the Outstanding Conference Paper Award from the 2015 IEEE Nuclear and Space Radiation Effects Conference.
The Contribution of Low-Energy Protons to the Total On-Orbit SEU Rate
IEEE Transactions on Nuclear Science
Low-and high-energy proton experimental data and error rate predictions are presented for many bulk Si and SOI circuits from the 20-90 nm technology nodes to quantify how much low-energy protons (LEPs) can contribute to the total on-orbit single-event upset (SEU) rate. Every effort was made to predict LEP error rates that are conservatively high; even secondary protons generated in the spacecraft shielding have been included in the analysis. Across all the environments and circuits investigated, and when operating within 10% of the nominal operating voltage, LEPs were found to increase the total SEU rate to up to 4.3 times as high as it would have been in the absence of LEPs. Therefore, the best approach to account for LEP effects may be to calculate the total error rate from high-energy protons and heavy ions, and then multiply it by a safety margin of 5. If that error rate can be tolerated then our findings suggest that it is justified to waive LEP tests in certain situations. Trends were observed in the LEP angular responses of the circuits tested. Grazing angles were the worst case for the SOI circuits, whereas the worst-case angle was at or near normal incidence for the bulk circuits.
New Insights Gained on Mechanisms of Low-Energy Proton-Induced SEUs by Minimizing Energy Straggle
IEEE Transactions on Nuclear Science
We present low-energy proton single-event upset (SEU) data on a 65 nm SOI SRAM whose substrate has been completely removed. Since the protons only had to penetrate a very thin buried oxide layer, these measurements were affected by far less energy loss, energy straggle, flux attrition, and angular scattering than previous datasets. The minimization of these common sources of experimental interference allows more direct interpretation of the data and deeper insight into SEU mechanisms. The results show a strong angular dependence, demonstrate that energy straggle, flux attrition, and angular scattering affect the measured SEU cross sections, and prove that proton direct ionization is the dominant mechanism for low-energy proton-induced SEUs in these circuits.
New insights gained on mechanisms of low-energy proton-induced SEUs by minimizing energy straggle
IEEE Transactions on Nuclear Science
In this study, we present low-energy proton single-event upset (SEU) data on a 65 nm SOI SRAM whose substrate has been completely removed. Since the protons only had to penetrate a very thin buried oxide layer, these measurements were affected by far less energy loss, energy straggle, flux attrition, and angular scattering than previous datasets. The minimization of these common sources of experimental interference allows more direct interpretation of the data and deeper insight into SEU mechanisms. The results show a strong angular dependence, demonstrate that energy straggle, flux attrition, and angular scattering affect the measured SEU cross sections, and prove that proton direct ionization is the dominant mechanism for low-energy proton-induced SEUs in these circuits.
The contribution of low-energy protons to the total on-orbit SEU rate
IEEE Transactions on Nuclear Science
Low- and high-energy proton experimental data and error rate predictions are presented for many bulk Si and SOI circuits from the 20-90 nm technology nodes to quantify how much low-energy protons (LEPs) can contribute to the total on-orbit single-event upset (SEU) rate. Every effort was made to predict LEP error rates that are conservatively high; even secondary protons generated in the spacecraft shielding have been included in the analysis. Across all the environments and circuits investigated, and when operating within 10% of the nominal operating voltage, LEPs were found to increase the total SEU rate to up to 4.3 times as high as it would have been in the absence of LEPs. Therefore, the best approach to account for LEP effects may be to calculate the total error rate from high-energy protons and heavy ions, and then multiply it by a safety margin of 5. If that error rate can be tolerated then our findings suggest that it is justified to waive LEP tests in certain situations. Trends were observed in the LEP angular responses of the circuits tested. As a result, grazing angles were the worst case for the SOI circuits, whereas the worst-case angle was at or near normal incidence for the bulk circuits.
The contribution of low-energy protons to the total on-orbit SEU rate
Abstract not provided.
New insights gained on mechanisms of low-energy proton-induced SEUs by minimizing energy straggle
Abstract not provided.
Single Event Effects Testing Results in Sandia National Laboratories Via Programmable ASIC Platforms
Abstract not provided.
