Publications

Jacobson, Noah T.; Ward, Daniel R.; Gamble, John K.; Carroll, Malcolm; Rudolph, Martin R.; Baczewski, Andrew D.; Nielsen, Erik N.; Montano, Ines M.

Abstract not provided.

Applied Physics Letters

Rochette, Sophie R.; Rudolph, Martin R.; Roy, A.-M.R.; Curry, Matthew J.; Ten Eyck, G.A.; Manginell, Ronald P.; Wendt, J.R.; Pluym, Tammy P.; Carr, Stephen M.; Ward, Daniel R.; Lilly, M.P.; Carroll, Malcolm

Abstract not provided.

Mounce, Andrew M.; Lewis, Phillip J.; Monical, Cara P.; Jacobson, Noah T.; Rudolph, Martin R.; Anderson, John M.; Wendt, J.R.; Pluym, Tammy P.; Ward, Daniel R.; Larson, K.W.; Lilly, Michael L.; Carroll, Malcolm

Abstract not provided.

Rudolph, Martin R.; Mounce, Andrew M.; England, Troy D.; Jock, Ryan M.; Sharma, Peter A.; Jacobson, Noah T.; Ward, Daniel R.; Pluym, Tammy P.; Silva, Beverly L.; Anderson, John M.; Wendt, J.R.; Lilly, Michael L.; Carroll, Malcolm

Abstract not provided.

Baczewski, Andrew D.; Witzel, Wayne W.; Jacobson, Noah T.; Jock, Ryan M.; Sharma, Peter A.; Vudatha, Rohith V.; Ward, Daniel R.; Carroll, Malcolm

Abstract not provided.

Bureau-Oxton, Chloe B.; Rudinger, Kenneth M.; Jacobson, Noah T.; Ward, Daniel R.; Anderson, John M.; Manginell, Ronald P.; Wendt, J.R.; Pluym, Tammy P.; Lilly, Michael L.; Pioro-Ladriere, Michel P.; Luhman, Dwight R.; Carroll, Malcolm

Abstract not provided.

Jock, Ryan M.; Rudolph, Martin R.; Jacobson, Noah T.; Ward, Daniel R.; Harvey-Collard, Patrick H.; Bureau-Oxton, Chloe B.; Srinivasa, Vanita S.; Mounce, Andrew M.; Anderson, John M.; Manginell, Ronald P.; Wendt, J.R.; Pluym, Tammy P.; Baczewski, Andrew D.; Grace, Matthew G.; Witzel, Wayne W.; Carroll, Malcolm

Abstract not provided.

Harvey-Collard, Patrick H.; Jacobson, Noah T.; Bureau-Oxton, Chloe B.; Jock, Ryan M.; Srinivasa, Vanita S.; Mounce, Andrew M.; Ward, Daniel R.; Anderson, John M.; Manginell, Ronald P.; Wendt, J.R.; Pluym, Tammy P.; Lilly, Michael L.; Luhman, Dwight R.; Pioro-Ladriere, Michel P.; Carroll, Malcolm

Abstract not provided.

Witzel, Wayne W.; Grace, Matthew G.; Carroll, Malcolm; Ladd, Thaddeus L.

Abstract not provided.

Carroll, Malcolm

Abstract not provided.

Rudolph, Martin R.; Harvey-Collard, Patrick H.; Jock, Ryan M.; Jacobson, Noah T.; Wendt, J.R.; Pluym, Tammy P.; Dominguez, Jason J.; Ten Eyck, Gregory A.; Manginell, Ronald P.; Lilly, Michael L.; Carroll, Malcolm; Sharma, Peter A.

Abstract not provided.

Bureau-Oxton, Chloe B.; Harvy-Collard, Patrick H.; Jacobson, Noah T.; Jock, Ryan M.; Srinivasa, Vanita S.; Mounce, Andrew M.; Ward, Daniel R.; Anderson, John M.; Manginell, Ronald P.; Wendt, J.R.; Pluym, Tammy P.; Lilly, Michael L.; Luhman, Dwight R.; Pioro-Ladriere, Michel P.; Carroll, Malcolm

Abstract not provided.

Curry, Matthew J.; Carroll, Malcolm

Abstract not provided.

Physical Review Materials

Bussmann, Ezra B.; Gamble, John K.; Koepke, Justin K.; Laroche, D.; Huang, S.H.; Chuang, Y.; Li, J.Y.; Liu, C.W.; Swartzentruber, Brian S.; Lilly, M.P.; Carroll, Malcolm; Lu, Tzu-Ming L.

As a first step to porting scanning tunneling microscopy methods of atomic-precision fabrication to a strained-Si/SiGe platform, we demonstrate post-growth P atomic-layer doping of SiGe heterostructures. To preserve the substrate structure and elastic state, we use a T≤800 ° C process to prepare clean Si0.86Ge0.14 surfaces suitable for atomic-precision fabrication. P-saturated atomic-layer doping is incorporated and capped with epitaxial Si under a thermal budget compatible with atomic-precision fabrication. Hall measurements at T=0.3 K show that the doped heterostructure has R□=570±30Ω, yielding an electron density ne=2.1±0.1×1014cm-2 and mobility μe=52±3cm2V-1s-1, similar to saturated atomic-layer doping in pure Si and Ge. The magnitude of μe and the complete absence of Shubnikov-de Haas oscillations in magnetotransport measurements indicate that electrons are overwhelmingly localized in the donor layer, and not within a nearby buried Si well. This conclusion is supported by self-consistent Schrödinger-Poisson calculations that predict electron occupation primarily in the donor layer.

