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A high-speed, high-performance, microfabricated comprehensive two-dimensional gas chromatograph

Lab on a Chip

Whiting, Joshua J.; Myers, Edward; Manginell, Ronald P.; Moorman, Matthew W.; Anderson, John M.; Fix, Cory S.; Washburn, Cody M.; Al StatonAl; Porter, Daniel; Graf, Darin; Wheeler, David R.; Howell, Stephen; Richards, John R.; Laros, James H.; Achyuthan, Komandoor A.; Roukes, Michael; Simonson, Robert J.

A small, consumable-free, low-power, ultra-high-speed comprehensive GC×GC system consisting of microfabricated columns, nanoelectromechanical system (NEMS) cantilever resonators for detection, and a valve-based stop-flow modulator is demonstrated. The separation of a highly polar 29-component mixture covering a boiling point range of 46 to 253 °C on a pair of microfabricated columns using a Staiger valve manifold in less than 7 seconds, and just over 4 seconds after the ensemble holdup time is demonstrated with a downstream FID. The analysis time of the second dimension was 160 ms, and peak widths in the second dimension range from 10-60 ms. A peak capacity of just over 300 was calculated for a separation of just over 6 s. Data from a continuous operation testing over 40 days and 20000 runs of the GC×GC columns with the NEMS resonators using a 4-component test set is presented. The GC×GC-NEMS resonator system generated second-dimension peak widths as narrow as 8 ms with no discernable peak distortion due to under-sampling from the detector.

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A silicon metal-oxide-semiconductor electron spin-orbit qubit

Nature Communications

Jock, Ryan M.; Jacobson, Noah T.; Harvey-Collard, Patrick; Mounce, Andrew M.; Srinivasa, Vanita S.; Ward, Daniel R.; Anderson, John M.; Manginell, Ronald P.; Wendt, J.R.; Rudolph, Martin R.; Pluym, Tammy P.; Laros, James H.; Baczewski, Andrew D.; Witzel, Wayne W.; Carroll, Malcolm

The silicon metal-oxide-semiconductor (MOS) material system is a technologically important implementation of spin-based quantum information processing. However, the MOS interface is imperfect leading to concerns about 1/f trap noise and variability in the electron g-factor due to spin-orbit (SO) effects. Here we advantageously use interface-SO coupling for a critical control axis in a double-quantum-dot singlet-triplet qubit. The magnetic fieldorientation dependence of the g-factors is consistent with Rashba and Dresselhaus interface-SO contributions. The resulting all-electrical, two-Axis control is also used to probe the MOS interface noise. The measured inhomogeneous dephasing time, T2m, of 1.6 ?s is consistent with 99.95% 28Si enrichment. Furthermore, when tuned to be sensitive to exchange fluctuations, a quasi-static charge noise detuning variance of 2 μeV is observed, competitive with low-noise reports in other semiconductor qubits. This work, therefore, demonstrates that the MOS interface inherently provides properties for two-Axis qubit control, while not increasing noise relative to other material choices.

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Probing low noise at the MOS interface with a spin-orbit qubit

arXiv.org

Jock, Ryan M.; Jacobson, Noah T.; Harvey-Collard, Patrick; Mounce, Andrew M.; Srinivasa, Vanita S.; Ward, Daniel R.; Anderson, John M.; Manginell, Ronald P.; Wendt, J.R.; Rudolph, Martin R.; Pluym, Tammy P.; Laros, James H.; Baczewski, Andrew D.; Witzel, Wayne W.; Carroll, Malcolm

