Publications

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A system is presented that is capable of measuring subnanosecond reverse recovery times of diodes in wide-bandgap materials over a wide range of forward biases (0 - 1 A) and reverse voltages (0 - 10 kV). The system utilizes the step recovery technique and comprises a cable pulser based on a silicon (Si) Photoconductive Semiconductor Switch (PCSS) triggered with an Ultrashort Pulse Laser, a pulse charging circuit, a diode biasing circuit, and resistive and capacitive voltage monitors. The PCSS-based cable pulser transmits a 130 ps rise time pulse down a transmission line to a capacitively coupled diode, which acts as the terminating element of the transmission line. The temporal nature of the pulse reflected by the diode provides the reverse recovery characteristics of the diode, measured with a high bandwidth capacitive probe integrated into the cable pulser. This system was used to measure the reverse recovery times (including the creation and charging of the depletion region) for two Avogy gallium nitride diodes; the initial reverse recovery time was found to be 4 ns and varied minimally over reverse biases of 50-100 V and forward current of 1-100 mA.

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This report describes the development of ultra-short pulse laser (USPL) induced terahertz (THz) radiation to image electronic plasmas during electrical breakdown. The technique uses three pulses from two USPLs to (1) trigger the breakdown, (2) create a 2 picosecond (ps, 10 -12 s), THz pulse to illuminate the breakdown, and (3) record the THz image of the breakdown. During this three year internal research program, sub-picosecond jitter timing for the lasers, THz generation, high bandwidth (BW) diagnostics, and THz image acquisition was demonstrated. High intensity THz radiation was optically-induced in a pulse-charged gallium arsenide photoconductive switch. The radiation was collected, transported, concentrated, and co-propagated through an electro-optic crystal with an 800 nm USPL pulse whose polarization was rotated due to the spatially varying electric field of the THz image. The polarization modulated USPL pulse was then passed through a polarizer and the resulting spatially varying intensity was detected in a high resolution digital camera. Single shot images had a signal to noise of %7E3:1. Signal to noise was improved to %7E30:1 with several experimental techniques and by averaging the THz images from %7E4000 laser pulses internally and externally with the camera and the acquisition system (40 pulses per readout). THz shadows of metallic films and objects were also recorded with this system to demonstrate free-carrier absorption of the THz radiation and improve image contrast and resolution. These 2 ps THz pulses were created and resolved with 100 femtosecond (fs, 10 -15 s) long USPL pulses. Thus this technology has the capability to time-resolve extremely fast repetitive or single shot phenomena, such as those that occur during the initiation of electrical breakdown. The goal of imaging electrical breakdown was not reached during this three year project. However, plans to achieve this goal as part of a follow-on project are described in this document. Further modifications to improve the THz image contrast and resolution are proposed, and after they are made, images of photo-induced carriers in gallium arsenide and silicon will be acquired to evaluate image sensitivity versus carrier density. Finally electrical breakdown will be induced with the first USPL pulse, illuminated with THz radiation produced with the second USPL pulse and recorded with the third USPL pulse.

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This report describes measurements of the time delay between the onset of corona and complete electrical breakdown between a point and a plane in dry air near atmospheric pressure as a function of the distance between the point and the plane. The large variation in these time delays is representative of the stochastic nature of electrical breakdown and the many possible phenomena that occur between the initiation and completion of electrical breakdown, including initiation without complete electrical breakdown. The purpose of this work is to provide data which will be accurately modeled when a model contains the appropriate mechanisms with the proper priorities to describe this fundamental electrical breakdown configuration. The acquisition of these measurements completes a level three milestone for the WSEAT program which sponsors this research. Also included in this report is a description of our plans to “automate” the experimental procedure, protect the high sensitivity fast-gated camera, and add diagnostics and new experimental techniques to the test facility. This will provide measurements of the time delay distributions with improved statistics and additional experimental information about the processes that occur during electrical breakdown.