Applied Physics Letters

Studenikin, S.A.S.; Gaudreau, L.G.; Kataoka, K.K.; Austing, D.G.A.; Lu, Tzu-Ming L.; Luhman, Dwight R.; Bethke, Donald T.; Wanke, Michael W.; Lilly, Michael L.; Carroll, Malcolm; Sachrajda, A.S.S.

Here, we demonstrate coupled triple dot operation and charge sensing capability for the recently introduced quantum dot technology employing undoped Si/Si_0.8Ge_0.2 hetero-structures which also incorporate a single metal-gate layer to simplify fabrication. Si/SiGe hetero-structures with a Ge concentration of 20% rather than the more usual 30% typically encountered offer higher electron mobility. The devices consist of two in-plane parallel electron channels that host a double dot in one channel and a single dot in the other channel. In a device where the channels are sufficiently close a triple dot in a triangular configuration is induced leading to regions in the charge stability diagram where three charge-addition lines of different slope approach each other and anti-cross. In a device where the channels are further apart, the single dot charge-senses the double dot with relative change of ~2% in the sensor current.

Physical Review. X

Carroll, Malcolm; Harvey-Collard, Patrick H.; D'Anjou, Benjamin D.; Rudolph, Martin R.; Jacobson, Noah T.; Dominguez, Jason J.; Ten Eyck, Gregory A.; Wendt, J.R.; Pluym, Tammy P.; Lilly, Michael L.; Coish, William C.; Pioro-Ladriere, Michel P.

Abstract not provided.

Carroll, Malcolm; Harvey-Collard, Patrick H.

Abstract not provided.

Library Journal

Carroll, Malcolm; Ladd, Thaddeus L.

There are two good reasons to attempt to build quantum bits (qubits) out of silicon. The first is the obvious foundation of classical microelectronics. Although silicon quantum computers would operate in a fundamentally different way from classical computers$-$for example, at cryogenic temperatures$-$still the level of development in material quality, crystal growth, and fabrication methodologies for silicon is unrivaled by any other material in the world. Leveraging even a small fraction of the worldwide investment in silicon for qubit development could potentially put silicon-based qubits far ahead of other solid-state alternatives. The second, less obvious reason for choosing silicon is the remarkably clean magnetic environment witnessed by spins in highly purified and isotopically enriched silicon material. Fortuitously, 95.3% of the naturally occurring isotopes of Si nuclei (²⁸Si and ³⁰Si) are spin-0. These nuclei therefore have a “closed shell” of nuclear moments, providing no external magnetic field whatsoever. Add to this the possibility of intrinsic silicon with part-per-billion chemical quality and the system is remarkably close to “vacuum” with respect to magnetic noise properties.

Bureau-Oxtron, Chloe B.; Luhman, Dwight R.; Jacobson, Noah T.; Ward, Daniel R.; Anderson, John M.; Wendt, J.R.; Pluym, Tammy P.; Lilly, Michael L.; Pioro-Ladriere, Michel P.; Carroll, Malcolm

Abstract not provided.

Lu, Tzu-Ming L.; Hardy, Will H.; Bielejec, Edward S.; Perry, Daniel L.; Ward, Daniel R.; Wendt, J.R.; Anderson, John M.; Pluym, Tammy P.; Luhman, Dwight R.; Carroll, Malcolm; Lilly, Michael L.

Abstract not provided.

Carroll, Malcolm; Harvey-Collard, Patrick H.; Jacobson, Noah T.; Jock, Ryan M.; Mounce, Andrew M.; Srinivasa, Vanita S.; Ward, Daniel R.; Wendt, J.R.; Rudolph, Martin R.; Pluym, Tammy P.; Gamble, John K.; Witzel, Wayne W.

Abstract not provided.

Carroll, Malcolm; Curry, Matthew J.; Mounce, Andrew M.; England, Troy D.; Manginell, Ronald P.; Wendt, J.R.; Pluym, Tammy P.; Carr, Stephen M.

Abstract not provided.

Technical Digest - International Electron Devices Meeting, IEDM

Harvey-Collard, Patrick; Jock, Ryan M.; Jacobson, Noah T.; Baczewski, Andrew D.; Mounce, Andrew M.; Curry, Matthew J.; Ward, Daniel R.; Anderson, John M.; Manginell, Ronald P.; Wendt, J.R.; Rudolph, Martin R.; Pluym, Tammy P.; Lilly, Michael L.; Pioro-Ladrière, Michel; Carroll, Malcolm

Qubits based on transistor-like Si MOS nanodevices are promising for quantum computing. In this work, we demonstrate a double quantum dot spin qubit that is all-electrically controlled without the need for any external components, like micromagnets, that could complicate integration. Universal control of the qubit is achieved through spin-orbit-like and exchange interactions. Using single shot readout, we show both DC- and AC-control techniques. The fabrication technology used is completely compatible with CMOS.

Review of Scientific Instruments

Pacheco, Jose L.; Singh, M.; Perry, Daniel L.; Wendt, J.R.; Ten Eyck, Gregory A.; Manginell, Ronald P.; Pluym, Tammy P.; Luhman, Dwight R.; Lilly, M.P.; Carroll, Malcolm; Bielejec, E.

We demonstrate a capability of deterministic doping at the single atom level using a combination of direct write focused ion beam and solid-state ion detectors. The focused ion beam system can position a single ion to within 35 nm of a targeted location and the detection system is sensitive to single low energy heavy ions. This platform can be used to deterministically fabricate single atom devices in materials where the nanostructure and ion detectors can be integrated, including donor-based qubits in Si and color centers in diamond.

Carr, Stephen M.; Ward, Daniel R.; Gamble, John K.; Lu, Tzu-Ming L.; Pluym, Tammy P.; Grine, Albert D.; Anderson, John M.; Lilly, Michael L.; Carroll, Malcolm

Abstract not provided.