The silicon metal-oxide-semiconductor (MOS) material system is technologically important for the implementation of electron spin-based quantum information technologies. Researchers predict the need for an integrated platform in order to implement useful computation, and decades of advancements in silicon microelectronics fabrication lends itself to this challenge. However, fundamental concerns have been raised about the MOS interface (e.g. trap noise, variations in electron g-factor and practical implementation of multi-QDs). Furthermore, two-axis control of silicon qubits has, to date, required the integration of non-ideal components (e.g. microwave strip-lines, micro-magnets, triple quantum dots, or introduction of donor atoms). In this paper, we introduce a spin-orbit (SO) driven singlet- triplet (ST) qubit in silicon, demonstrating all-electrical two-axis control that requires no additional integrated elements and exhibits charge noise properties equivalent to other more model, but less commercially mature, semiconductor systems. We demonstrate the ability to tune an intrinsic spin-orbit interface effect, which is consistent with Rashba and Dresselhaus contributions that are remarkably strong for a low spin-orbit material such as silicon. The qubit maintains the advantages of using isotopically enriched silicon for producing a quiet magnetic environment, measuring spin dephasing times of 1.6 μs using 99.95% 28Si epitaxy for the qubit, comparable to results from other isotopically enhanced silicon ST qubit systems. This work, therefore, demonstrates that the interface inherently provides properties for two-axis control, and the technologically important MOS interface does not add additional detrimental qubit noise. isotopically enhanced silicon ST qubit systems

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Characterization of chemical contaminants and their spectral properties from an atmospheric pressure ns-pulsed microdischarge in neon

Physics of Plasmas

Sillerud, Colin H.; Schwindt, Peter S.; Moorman, Matthew W.; Yee, Benjamin T.; Anderson, John M.; Pfeifer, Nathaniel B.; Dirk, Elizabeth; Manginell, Ronald P.

Portable applications of microdischarges, such as the remediation of gaseous wastes or the destruction of volatile organic compounds, will mandate operation in the presence of contaminant species. This paper examines the temporal evolution of microdischarge optical and ultraviolet emissions during pulsed operation by experimental methods. By varying the pulse length of a microdischarge initiated in a 4-hole silicon microcavity array operating in a 655 Torr ambient primarily composed of Ne, we were able to measure the emission growth rates for different contaminant species native to the discharge environment as a function of pulse length. It was found that emission from hydrogen and oxygen impurities demonstrated similar rates of change, while emissions from molecular and atomic nitrogen, measured at 337.1 and 120 nm, respectively, exhibited the lowest rate of change. We conclude that it is likely that O2 undergoes the same resonant energy transfer process between rare gas excimers that has been shown for H2. Further, efficient resonant processes were found to be favored during ignition and extinction phases of the pulse, while emission at the 337.1 nm line from N2 was favored during the intermediate stage of the plasma. In addition to the experimental results, a zero-dimensional analysis is also presented to further understand the nature of the microdischarge.

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Fundamental Scaling of Microplasmas and Tunable UV Light Generation

Manginell, Ronald P.; Sillerud, Colin H.; Hopkins, Matthew M.; Yee, Benjamin T.; Moorman, Matthew W.; Schwindt, Peter S.; Anderson, John M.; Pfeifer, Nathaniel B.

The temporal evolution of spectral lines from microplasma devices (MD) was studied, including impurity transitions. Long-wavelength emission diminishes more rapidly than deep UV with decreasing pulse width and RF operation. Thus, switching from DC to short pulsed or RF operation, UV emissions can be suppressed, allowing for real-time tuning of the ionization energy of a microplasma photo-ionization source, which is useful for chemical and atomic physics. Scaling allows MD to operate near atmospheric pressure where excimer states are efficiently created and emit down to 65 nm; laser emissions fall off below 200 nm, making MD light sources attractive for deep UV use. A first fully-kinetic three-dimensional model was developed that explicitly calculates electron-energy distribution function. This, and non-continuum effects, were studied with the model and how they are impacted by geometry and transient or DC operation. Finally, a global non-dimensional model was developed to help explain general trends MD physics.

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Genomics-enabled sensor platform for rapid detection of viruses related to disease outbreak

Brozik, Susan M.; Polsky, Ronen P.; Campbell, DeAnna M.; Manginell, Ronald P.; Moorman, Matthew W.; Edwards, Thayne L.; Anderson, John M.; Pfeifer, Kent B.; Branch, Darren W.; Wheeler, David R.

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21 Results
21 Results