Publications

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We report on AlGaN HEMT-based logic development, using combined enhancement- and depletion-mode transistors to fabricate inverters with operation from room temperature up to 500°C. Our development approach included: (a) characterizing temperature dependent carrier transport for different AlGaN HEMT heterostructures, (b) developing a suitable gate metal scheme for use in high temperatures, and (c) over-temperature testing of discrete devices and inverters. Hall mobility data revealed the GaN-channel HEMT experienced a 6.9× reduction in mobility, whereas the AlGaN channel HEMTs experienced about a 3.1x reduction. Furthermore, a greater aluminum contrast between the barrier and channel enabled higher carrier densities in the two-dimensional electron gas for all temperatures. The combination of reduced variation in mobility with temperature and high sheet carrier concentration showed that an Al-rich AlGaN-channel HEMT with a high barrier-to-channel aluminum contrast is the best option for an extreme temperature HEMT design. Three gate metal stacks were selected for low resistivity, high melting point, low thermal expansion coefficient, and high expected barrier height. The impact of thermal cycling was examined through electrical characterization of samples measured before and after rapid thermal anneal. The 200 nm tungsten gate metallization was the top performer with minimal reduction in drain current, a slightly positive threshold voltage shift, and about an order of magnitude advantage over the other gates in on-to-off current ratio. After incorporating the tungsten gate metal stack in device fabrication, characterization of transistors and inverters from room temperature up to 500°C was performed. The enhancement-mode (e-mode) devices’ resistance started increasing at about 200°C, resulting in drain current degradation. This phenomenon was not observed in depletion-mode (d-mode) devices but highlights a challenge for inverters in an e-mode driver and d-mode load configuration.

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Vertical gallium nitride (GaN) p-n diodes have garnered significant interest for use in power electronics where high-voltage blocking and high-power efficiency are of concern. In this article, we detail the growth and fabrication methods used to develop a large area (1 mm2) vertical GaN p-n diode capable of a 6.0-kV breakdown. We also demonstrate a large area diode with a forward pulsed current of 3.5 A, an 8.3-mΩ·cm2 differential specific ON-resistance, and a 5.3-kV reverse breakdown. In addition, we report on a smaller area diode (0.063 mm2) that is capable of 6.4-kV breakdown with a differential specific ON-resistance of 10.2 m·Ω·cm2, when accounting for current spreading through the drift region at a 45° angle. Finally, the demonstration of avalanche breakdown is shown for a 0.063-mm2 diode with a room temperature breakdown of 5.6 kV. These results were achieved via epitaxial growth of a 50-μm drift region with a very low carrier concentration of < 1×1015 cm-3 and a carefully designed four-zone junction termination extension.

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In this project we endeavored to improve the state-of-the-art in UV lasers diodes. We made important advancements in several fronts from modeling, to epitaxial growth, to fabrication, and testing. Throughout the project it became clear that polarization doping would be able to help advance the state of laser diode design in terms of electrical performance, but the optical design would need to be investigated to ensure that a 2D guided mode would be supported. New capability in optical modeling using commercial software demonstrated that the new polarization doped structures would be viable. New capability in pulsed testing was established to reach the current and voltage required. Our fabricated devices had some parasitic electrical paths which hindered performance that we were ultimately unable to overcome in the project timeframe. We do believe that future projects will be able to leverage the advancements made under this project.

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In this work, ultrawide bandgap Al_0.7Ga_0.3N MESFETs with refractory Tungsten Schottky and Ohmic contacts are studied in 300–675 K environments. Variable-temperature dc electrical transport reveals large ON-state drain current densities for an AlGaN device: 209 mA/mm at 300 K and 156 mA/mm at 675 K in the ON-state (25% reduction). Drain and gate currents are only weakly temperature-dependent, suggesting potential for engineering temperature invariant operation. The ON-/ OFF-ratio is limited by OFF-state leakage through the gate, which is attributed to damage from sputter deposition. Future work using refractory metals with larger work functions that are deposited by electron beam deposition is proposed.

Understanding the impact of high-energy electron radiation on device characteristics remains critical for the expanding use of semiconductor electronics in space-borne applications and other radiation harsh environments. Here, we report on in situ measurements of high-energy electron radiation effects on the hole diffusion length in low threading dislocation density homoepitaxial bulk n-GaN Schottky diodes using electron beam induced current (EBIC) in high-voltage scanning electron microscopy mode. Despite the large interaction volume in this system, quantitative EBIC imaging is possible due to the sustained collimation of the incident electron beam. This approach enables direct measurement of electron radiation effects without having to thin the specimen. Using a combination of experimental EBIC measurements and Monte Carlo simulations of electron trajectories, we determine a hole diffusion length of 264 ± 11 nm for n-GaN. Irradiation with 200 kV electron beam with an accumulated dose of 24 × 1016 electrons cm−2 led to an approximate 35% decrease in the minority carrier diffusion length.

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