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In a submerged environment, power cables may experience accelerated insulation degradation due to water-related aging mechanisms. Direct contact with water or moisture intrusion in the cable insulation system has been identified in the literature as a significant aging stressor that can affect performance and lifetime of electric cables. Progressive reduction of the dielectric strength is commonly a result of water treeing which involves the development of permanent hydrophilic structures in the insulation coinciding with the absorption of water into the cable. Water treeing is a phenomenon in which dendritic microvoids are formed in electric cable insulation due to electrochemical reactions, electromechanical forces, and diffusion of contaminants over time. These reactions are caused by the combined effects of water presence and high electrical stresses in the material. Water tree growth follows a tree-like branching pattern, increasing in volume and length over time. Although these cables can be “dried out,” water tree degradation, specifically the growth of hydrophilic regions, is believed to be permanent and typically worsens over time. Based on established research, water treeing or water induced damage can occur in a variety of electric cables including XLPE, TR-XLPE and other insulating materials, such as EPR and butyl rubber. Once water trees or water induced damage form, the dielectric strength of an insulation material will decrease gradually with time as the water trees grow in length, which could eventually result in failure of the insulating material. Under wet conditions or in submerged environments, several environmental and operational parameters can influence water tree initiation and affect water tree growth. These parameters include voltage cycling, field frequency, temperature, ion concentration and chemistry, type of insulation material, and the characteristics of its defects. In this effort, a review of academic and industrial literature was performed to identify: 1) findings regarding the degradation mechanisms of submerged cabling and 2) condition monitoring methods that may prove useful in predicting the remaining lifetime of submerged medium voltage power cables. The research was conducted by a multi-disciplinary team, and sources included official NRC reports, national laboratory reports, IEEE standards, conference and journal proceedings, magazine articles, PhD dissertations, and discussions with experts. The purpose of this work was to establish the current state-of-the-art in material degradation modeling and cable condition monitoring techniques and to identify research gaps. Subsequently, future areas of focus are recommended to address these research gaps and thus strengthen the efficacy of the NRC’s developing cable condition monitoring program. Results of this literature review and details of the testing recommendations are presented in this report.

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Electrical breakdown in a composite gas-solid dielectric is described in qualitative terms. Continuum- and particle-based calculations are performed on idealized structures. The analysis and the calculations suggest that dielectric permittivity has an important role at early times in the breakdown events. The continuum calculations show that the space-charge limited current in the solid dielectric has an important role at longer times. At very long times, the Joule heating from the space-charge limited current is expected to produce thermal breakdown. © 2013 IEEE.

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Prior to this research, we have developed high-gain GaAs photoconductive semiconductor switches (PCSSs) to trigger 50-300 kV high-voltage switches (HVSs). We have demonstrated that PCSSs can trigger a variety of pulsed-power switches operating at 50300 kV by locating the trigger generator (TG) directly at the HVS. This was demonstrated for two types of dc-charged trigatrons and two types of field distortion midplane switches, including a ±100 kVDC switch produced by the High Current Electronics Institute used in the linear transformer driver. The lowest rms jitter obtained from triggering an HVS with a PCSS was 100 ps from a 300 kV pulse-charged trigatron. PCSSs are the key component in these independently timed fiber-optically controlled low jitter TGs for HVSs. TGs are critical subsystems for reliable and efficient pulsed-power facilities because they control the timing synchronization and amplitude variation of multiple pulse-forming lines that combine to produce the total system output. Future facility-scale pulsed-power systems are even more dependent on triggering, as they are composed of many more triggered HVSs, and they produce shaped pulses by independent timing of the HVSs. As pulsed-power systems become more complex, the complexity of the associated trigger systems also increases. One of the means to reduce this complexity is to allow the trigger system to be charged directly from the voltage appearing across the HVS. However, for slow or dc-charged pulsed-power systems, this can be particularly challenging as the dc hold-off of the PCSS dramatically declines. This paper presents results that are seeking to address HVS performance requirements over large operating ranges by triggering using a pulsed-charged PCSS-based TG. Switch operating conditions that are as low as 45% of the self-break were achieved. A dc-charged PCSS-based TG is also introduced and demonstrated over a 39-61 kV operating range. DC-charged PCSS allows the TG to be directly charged from slow or dc-charged pulsed-power systems. GaAs and neutron-irradiated GaAs (n-GaAs) PCSSs were used to investigate the dc-charged operation. © 2010 IEEE.

