Color centers (defect complexes such as SiV) in diamond have shown potential in fields ranging from metrology, cybersecurity to quantum computation. Demonstrations in these fields have pushed the envelope of state-of-the-art operations – for example, single photon sources (SPS) making use of SiV centers in diamond for quantum key distribution have demonstrated all the requirements for SPS operation including: (1) stable operation with second correlation function <<1, (2) electrically driven single photon emission and (3) compatibility with frequenc y conversion to telecommunication frequencies. To-date, however, all these demonstrations have been on lab-scale one-off devices. The key question behind how to deterministically fabricate these devices, namely activation yield has been overlooked. For context, Si based semiconductor devices are hugely successful because we have a high activation yield for implanted dopants. This is not yet true for diamond color centers. As currently understood, the color center yield is dominated by a lack of vacancies in the immediate area of the implantation. We propose to optimize the activation yield of color center using a combination of (1) focused single ion implantation with in-situ detection to count the number of implanted Si ions and (2) localized point defect (vacancy) creation using a focused Li ion beam to improve the yield. These experiments build on the unique capabilities of the SNL nanoImplanter (nI) to produce focused ion beam with spatial resolution of < 10 nm of both Si and Li ions. This work will also leverage our world-leading single ion implantation and detection capabilities.
This project was to use light ion beam induced charge (IBIC) to detect damage cascades generated by a single heavy ion, and thereby reveal details of the shape of the cascade and the physics of recombination of carriers that interact with the cluster. Further IBIC measurements using the hardware and software of this project will improve the accuracy of theoretical models used to predict electrical degradation in devices exposed to radiation environments. In addition, future use of light ion IBIC detection of single ion-induced damage could be used to locate single ion implantation sites in quantum computing applications. This project used Sandia's Pelletron and nanoImplanter (nI) to produce heavy ion-induced collision cascades in p-n diodes, simulating cascades made by primary knock-on atoms recoiled by neutrons. Si and Li beams from the nI were used to perform highly focused scans generating IBIC signal maps where regions of lower charge collection efficiency were observed without incurring further damage. The very first use of ion channeled beams for IBIC was explored to maximize ionization, improve contrast and provide very straight line trajectories to improve lateral resolution.
We demonstrate low energy single ion detection using a co-planar detector fabricated on a diamond substrate and characterized by ion beam induced charge collection. Histograms are taken with low fluence ion pulses illustrating quantized ion detection down to a single ion with a signal-to-noise ratio of approximately 10. We anticipate that this detection technique can serve as a basis to optimize the yield of single color centers in diamond. In conclusion, the ability to count ions into a diamond substrate is expected to reduce the uncertainty in the yield of color center formation by removing Poisson statistics from the implantation process.
Displacement damage reduces ion beam induced charge (IBIC) through Shockley-Read-Hall recombination. Closely spaced pulses of 200 keVions focused in a 40 nm beam spot are used to create damage cascades within areas. Damaged areas are detected through contrast in IBIC signals generated with focused ion beams of {200 ions and 60 keV ions. IBIC signal reduction can be resolved over sub-micron regions of a silicon detector damaged by as few as 1000 heavy ions.