Outstanding conference paper award 2014 IEEE nuclear and space radiation effects conference
IEEE Transactions on Nuclear Science
The recipients of the 2014 NSREC Outstanding Conference Paper Award are Nathaniel A. Dodds, James R. Schwank, Marty R. Shaneyfelt, Paul E. Dodd, Barney L. Doyle, Michael Trinczek, Ewart W. Blackmore, Kenneth P. Rodbell, Michael S. Gordon, Robert A. Reed, Jonathan A. Pellish, Kenneth A. LaBel, Paul W. Marshall, Scot E. Swanson, Gyorgy Vizkelethy, Stuart Van Deusen, Frederick W. Sexton, and M. John Martinez, for their paper entitled "Hardness Assurance for Proton Direct Ionization-Induced SEEs Using a High-Energy Proton Beam." For older CMOS technologies, protons could only cause single-event effects (SEEs) through nuclear interactions. Numerous recent studies on 90 nm and newer CMOS technologies have shown that protons can also cause SEEs through direct ionization. Furthermore, this paper develops and demonstrates an accurate and practical method for predicting the error rate caused by proton direct ionization (PDI).
Hardness assurance for proton direct ionization-induced SEEs using a high-energy proton beam
IEEE Transactions on Nuclear Science
The low-energy proton energy spectra of all shielded space environments have the same shape. This shape is easily reproduced in the laboratory by degrading a high-energy proton beam, producing a high-fidelity test environment. We use this test environment to dramatically simplify rate prediction for proton direct ionization effects, allowing the work to be done at high-energy proton facilities, on encapsulated parts, without knowledge of the IC design, and with little or no computer simulations required. Proton direct ionization (PDI) is predicted to significantly contribute to the total error rate under the conditions investigated. Scaling effects are discussed using data from 65-nm, 45-nm, and 32-nm SOI SRAMs. These data also show that grazing-angle protons will dominate the PDI-induced error rate due to their higher effective LET, so PDI hardness assurance methods must account for angular effects to be conservative. We show that this angular dependence can be exploited to quickly assess whether an IC is susceptible to PDI.
Novel detection methods for radiation-induced electron-hole pairs
Most common ionizing radiation detectors typically rely on one of two general methods: collection of charge generated by the radiation, or collection of light produced by recombination of excited species. Substantial efforts have been made to improve the performance of materials used in these types of detectors, e.g. to raise the operating temperature, to improve the energy resolution, timing or tracking ability. However, regardless of the material used, all these detectors are limited in performance by statistical variation in the collection efficiency, for charge or photons. We examine three alternative schemes for detecting ionizing radiation that do not rely on traditional direct collection of the carriers or photons produced by the radiation. The first method detects refractive index changes in a resonator structure. The second looks at alternative means to sense the chemical changes caused by radiation on a scintillator-type material. The final method examines the possibilities of sensing the perturbation caused by radiation on the transmission of a RF transmission line structure. Aspects of the feasibility of each approach are examined and recommendations made for further work.
Pre-photolithographic GaAs surface treatment for improved photoresist adhesion during wet chemical etching and improved wet etch profiles
Results of several experiments aimed at remedying photoresist adhesion failure during spray wet chemical etching of InGaP/GaAs NPN HBTs are reported. Several factors were identified that could influence adhesion and a Design of Experiment (DOE) approach was used to study the effects and interactions of selected factors. The most significant adhesion improvement identified is the incorporation of a native oxide etch immediately prior to the photoresist coat. In addition to improving adhesion, this pre-coat treatment also alters the wet etch profile of (100) GaAs so that the reaction limited etch is more isotropic compared to wafers without surface treatment; the profiles have a positive taper in both the [011] and [011] directions, but the taper angles are not identical. The altered profiles have allowed us to predictably yield fully probe-able HBTs with 5 x 5 {micro}m emitters using 5200 {angstrom} evaporated metal without planarization.
Pre-Photolithographic GaAs Surface Treatment for Improved Photoresist Adhesion During Wet Chemical Etching and Improved Wet Etch Profiles
Abstract not provided.
Demonstration of Thermal Emissions Control
Abstract not provided.
SiC Via Fabrication for Wide Bandgap HEMT/MMIC Devices
Journal of Vacuum and Science and Technology
Abstract not provided.
SiC Via Formation for Wide Bandgap HEMT/MMIC Devices
Abstract not provided.
22 Results