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Terahertz radiation from optically-induced plasmas on metal, semiconductor, and dielectric surfaces is compared to electron-hole plasma radiation from GaAs and Ge. Electro-optic sampling and electric-field probes measure radiated field waveforms and distributions to 0.350 THz.

We have studied the feasibility of an innovative device to sample 1ns low-power single current transients with a time resolution better than 10 ps. The new concept explored here is to close photoconductive semiconductor switches (PCSS) with a Laser for a period of 10 ps. The PCSSs are in a series along a Transmission Line (TL). The transient propagates along the TL allowing one to carry out a spatially resolved sampling of charge at a fixed time instead of the usual timesampling of the current. The fabrication of such a digitizer was proven to be feasible but very difficult.

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Research is presented on infrared (IR) and near infrared (NIR) sensitive sensor technologies for use in a high speed shuttered/intensified digital video camera system for range-gated imaging at ''eye-safe'' wavelengths in the region of 1.5 microns. The study is based upon nonlinear crystals used for second harmonic generation (SHG) in optical parametric oscillators (OPOS) for conversion of NIR and IR laser light to visible range light for detection with generic S-20 photocathodes. The intensifiers are ''stripline'' geometry 18-mm diameter microchannel plate intensifiers (MCPIIS), designed by Los Alamos National Laboratory and manufactured by Philips Photonics. The MCPIIS are designed for fast optical shattering with exposures in the 100-200 ps range, and are coupled to a fast readout CCD camera. Conversion efficiency and resolution for the wavelength conversion process are reported. Experimental set-ups for the wavelength shifting and the optical configurations for producing and transporting laser reflectance images are discussed.

Laboratory experiments utilizing different near-infrared (NIR) sensitive imaging techniques for LADAR range gated imaging at eye-safe wavelengths are presented. An OPO/OPA configuration incorporating a nonlinear crystal for wavelength conversion of 1.56 micron probe or broadcast laser light to 807 nm light by utilizing a second pump laser at 532 nm for gating and gain, was evaluated for sensitivity, resolution, and general image quality. These data are presented with similar test results obtained from an image intensifier based upon a transferred electron (TE) photocathode with high quantum efficiency (QE) in the 1-2 micron range, with a P-20 phosphor output screen. Data presented include range-gated imaging performance in a cloud chamber with varying optical attenuation of laser reflectance images.

A new class of semiconductor lasers that can potentially produce much more short pulse energy is presented. This new laser is not limited in volume or aspect ratio by the depth of a p-n junction and are created from current filaments in semi-insulating GaAs. A current filament semiconductor lasers (CFSL) that have produced 75 nJ of 890 nm radiation in 1.5 ns were tested. A filaments as long as 3.4 cm and several hundred microns in diameter in high gain GaAs photoconductive switches were observed. Their smallest dimension can be more than 100 times the carrier diffusion length in GaAs. The spectral narrowing, lasing thresholds, beam divergence, temporal narrowing and energies which imply lasing for several configurations of CFSL are reported.

This report provides a summary of the LDRD project titled: An Electromagnetic Imaging System for Environmental Site Reconnaissance. The major initial challenge of this LDRD was to develop a ground penetrating radar (GPR) whose peak and average radiated power surpassed that of any other in existence. Goals were set to use such a system to detect the following: (1) disrupted soil layers where there is potential for buried waste, (2) buried objects such as 55-gallon drums at depths up to 3 m, and (3) detecting contaminated soil. Initial modeling of the problem suggested that for soil conditions similar to Puerto Rican clay loam, moisture content 10 percent (conductivity = 0.01 mhos at 350 MHz), a buried 55-gallon drum could be detected in a straightforward manner by an UWB GPR system at a depth of 3 meters. From the simulations, the highest attenuation ({minus}50 dB) was the result of scattering from a 3-m deep vertically orientated drum. A system loss of {minus}100 dB is a typical limit for all kinds of radar systems (either direct time-domain or swept frequency). The modeling work also determined that the waveshape of the pulse scattered off the buried drum would be relatively insensitive to drum orientation, and thus easier to detect with the GPR system.

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The electrical properties of semi-insulating (SI) Gallium Arsenide (GaAs) have been investigated for some time, particularly for its application as a substrate in microelectronics. Of late this material has found a variety of applications other than as an isolation region between devices, or the substrate of an active device. High resistivity SI GaAs is increasingly being used in charged particle detectors and photoconductive semiconductor switches (PCSS). PCSS made from these materials operating in both the linear and non-linear modes have applications such as firing sets, as drivers for lasers, and in high impedance, low current Q-switches or Pockels cells. In the non-linear mode, it has also been used in a system to generate Ultra-Wideband (UWB) High Power Microwaves (HPM). The choice of GaAs over silicon offers the advantage that its material properties allow for fast, repetitive switching action. Furthermore photoconductive switches have advantages over conventional switches such as improved jitter, better impedance matching, compact size, and in some cases, lower laser energy requirement for switching action. The rise time of the PCSS is an important parameter that affects the maximum energy transferred to the load and it depends, in addition to other parameters, on the bias or the average field across the switch. High field operation has been an important goal in PCSS research. Due to surface flashover or premature material breakdown at higher voltages, most PCSS, especially those used in high power operation, need to operate well below the inherent breakdown voltage of the material. The lifetime or the total number of switching operations before breakdown, is another important switch parameter that needs to be considered for operation at high bias conditions. A lifetime of {approximately} 10{sup 4} shots has been reported for PCSS's used in UWB-HPM generation [5], while it has exceeded 10{sup 8} shots for electro-optic drivers. Much effort is currently being channeled in the study related to improvements of these two parameters high bias operation and lifetime improvement for switches used in pulsed power applications. The contact material and profiles are another important area of study. Although these problems are being pursued through the incorporation of different contact materials and introducing doping near contacts, it is important that the switch properties and the conduction mechanism in these switches be well understood such that the basic nature of the problems can be properly addressed. In this paper the authors report on these two basic issues related to the device operation, i.e., mechanisms for increasing the hold-off characteristics through neutron irradiation, and the analysis of transport processes at varying field conditions in trap dominated SI GaAs in order to identify the breakdown mechanism during device operation. It is expected that this study would result in a better understanding of photoconductive switches, specifically those used in high power operation.

This paper reports on a recent comparison made between the Air Force Research Laboratory (AFRL) gallium arsenide, optically-triggered switch test configuration and the Sandia National Laboratories (SNL) gallium arsenide, optically-triggered switch test configuration. The purpose of these measurements was to compare the temporal switch jitter times. It is found that the optical trigger laser characteristics are dominant in determining the PCSS jitter.

The longevity of high gain GaAs photoconductive semiconductor switches (PCSS) has been extended to over 100 million pulses at 23A, and over 100 pulses at 1kA. This is achieved by improving the ohmic contacts by doping the semi-insulating GaAs underneath the metal, and by achieving a more uniform distribution of contact wear across the entire switch by distributing the trigger light to form multiple filaments. This paper will compare various approaches to doping the contacts, including ion implantation, thermal diffusion, and epitaxial growth. The device characterization also includes examination of the filament behavior using open-shutter, infra-red imaging during high gain switching. These techniques provide information on the filament carrier densities as well as the influence that the different contact structures and trigger light distributions have on the distribution of the current in the devices. This information is guiding the continuing refinement of contact structures and geometries for further improvements in switch longevity.

A new class of semiconductor laser is presented that does not require p-n junctions. Spectral narrowing, lasing thresholds, beam divergence, temporal narrowing, and energies are shown for these lasers based on current filaments in bulk GaAs.